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Journal Articles

Achieving robust ferroelectric polarization in uncapped Hf0.5Zr0.5O2 thin films by incorporating Al dopant

Open Access
Xin Liu, Weidong Zhao, Jiawei Wang, Lulu Yao, Man Ding, Yonghong Cheng
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 084103 (2025)
https://doi.org/10.1063/5.0246276
Published: February 2025
View articletitled, Achieving robust ferroelectric polarization in uncapped Hf0.5Zr0.5O2 thin films by incorporating Al dopant
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Journal Articles

Improvement of memory storage capacity and prolongation of endurance/retention through H2 plasma treatment of IGZO/HZO structure

Open Access
Cheng-Rui Liu, Yu-Tzu Tsai, Yu-Ting Chen, Zheng-Kai Chen, Zi-Rong Huang, Sheng-Min Wang, Chia-Shuo Pai, Ying-Tsan Tang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 084102 (2024)
https://doi.org/10.1063/5.0214983
Published: August 2024
View articletitled, Improvement of memory storage capacity and prolongation of endurance/retention through H2 plasma treatment of IGZO/HZO structure
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Journal Articles

Electron beam-induced current imaging of ferroelectric domains and local polarization reversal in Hf0.5Zr0.5O2

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Evgeny Korostylev, Vitalii Mikheev, Anna G. Chernikova, Maksim Yu. Zhuk, Anastasia Chouprik, Dmitry V. Negrov
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 154101 (2023)
https://doi.org/10.1063/5.0143588
Published: April 2023
View articletitled, Electron beam-induced current imaging of ferroelectric domains and local polarization reversal in Hf0.5Zr0.5O2
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Includes: Supplementary data
Journal Articles

Preisach modeling of imprint on hafnium zirconium oxide ferroelectric capacitors

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Paul Chojecki, Glen Walters, Zane Forrester, Toshikazu Nishida
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 094102 (2021)
https://doi.org/10.1063/5.0053185
Published: September 2021
View articletitled, Preisach modeling of imprint on hafnium zirconium oxide ferroelectric capacitors
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Includes: Supplementary data
Journal Articles

Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors

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Batzorig Buyantogtokh, Venkateswarlu Gaddam, Sanghun Jeon
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 244106 (2021)
https://doi.org/10.1063/5.0050535
Published: June 2021
View articletitled, Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors
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Journal Articles

Electrical properties of integrated capacitors made of BST and BCTZ material for impedance adaptation applications

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P. Gardes, M. Diatta, M. Proust, E. Bouyssou, P. Poveda
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 214101 (2021)
https://doi.org/10.1063/5.0050563
Published: June 2021
View articletitled, Electrical properties of integrated capacitors made of BST and BCTZ material for impedance adaptation applications
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Journal Articles

Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions

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Kenji Nomura, Wensheng Wang, Ko Nakamura, Takashi Eshita, Kazuaki Takai, Soichiro Ozawa, Hideshi Yamaguchi, Satoru Mihara, Yukinobu Hikosaka, Hitoshi Saito, Yuji Kataoka, Manabu Kojima
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 074105 (2019)
https://doi.org/10.1063/1.5091501
Published: August 2019
View articletitled, Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions
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Journal Articles

Radiation-induced changes of vacancy-type defects in ferroelectric capacitors as revealed by Doppler broadening positron annihilation spectroscopy

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Hanhan Zhou, Ming Liu, Samuel C. Williams, Lee A. Griffin, Cory D. Cress, Manuel Rivas, Ryan Q. Rudy, Ronald G. Polcawich, Evan R. Glaser, Nazanin Bassiri-Gharb, Ayman I. Hawari, Jacob L. Jones
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 244105 (2018)
https://doi.org/10.1063/1.5045189
Published: December 2018
View articletitled, Radiation-induced changes of vacancy-type defects in ferroelectric capacitors as revealed by Doppler broadening positron annihilation spectroscopy
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Includes: Supplementary data
Journal Articles

Transient carrier transport and rearrangement of Schottky barrier layers under the action of a bias applied to the M/PZT/M structure

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L. A. Delimova, V. S. Yuferev
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 184102 (2018)
https://doi.org/10.1063/1.5052613
Published: November 2018
View articletitled, Transient carrier transport and rearrangement of Schottky barrier layers under the action of a bias applied to the M/PZT/M structure
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Journal Articles

Polarization and charge carrier density coupling in epitaxial PbZr0.2Ti0.8O3/ZnO heterostructures

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Juan Wang, Ruohanyang Leng, Pavel Salev, Mikal Cole, Alexei Grigoriev
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 164107 (2018)
https://doi.org/10.1063/1.5048212
Published: October 2018
View articletitled, Polarization and charge carrier density coupling in epitaxial PbZr0.2Ti0.8O3/ZnO heterostructures
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Journal Articles

Model of dielectric breakdown in hafnia-based ferroelectric capacitors

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Kan-Hao Xue, Hai-Lei Su, Yi Li, Hua-Jun Sun, Wei-Fan He, Ting-Chang Chang, Lin Chen, David Wei Zhang, Xiang-Shui Miao
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 024103 (2018)
https://doi.org/10.1063/1.5031491
Published: July 2018
View articletitled, Model of dielectric breakdown in hafnia-based ferroelectric capacitors
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Journal Articles

On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2

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F. P. G. Fengler, M. Hoffmann, S. Slesazeck, T. Mikolajick, U. Schroeder
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 204101 (2018)
https://doi.org/10.1063/1.5026424
Published: May 2018
View articletitled, On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2
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Journal Articles

Ferroelectric negative capacitance domain dynamics

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Michael Hoffmann, Asif Islam Khan, Claudy Serrao, Zhongyuan Lu, Sayeef Salahuddin, Milan Pešić, Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 184101 (2018)
https://doi.org/10.1063/1.5030072
Published: May 2018
View articletitled, Ferroelectric negative capacitance domain dynamics
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Includes: Supplementary data
Journal Articles

Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications

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K. Florent, S. Lavizzari, M. Popovici, L. Di Piazza, U. Celano, G. Groeseneken, J. Van Houdt
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 204103 (2017)
https://doi.org/10.1063/1.4984068
Published: May 2017
View articletitled, Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications
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Journal Articles

Ca doping dependence of resistive switching characteristics in ferroelectric capacitors comprising Ca-doped BiFeO3

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Liang Liu, Atsushi Tsurumaki-Fukuchi, Hiroyuki Yamada, Akihito Sawa
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 204104 (2015)
https://doi.org/10.1063/1.4936308
Published: November 2015
View articletitled, Ca doping dependence of resistive switching characteristics in ferroelectric capacitors comprising Ca-doped BiFeO3
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Journal Articles

Ferroelectric polarization and defect-dipole switching in an epitaxial (111) BiFeO3 thin film

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Boyuan Zhao, Zhihui Chen, Jianwei Meng, Hongliang Lu, David Wei Zhang, Anquan Jiang
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 204103 (2015)
https://doi.org/10.1063/1.4921808
Published: May 2015
View articletitled, Ferroelectric polarization and defect-dipole switching in an epitaxial (111) BiFeO3 thin film
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Journal Articles

Eddy currents: A misleading contribution when measuring magnetoelectric voltage coefficients of thin film devices

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J. More-Chevalier, C. Cibert, R. Bouregba, G. Poullain
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 154104 (2015)
https://doi.org/10.1063/1.4917534
Published: April 2015
View articletitled, Eddy currents: A misleading contribution when measuring magnetoelectric voltage coefficients of thin film devices
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Journal Articles

General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films

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L. Pintilie, L. Hrib, I. Pasuk, C. Ghica, A. Iuga, I. Pintilie
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 044108 (2014)
https://doi.org/10.1063/1.4891255
Published: July 2014
View articletitled, General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films
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Journal Articles

Misfit strain-temperature phase diagrams and domain stability of asymmetric ferroelectric capacitors: Thermodynamic calculation and phase-field simulation

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W. J. Chen, Yue Zheng, B. Wang, D. C. Ma, C. M. Wu
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 094101 (2014)
https://doi.org/10.1063/1.4867480
Published: March 2014
View articletitled, Misfit strain-temperature phase diagrams and domain stability of asymmetric ferroelectric capacitors: Thermodynamic calculation and phase-field simulation
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Journal Articles

Self-consistent model of polarization switching kinetics in disordered ferroelectrics

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Yuri A. Genenko, Jens Wehner, Heinz von Seggern
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 084101 (2013)
https://doi.org/10.1063/1.4818951
Published: August 2013
View articletitled, Self-consistent model of polarization switching kinetics in disordered ferroelectrics
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