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Journal Articles

Singlet fission photovoltaic cells as dual-wavelength laser power converters compatible with highly efficient solar cells

Yasuhiko Takeda
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 043106 (2024)
https://doi.org/10.1063/5.0217612
Published: July 2024
View article titled, Singlet fission photovoltaic cells as dual-wavelength laser power converters compatible with highly efficient solar cells
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Journal Articles

Carrier transport simulation methods for electronic devices with coexistence of quantum transport and diffusive transport

Liang Tian, Wei E. I. Sha, Hao Xie, Dongxue Liu, Tian-Ge Sun, Yin-Shui Xia, Wenchao Chen
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 225703 (2024)
https://doi.org/10.1063/5.0209479
Published: June 2024
View article titled, Carrier transport simulation methods for electronic devices with coexistence of quantum transport and diffusive transport
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Journal Articles

A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics

Matthew A. Mircovich, John Kouvetakis, José Menéndez
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 124501 (2024)
https://doi.org/10.1063/5.0185557
Published: March 2024
View article titled, A practical theoretical model for Ge-like epitaxial diodes: I. The <em>I</em>–<em>V</em> characteristics
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Journal Articles

First-principles study of hydrogen- and oxygen-related complexes in ScN

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Andrew J. E. Rowberg, Sai Mu, Chris G. Van de Walle
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 125701 (2024)
https://doi.org/10.1063/5.0198147
Published: March 2024
View article titled, First-principles study of hydrogen- and oxygen-related complexes in ScN
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Journal Articles

Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

Narendra Rai, Ritam Sarkar, Ashutosh Mahajan, Apurba Laha, Dipankar Saha, Swaroop Ganguly
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 244503 (2023)
https://doi.org/10.1063/5.0176944
Published: December 2023
View article titled, Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors
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Journal Articles

Rate equations description of the asymmetric double barrier electronic cooler

A. Philippe, F. Carosella, X. Zhu, C. Salhani, K. Hirakawa, M. Bescond, R. Ferreira, G. Bastard
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 124305 (2023)
https://doi.org/10.1063/5.0155720
Published: September 2023
View article titled, Rate equations description of the asymmetric double barrier electronic cooler
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Journal Articles

Au-MoS2 contacts: Quantum transport simulations using a continuum description

Peter D. Reyntjens, Maarten L. Van de Put, Pranay Baikadi, Raseong Kim, Bart Sorée, William G. Vandenberghe
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 095702 (2023)
https://doi.org/10.1063/5.0162241
Published: September 2023
View article titled, Au-MoS<sub>2</sub> contacts: Quantum transport simulations using a continuum description
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Includes: Supplementary data
Journal Articles

Enhancing extraordinary magnetoresistance devices through geometric variations of the outer boundary

Thierry Désiré Pomar, Adrianna Elżbieta Frąckowiak, Ricci Erlandsen, Dennis Valbjørn Christensen, Rasmus Bjørk
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 245704 (2023)
https://doi.org/10.1063/5.0154997
Published: June 2023
View article titled, Enhancing extraordinary magnetoresistance devices through geometric variations of the outer boundary
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Journal Articles

Equivalent small-signal model of InP-based HEMTs with accurate radiation effects characterization

H. Q. Yun, B. Mei, Y. B. Su, F. Yang, P. Ding, J. L. Zhang, S. H. Meng, C. Zhang, Y. Sun, H. M. Zhang, Z. Jin, Y. H. Zhong
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 204503 (2023)
https://doi.org/10.1063/5.0150647
Published: May 2023
View article titled, Equivalent small-signal model of InP-based HEMTs with accurate radiation effects characterization
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Journal Articles

Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects

Sheikh Ifatur Rahman, Zane Jamal-Eddine, Zhanbo Xia, Mohammad Awwad, Robert Armitage, Siddharth Rajan
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 235702 (2022)
https://doi.org/10.1063/5.0125684
Published: December 2022
View article titled, Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects
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Journal Articles

Cryogenic VCSEL microwave-optical model for laser frequency response prediction and e–h recombination lifetime analysis

D. Wu, W. Fu, H. Wu, M. Feng
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 223101 (2022)
https://doi.org/10.1063/5.0127575
Published: December 2022
View article titled, Cryogenic VCSEL microwave-optical model for laser frequency response prediction and <em>e–h</em> recombination lifetime analysis
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Journal Articles

Generation–recombination noise in uniformly doped semiconductors with contacts of finite surface recombination velocities

Chan Hyeong Park
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 214501 (2022)
https://doi.org/10.1063/5.0111954
Published: December 2022
View article titled, Generation–recombination noise in uniformly doped semiconductors with contacts of finite surface recombination velocities
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Journal Articles

Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

F. Jiménez-Molinos, G. Vinuesa, H. García, A. Tarre, A. Tamm, K. Kalam, K. Kukli, S. Dueñas, H. Castán, M. B. González, F. Campabadal, J. B. Roldán
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 194501 (2022)
https://doi.org/10.1063/5.0104890
Published: November 2022
View article titled, Thermal effects on TiN/Ti/HfO<sub>2</sub>/Pt memristors charge conduction
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Journal Articles

Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes

W. R. Wampler, A. M. Armstrong, G. Vizkelethy
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 095702 (2022)
https://doi.org/10.1063/5.0106905
Published: September 2022
View article titled, Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes
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Journal Articles

Modeling of thin-film transistor device characteristics based on fundamental charge transport physics

Xiao Wang, Ananth Dodabalapur
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 044501 (2022)
https://doi.org/10.1063/5.0083876
Published: July 2022
View article titled, Modeling of thin-film transistor device characteristics based on fundamental charge transport physics
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Includes: Supplementary data
Journal Articles

Model for elimination of lifetime-limiting carbon vacancy defects in SiC by thermal treatment

Christoph Zechner, Masahiro Tanaka, Kenji Shimai, Nikolas Zographos, Sozo Kanie, Shinzo Tsuboi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 035702 (2022)
https://doi.org/10.1063/5.0094963
Published: July 2022
View article titled, Model for elimination of lifetime-limiting carbon vacancy defects in SiC by thermal treatment
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Journal Articles

Tight-binding band structure of β- and α-phase Ga2O3 and Al2O3

Y. Zhang, M. Liu, D. Jena, G. Khalsa
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 175702 (2022)
https://doi.org/10.1063/5.0074598
Published: May 2022
View article titled, Tight-binding band structure of <em>β</em>- and <em>α</em>-phase Ga<sub>2</sub>O<sub>3</sub> and Al<sub>2</sub>O<sub>3</sub>
Open the PDF for Tight-binding band structure of <em>β</em>- and <em>α</em>-phase Ga<sub>2</sub>O<sub>3</sub> and Al<sub>2</sub>O<sub>3</sub> in another window
Includes: Supplementary data
Journal Articles

A unified thermionic and thermionic-field emission (TE–TFE) model for ideal Schottky reverse-bias leakage current

W. Li, D. Jena, H. G. Xing
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 015702 (2022)
https://doi.org/10.1063/5.0070668
Published: January 2022
View article titled, A unified thermionic and thermionic-field emission (TE–TFE) model for ideal Schottky reverse-bias leakage current
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Journal Articles

Carrier transport and performance limit of semi-transparent photovoltaics: CuIn1−xGaxSe2 as a case study

Eymana Maria, Ajanta Saha, M. Ryyan Khan, Md. Abdullah Zubair, Md. Zunaid Baten, Redwan N. Sajjad
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 173106 (2021)
https://doi.org/10.1063/5.0063930
Published: November 2021
View article titled, Carrier transport and performance limit of semi-transparent photovoltaics: CuIn<sub>1−<em>x</em></sub>Ga<sub><em>x</em></sub>Se<sub>2</sub> as a case study
Open the PDF for Carrier transport and performance limit of semi-transparent photovoltaics: CuIn<sub>1−<em>x</em></sub>Ga<sub><em>x</em></sub>Se<sub>2</sub> as a case study in another window
Includes: Supplementary data
Journal Articles

Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes

Hongfeng Jia, Huabin Yu, Yang Kang, Zhongjie Ren, Muhammad Hunain Memon, Wei Guo, Haiding Sun, Shibing Long
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 133102 (2021)
https://doi.org/10.1063/5.0042712
Published: April 2021
View article titled, Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes
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