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Journal Articles

Large resistive switching in ultrathin BiFeO3 thin films

Zhijun Ma, Zhiwei Wang, Qi Zhang, Yizhong Guo, Peng Zhou, Kun Liang, Tianjin Zhang, Nagarajan Valanoor
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 154101 (2024)
https://doi.org/10.1063/5.0231809
Published: October 2024
View article titled, Large resistive switching in ultrathin BiFeO<sub>3</sub> thin films
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Journal Articles

Flexible memristors with low-operation voltage and high bending stability based on Cu2AgBiI6 perovskite

Xinci Chen, Xiang Yin, Zicong Li, Lingyu Meng, Xiaoli Han, Zhijun Zhang, Xianmin Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 094501 (2024)
https://doi.org/10.1063/5.0231148
Published: September 2024
View article titled, Flexible memristors with low-operation voltage and high bending stability based on Cu<sub>2</sub>AgBiI<sub>6</sub> perovskite
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Journal Articles

Observation and characterization of titanium-like nano-filament in TiO2 memristor using superconducting electrode(s) and Andreev spectroscopy

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Martin Moško, Mária Koscelanská, Antónia Mošková, Marek Vidiš, Serhii Volkov, Maroš Gregor, Magdaléna Poláčková, Tomáš Roch, Branislav Grančič, Leonid Satrapinskyy, Peter Kúš, Andrej Plecenik, Tomáš Plecenik
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 054303 (2024)
https://doi.org/10.1063/5.0221209
Published: August 2024
View article titled, Observation and characterization of titanium-like nano-filament in TiO<sub>2</sub> memristor using superconducting electrode(s) and Andreev spectroscopy
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Journal Articles

Prospects for memristors with hysteretic memristance as so-far missing core hardware element for transfer-less data computing and storage

Editor’s Pick
Heidemarie Schmidt
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 200902 (2024)
https://doi.org/10.1063/5.0206891
Published: May 2024
View article titled, Prospects for memristors with hysteretic memristance as so-far missing core hardware element for transfer-less data computing and storage
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Journal Articles

Synaptic properties of GaOx-based memristor with amorphous GaOx deposited by RF magnetic sputtering

Yanhong Liu, Qingyuan Zuo, Jiayi Sun, Jianxun Dai, Chuanhui Cheng, Huolin Huang
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 184502 (2024)
https://doi.org/10.1063/5.0202061
Published: May 2024
View article titled, Synaptic properties of GaO<sub>x</sub>-based memristor with amorphous GaO<sub>x</sub> deposited by RF magnetic sputtering
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Journal Articles

Non-volatile resistive switching behavior and time series analysis of Ag/PVA-graphene oxide/Ag device

Mahesh Kumar Yadav, Somnath S. Kundale, Santosh S. Sutar, Tukaram D. Dongale, Pradip Kumar, Neeraj Panwar
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 105101 (2023)
https://doi.org/10.1063/5.0159624
Published: September 2023
View article titled, Non-volatile resistive switching behavior and time series analysis of Ag/PVA-graphene oxide/Ag device
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Journal Articles

Copper oxide memristor as artificial synapses emulating Hebbian symmetric and asymmetric learning behavior for neuromorphic computing beyond von Neumann architecture

Editor’s Pick
Chandra Prakash, Ambesh Dixit
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 044903 (2023)
https://doi.org/10.1063/5.0155463
Published: July 2023
View article titled, Copper oxide memristor as artificial synapses emulating Hebbian symmetric and asymmetric learning behavior for neuromorphic computing beyond von Neumann architecture
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Includes: Supplementary data
Journal Articles

Mimicking bacterial learning and memory in tungsten based two-sided single layers of WSeO, WSeS, WSeSe, and WSeTe

Aykut Turfanda, Hilmi Ünlü
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 174301 (2023)
https://doi.org/10.1063/5.0139576
Published: May 2023
View article titled, Mimicking bacterial learning and memory in tungsten based two-sided single layers of WSeO, WSeS, WSeSe, and WSeTe
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Journal Articles

Tuning the conductance topology in solids

Victor Lopez-Richard, Rafael Schio Wengenroth Silva, Ovidiu Lipan, Fabian Hartmann
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 134901 (2023)
https://doi.org/10.1063/5.0142721
Published: April 2023
View article titled, Tuning the conductance topology in solids
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Journal Articles

Voltage modulated long-term plasticity in perovskite heterostructured memristive synaptic devices with high-performance neuromorphic computing

Jianxing Zhang, Hangfei Li, Tao Liu, Shijie Dong, Sheng Xu, Hailian Li, Jie Su
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 044502 (2023)
https://doi.org/10.1063/5.0133146
Published: January 2023
View article titled, Voltage modulated long-term plasticity in perovskite heterostructured memristive synaptic devices with high-performance neuromorphic computing
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Includes: Supplementary data
Journal Articles

Erratum: “A model of TaOx threshold switching memristor for neuromorphic computing” [J. Appl. Phys. 132, 064904 (2022)]

Xing Li, Zhe Feng, Jianxun Zou, Xu Wang, Guyue Hu, Feifei Wang, Cheng Ding, Yunlai Zhu, Fei Yang, Zuheng Wu, Yuehua Dai
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 139902 (2022)
https://doi.org/10.1063/5.0123486
Published: October 2022
View article titled, Erratum: “A model of TaO<sub>x</sub> threshold switching memristor for neuromorphic computing” [J. Appl. Phys. 132, 064904 (2022)]
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Journal Articles

Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses

Fabia F. Athena, Matthew P. West, Pradip Basnet, Jinho Hah, Qi Jiang, Wei-Cheng Lee, Eric M. Vogel
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 204901 (2022)
https://doi.org/10.1063/5.0087001
Published: May 2022
View article titled, Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses
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Includes: Supplementary data
Journal Articles

Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: A phase field study

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Arijit Roy, Min-Gyu Cho, Pil-Ryung Cha
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 185106 (2022)
https://doi.org/10.1063/5.0087758
Published: May 2022
View article titled, Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: A phase field study
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Includes: Supplementary data
Journal Articles

Memristor compact model with oxygen vacancy concentrations as state variables

Andre Zeumault, Shamiul Alam, Md Omar Faruk, Ahmedullah Aziz
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 124502 (2022)
https://doi.org/10.1063/5.0087038
Published: March 2022
View article titled, Memristor compact model with oxygen vacancy concentrations as state variables
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Journal Articles

Impact of the nucleation of conducting clusters on the retention of memristors: A self-consistent phase-field computational study

Editor’s Pick
Foroozan S. Koushan, Nobuhiko P. Kobayashi
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 054901 (2021)
https://doi.org/10.1063/5.0055083
Published: August 2021
View article titled, Impact of the nucleation of conducting clusters on the retention of memristors: A self-consistent phase-field computational study
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Journal Articles

Retraction: “Φ memristor: Real memristor found” [J. Appl. Phys. 125, 054504 (2019)]

Frank Z. Wang, Ling Li, Luping Shi, Huaqiang Wu, Leon O. Chua
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 029901 (2021)
https://doi.org/10.1063/5.0040852
Published: January 2021
View article titled, Retraction: “Φ memristor: Real memristor found” [J. Appl. Phys. 125, 054504 (2019)]
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Journal Articles

HfO2/TiOx bilayer structure memristor with linear conductance tuning for high density memory and neuromorphic computing

Editor’s Pick
Jian Liu, Huafeng Yang, Zhongyuan Ma, Kunji Chen, Xinfan Huang, Ke Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 184902 (2020)
https://doi.org/10.1063/5.0024668
Published: November 2020
View article titled, HfO<sub>2</sub>/TiO<sub>x</sub> bilayer structure memristor with linear conductance tuning for high density memory and neuromorphic computing
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Journal Articles

An electro-thermal computational study of conducting channels in dielectric thin films using self-consistent phase-field methodology: A view toward the physical origins of resistive switching

Foroozan S. Koushan, Nobuhiko P. Kobayashi
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 165302 (2020)
https://doi.org/10.1063/5.0027702
Published: October 2020
View article titled, An electro-thermal computational study of conducting channels in dielectric thin films using self-consistent phase-field methodology: A view toward the physical origins of resistive switching
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Journal Articles

Realization of In:ZnO/PEDOT:PSS based multifunctional device for ultraviolet (UV) light detection and resistive switching memory applications

Asif Rasool, R. Amiruddin, Shahnaz Kossar, M. C. Santhosh Kumar
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 044503 (2020)
https://doi.org/10.1063/5.0009960
Published: July 2020
View article titled, Realization of In:ZnO/PEDOT:PSS based multifunctional device for ultraviolet (UV) light detection and resistive switching memory applications
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Includes: Supplementary data
Journal Articles

Spiking dynamic behaviors of NbO2 memristive neurons: A model study

Yeheng Bo, Peng Zhang, Yiwen Zhang, Juan Song, Shuai Li, Xinjun Liu
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 245101 (2020)
https://doi.org/10.1063/5.0004139
Published: June 2020
View article titled, Spiking dynamic behaviors of NbO<sub>2</sub> memristive neurons: A model study
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Includes: Supplementary data