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Journal Articles

Experimental discrimination of domain switching behaviors within interfacial and bulk layers in the LiNbO3 domain-wall memory

Wen Di Zhang, An Quan Jiang
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 024101 (2025)
https://doi.org/10.1063/5.0242544
Published: January 2025
View article titled, Experimental discrimination of domain switching behaviors within interfacial and bulk layers in the LiNbO<sub>3</sub> domain-wall memory
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Journal Articles

Prediction of neuronal functionality of asymmetric ferroelectric tunneling junction with coupled polarization and thermal dynamics

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Zhenxun Tang, Linjie Liu, Jianyuan Zhang, Weijin Chen, Yue Zheng
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 024502 (2025)
https://doi.org/10.1063/5.0239947
Published: January 2025
View article titled, Prediction of neuronal functionality of asymmetric ferroelectric tunneling junction with coupled polarization and thermal dynamics
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Journal Articles

A spin-injected ferroelectric tunnel junction based on spin-dependent screening theory

Xingwen Zheng, Xi Zuo, Yuzhen Liu, Chuanhui Chen, Bin Cui, Shusheng Xu
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 144101 (2024)
https://doi.org/10.1063/5.0173184
Published: April 2024
View article titled, A spin-injected ferroelectric tunnel junction based on spin-dependent screening theory
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Journal Articles

Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Jessica Haglund-Peterson, Benjamin L. Aronson, Samantha T. Jaszewski, Scott Habermehl, Giovanni Esteves, John F. Conley, Jr., Jon F. Ihlefeld, M. David Henry
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 094104 (2024)
https://doi.org/10.1063/5.0191757
Published: March 2024
View article titled, Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes
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Journal Articles

Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions

J. Barbot, R. Fontanini, M. Segatto, J. Coignus, F. Triozon, C. Carabasse, M. Bedjaoui, F. Andrieu, D. Esseni, L. Grenouillet
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 214102 (2023)
https://doi.org/10.1063/5.0176374
Published: December 2023
View article titled, Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions
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Journal Articles

Influence of electrostriction and voltage-induced screening effects on the tunnel electroresistance in tunnel junctions with composite ferroelectric barriers

Deepali Jagga, Artur Useinov
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 124101 (2023)
https://doi.org/10.1063/5.0166078
Published: September 2023
View article titled, Influence of electrostriction and voltage-induced screening effects on the tunnel electroresistance in tunnel junctions with composite ferroelectric barriers
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Journal Articles

Calculation of tunneling current across trapezoidal potential barrier in a scanning tunneling microscope

Malati Dessai, Arun V. Kulkarni
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 244901 (2022)
https://doi.org/10.1063/5.0132208
Published: December 2022
View article titled, Calculation of tunneling current across trapezoidal potential barrier in a scanning tunneling microscope
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Journal Articles

Disentangling electronic and thermal contributions to light-induced resistance switching in BaTiO3 ferroelectric tunnel junction

Xiao Long, Huan Tan, Florencio Sánchez, Ignasi Fina, Josep Fontcuberta
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 214103 (2022)
https://doi.org/10.1063/5.0125040
Published: December 2022
View article titled, Disentangling electronic and thermal contributions to light-induced resistance switching in BaTiO<sub>3</sub> ferroelectric tunnel junction
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Includes: Supplementary data
Journal Articles

Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb:SrTiO3 stack

M. Dossena, G. Malavena, A. S. Spinelli, C. Monzio Compagnoni
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 074502 (2022)
https://doi.org/10.1063/5.0100460
Published: August 2022
View article titled, Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO<sub>3</sub>/Nb:SrTiO<sub>3</sub> stack
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Journal Articles

Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides

Achintya Priydarshi, Yogesh Singh Chauhan, Somnath Bhowmick, Amit Agarwal
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 034101 (2022)
https://doi.org/10.1063/5.0072124
Published: January 2022
View article titled, Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides
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Includes: Supplementary data
Journal Articles

Hot-carrier enhanced light emission: The origin of above-threshold photons from electrically driven plasmonic tunnel junctions

Yunxuan Zhu, Longji Cui, Douglas Natelson
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 233105 (2020)
https://doi.org/10.1063/5.0024392
Published: December 2020
View article titled, Hot-carrier enhanced light emission: The origin of above-threshold photons from electrically driven plasmonic tunnel junctions
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Journal Articles

Revisiting the switching characteristics and electroresistance effect in ferroelectric thin film towards an optimized hybrid switching strategy

Xiaoyue Zhang, Weijin Chen, Bangmin Zhang, Weiming Xiong, Yue Zheng
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 224104 (2020)
https://doi.org/10.1063/5.0024166
Published: December 2020
View article titled, Revisiting the switching characteristics and electroresistance effect in ferroelectric thin film towards an optimized hybrid switching strategy
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Includes: Supplementary data
Journal Articles

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Anthony P. McFadden, Aranya Goswami, Michael Seas, Corey Rae H. McRae, Ruichen Zhao, David P. Pappas, Christopher J. Palmstrøm
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 115301 (2020)
https://doi.org/10.1063/5.0023743
Published: September 2020
View article titled, Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique
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Journal Articles

Systematic method for studying single-electron transistors

D. M. Dobrynin, V. V. Shorokhov
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 034301 (2020)
https://doi.org/10.1063/5.0009954
Published: July 2020
View article titled, Systematic method for studying single-electron transistors
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Journal Articles

The effect of strain on tunnel barrier height in silicon quantum devices

Ryan M. Stein, M. D. Stewart, Jr.
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 024303 (2020)
https://doi.org/10.1063/5.0010253
Published: July 2020
View article titled, The effect of strain on tunnel barrier height in silicon quantum devices
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Includes: Supplementary data
Journal Articles

Requirements of epitaxially grown InGaAs channel layers for tunnel field-effect transistors

Masafumi Yokoyama, Taketsugu Yamamoto, Dae-Hwan Ahn, Mitsuru Takenaka, Shinichi Takagi
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 225702 (2020)
https://doi.org/10.1063/5.0008995
Published: June 2020
View article titled, Requirements of epitaxially grown InGaAs channel layers for tunnel field-effect transistors
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Journal Articles

Tunneling through a dielectric/ferromagnetic/ferroelectric three-step-like composite barrier

Yihao Wang, Peng Zhou, Jiaolian Liu, Zhijun Ma, Tianjin Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 104101 (2020)
https://doi.org/10.1063/1.5143059
Published: March 2020
View article titled, Tunneling through a dielectric/ferromagnetic/ferroelectric three-step-like composite barrier
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Journal Articles

Anisotropic current induced in topological surface states due to spin-polarized tunneling from a ferromagnet

G. Bergmann, R. S. Thompson, P. L. Tse, J. G. Lu
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 073905 (2020)
https://doi.org/10.1063/1.5099985
Published: February 2020
View article titled, Anisotropic current induced in topological surface states due to spin-polarized tunneling from a ferromagnet
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Journal Articles

Terahertz frequency spectrum analysis with a nanoscale antiferromagnetic tunnel junction

Editor’s Pick
P. Yu. Artemchuk, O. R. Sulymenko, S. Louis, J. Li, R. S. Khymyn, E. Bankowski, T. Meitzler, V. S. Tyberkevych, A. N. Slavin, O. V. Prokopenko
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 063905 (2020)
https://doi.org/10.1063/1.5140552
Published: February 2020
View article titled, Terahertz frequency spectrum analysis with a nanoscale antiferromagnetic tunnel junction
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Journal Articles

Disorder and critical current variability in Josephson junctions

Miguel Antonio Sulangi, T. A. Weingartner, N. Pokhrel, E. Patrick, M. Law, P. J. Hirschfeld
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 033901 (2020)
https://doi.org/10.1063/1.5125765
Published: January 2020
View article titled, Disorder and critical current variability in Josephson junctions
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