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Journal Articles

Chasing Schottky–Mott: Metal-first non-alloyed contacts to β-Ga2O3 for interface quality and minimal surface modification

Editor’s Pick
Kathleen T. Smith, Cameron A. Gorsak, Joshua T. Buontempo, Bennett J. Cromer, Takumi Ikenoue, Hemant Gulupalli, Michael O. Thompson, Debdeep Jena, Hari P. Nair, Huili Grace Xing
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 215302 (2024)
https://doi.org/10.1063/5.0238720
Published: December 2024
View article titled, Chasing Schottky–Mott: Metal-first non-alloyed contacts to <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> for interface quality and minimal surface modification
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Journal Articles

Nickel stanogermanides thin films: Phases formation, kinetics, and Sn segregation

H. Khelidj, A. Portavoce, K. Hoummada, M. Bertoglio, M. C. Benoudia, M. Descoins, D. Mangelinck
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 095301 (2024)
https://doi.org/10.1063/5.0220979
Published: September 2024
View article titled, Nickel stanogermanides thin films: Phases formation, kinetics, and Sn segregation
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Journal Articles

Dipole engineering to achieve interface dependent electric contact in Janus MoSO/graphene heterostructure

Wei Zhang, Weixiao Ji
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 084304 (2024)
https://doi.org/10.1063/5.0220170
Published: August 2024
View article titled, Dipole engineering to achieve interface dependent electric contact in Janus MoSO/graphene heterostructure
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Journal Articles

Enhancing performance of Au-hyperdoped Si photodetectors for infrared detection

Yining Liu, Wenjie Yang, Quentin Hudspeth, Andrew Sarangan, Imad Agha, James S. Williams, Jeffrey M. Warrender, Jay Mathews
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 235701 (2024)
https://doi.org/10.1063/5.0198543
Published: June 2024
View article titled, Enhancing performance of Au-hyperdoped Si photodetectors for infrared detection
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Journal Articles

Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain

Takuya Hoshi, Yuki Yoshiya, Hiroki Sugiyama, Fumito Nakajima
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 145703 (2024)
https://doi.org/10.1063/5.0194197
Published: April 2024
View article titled, Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain
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Journal Articles

Anisotropic hole transport along [0001] and [11 2 ¯ 0] direction in p-doped (10 1 ¯ 0) GaN

Yingying Lin, Jia Wang, Markus Pristovsek, Yoshio Honda, Hiroshi Amano
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 235701 (2023)
https://doi.org/10.1063/5.0177681
Published: December 2023
View article titled, Anisotropic hole transport along [0001] and [11 2 ¯ 0] direction in p-doped (10 1 ¯ 0) GaN
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Journal Articles

Polarization-stable single-mode multi-junction VCSELs with integrated anti-phase mode filter

Amirhossein Ghods, Matthew Dummer, Klein Johnson
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 213103 (2023)
https://doi.org/10.1063/5.0178932
Published: December 2023
View article titled, Polarization-stable single-mode multi-junction VCSELs with integrated anti-phase mode filter
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Journal Articles

New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

J. L. Autran, D. Munteanu
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 175701 (2023)
https://doi.org/10.1063/5.0156698
Published: November 2023
View article titled, New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices
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Journal Articles

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Yang Liu, Chen Fu, Guangyuan Jiang, Guangyuan Zhang, Guang Yang, Yuanjie Lv, Zhaojun Lin
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 165703 (2023)
https://doi.org/10.1063/5.0172695
Published: October 2023
View article titled, Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors
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Journal Articles

Thermal stability study of gallium nitride based magnetic field sensor

Satish Shetty, Andrian Kuchuk, Mohammad Zamani-Alavijeh, Ayesha Hassan, Savannah R. Eisner, Fernando Maia de Oliveira, Alexis Krone, John Harris, Josh P. Thompson, Nirosh M. Eldose, Yuriy I. Mazur, David Huitink, Debbie G. Senesky, H. Alan Mantooth, Gregory J. Salamo
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 145303 (2023)
https://doi.org/10.1063/5.0156013
Published: October 2023
View article titled, Thermal stability study of gallium nitride based magnetic field sensor
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Journal Articles

Significant effect of thin oxide layer on characteristics of p-InGaN/GaN nonalloyed ohmic contacts

Fan Zhang, Rongxin Wang, Fangzhi Li, Aiqin Tian, Jianping Liu, Hui Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 055302 (2023)
https://doi.org/10.1063/5.0140421
Published: August 2023
View article titled, Significant effect of thin oxide layer on characteristics of p-InGaN/GaN nonalloyed ohmic contacts
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Journal Articles

Evolution of the Ni0.9Pt0.1/Si system under annealing via nano-crystalline textured phases

S. Guillemin, P. Gergaud, N. Bernier, M. Merlin, C. Delwail, S. Minoret, R. Famulok, M. Gregoire, F. Nemouchi, Ph. Rodriguez
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 035305 (2023)
https://doi.org/10.1063/5.0139249
Published: July 2023
View article titled, Evolution of the Ni<sub>0.9</sub>Pt<sub>0.1</sub>/Si system under annealing via nano-crystalline textured phases
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Journal Articles

4H-SiC Ohmic contacts formation by MoS2 layer intercalation: A first-principles study

Lingqin Huang, Sumin Pan, Xuliang Deng, Wenwen Cui
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 245702 (2022)
https://doi.org/10.1063/5.0122722
Published: December 2022
View article titled, 4H-SiC Ohmic contacts formation by MoS<sub>2</sub> layer intercalation: A first-principles study
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Includes: Supplementary data
Journal Articles

Generation–recombination noise in uniformly doped semiconductors with contacts of finite surface recombination velocities

Chan Hyeong Park
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 214501 (2022)
https://doi.org/10.1063/5.0111954
Published: December 2022
View article titled, Generation–recombination noise in uniformly doped semiconductors with contacts of finite surface recombination velocities
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Journal Articles

Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact

Ling Yang, Hao Lu, Xuerui Niu, Meng Zhang, Chunzhou Shi, Longge Deng, Bin Hou, Minhan Mi, Mei Wu, Kai Cheng, Qing Zhu, Yang Lu, Ling Lv, Xiaohua Ma, Yue Hao
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 165703 (2022)
https://doi.org/10.1063/5.0106827
Published: October 2022
View article titled, Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact
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Journal Articles

Graphene/Cs2PbI2Cl2 van der Waals heterostructure with tunable Schottky barriers and contact types

Min Wang, Ting-Ping Hou, Kai-Ming Wu, Heng-Fu Lin
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 165101 (2022)
https://doi.org/10.1063/5.0104799
Published: October 2022
View article titled, Graphene/Cs<sub>2</sub>PbI<sub>2</sub>Cl<sub>2</sub> van der Waals heterostructure with tunable Schottky barriers and contact types
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Includes: Supplementary data
Journal Articles

Schottky–Mott limit in graphene inserted 2D semiconductor–metal interfaces

Sanchali Mitra, Santanu Mahapatra
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 145301 (2022)
https://doi.org/10.1063/5.0106620
Published: October 2022
View article titled, Schottky–Mott limit in graphene inserted 2D semiconductor–metal interfaces
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Includes: Supplementary data
Journal Articles

Rhenium-based low resistivity and low annealing temperature ohmic contacts to n-GaN

Amit P. Shah, Bhagyashree A. Chalke, Vilas J. Mhatre, Arnab Bhattacharya
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 075701 (2022)
https://doi.org/10.1063/5.0082396
Published: August 2022
View article titled, Rhenium-based low resistivity and low annealing temperature ohmic contacts to n-GaN
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Includes: Supplementary data
Journal Articles

Identifying the physical mechanisms of polycrystalline lead salt photoconductors

Steven Jost
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 064503 (2022)
https://doi.org/10.1063/5.0098505
Published: August 2022
View article titled, Identifying the physical mechanisms of polycrystalline lead salt photoconductors
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Journal Articles

Numerical simulation on controlling the front-side temperature of thinned SiC substrate during ohmic contact to Ni or Ti using back-side laser annealing

Jianwen Ding, Xin Li, Kaiming Yang, Yu Zhu
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 035703 (2022)
https://doi.org/10.1063/5.0091886
Published: July 2022
View article titled, Numerical simulation on controlling the front-side temperature of thinned SiC substrate during ohmic contact to Ni or Ti using back-side laser annealing
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