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Journal Articles

Acceleration theorem for low-dimensional electron systems with off-diagonal effective-mass components

Open Access
Nobuya Mori, Hajime Tanaka, Jo Okada
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 244302 (2025)
https://doi.org/10.1063/5.0273448
Published: June 2025
View article titled, Acceleration theorem for low-dimensional electron systems with off-diagonal effective-mass components
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Journal Articles

Discrete spectral Bayesian deconvolution for thermal parameter inversion in micro-nanoscale heterostructures

Open Access
Zhao-Yang Liu, Bing-Yang Cao
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 225102 (2025)
https://doi.org/10.1063/5.0272650
Published: June 2025
View article titled, Discrete spectral Bayesian deconvolution for thermal parameter inversion in micro-nanoscale heterostructures
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Journal Articles

A method to generate additional volatile states using single-domain ferroelectric field-effect transistor

Open Access
Abhishek Kumar, Shruti Mehrotra, Anand Bulusu, Avirup Dasgupta
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 134101 (2025)
https://doi.org/10.1063/5.0237955
Published: April 2025
View article titled, A method to generate additional volatile states using single-domain ferroelectric field-effect transistor
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Journal Articles

A combined 2ω/3ω method for the measurement of the in-plane thermal conductivity of thin films in multilayer stacks: Application to a silicon-on-insulator wafer

Open Access
F. Mazzelli, J. Paterson, F. Leroy, O. Bourgeois
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 015106 (2025)
https://doi.org/10.1063/5.0227482
Published: January 2025
View article titled, A combined 2ω/3ω method for the measurement of the in-plane thermal conductivity of thin films in multilayer stacks: Application to a silicon-on-insulator wafer
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Journal Articles

Band alignment characterizations of grafted GaAs/ ( 2 ¯ 01 ) Ga2O3 heterojunction via x-ray photoelectron spectroscopy

Open Access
Yi Lu, Jie Zhou, Vishal Khandelwal, Carolina Adamo, Patrick Marshall, Jiarui Gong, Yang Liu, Tien Khee Ng, Xiaohang Li, Boon S. Ooi, Vincent Gambin, Zhenqiang Ma
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 245301 (2024)
https://doi.org/10.1063/5.0240115
Published: December 2024
View article titled, Band alignment characterizations of grafted GaAs/ ( 2 ¯ 01 ) Ga2O3 heterojunction via x-ray photoelectron spectroscopy
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Journal Articles

Thermal inverse design for resistive micro-heaters

Open Access
Khoi Phuong Dao, Juejun Hu
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 225101 (2024)
https://doi.org/10.1063/5.0235526
Published: December 2024
View article titled, Thermal inverse design for resistive micro-heaters
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Journal Articles

Silicon photonics foundry fabricated, slow-light enhanced, low power thermal phase shifter

Open Access
Alexander Chen, Meng Zhang, Daniel Crowley, Nicholas Gangi, Amir Begović, Z. Rena Huang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 163101 (2024)
https://doi.org/10.1063/5.0219996
Published: October 2024
View article titled, Silicon photonics foundry fabricated, slow-light enhanced, low power thermal phase shifter
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Journal Articles

Selective excitation of photon modes in silicon microdisk resonator by deterministic positioning of GeSi quantum dots

Open Access
Vladimir A. Zinovyev, Margarita V. Stepikhova, Zhanna V. Smagina, Aigul F. Zinovieva, Alexey A. Bloshkin, Ekaterina E. Rodyakina, Mikhail S. Mikhailovskii, Mihail I. Petrov, Alexey V. Novikov
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 153103 (2024)
https://doi.org/10.1063/5.0236022
Published: October 2024
View article titled, Selective excitation of photon modes in silicon microdisk resonator by deterministic positioning of GeSi quantum dots
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Journal Articles

Si1−x−yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

Open Access
O. Steuer, M. Michailow, R. Hübner, K. Pyszniak, M. Turek, U. Kentsch, F. Ganss, M. M. Khan, L. Rebohle, S. Zhou, J. Knoch, M. Helm, G. Cuniberti, Y. M. Georgiev, S. Prucnal
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 065701 (2024)
https://doi.org/10.1063/5.0220639
Published: August 2024
View article titled, Si1−x−yGeySnx alloy formation by Sn ion implantation and flash lamp annealing
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Journal Articles

Structural changes in Ge1−xSnx and Si1−x−yGeySnx thin films on SOI substrates treated by pulse laser annealing

FeaturedOpen Access
O. Steuer, D. Schwarz, M. Oehme, F. Bärwolf, Y. Cheng, F. Ganss, R. Hübner, R. Heller, S. Zhou, M. Helm, G. Cuniberti, Y. M. Georgiev, S. Prucnal
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 055303 (2024)
https://doi.org/10.1063/5.0218703
Published: August 2024
View article titled, Structural changes in Ge1−xSnx and Si1−x−yGeySnx thin films on SOI substrates treated by pulse laser annealing
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Journal Articles

Modulation of post-fracture roughness with induced shear stress in the smart cut process

Open Access
Lucas Colonel, Q. Lomonaco, K. Abadie, L. G. Michaud, C. Morales, S. Moreau, F. Mazen, F. Fournel, D. Landru, F. Rieutord
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 045106 (2024)
https://doi.org/10.1063/5.0223114
Published: July 2024
View article titled, Modulation of post-fracture roughness with induced shear stress in the smart cut process
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Journal Articles

Improvement of linearity in trap-rich substrates for radio frequency applications: Which of donor and acceptor trap is the best?

Open Access
Justine Philippe, Jean-François Robillard, Daniel Gloria, Emmanuel Dubois
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 015702 (2024)
https://doi.org/10.1063/5.0205853
Published: July 2024
View article titled, Improvement of linearity in trap-rich substrates for radio frequency applications: Which of donor and acceptor trap is the best?
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Journal Articles

Valley splitting by extended zone effective mass approximation incorporating strain in silicon

Open Access
Jinichiro Noborisaka, Toshiaki Hayashi, Akira Fujiwara, Katsuhiko Nishiguchi
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 204302 (2024)
https://doi.org/10.1063/5.0173578
Published: May 2024
View article titled, Valley splitting by extended zone effective mass approximation incorporating strain in silicon
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Journal Articles

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Open Access
Kai Liu, Chong Wang, Kuo Zhang, Xiaohua Ma, Junchun Bai, Xuefeng Zheng, Ang Li, Yue Hao
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 144501 (2024)
https://doi.org/10.1063/5.0200487
Published: April 2024
View article titled, Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors
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Journal Articles

The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

FeaturedOpen Access
Matthias Passlack, Nujhat Tasneem, Chinsung Park, Prasanna Venkat Ravindran, Hang Chen, Dipjyoti Das, Shimeng Yu, Edward Chen, Jer-Fu Wang, Chih-Sheng Chang, Yu-Ming Lin, Iuliana Radu, Asif Khan
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 134501 (2024)
https://doi.org/10.1063/5.0180919
Published: April 2024
View article titled, The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors
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Journal Articles

Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing

Open Access
Zhengyang Chen, Zhangsheng Lan, Yiran Lin, Tomonori Nishimura, Choonghyun Lee, Yi Zhao
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 125704 (2024)
https://doi.org/10.1063/5.0195430
Published: March 2024
View article titled, Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing
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Journal Articles

Experimental characterization of a mode-localized acceleration sensor integrating electrostatically coupled resonators

Open Access
Ming Lyu, Jian Zhao, Najib Kacem, Rigumala Wu, Rongjian Sun
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 084502 (2024)
https://doi.org/10.1063/5.0188029
Published: February 2024
View article titled, Experimental characterization of a mode-localized acceleration sensor integrating electrostatically coupled resonators
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Journal Articles

A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling

Open Access
F. Lime, B. Iñiguez, A. Kloes
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 044501 (2024)
https://doi.org/10.1063/5.0188863
Published: January 2024
View article titled, A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling
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Journal Articles

Advances toward high-accuracy operation of tunable-barrier single-hole pumps in silicon

Open Access
Gento Yamahata, Akira Fujiwara
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 014502 (2024)
https://doi.org/10.1063/5.0179374
Published: January 2024
View article titled, Advances toward high-accuracy operation of tunable-barrier single-hole pumps in silicon
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Journal Articles

Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

Available to Purchase
Narendra Rai, Ritam Sarkar, Ashutosh Mahajan, Apurba Laha, Dipankar Saha, Swaroop Ganguly
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 244503 (2023)
https://doi.org/10.1063/5.0176944
Published: December 2023
View article titled, Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors
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