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Journal Articles

A method to generate additional volatile states using single-domain ferroelectric field-effect transistor

Open Access
Abhishek Kumar, Shruti Mehrotra, Anand Bulusu, Avirup Dasgupta
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 134101 (2025)
https://doi.org/10.1063/5.0237955
Published: April 2025
View articletitled, A method to generate additional volatile states using single-domain ferroelectric field-effect transistor
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Journal Articles

A reduced mesh quality dependency simulation method for carrier transport simulation with density gradient quantum correction

Open Access
Yiqun Niu, Erping Li, Liang Tian, Zhufei Chu, Jian Wang, Yin-Shui Xia, Wenchao Chen
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 135701 (2025)
https://doi.org/10.1063/5.0249616
Published: April 2025
View articletitled, A reduced mesh quality dependency simulation method for carrier transport simulation with density gradient quantum correction
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Journal Articles

Optimization of HgCdTe nBn photodetectors utilizing a superlattice barrier

Open Access
Ryan Sellers, Peihong Man, Zahira El Khalidi, Zaheer Ahmad, Danial Zangeneh, Christoph Grein, Srini Krishnamurthy, Suk-Ryong Hahn, Thomas Mlynarski, Sivalingam Sivananthan
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 084502 (2025)
https://doi.org/10.1063/5.0245126
Published: February 2025
View articletitled, Optimization of HgCdTe nBn photodetectors utilizing a superlattice barrier
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Journal Articles

Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis

Open Access
Narendra Rai, Ritam Sarkar, Ashutosh Mahajan, Apurba Laha, Dipankar Saha, Swaroop Ganguly
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 164501 (2024)
https://doi.org/10.1063/5.0228156
Published: October 2024
View articletitled, Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis
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Journal Articles

Singlet fission photovoltaic cells as dual-wavelength laser power converters compatible with highly efficient solar cells

Open Access
Yasuhiko Takeda
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 043106 (2024)
https://doi.org/10.1063/5.0217612
Published: July 2024
View articletitled, Singlet fission photovoltaic cells as dual-wavelength laser power converters compatible with highly efficient solar cells
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Journal Articles

Carrier transport simulation methods for electronic devices with coexistence of quantum transport and diffusive transport

Open Access
Liang Tian, Wei E. I. Sha, Hao Xie, Dongxue Liu, Tian-Ge Sun, Yin-Shui Xia, Wenchao Chen
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 225703 (2024)
https://doi.org/10.1063/5.0209479
Published: June 2024
View articletitled, Carrier transport simulation methods for electronic devices with coexistence of quantum transport and diffusive transport
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Journal Articles

First-principles study of hydrogen- and oxygen-related complexes in ScN

FeaturedOpen Access
Andrew J. E. Rowberg, Sai Mu, Chris G. Van de Walle
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 125701 (2024)
https://doi.org/10.1063/5.0198147
Published: March 2024
View articletitled, First-principles study of hydrogen- and oxygen-related complexes in ScN
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Journal Articles

A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics

Open Access
Matthew A. Mircovich, John Kouvetakis, José Menéndez
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 124501 (2024)
https://doi.org/10.1063/5.0185557
Published: March 2024
View articletitled, A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics
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Journal Articles

A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling

Open Access
F. Lime, B. Iñiguez, A. Kloes
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 044501 (2024)
https://doi.org/10.1063/5.0188863
Published: January 2024
View articletitled, A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling
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Journal Articles

Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

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Narendra Rai, Ritam Sarkar, Ashutosh Mahajan, Apurba Laha, Dipankar Saha, Swaroop Ganguly
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 244503 (2023)
https://doi.org/10.1063/5.0176944
Published: December 2023
View articletitled, Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors
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Journal Articles

Rate equations description of the asymmetric double barrier electronic cooler

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A. Philippe, F. Carosella, X. Zhu, C. Salhani, K. Hirakawa, M. Bescond, R. Ferreira, G. Bastard
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 124305 (2023)
https://doi.org/10.1063/5.0155720
Published: September 2023
View articletitled, Rate equations description of the asymmetric double barrier electronic cooler
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Journal Articles

Au-MoS2 contacts: Quantum transport simulations using a continuum description

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Peter D. Reyntjens, Maarten L. Van de Put, Pranay Baikadi, Raseong Kim, Bart Sorée, William G. Vandenberghe
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 095702 (2023)
https://doi.org/10.1063/5.0162241
Published: September 2023
View articletitled, Au-MoS2 contacts: Quantum transport simulations using a continuum description
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Includes: Supplementary data
Journal Articles

Enhancing extraordinary magnetoresistance devices through geometric variations of the outer boundary

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Thierry Désiré Pomar, Adrianna Elżbieta Frąckowiak, Ricci Erlandsen, Dennis Valbjørn Christensen, Rasmus Bjørk
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 245704 (2023)
https://doi.org/10.1063/5.0154997
Published: June 2023
View articletitled, Enhancing extraordinary magnetoresistance devices through geometric variations of the outer boundary
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Journal Articles

Equivalent small-signal model of InP-based HEMTs with accurate radiation effects characterization

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H. Q. Yun, B. Mei, Y. B. Su, F. Yang, P. Ding, J. L. Zhang, S. H. Meng, C. Zhang, Y. Sun, H. M. Zhang, Z. Jin, Y. H. Zhong
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 204503 (2023)
https://doi.org/10.1063/5.0150647
Published: May 2023
View articletitled, Equivalent small-signal model of InP-based HEMTs with accurate radiation effects characterization
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Journal Articles

Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects

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Sheikh Ifatur Rahman, Zane Jamal-Eddine, Zhanbo Xia, Mohammad Awwad, Robert Armitage, Siddharth Rajan
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 235702 (2022)
https://doi.org/10.1063/5.0125684
Published: December 2022
View articletitled, Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects
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Journal Articles

Cryogenic VCSEL microwave-optical model for laser frequency response prediction and e–h recombination lifetime analysis

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D. Wu, W. Fu, H. Wu, M. Feng
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 223101 (2022)
https://doi.org/10.1063/5.0127575
Published: December 2022
View articletitled, Cryogenic VCSEL microwave-optical model for laser frequency response prediction and e–h recombination lifetime analysis
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Journal Articles

Generation–recombination noise in uniformly doped semiconductors with contacts of finite surface recombination velocities

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Chan Hyeong Park
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 214501 (2022)
https://doi.org/10.1063/5.0111954
Published: December 2022
View articletitled, Generation–recombination noise in uniformly doped semiconductors with contacts of finite surface recombination velocities
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Journal Articles

Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

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F. Jiménez-Molinos, G. Vinuesa, H. García, A. Tarre, A. Tamm, K. Kalam, K. Kukli, S. Dueñas, H. Castán, M. B. González, F. Campabadal, J. B. Roldán
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 194501 (2022)
https://doi.org/10.1063/5.0104890
Published: November 2022
View articletitled, Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction
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Journal Articles

Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes

Open Access
W. R. Wampler, A. M. Armstrong, G. Vizkelethy
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 095702 (2022)
https://doi.org/10.1063/5.0106905
Published: September 2022
View articletitled, Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes
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Journal Articles

Modeling of thin-film transistor device characteristics based on fundamental charge transport physics

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Xiao Wang, Ananth Dodabalapur
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 044501 (2022)
https://doi.org/10.1063/5.0083876
Published: July 2022
View articletitled, Modeling of thin-film transistor device characteristics based on fundamental charge transport physics
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Includes: Supplementary data