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Journal Articles

Analytical model and experimental validation of critical dependency of pGaN gated AlGaN/GaN enhancement-mode high electron mobility transistor characteristics on trap-assisted tunneling

Ranie S. Jeyakumar, J. J. James, Swaroop Ganguly, Dipankar Saha
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 155703 (2024)
https://doi.org/10.1063/5.0231721
Published: October 2024
View article titled, Analytical model and experimental validation of critical dependency of pGaN gated AlGaN/GaN enhancement-mode high electron mobility transistor characteristics on trap-assisted tunneling
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Journal Articles

The transition between the collision-dominated and ballistic electron transport regimes as the device length is reduced: A continuum analysis

Alireza Azimi, Mohammadreza Azimi, Michael S. Shur, Stephen K. O’Leary
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 035702 (2024)
https://doi.org/10.1063/5.0211046
Published: July 2024
View article titled, The transition between the collision-dominated and ballistic electron transport regimes as the device length is reduced: A continuum analysis
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Journal Articles

High-voltage AlGaN/GaN heterojunction lateral photoconductive semiconductor switch based on semi-insulating 4H-SiC substrate

Yangfan Li, Longfei Xiao, Chongbiao Luan, Yan Qin, Xun Sun, Huiru Sha, Jian Jiao, Xiufang Chen, Hongtao Li, Xiangang Xu
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 235702 (2024)
https://doi.org/10.1063/5.0197027
Published: June 2024
View article titled, High-voltage AlGaN/GaN heterojunction lateral photoconductive semiconductor switch based on semi-insulating 4H-SiC substrate
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Journal Articles

Field emission characteristics of AlGaN/GaN nanoscale lateral vacuum diodes

Editor’s Pick
Nathaniel Hernandez, Marc Cahay, Jonathan O’Mara, Jonathan Ludwick, Dennis E. Walker, Jr., Tyson Back, Harris Hall
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 204305 (2024)
https://doi.org/10.1063/5.0204235
Published: May 2024
View article titled, Field emission characteristics of AlGaN/GaN nanoscale lateral vacuum diodes
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Journal Articles

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Yang Liu, Chen Fu, Guangyuan Jiang, Guangyuan Zhang, Guang Yang, Yuanjie Lv, Zhaojun Lin
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 165703 (2023)
https://doi.org/10.1063/5.0172695
Published: October 2023
View article titled, Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors
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Journal Articles

Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures

S. Zoino, Ł. Borowik, B. Mohamad, E. Nowak, P. Kempisty
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 155304 (2023)
https://doi.org/10.1063/5.0169332
Published: October 2023
View article titled, <em>Ab initio</em> investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al<sub>2</sub>O<sub>3</sub> heterostructures
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Journal Articles

Thermal stability study of gallium nitride based magnetic field sensor

Satish Shetty, Andrian Kuchuk, Mohammad Zamani-Alavijeh, Ayesha Hassan, Savannah R. Eisner, Fernando Maia de Oliveira, Alexis Krone, John Harris, Josh P. Thompson, Nirosh M. Eldose, Yuriy I. Mazur, David Huitink, Debbie G. Senesky, H. Alan Mantooth, Gregory J. Salamo
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 145303 (2023)
https://doi.org/10.1063/5.0156013
Published: October 2023
View article titled, Thermal stability study of gallium nitride based magnetic field sensor
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Journal Articles

Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate

Kapil Narang, Rajesh K. Bag, Akhilesh Pandey, Anshu Goyal, Vikash K. Singh, Jaya Lohani, Brajesh S. Yadav, Sachin Saini, Preeti Bharti, Sandeep Dalal, M. V. G. Padmavati, Renu Tyagi, Rajendra Singh
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 145302 (2023)
https://doi.org/10.1063/5.0141724
Published: October 2023
View article titled, Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate
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Journal Articles

Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two Gp/ω peaks

Noboru Fukuhara, Fumimasa Horikiri, Taiki Yamamoto, Takenori Osada, Kenji Kasahara, Takayuki Inoue, Takashi Egawa
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 085702 (2023)
https://doi.org/10.1063/5.0127499
Published: February 2023
View article titled, Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two <em>Gp</em>/<em>ω</em> peaks
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Journal Articles

THz detection and amplification using plasmonic field effect transistors driven by DC drain currents

Editor’s Pick
Yuhui Zhang, Michael Shur
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 193102 (2022)
https://doi.org/10.1063/5.0128496
Published: November 2022
View article titled, THz detection and amplification using plasmonic field effect transistors driven by DC drain currents
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Journal Articles

Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact

Ling Yang, Hao Lu, Xuerui Niu, Meng Zhang, Chunzhou Shi, Longge Deng, Bin Hou, Minhan Mi, Mei Wu, Kai Cheng, Qing Zhu, Yang Lu, Ling Lv, Xiaohua Ma, Yue Hao
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 165703 (2022)
https://doi.org/10.1063/5.0106827
Published: October 2022
View article titled, Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact
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Journal Articles

The role of momentum conservation on the tunneling between a two-dimensional electron gas and self-assembled quantum dots

Daming Zhou, Jens Kerski, Andreas Beckel, Martin Geller, Axel Lorke, Arne Ludwig, Andreas D. Wieck, Xiaoshuang Chen, Wei Lu
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 064401 (2022)
https://doi.org/10.1063/5.0098561
Published: August 2022
View article titled, The role of momentum conservation on the tunneling between a two-dimensional electron gas and self-assembled quantum dots
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Journal Articles

Space charge waves in a two-dimensional electron gas

Peng Zhang, Patrick Wong, Yang Zhou, John D. Albrecht, Matt Hodek, David Smithe
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 144302 (2022)
https://doi.org/10.1063/5.0085104
Published: April 2022
View article titled, Space charge waves in a two-dimensional electron gas
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Journal Articles

Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template

Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, Farid Medjdoub, Philippe Ferrandis
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 124501 (2022)
https://doi.org/10.1063/5.0077107
Published: March 2022
View article titled, Transport properties of a thin GaN channel formed in an Al<sub>0.9</sub>Ga<sub>0.1</sub>N/GaN heterostructure grown on AlN/sapphire template
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Journal Articles

Correlation between sidewall surface states and off-state breakdown voltage of AlGaN/GaN HFETs

Mehrnegar Aghayan, Pouya Valizadeh
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 115703 (2021)
https://doi.org/10.1063/5.0060688
Published: September 2021
View article titled, Correlation between sidewall surface states and off-state breakdown voltage of AlGaN/GaN HFETs
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Journal Articles

An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure

Mei Ge, Yi Li, Youhua Zhu, Dunjun Chen, Zhiliang Wang, Shuxin Tan
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 035703 (2021)
https://doi.org/10.1063/5.0051274
Published: July 2021
View article titled, An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga<sub>2</sub>O<sub>3</sub>/p-GaN structure
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Journal Articles

Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures

Aqdas Fariza, Xiaoli Ji, Yaqi Gao, Junxue Ran, Junxi Wang, Tongbo Wei
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 165701 (2021)
https://doi.org/10.1063/5.0046560
Published: April 2021
View article titled, Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures
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Journal Articles

Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering

Kevin Goodman, Timothy Morgan, Pijush Kanti Ghosh, Robert Cooper, Samuel McHenry, Jeff Titus, Andrian V. Kuchuk, Matthew Halstead, Morgan Ware
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 084501 (2021)
https://doi.org/10.1063/5.0035190
Published: February 2021
View article titled, Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
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Journal Articles

A comprehensive model and numerical analysis of electron mobility in GaN-based high electron mobility transistors

I. Berdalovic, M. Poljak, T. Suligoj
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 064303 (2021)
https://doi.org/10.1063/5.0037228
Published: February 2021
View article titled, A comprehensive model and numerical analysis of electron mobility in GaN-based high electron mobility transistors
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Journal Articles

Repairing the surface of InAs-based topological heterostructures

S. J. Pauka, J. D. S. Witt, C. N. Allen, B. Harlech-Jones, A. Jouan, G. C. Gardner, S. Gronin, T. Wang, C. Thomas, M. J. Manfra, J. Gukelberger, J. Gamble, D. J. Reilly, M. C. Cassidy
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 114301 (2020)
https://doi.org/10.1063/5.0014361
Published: September 2020
View article titled, Repairing the surface of InAs-based topological heterostructures
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Includes: Supplementary data