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Journal Articles

Atomic layer deposition of HfO₂ as a charge-lean capping layer material for SiO₂-modulation acceptor doping of silicon

Somayeh Shams, Ingmar Ratschinski, Daniel Hiller

J. Appl. Phys. 137, 064301 (2025)

https://doi.org/10.1063/5.0256687

Published: February 2025

View article titled, Atomic layer deposition of HfO2 as a charge-lean capping layer material for SiO2-modulation acceptor doping of silicon

Journal Articles

Characterization of near-interface traps in thermally oxidized and NO-annealed SiO₂/4H-SiC metal-oxide-semiconductor capacitors by transient capacitance measurement

Haodong Fu, Qi Li, Dongyuan Zhai, Yuwei Wang, Jiwu Lu

J. Appl. Phys. 136, 245702 (2024)

https://doi.org/10.1063/5.0238784

Published: December 2024

View article titled, Characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors by transient capacitance measurement

Journal Articles

On the effect of polarization relaxation on dielectric breakdown

Serge Blonkowski

J. Appl. Phys. 136, 104102 (2024)

https://doi.org/10.1063/5.0217634

Published: September 2024

View article titled, On the effect of polarization relaxation on dielectric breakdown

Journal Articles

Theoretical study of the influence of GaO_x interfacial layer on the GaN/SiO₂ interface property

Shuto Hattori, Atsushi Oshiyama, Kenji Shiraishi

J. Appl. Phys. 135, 175303 (2024)

https://doi.org/10.1063/5.0204285

Published: May 2024

View article titled, Theoretical study of the influence of GaOx interfacial layer on the GaN/SiO2 interface property

Journal Articles

Optimizing interface properties of HfO₂/Si_0.73Ge_0.27 gate stacks through sulfur passivation and post-deposition annealing

Zhengyang Chen, Zhangsheng Lan, Yiran Lin, Tomonori Nishimura, Choonghyun Lee, Yi Zhao

J. Appl. Phys. 135, 125704 (2024)

https://doi.org/10.1063/5.0195430

Published: March 2024

View article titled, Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing

Journal Articles

Investigation of atomic layer deposition methods of Al₂O₃ on n-GaN

Liad Tadmor, Sofie S. T. Vandenbroucke, Eldad Bahat Treidel, Enrico Brusaterra, Paul Plate, Nicole Volkmer, Frank Brunner, Christophe Detavernier, Joachim Würfl, Oliver Hilt

J. Appl. Phys. 135, 085701 (2024)

https://doi.org/10.1063/5.0189543

Published: February 2024

View article titled, Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Journal Articles

Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors

B. D. Rummel, J. A. Cooper, D. T. Morisette, L. Yates, C. E. Glaser, A. T. Binder, K. Ramadoss, R. J. Kaplar

J. Appl. Phys. 134, 125302 (2023)

https://doi.org/10.1063/5.0158333

Published: September 2023

View article titled, Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors

Journal Articles

Interface and oxide trap states of SiO₂/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Shingo Ogawa, Hidetoshi Mizobata, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

J. Appl. Phys. 134, 095704 (2023)

https://doi.org/10.1063/5.0165894

Published: September 2023

View article titled, Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Journal Articles

Fluorine and related complexes in α-Al₂O₃

Minseok Choi, Chris G. Van de Walle

J. Appl. Phys. 134, 064501 (2023)

https://doi.org/10.1063/5.0161929

Published: August 2023

View article titled, Fluorine and related complexes in α-Al2O3

Journal Articles

Impact of band edge energy on interface traps and electrostatics of ultra-thin-body silicon-on-insulator devices

Nalin Vilochan Mishra, Aditya Sankar Medury

J. Appl. Phys. 133, 175702 (2023)

https://doi.org/10.1063/5.0147578

Published: May 2023

View article titled, Impact of band edge energy on interface traps and electrostatics of ultra-thin-body silicon-on-insulator devices

Includes: Supplementary data

Journal Articles

Atomic and electronic structures of interfaces between amorphous (Al₂O₃)_1−x(SiO₂)_x and GaN polar surfaces revealed by first-principles simulated annealing technique

Kenta Chokawa, Kenji Shiraishi, Atsushi Oshiyama

J. Appl. Phys. 133, 065301 (2023)

https://doi.org/10.1063/5.0132033

Published: February 2023

View article titled, Atomic and electronic structures of interfaces between amorphous (Al2O3)1−x(SiO2)x and GaN polar surfaces revealed by first-principles simulated annealing technique

Journal Articles

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

P. Fiorenza, L. Maiolo, G. Fortunato, M. Zielinski, F. La Via, F. Giannazzo, F. Roccaforte

J. Appl. Phys. 132, 245701 (2022)

https://doi.org/10.1063/5.0109278

Published: December 2022

View article titled, Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Journal Articles

Aluminum Frenkel defects cause hysteresis in Al₂O₃/AlGaN capacitors

I. Deretzis, P. Fiorenza, T. Fazio, E. Schilirò, R. Lo Nigro, G. Greco, G. Fisicaro, F. Roccaforte, A. La Magna

J. Appl. Phys. 132, 165105 (2022)

https://doi.org/10.1063/5.0112976

Published: October 2022

View article titled, Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors

Journal Articles

The impact of semiconductor surface states on vacuum field emission

Taeyoung Kim, Chandan Joishi, Pao-Chuan Shih, Tomás Palacios, Siddharth Rajan

J. Appl. Phys. 132, 165701 (2022)

https://doi.org/10.1063/5.0105657

Published: October 2022

View article titled, The impact of semiconductor surface states on vacuum field emission

Journal Articles

Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond

Atsushi Hiraiwa, Satoshi Okubo, Masahiko Ogura, Yu Fu, Hiroshi Kawarada

J. Appl. Phys. 132, 125702 (2022)

https://doi.org/10.1063/5.0104016

Published: September 2022

View article titled, Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond

Includes: Supplementary data

Journal Articles

Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods

Arnar M. Vidarsson, Jordan R. Nicholls, Daniel Haasmann, Sima Dimitrijev, Einar Ö. Sveinbjörnsson

J. Appl. Phys. 131, 215702 (2022)

https://doi.org/10.1063/5.0086974

Published: June 2022

View article titled, Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods

Journal Articles

Al₂O₃/InGaAs interface passivation by fluorine-containing anodic layers

M. S. Aksenov, N. A. Valisheva, D. V. Gorshkov, G. Y. Sidorov, I. P. Prosvirin, A. K. Gutakovskii

J. Appl. Phys. 131, 085301 (2022)

https://doi.org/10.1063/5.0078405

Published: February 2022

View article titled, Al2O3/InGaAs interface passivation by fluorine-containing anodic layers

Journal Articles

Van der Pol oscillator based on NbO₂ volatile memristor: A simulation analysis

Ziqing Luo, Yeheng Bo, S. M. Sadaf, Xinjun Liu

J. Appl. Phys. 131, 054501 (2022)

https://doi.org/10.1063/5.0073285

Published: February 2022

View article titled, Van der Pol oscillator based on NbO2 volatile memristor: A simulation analysis

Includes: Supplementary data

Journal Articles

Effects of high temperature annealing on the atomic layer deposited HfO₂/β-Ga₂O₃ ( 010 ) interface

Hannah N. Masten, Jamie D. Phillips, Rebecca L. Peterson

J. Appl. Phys. 131, 035106 (2022)

https://doi.org/10.1063/5.0070105

Published: January 2022

View article titled, Effects of high temperature annealing on the atomic layer deposited HfO2/β-Ga2O3 ( 010 ) interface

Journal Articles

Extraction of dipolar coupling constants from low-frequency electrically detected magnetic resonance and near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation

Elias B. Frantz, Nicholas J. Harmon, David J. Michalak, Eric M. Henry, Michael E. Flatté, Sean W. King, James S. Clarke, Patrick M. Lenahan

J. Appl. Phys. 130, 234401 (2021)

https://doi.org/10.1063/5.0075460

Published: December 2021

View article titled, Extraction of dipolar coupling constants from low-frequency electrically detected magnetic resonance and near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation

NARROW

Topics

Atomic layer deposition of HfO₂ as a charge-lean capping layer material for SiO₂-modulation acceptor doping of silicon

Characterization of near-interface traps in thermally oxidized and NO-annealed SiO₂/4H-SiC metal-oxide-semiconductor capacitors by transient capacitance measurement

On the effect of polarization relaxation on dielectric breakdown

Theoretical study of the influence of GaO_x interfacial layer on the GaN/SiO₂ interface property

Optimizing interface properties of HfO₂/Si_0.73Ge_0.27 gate stacks through sulfur passivation and post-deposition annealing

Investigation of atomic layer deposition methods of Al₂O₃ on n-GaN

Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors

Interface and oxide trap states of SiO₂/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Fluorine and related complexes in α-Al₂O₃

Impact of band edge energy on interface traps and electrostatics of ultra-thin-body silicon-on-insulator devices

Atomic and electronic structures of interfaces between amorphous (Al₂O₃)_1−x(SiO₂)_x and GaN polar surfaces revealed by first-principles simulated annealing technique

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Aluminum Frenkel defects cause hysteresis in Al₂O₃/AlGaN capacitors

The impact of semiconductor surface states on vacuum field emission

Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond

Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods

Al₂O₃/InGaAs interface passivation by fluorine-containing anodic layers

Van der Pol oscillator based on NbO₂ volatile memristor: A simulation analysis

Effects of high temperature annealing on the atomic layer deposited HfO₂/β-Ga₂O₃ ( 010 ) interface

Extraction of dipolar coupling constants from low-frequency electrically detected magnetic resonance and near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation

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