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Journal Articles

Defect investigation of undoped wide bandgap materials: Comparison between charge transient spectroscopy (QTS) and inverse Laplace QTS

Rina Yamazaki, Jan Isberg, Nattakarn Suntornwipat, Dmitrii Moldarev, Björn Magnusson, Aisuluu Aitkulova, Saman Majdi

J. Appl. Phys. 137, 155701 (2025)

https://doi.org/10.1063/5.0257511

Published: April 2025

View articletitled, Defect investigation of undoped wide bandgap materials: Comparison between charge transient spectroscopy (QTS) and inverse Laplace QTS

Journal Articles

Erratum: “Ambipolarity of diluted hydrogen in wide-gap oxides revealed by Muon study” [J. Appl. Phys. 132, 105701 (2022)]

M. Hiraishi, H. Okabe, A. Koda, R. Kadono, H. Hosono

J. Appl. Phys. 137, 049901 (2025)

https://doi.org/10.1063/5.0253759

Published: January 2025

View articletitled, Erratum: “Ambipolarity of diluted hydrogen in wide-gap oxides revealed by Muon study” [J. Appl. Phys. 132, 105701 (2022)]

Journal Articles

Defects evolution in Si-based laterally diffused metal oxide semiconductor chip under repetitive gate transmission line pulse stress

Huiying Li, Xinyuan Zheng, Yibo Ning, Chengbing Pan, Kai Wang, Lixia Zhao

J. Appl. Phys. 137, 035701 (2025)

https://doi.org/10.1063/5.0239681

Published: January 2025

View articletitled, Defects evolution in Si-based laterally diffused metal oxide semiconductor chip under repetitive gate transmission line pulse stress

Journal Articles

Statistical analysis of displacement damage in small devices from neutron and ion irradiation

W. R. Wampler, G. Vizkelethy, M. Titze

J. Appl. Phys. 136, 204501 (2024)

https://doi.org/10.1063/5.0237175

Published: November 2024

View articletitled, Statistical analysis of displacement damage in small devices from neutron and ion irradiation

Journal Articles

Defects in semiconductors

Cyrus E. Dreyer, Anderson Janotti, John L. Lyons, Darshana Wickramaratne

J. Appl. Phys. 136, 190401 (2024)

https://doi.org/10.1063/5.0244142

Published: November 2024

View articletitled, Defects in semiconductors

Journal Articles

Temperature dependence of the low-frequency noise in AlGaN/GaN fin field effect transistors

T. K. Liu, H. Lee, X. Y. Luo, E. X. Zhang, R. D. Schrimpf, S. Rajan, D. M. Fleetwood

J. Appl. Phys. 136, 145702 (2024)

https://doi.org/10.1063/5.0230997

Published: October 2024

View articletitled, Temperature dependence of the low-frequency noise in AlGaN/GaN fin field effect transistors

Journal Articles

Insights into oxygen vacancy dynamics in HfO₂–ZrO₂ superlattice ferroelectric films: Implications for device reliability

Maokun Wu, Boyao Cui, Xuepei Wang, Miaojia Yuan, Yishan Wu, Yichen Wen, Jinhao Liu, Ting Zhang, Pengpeng Ren, Sheng Ye, Runsheng Wang, Zhigang Ji, Ru Huang

J. Appl. Phys. 136, 144101 (2024)

https://doi.org/10.1063/5.0227170

Published: October 2024

View articletitled, Insights into oxygen vacancy dynamics in HfO2–ZrO2 superlattice ferroelectric films: Implications for device reliability

Journal Articles

An electro-thermal finite element method (FEM) model for local hotspot kinetics in Cu(In, Ga)Se₂ thin-film solar modules

Suheir Nofal, Timon S. Vaas, Uwe Rau, Bart E. Pieters

J. Appl. Phys. 136, 115102 (2024)

https://doi.org/10.1063/5.0222051

Published: September 2024

View articletitled, An electro-thermal finite element method (FEM) model for local hotspot kinetics in Cu(In, Ga)Se2 thin-film solar modules

Journal Articles

Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC

Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto

J. Appl. Phys. 136, 095702 (2024)

https://doi.org/10.1063/5.0221700

Published: September 2024

View articletitled, Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC

Journal Articles

Improvement of memory storage capacity and prolongation of endurance/retention through H₂ plasma treatment of IGZO/HZO structure

Cheng-Rui Liu, Yu-Tzu Tsai, Yu-Ting Chen, Zheng-Kai Chen, Zi-Rong Huang, Sheng-Min Wang, Chia-Shuo Pai, Ying-Tsan Tang

J. Appl. Phys. 136, 084102 (2024)

https://doi.org/10.1063/5.0214983

Published: August 2024

View articletitled, Improvement of memory storage capacity and prolongation of endurance/retention through H2 plasma treatment of IGZO/HZO structure

Journal Articles

Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

N. Smith, J. Berens, G. Pobegen, T. Grasser, A. Shluger

J. Appl. Phys. 136, 085702 (2024)

https://doi.org/10.1063/5.0213528

Published: August 2024

View articletitled, Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

Journal Articles

The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC

Yanwei Yang, Keqiang Li, Zhouyu Tong, Xiaodong Pi, Deren Yang, Yuanchao Huang

J. Appl. Phys. 136, 045706 (2024)

https://doi.org/10.1063/5.0212043

Published: July 2024

View articletitled, The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC

Journal Articles

The role of carbon segregation in the electrical activity of dislocations in carbon doped GaN

Ze F. Scales, Christian Koller, Liverios Lymperakis, Michael Nelhiebel, Michael Stoeger-Pollach

J. Appl. Phys. 136, 045704 (2024)

https://doi.org/10.1063/5.0213275

Published: July 2024

View articletitled, The role of carbon segregation in the electrical activity of dislocations in carbon doped GaN

Journal Articles

Atomic-level quantum well degradation of GaN-based laser diodes investigated by atom probe tomography

Pengyan Wen, Huixin Xiu, Shuming Zhang, Jianping Liu, Yimeng Chen, Hui Yang

J. Appl. Phys. 136, 043103 (2024)

https://doi.org/10.1063/5.0215654

Published: July 2024

View articletitled, Atomic-level quantum well degradation of GaN-based laser diodes investigated by atom probe tomography

Journal Articles

First-principles calculations on charge states and solubility of impurity defects in BaTiO₃

Tomosato Kanagawa, Daisuke Hirai, Sakyo Hirose

J. Appl. Phys. 136, 034103 (2024)

https://doi.org/10.1063/5.0215428

Published: July 2024

View articletitled, First-principles calculations on charge states and solubility of impurity defects in BaTiO3

Journal Articles

Photon-assisted electron depopulation of 4H-SiC/SiO₂ interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

M. Weger, J. Kuegler, M. Nelhiebel, M. Moser, M. Bockstedte, G. Pobegen

J. Appl. Phys. 136, 034502 (2024)

https://doi.org/10.1063/5.0203724

Published: July 2024

View articletitled, Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

Journal Articles

The effects of different anode manufacturing methods on deep levels in 4H-SiC p⁺n diodes

G. Alfieri, S. Bolat, R. Nipoti

J. Appl. Phys. 135, 235302 (2024)

https://doi.org/10.1063/5.0205559

Published: June 2024

View articletitled, The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes

Journal Articles

Defect dynamics in the presence of excess energetic carriers and high electric fields in wide-gap semiconductors

Andrew O’Hara, Ronald D. Schrimpf, Daniel M. Fleetwood, Sokrates T. Pantelides

J. Appl. Phys. 135, 195701 (2024)

https://doi.org/10.1063/5.0203047

Published: May 2024

View articletitled, Defect dynamics in the presence of excess energetic carriers and high electric fields in wide-gap semiconductors

Journal Articles

Perspective on electrically active defects in β - G a 2 O 3 from deep-level transient spectroscopy and first-principles calculations

Amanda Langørgen, Lasse Vines, Ymir Kalmann Frodason

J. Appl. Phys. 135, 195702 (2024)

https://doi.org/10.1063/5.0205950

Published: May 2024

View articletitled, Perspective on electrically active defects in β - G a 2 O 3 from deep-level transient spectroscopy and first-principles calculations

Journal Articles

The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Matthias Passlack, Nujhat Tasneem, Chinsung Park, Prasanna Venkat Ravindran, Hang Chen, Dipjyoti Das, Shimeng Yu, Edward Chen, Jer-Fu Wang, Chih-Sheng Chang, Yu-Ming Lin, Iuliana Radu, Asif Khan

J. Appl. Phys. 135, 134501 (2024)

https://doi.org/10.1063/5.0180919

Published: April 2024

View articletitled, The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

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Defect investigation of undoped wide bandgap materials: Comparison between charge transient spectroscopy (QTS) and inverse Laplace QTS

Erratum: “Ambipolarity of diluted hydrogen in wide-gap oxides revealed by Muon study” [J. Appl. Phys. 132, 105701 (2022)]

Defects evolution in Si-based laterally diffused metal oxide semiconductor chip under repetitive gate transmission line pulse stress

Statistical analysis of displacement damage in small devices from neutron and ion irradiation

Defects in semiconductors

Temperature dependence of the low-frequency noise in AlGaN/GaN fin field effect transistors

Insights into oxygen vacancy dynamics in HfO₂–ZrO₂ superlattice ferroelectric films: Implications for device reliability

An electro-thermal finite element method (FEM) model for local hotspot kinetics in Cu(In, Ga)Se₂ thin-film solar modules

Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC

Improvement of memory storage capacity and prolongation of endurance/retention through H₂ plasma treatment of IGZO/HZO structure

Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC

The role of carbon segregation in the electrical activity of dislocations in carbon doped GaN

Atomic-level quantum well degradation of GaN-based laser diodes investigated by atom probe tomography

First-principles calculations on charge states and solubility of impurity defects in BaTiO₃

Photon-assisted electron depopulation of 4H-SiC/SiO₂ interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

The effects of different anode manufacturing methods on deep levels in 4H-SiC p⁺n diodes

Defect dynamics in the presence of excess energetic carriers and high electric fields in wide-gap semiconductors

Perspective on electrically active defects in β - G a 2 O 3 from deep-level transient spectroscopy and first-principles calculations

The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

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