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Journal Articles

Characterization of hotspot formation in AlGaN/GaN HEMTs by probing Raman scattering through an optically transparent gate

Open Access
Anwarul Karim, Daniel C. Shoemaker, Tae Kyoung Kim, Joon Seop Kwak, Sukwon Choi
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 034507 (2025)
https://doi.org/10.1063/5.0260877
Published: July 2025
View article titled, Characterization of hotspot formation in AlGaN/GaN HEMTs by probing Raman scattering through an optically transparent gate
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Journal Articles

Ultrasensitive and broadband phototransistors with tellurium nanoribbon for polarized light detection

Open Access
Wenfeng Wang, Fuchun Wang, Shijing Wei, Xiaoguang Luo, Manzhang Xu, Yongjie Fan, Yurong Jiang, Xiaobo He, Jinpeng Xu
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 034302 (2025)
https://doi.org/10.1063/5.0272868
Published: July 2025
View article titled, Ultrasensitive and broadband phototransistors with tellurium nanoribbon for polarized light detection
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Journal Articles

Tunable metal-insulator phase transition in KNbO3/BaTiO3 superlattice via polarization switching

Open Access
Ningjie Ma, Gang Li, Wei Zhang, Yongguang Xiao, Minghua Tang
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 024102 (2025)
https://doi.org/10.1063/5.0259844
Published: July 2025
View article titled, Tunable metal-insulator phase transition in KNbO3/BaTiO3 superlattice via polarization switching
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Journal Articles

Near-infrared and red dual-band luminescence from Cu2−xSeyS1−y–CdS core–shell heterostructured quantum dots

Open Access
Shiqing Zhu, Wenjie Liu, Qingsong Yuan, Yimin Yang, Jiyang Fan
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 024301 (2025)
https://doi.org/10.1063/5.0265053
Published: July 2025
View article titled, Near-infrared and red dual-band luminescence from Cu2−xSeyS1−y–CdS core–shell heterostructured quantum dots
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Journal Articles

Study of In0.53Ga0.47As/InP interface in III–V heterostructures by coupling monoatomic argon sputtering and high-energy x-ray photoelectron spectroscopy

Open Access
G. Tsamo Tagougue, E. Martinez, M. Veillerot, V. Thoréton, M. Martin, T. Baron, G. Lefevre, S. Cavalaglio, F. Bassani
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 025301 (2025)
https://doi.org/10.1063/5.0270597
Published: July 2025
View article titled, Study of In0.53Ga0.47As/InP interface in III–V heterostructures by coupling monoatomic argon sputtering and high-energy x-ray photoelectron spectroscopy
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Journal Articles

Performance optimization and temperature effects of 63Ni/Si-based PN and PIN junction betavoltaic batteries

Open Access
Shitong He, Hougang Fan, Weikai Yuan, Yumin Liu, Xin Qu
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 025001 (2025)
https://doi.org/10.1063/5.0275938
Published: July 2025
View article titled, Performance optimization and temperature effects of 63Ni/Si-based PN and PIN junction betavoltaic batteries
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Journal Articles

Predicting efficient and stable inorganic photovoltaic materials using interpretable machine learning combined with DFT calculations based on band edge orbital engineering

Open Access
Ruo-Tong Chen, Zhihua Hu, Hong-Jian Feng
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 023101 (2025)
https://doi.org/10.1063/5.0267853
Published: July 2025
View article titled, Predicting efficient and stable inorganic photovoltaic materials using interpretable machine learning combined with DFT calculations based on band edge orbital engineering
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Journal Articles

Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing

Open Access
Agniva Paul, Gautham Kumar, Apu Das, Guilhem Larrieu, Sourav De
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 010701 (2025)
https://doi.org/10.1063/5.0278057
Published: July 2025
View article titled, Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing
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Journal Articles

Charge carrier extraction and recombination effects in GaInAs/GaAsP multi-quantum well solar cells

Open Access
Hasan Ahmed, Sethulakshmi J. Sudhakaran, Amani S. Almutairi, Sharmistha Khan, Vincent R. Whiteside, A. Petrou, Ryan M. France, Ian R. Sellers
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 013103 (2025)
https://doi.org/10.1063/5.0267677
Published: July 2025
View article titled, Charge carrier extraction and recombination effects in GaInAs/GaAsP multi-quantum well solar cells
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Journal Articles

Understanding extracted Richardson constant in Schottky diodes using Ni/GaN as a case study

Open Access
Tanmay Chavan, Donald J. Suntrup, III, Umesh K. Mishra
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 014501 (2025)
https://doi.org/10.1063/5.0270045
Published: July 2025
View article titled, Understanding extracted Richardson constant in Schottky diodes using Ni/GaN as a case study
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Journal Articles

Structural and electrical properties of (100) β-(ScxGa1−x)2O3/Ga2O3 heterojunctions

Open Access
Kazuki Koreishi, Takuto Soma, Akira Ohtomo
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 015302 (2025)
https://doi.org/10.1063/5.0277701
Published: July 2025
View article titled, Structural and electrical properties of (100) β-(ScxGa1−x)2O3/Ga2O3 heterojunctions
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Journal Articles

Enhanced photocatalytic performance of 2D/3D g-C3N4/MoS2 heterojunction for water remediation of real-world pollutants

Open Access
Ritu Kumari, Rakesh Kumar
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 014303 (2025)
https://doi.org/10.1063/5.0266899
Published: July 2025
View article titled, Enhanced photocatalytic performance of 2D/3D g-C3N4/MoS2 heterojunction for water remediation of real-world pollutants
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Journal Articles

Proposed controlled creation and manipulation of skyrmions with spin–orbit torque

Editor’s PickOpen Access
Yuto Uwabo, Ryo Fujimoto, Kimimaro Yanai, Masahito Mochizuki
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 013903 (2025)
https://doi.org/10.1063/5.0276879
Published: July 2025
View article titled, Proposed controlled creation and manipulation of skyrmions with spin–orbit torque
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Journal Articles

Sputtered ferroelectric aluminum scandium boron nitride (Al1−x−yBxScyN)/n-GaN heterostructures

FeaturedOpen Access
Chloe Skidmore, Josh Nordlander, John Hayden, Anthony Rice, Ramón Collazo, Zlatko Sitar, Jon-Paul Maria
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 014101 (2025)
https://doi.org/10.1063/5.0250995
Published: July 2025
View article titled, Sputtered ferroelectric aluminum scandium boron nitride (Al1−x−yBxScyN)/n-GaN heterostructures
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Journal Articles

Enhanced near-infrared photodetection via exciton–plasmon coupling in Ag nanoparticle decorated MoS2/Si-nanowire hybrid

Open Access
Mousumi Pramanik, Pritam Sinha, Achintya Singha, Kaustuv Das
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 013101 (2025)
https://doi.org/10.1063/5.0272057
Published: July 2025
View article titled, Enhanced near-infrared photodetection via exciton–plasmon coupling in Ag nanoparticle decorated MoS2/Si-nanowire hybrid
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Journal Articles

Oxygen vacancy driven resistive switching in SrTiO3/Si(001) heterostructures due to an electronic mechanism

Open Access
Patrick Kollias, Ryan Cottier, John Miracle, Samuel Cantrell, Nikoleta Theodoropoulou
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 244502 (2025)
https://doi.org/10.1063/5.0268554
Published: June 2025
View article titled, Oxygen vacancy driven resistive switching in SrTiO3/Si(001) heterostructures due to an electronic mechanism
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Journal Articles

Energy band alignment in MoS2/HfO2: Transfer-related artifacts and interfacial effects

Editor’s PickOpen Access
I. Shlyakhov, K. Iakoubovskii, D. Lin, I. Asselberghs, A. Gaur, G. Delie, V. Afanas'ev
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 244304 (2025)
https://doi.org/10.1063/5.0279067
Published: June 2025
View article titled, Energy band alignment in MoS2/HfO2: Transfer-related artifacts and interfacial effects
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Journal Articles

Acceleration theorem for low-dimensional electron systems with off-diagonal effective-mass components

Open Access
Nobuya Mori, Hajime Tanaka, Jo Okada
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 244302 (2025)
https://doi.org/10.1063/5.0273448
Published: June 2025
View article titled, Acceleration theorem for low-dimensional electron systems with off-diagonal effective-mass components
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Journal Articles

Plasmon-sensitized SiNWs/SnS2 heterostructures for high-sensitivity photodetector devices

Open Access
Sourav Das, Tamal Dey, Debabrata Mandal, Samit K Ray, Pallab Banerji, Amreesh Chandra, Rabaya Basori
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 233103 (2025)
https://doi.org/10.1063/5.0255348
Published: June 2025
View article titled, Plasmon-sensitized SiNWs/SnS2 heterostructures for high-sensitivity photodetector devices
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Journal Articles

Extending the Mott–Gurney law to one-dimensional nonplanar diodes using point transformations

Open Access
Allen L. Garner, N. R. Sree Harsha, Amanda M. Loveless
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 234501 (2025)
https://doi.org/10.1063/5.0276418
Published: June 2025
View article titled, Extending the Mott–Gurney law to one-dimensional nonplanar diodes using point transformations
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