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Journal Articles

Augmentation of the electron counting rule with Ising model

Karol Kawka, Paweł Kempisty, Konrad Sakowski, Stanisław Krukowski, Michał Boćkowski, David Bowler, Akira Kusaba

J. Appl. Phys. 135, 225302 (2024)

https://doi.org/10.1063/5.0203033

Published: June 2024

View article titled, Augmentation of the electron counting rule with Ising model

Journal Articles

Ultrathin copper films grown on SrTiO₃ substrates for epitaxy of single-crystalline γ-FeMn

Xiaolin Li, Xu Liu, Hang Li, Ying-Qi Lü, Cunxu Gao

J. Appl. Phys. 134, 063902 (2023)

https://doi.org/10.1063/5.0153005

Published: August 2023

View article titled, Ultrathin copper films grown on SrTiO3 substrates for epitaxy of single-crystalline γ-FeMn

Journal Articles

Abrupt Te doping of GaInP grown by molecular beam epitaxy for solar cell applications

Brian Li, Yukun Sun, Ryan D. Hool, Minjoo Larry Lee

J. Appl. Phys. 134, 065702 (2023)

https://doi.org/10.1063/5.0156869

Published: August 2023

View article titled, Abrupt Te doping of GaInP grown by molecular beam epitaxy for solar cell applications

Journal Articles

Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

Malik Hassanaly, Hariswaran Sitaraman, Kevin L. Schulte, Aaron J. Ptak, John Simon, Kevin Udwary, Jacob H. Leach, Heather Splawn

J. Appl. Phys. 130, 115702 (2021)

https://doi.org/10.1063/5.0061222

Published: September 2021

View article titled, Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

Journal Articles

Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

O. Ambacher, B. Christian, M. Yassine, M. Baeumler, S. Leone, R. Quay

J. Appl. Phys. 129, 204501 (2021)

https://doi.org/10.1063/5.0049185

Published: May 2021

View article titled, Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

Journal Articles

Requirements of epitaxially grown InGaAs channel layers for tunnel field-effect transistors

Masafumi Yokoyama, Taketsugu Yamamoto, Dae-Hwan Ahn, Mitsuru Takenaka, Shinichi Takagi

J. Appl. Phys. 127, 225702 (2020)

https://doi.org/10.1063/5.0008995

Published: June 2020

View article titled, Requirements of epitaxially grown InGaAs channel layers for tunnel field-effect transistors

Journal Articles

Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses

K. A. Omari, L. X. Barton, O. Amin, R. P. Campion, A. W. Rushforth, A. J. Kent, P. Wadley, K. W. Edmonds

J. Appl. Phys. 127, 193906 (2020)

https://doi.org/10.1063/5.0006183

Published: May 2020

View article titled, Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses

Includes: Supplementary data

Journal Articles

Doping dependence of the optical dielectric function in n-type germanium

Chi Xu, John Kouvetakis, José Menéndez

J. Appl. Phys. 125, 085704 (2019)

https://doi.org/10.1063/1.5084277

Published: February 2019

View article titled, Doping dependence of the optical dielectric function in n-type germanium

Journal Articles

Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices

Jonathan Lee, Chris J. Fredricksen, Elena Flitsiyan, Robert E. Peale, Leonid Chernyak, Zahra Taghipour, Lilian Casias, Alireza Kazemi, Sanjay Krishna, Stephen Myers

J. Appl. Phys. 123, 235104 (2018)

https://doi.org/10.1063/1.5030444

Published: June 2018

View article titled, Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices

Journal Articles

The effect of Ga pre-deposition on Si (111) surface for InAs nanowire selective area hetero-epitaxy

Ziyang Liu, Clement Merckling, Rita Rooyackers, Alexis Franquet, Olivier Richard, Hugo Bender, María Vila, Juan Rubio-Zuazo, Germán R. Castro, Nadine Collaert, Aaron Thean, Wilfried Vandervorst, Marc Heyns

J. Appl. Phys. 123, 145301 (2018)

https://doi.org/10.1063/1.4998001

Published: April 2018

View article titled, The effect of Ga pre-deposition on Si (111) surface for InAs nanowire selective area hetero-epitaxy

Includes: Supplementary data

Journal Articles

Approximate analytical description of the elastic strain field due to an inclusion in a continuous medium with cubic anisotropy

A. V. Nenashev, A. A. Koshkarev, A. V. Dvurechenskii

J. Appl. Phys. 123, 105104 (2018)

https://doi.org/10.1063/1.5019335

Published: March 2018

View article titled, Approximate analytical description of the elastic strain field due to an inclusion in a continuous medium with cubic anisotropy

Includes: Supplementary data

Journal Articles

Suppression of Na interstitials in Na-F codoped ZnO

Wenxing Huo, Zengxia Mei, Aihua Tang, Huili Liang, Xiaolong Du

J. Appl. Phys. 123, 161403 (2018)

https://doi.org/10.1063/1.5003475

Published: February 2018

View article titled, Suppression of Na interstitials in Na-F codoped ZnO

Includes: Supplementary data

Journal Articles

Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes

Yuan Bu, Hiroyuki Yoshimoto, Naoki Watanabe, Akio Shima

J. Appl. Phys. 122, 244504 (2017)

https://doi.org/10.1063/1.5001370

Published: December 2017

View article titled, Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes

Journal Articles

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Daehwan Jung, Patrick G. Callahan, Bongki Shin, Kunal Mukherjee, Arthur C. Gossard, John E. Bowers

J. Appl. Phys. 122, 225703 (2017)

https://doi.org/10.1063/1.5001360

Published: December 2017

View article titled, Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Journal Articles

Ultra-low specific contact resistivity (1.4 × 10⁻⁹ Ω·cm²) for metal contacts on in-situ Ga-doped Ge_0.95Sn_0.05 film

Ying Wu, Sheng Luo, Wei Wang, Saeid Masudy-Panah, Dian Lei, Gengchiau Liang, Xiao Gong, Yee-Chia Yeo

J. Appl. Phys. 122, 224503 (2017)

https://doi.org/10.1063/1.5003272

Published: December 2017

View article titled, Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film

Journal Articles

Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes

P. Vigneshwara Raja, N. V. L. Narasimha Murty

J. Appl. Phys. 123, 161536 (2018)

https://doi.org/10.1063/1.5003068

Published: December 2017

View article titled, Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes

Journal Articles

Influence of temperature and wavelength on the switchable photovoltaic response of a BiFe_0.95Mn_0.05O₃ thin film

S. Yousfi, H. Bouyanfif, M. El Marssi

J. Appl. Phys. 122, 214101 (2017)

https://doi.org/10.1063/1.5002643

Published: December 2017

View article titled, Influence of temperature and wavelength on the switchable photovoltaic response of a BiFe0.95Mn0.05O3 thin film

Journal Articles

Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy

Motoki Satoh, Keisuke Arimoto, Junji Yamanaka, Kentarou Sawano, Yasuhiro Shiraki, Kiyokazu Nakagawa

J. Appl. Phys. 123, 161529 (2018)

https://doi.org/10.1063/1.5004077

Published: November 2017

View article titled, Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy

Journal Articles

Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

Corentin Monmeyran, Iain F. Crowe, Russell M. Gwilliam, Christopher Heidelberger, Enrico Napolitani, David Pastor, Hemi H. Gandhi, Eric Mazur, Jürgen Michel, Anuradha M. Agarwal, Lionel C. Kimerling

J. Appl. Phys. 123, 161524 (2018)

https://doi.org/10.1063/1.4999210

Published: November 2017

View article titled, Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

Journal Articles

Investigation of the effects of misfit strain on barium strontium titanate thin films deposited on base metal substrates by a modified phenomenological model

Hanting Dong, Hongfang Li, Jianguo Chen, Dengren Jin, Jinrong Cheng

J. Appl. Phys. 122, 144104 (2017)

https://doi.org/10.1063/1.5002636

Published: October 2017

View article titled, Investigation of the effects of misfit strain on barium strontium titanate thin films deposited on base metal substrates by a modified phenomenological model

NARROW

Topics

Augmentation of the electron counting rule with Ising model

Ultrathin copper films grown on SrTiO₃ substrates for epitaxy of single-crystalline γ-FeMn

Abrupt Te doping of GaInP grown by molecular beam epitaxy for solar cell applications

Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

Requirements of epitaxially grown InGaAs channel layers for tunnel field-effect transistors

Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses

Doping dependence of the optical dielectric function in n-type germanium

Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices

The effect of Ga pre-deposition on Si (111) surface for InAs nanowire selective area hetero-epitaxy

Approximate analytical description of the elastic strain field due to an inclusion in a continuous medium with cubic anisotropy

Suppression of Na interstitials in Na-F codoped ZnO

Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Ultra-low specific contact resistivity (1.4 × 10⁻⁹ Ω·cm²) for metal contacts on in-situ Ga-doped Ge_0.95Sn_0.05 film

Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes

Influence of temperature and wavelength on the switchable photovoltaic response of a BiFe_0.95Mn_0.05O₃ thin film

Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy

Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

Investigation of the effects of misfit strain on barium strontium titanate thin films deposited on base metal substrates by a modified phenomenological model

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