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Journal Articles

Detection of defect levels in vicinity of Al2O3/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method

Masamichi Akazawa, Yuya Tamamura, Takahide Nukariya, Kouta Kubo, Taketomo Sato, Tetsuo Narita, Tetsu Kachi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 195302 (2022)
https://doi.org/10.1063/5.0109117
Published: November 2022
View article titled, Detection of defect levels in vicinity of Al<sub>2</sub>O<sub>3</sub>/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method
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Journal Articles

Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond

Atsushi Hiraiwa, Satoshi Okubo, Masahiko Ogura, Yu Fu, Hiroshi Kawarada
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 125702 (2022)
https://doi.org/10.1063/5.0104016
Published: September 2022
View article titled, Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond
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Includes: Supplementary data
Journal Articles

Influence of structural properties on the ferroelectric behavior of hexagonal AlScN

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M. Yassine, A. Nair, J. Fammels, E. Wade, Z. Fu, A. Yassine, L. Kirste, O. Ambacher
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 114101 (2022)
https://doi.org/10.1063/5.0103578
Published: September 2022
View article titled, Influence of structural properties on the ferroelectric behavior of hexagonal AlScN
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Journal Articles

Quantitative evaluation of plasma-damaged SiN/Si structures using bias-dependent admittance analysis

Tomohiro Kuyama, Keiichiro Urabe, Koji Eriguchi
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 133302 (2022)
https://doi.org/10.1063/5.0085042
Published: April 2022
View article titled, Quantitative evaluation of plasma-damaged SiN/Si structures using bias-dependent admittance analysis
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Journal Articles

Ferroelectricity in hafnium oxide films doped with magnesium by chemical solution deposition

Ziqi Li, Dayu Zhou, Jingjing Wang, Nana Sun, Weiqi Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 074101 (2022)
https://doi.org/10.1063/5.0077616
Published: February 2022
View article titled, Ferroelectricity in hafnium oxide films doped with magnesium by chemical solution deposition
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Journal Articles

Extraction of dipolar coupling constants from low-frequency electrically detected magnetic resonance and near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation

Elias B. Frantz, Nicholas J. Harmon, David J. Michalak, Eric M. Henry, Michael E. Flatté, Sean W. King, James S. Clarke, Patrick M. Lenahan
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 234401 (2021)
https://doi.org/10.1063/5.0075460
Published: December 2021
View article titled, Extraction of dipolar coupling constants from low-frequency electrically detected magnetic resonance and near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation
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Journal Articles

Dynamic space-charge-controlled field emission model of current conduction in metal–insulator–semiconductor capacitors

Atsushi Hiraiwa (平岩 篤), Kiyotaka Horikawa (堀川 清貴), Hiroshi Kawarada (川原田 洋)
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 065307 (2020)
https://doi.org/10.1063/1.5138729
Published: February 2020
View article titled, Dynamic space-charge-controlled field emission model of current conduction in metal–insulator–semiconductor capacitors
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Journal Articles

Gate/insulator-interfacial-dipole-controlled current conduction in Al2O3 metal-insulator-semiconductor capacitors

Satoshi Okubo (大久保 智), Kiyotaka Horikawa (堀川 清貴), Hiroshi Kawarada (川原田 洋), Atsushi Hiraiwa (平岩 篤)
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 045704 (2019)
https://doi.org/10.1063/1.5089600
Published: July 2019
View article titled, Gate/insulator-interfacial-dipole-controlled current conduction in Al<sub>2</sub>O<sub>3</sub> metal-insulator-semiconductor capacitors
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Journal Articles

Advanced photo-assisted capacitance–voltage characterization of insulator/wide-bandgap semiconductor interface using super-bandgap illumination

Atsushi Hiraiwa (平岩 篤), Satoshi Okubo (大久保 智), Kiyotaka Horikawa (堀川 清貴), Hiroshi Kawarada (川原田 洋)
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 175704 (2019)
https://doi.org/10.1063/1.5089793
Published: May 2019
View article titled, Advanced photo-assisted capacitance–voltage characterization of insulator/wide-bandgap semiconductor interface using super-bandgap illumination
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Journal Articles

Alternating current admittance of DNTT-based metal-insulator-semiconductor capacitors

T. Hayashi, N. Take, H. Tamura, T. Sekitani, T. Someya
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 093702 (2014)
https://doi.org/10.1063/1.4867521
Published: March 2014
View article titled, Alternating current admittance of DNTT-based metal-insulator-semiconductor capacitors
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Journal Articles

Components of channel capacitance in metal-insulator-semiconductor capacitors

Alex J. Grede, Sean L. Rommel
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 114510 (2013)
https://doi.org/10.1063/1.4821835
Published: September 2013
View article titled, Components of channel capacitance in metal-insulator-semiconductor capacitors
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Journal Articles

An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation

Dong Wang, Shuta Kojima, Keita Sakamoto, Keisuke Yamamoto, Hiroshi Nakashima
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 083707 (2012)
https://doi.org/10.1063/1.4759139
Published: October 2012
View article titled, An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO<sub>2</sub>/GeO<sub>2</sub> bilayer passivation
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Journal Articles

Relationship between magneto-capacitance-voltage characteristics and magnetoresistance of Au ∕ Cr 2 O 3 ∕ Cr 2 O 3 − x ∕ Fe Cr ∕ Ce O 2 ∕ Si metal-insulator-semiconductor capacitor

T. Yokota, S. Murata, S. Kito, M. Gomi
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 105, 07D905 (2009)
https://doi.org/10.1063/1.3059406
Published: February 2009
View article titled, Relationship between magneto-capacitance-voltage characteristics and magnetoresistance of Au ∕ Cr 2 O 3 ∕ Cr 2 O 3 − x ∕ Fe Cr ∕ Ce O 2 ∕ Si metal-insulator-semiconductor capacitor
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Journal Articles

Separating interface state response from parasitic effects in conductance measurements on organic metal-insulator-semiconductor capacitors

D. M. Taylor, N. Alves
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 054509 (2008)
https://doi.org/10.1063/1.2844435
Published: March 2008
View article titled, Separating interface state response from parasitic effects in conductance measurements on organic metal-insulator-semiconductor capacitors
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Journal Articles

From micro- to nanotransport properties in Pr 2 O 3 -based thin layers

P. Fiorenza, R. Lo Nigro, V. Raineri, S. Lombardo, R. G. Toro, G. Malandrino, I. L. Fragalà
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 044312 (2005)
https://doi.org/10.1063/1.2012514
Published: August 2005
View article titled, From micro- to nanotransport properties in Pr 2 O 3 -based thin layers
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Journal Articles

SrTa 2 O 6 thin films for high- K dielectric applications grown by chemical vapor deposition on different substrates

Stephan Regnery, Reji Thomas, Peter Ehrhart, Rainer Waser
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 073521 (2005)
https://doi.org/10.1063/1.1873033
Published: March 2005
View article titled, SrTa 2 O 6 thin films for high- K dielectric applications grown by chemical vapor deposition on different substrates
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Journal Articles

Metal‐insulator‐semiconductor capacitors on cleaved GaAs(110)

L. J. Huang, W. M. Lau, S. Ingrey, D. Landheer, J.‐P. Noël
Journal: Journal of Applied Physics
J. Appl. Phys. 76, 8192–8194 (1994)
https://doi.org/10.1063/1.358429
Published: December 1994
View article titled, Metal‐insulator‐semiconductor capacitors on cleaved GaAs(110)
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