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Journal Articles

Emerging non-volatile memory (NVM) technologies based nano-oscillators: Materials to applications

Editor’s Pick
Manoj Kumar, Manan Suri
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 160701 (2024)
https://doi.org/10.1063/5.0230702
Published: October 2024
View article titled, Emerging non-volatile memory (NVM) technologies based nano-oscillators: Materials to applications
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Journal Articles

Nature of point defects in monolayer MoS2 and the MoS2/Au(111) heterojunction

Roozbeh Anvari, Wennie Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 174304 (2024)
https://doi.org/10.1063/5.0205981
Published: May 2024
View article titled, Nature of point defects in monolayer MoS<sub>2</sub> and the MoS<sub>2</sub>/Au(111) heterojunction
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Journal Articles

Tuning the conductance topology in solids

Victor Lopez-Richard, Rafael Schio Wengenroth Silva, Ovidiu Lipan, Fabian Hartmann
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 134901 (2023)
https://doi.org/10.1063/5.0142721
Published: April 2023
View article titled, Tuning the conductance topology in solids
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Journal Articles

Stochastic behavior of an interface-based memristive device

Sahitya Yarragolla, Torben Hemke, Jan Trieschmann, Finn Zahari, Hermann Kohlstedt, Thomas Mussenbrock
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 134304 (2022)
https://doi.org/10.1063/5.0084085
Published: April 2022
View article titled, Stochastic behavior of an interface-based memristive device
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Journal Articles

Addressing crosstalk in crossbar memory arrays with a resistive switching ZnO homojunction diode

Punya Mainali, Lyndon D. Bastatas, Elena Echeverria, Phadindra Wagle, Prasanna Sankaran, D. N. Mcilroy
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 205106 (2021)
https://doi.org/10.1063/5.0050564
Published: May 2021
View article titled, Addressing crosstalk in crossbar memory arrays with a resistive switching ZnO homojunction diode
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Journal Articles

Raman evidence for absence of phase transitions in negative differential resistance thin film devices of niobium dioxide

Ali Fakih, Onkar Shinde, Johan Biscaras, Abhay Shukla
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 084503 (2020)
https://doi.org/10.1063/1.5140543
Published: February 2020
View article titled, Raman evidence for absence of phase transitions in negative differential resistance thin film devices of niobium dioxide
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Journal Articles

A computational phase field study of conducting channel formation in dielectric thin films: A view toward the physical origins of resistive switching

John F. Sevic, Nobuhiko P. Kobayashi
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 065305 (2019)
https://doi.org/10.1063/1.5110911
Published: August 2019
View article titled, A computational phase field study of conducting channel formation in dielectric thin films: A view toward the physical origins of resistive switching
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Journal Articles

Preface to Special Topic: New Physics and Materials for Neuromorphic Computation

Julie Grollier, Supratik Guha, Hideo Ohno, Ivan K. Schuller
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 151801 (2018)
https://doi.org/10.1063/1.5063776
Published: October 2018
View article titled, Preface to Special Topic: New Physics and Materials for Neuromorphic Computation
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Journal Articles

Collective capacitive and memristive responses in random nanowire networks: Emergence of critical connectivity pathways

C. O’Callaghan, C. G. Rocha, F. Niosi, H. G. Manning, J. J. Boland, M. S. Ferreira
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 152118 (2018)
https://doi.org/10.1063/1.5037817
Published: October 2018
View article titled, Collective capacitive and memristive responses in random nanowire networks: Emergence of critical connectivity pathways
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Journal Articles

Development of a molecular gap-type atomic switch and its stochastic operation

Chisato Arima, Ayana Suzuki, Ai Kassai, Tohru Tsuruoka, Tsuyoshi Hasegawa
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 152114 (2018)
https://doi.org/10.1063/1.5037657
Published: September 2018
View article titled, Development of a molecular gap-type atomic switch and its stochastic operation
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Journal Articles

Integration of external electric fields in molecular dynamics simulation models for resistive switching devices

Editor’s Pick
T. Gergs, S. Dirkmann, T. Mussenbrock
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 245301 (2018)
https://doi.org/10.1063/1.5029877
Published: June 2018
View article titled, Integration of external electric fields in molecular dynamics simulation models for resistive switching devices
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Journal Articles

A SnS2-based photomemristor driven by sun

Mircea Dragoman, Mihail Batiri, Adrian Dinescu, Vladimir Ciobanu, Emil Rusu, Daniela Dragoman, Ion Tiginyanu
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 024506 (2018)
https://doi.org/10.1063/1.5001275
Published: January 2018
View article titled, A SnS<sub>2</sub>-based photomemristor driven by sun
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Journal Articles

Oxidation state and interfacial effects on oxygen vacancies in tantalum pentoxide

Robert J. Bondi, Matthew J. Marinella
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 085308 (2015)
https://doi.org/10.1063/1.4913206
Published: February 2015
View article titled, Oxidation state and interfacial effects on oxygen vacancies in tantalum pentoxide
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Journal Articles

A high-energy electron scattering study of the electronic structure and elemental composition of O-implanted Ta films used for the fabrication of memristor devices

M. Vos, P. L. Grande, S. K. Nandi, D. K. Venkatachalam, R. G. Elliman
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 073508 (2013)
https://doi.org/10.1063/1.4818524
Published: August 2013
View article titled, A high-energy electron scattering study of the electronic structure and elemental composition of O-implanted Ta films used for the fabrication of memristor devices
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