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Journal Articles

Ultrasonic characterization of bonding interfaces using Stoneley waves

Haonan Ju, Tianming Ye, Wenxiang Hu, Hengguang Shen

J. Appl. Phys. 136, 094901 (2024)

https://doi.org/10.1063/5.0222221

Published: September 2024

View article titled, Ultrasonic characterization of bonding interfaces using Stoneley waves

Journal Articles

High temperature evolution of a confined silicon layer

Maëlle Le Cunff, François Rieutord, Didier Landru, Oleg Kononchuk, Nikolay Cherkashin

J. Appl. Phys. 135, 245301 (2024)

https://doi.org/10.1063/5.0205878

Published: June 2024

View article titled, High temperature evolution of a confined silicon layer

Journal Articles

Measurement of the bonding energy via non-planar direct bonding

Pascal Birckigt, Carolin Rothhardt, Gerd Harnisch, Stefan Risse, Uwe D. Zeitner

J. Appl. Phys. 133, 215302 (2023)

https://doi.org/10.1063/5.0139204

Published: June 2023

View article titled, Measurement of the bonding energy via non-planar direct bonding

Journal Articles

Electrical properties and energy band alignments of p-Si/n-Ga₂O₃ and p⁺-Si/n-Ga₂O₃ heterostructures fabricated by surface-activated bonding

Zhenwei Wang, Takahiro Kitada, Daiki Takatsuki, Jianbo Liang, Naoteru Shigekawa, Masataka Higashiwaki

J. Appl. Phys. 133, 194503 (2023)

https://doi.org/10.1063/5.0128554

Published: May 2023

View article titled, Electrical properties and energy band alignments of p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding

Journal Articles

Double cantilever beam bonding energy measurement using confocal IR microscopy

L. Colonel, A. Calvez, F. Fournel, V. Larrey, S. Moreau, F. Mazen, F. Rieutord

J. Appl. Phys. 132, 215106 (2022)

https://doi.org/10.1063/5.0114668

Published: December 2022

View article titled, Double cantilever beam bonding energy measurement using confocal IR microscopy

Journal Articles

Characterization of interfacial stiffness in film–substrate structure using Scholte waves

Tianming Ye, Wenxiang Hu

J. Appl. Phys. 132, 094901 (2022)

https://doi.org/10.1063/5.0097949

Published: September 2022

View article titled, Characterization of interfacial stiffness in film–substrate structure using Scholte waves

Journal Articles

Fabrication of n-Si/n-Ga₂O₃ heterojunctions by surface-activated bonding and their electrical properties

Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Takahiro Kitada, Naoteru Shigekawa, Masataka Higashiwaki

J. Appl. Phys. 131, 074501 (2022)

https://doi.org/10.1063/5.0080734

Published: February 2022

View article titled, Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties

Journal Articles

Low-temperature direct bonding of SiC and Ga₂O₃ substrates under atmospheric conditions

Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa, Eiji Higurashi

J. Appl. Phys. 130, 085303 (2021)

https://doi.org/10.1063/5.0057960

Published: August 2021

View article titled, Low-temperature direct bonding of SiC and Ga2O3 substrates under atmospheric conditions

Includes: Supplementary data

Journal Articles

Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits

C. R. H. McRae, A. McFadden, R. Zhao, H. Wang, J. L. Long, T. Zhao, S. Park, M. Bal, C. J. Palmstrøm, D. P. Pappas

J. Appl. Phys. 129, 025109 (2021)

https://doi.org/10.1063/5.0029855

Published: January 2021

View article titled, Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits

Journal Articles

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Anthony P. McFadden, Aranya Goswami, Michael Seas, Corey Rae H. McRae, Ruichen Zhao, David P. Pappas, Christopher J. Palmstrøm

J. Appl. Phys. 128, 115301 (2020)

https://doi.org/10.1063/5.0023743

Published: September 2020

View article titled, Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Journal Articles

Small data materials design with machine learning: When the average model knows best

Danny E. P. Vanpoucke, Onno S. J. van Knippenberg, Ko Hermans, Katrien V. Bernaerts, Siamak Mehrkanoon

J. Appl. Phys. 128, 054901 (2020)

https://doi.org/10.1063/5.0012285

Published: August 2020

View article titled, Small data materials design with machine learning: When the average model knows best

Includes: Supplementary data

Journal Articles

Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density

Bongkwon Son, Yiding Lin, Kwang Hong Lee, Qimiao Chen, Chuan Seng Tan

J. Appl. Phys. 127, 203105 (2020)

https://doi.org/10.1063/5.0005112

Published: May 2020

View article titled, Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density

Journal Articles

InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

Masafumi Yokoyama, Haruki Yokoyama, Mitsuru Takenaka, Shinichi Takagi

J. Appl. Phys. 125, 114501 (2019)

https://doi.org/10.1063/1.5049518

Published: March 2019

View article titled, InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

Journal Articles

Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding

A. Jung, Y. Zhang, Y. Arroyo Rojas Dasilva, F. Isa, H. von Känel

J. Appl. Phys. 123, 085701 (2018)

https://doi.org/10.1063/1.5020139

Published: February 2018

View article titled, Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding

Journal Articles

Effects of thermal annealing on structural and electrical properties of surface-activated n-GaSb/n-GaInP direct wafer bonds

Felix Predan, András Kovács, Jens Ohlmann, David Lackner, Rafal E. Dunin-Borkowski, Frank Dimroth, Wolfgang Jäger

J. Appl. Phys. 122, 135307 (2017)

https://doi.org/10.1063/1.5002080

Published: October 2017

View article titled, Effects of thermal annealing on structural and electrical properties of surface-activated n-GaSb/n-GaInP direct wafer bonds

Journal Articles

Investigation of the properties of semiconductor wafer bonding in multijunction solar cells via metal-nanoparticle arrays

Takeshi Tayagaki, Kikuo Makita, Hidenori Mizuno, Takeyoshi Sugaya

J. Appl. Phys. 122, 023101 (2017)

https://doi.org/10.1063/1.4992805

Published: July 2017

View article titled, Investigation of the properties of semiconductor wafer bonding in multijunction solar cells via metal-nanoparticle arrays

Journal Articles

Physical mechanisms of copper-copper wafer bonding

B. Rebhan, K. Hingerl

J. Appl. Phys. 118, 135301 (2015)

https://doi.org/10.1063/1.4932146

Published: October 2015

View article titled, Physical mechanisms of copper-copper wafer bonding

Journal Articles

Laboratory x-ray microscopy on high brilliance sources equipped with waveguides

C. Fella, A. Balles, S. Zabler, R. Hanke, R. Tjeung, S. Nguyen, D. Pelliccia

J. Appl. Phys. 118, 034904 (2015)

https://doi.org/10.1063/1.4927038

Published: July 2015

View article titled, Laboratory x-ray microscopy on high brilliance sources equipped with waveguides

Journal Articles

Reliable four-point flexion test and model for die-to-wafer direct bonding

T. Tabata, L. Sanchez, F. Fournel, H. Moriceau

J. Appl. Phys. 118, 015301 (2015)

https://doi.org/10.1063/1.4923357

Published: July 2015

View article titled, Reliable four-point flexion test and model for die-to-wafer direct bonding

Journal Articles

Accelerated domain switching speed in single-crystal LiNbO₃ thin films

J. Jiang, X. J. Meng, D. Q. Geng, A. Q. Jiang

J. Appl. Phys. 117, 104101 (2015)

https://doi.org/10.1063/1.4914483

Published: March 2015

View article titled, Accelerated domain switching speed in single-crystal LiNbO3 thin films

NARROW

Topics

Ultrasonic characterization of bonding interfaces using Stoneley waves

High temperature evolution of a confined silicon layer

Measurement of the bonding energy via non-planar direct bonding

Electrical properties and energy band alignments of p-Si/n-Ga₂O₃ and p⁺-Si/n-Ga₂O₃ heterostructures fabricated by surface-activated bonding

Double cantilever beam bonding energy measurement using confocal IR microscopy

Characterization of interfacial stiffness in film–substrate structure using Scholte waves

Fabrication of n-Si/n-Ga₂O₃ heterojunctions by surface-activated bonding and their electrical properties

Low-temperature direct bonding of SiC and Ga₂O₃ substrates under atmospheric conditions

Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Small data materials design with machine learning: When the average model knows best

Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density

InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding

Effects of thermal annealing on structural and electrical properties of surface-activated n-GaSb/n-GaInP direct wafer bonds

Investigation of the properties of semiconductor wafer bonding in multijunction solar cells via metal-nanoparticle arrays

Physical mechanisms of copper-copper wafer bonding

Laboratory x-ray microscopy on high brilliance sources equipped with waveguides

Reliable four-point flexion test and model for die-to-wafer direct bonding

Accelerated domain switching speed in single-crystal LiNbO₃ thin films

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