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Journal Articles

Scalable approach for growing hexagonal boron nitride on silicon and its role in III-nitride van der Waals epitaxy

Muzafar Ahmad Rather, Shao-Hsiang Hsu, Chih-Chieh Lin, Yen-Huang Tien, Chien-Ting Wu, Tung-Yuan Yu, Kun-Lin Lin, Kun-Yu Lai, Jen-Inn Chyi
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 195301 (2024)
https://doi.org/10.1063/5.0230671
Published: November 2024
View article titled, Scalable approach for growing hexagonal boron nitride on silicon and its role in III-nitride van der Waals epitaxy
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Journal Articles

Impacts of single Shockley-type stacking faults on current conduction in 4H-SiC PiN diodes

Editor’s Pick
Satoshi Asada, Koichi Murata, Hidekazu Tsuchida
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 175702 (2024)
https://doi.org/10.1063/5.0238793
Published: November 2024
View article titled, Impacts of single Shockley-type stacking faults on current conduction in 4H-SiC PiN diodes
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Journal Articles

Tunable THz-whistle built on a two-dimensional electronic analog of a Helmholtz resonator

M. V. Cheremisin
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 163102 (2024)
https://doi.org/10.1063/5.0226347
Published: October 2024
View article titled, Tunable THz-whistle built on a two-dimensional electronic analog of a Helmholtz resonator
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Journal Articles

Dirac fermions and spin transport in the SrVO3/SrTiO3 quantum well

Featured
Yue Yu, L. L. Tao
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 154302 (2024)
https://doi.org/10.1063/5.0232407
Published: October 2024
View article titled, Dirac fermions and spin transport in the SrVO<sub>3</sub>/SrTiO<sub>3</sub> quantum well
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Journal Articles

InN/InAlN heterostructures for new generation of fast electronics

J. Kuzmik, R. Stoklas, S. Hasenöhrl, E. Dobročka, M. Kučera, P. Eliáš, F. Gucmann, D. Gregušová, Š. Haščík, A. Kaleta, M. P. Chauvat, S. Kret, P. Ruterana
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 245701 (2024)
https://doi.org/10.1063/5.0215108
Published: June 2024
View article titled, InN/InAlN heterostructures for new generation of fast electronics
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Journal Articles

Valley splitting by extended zone effective mass approximation incorporating strain in silicon

Jinichiro Noborisaka, Toshiaki Hayashi, Akira Fujiwara, Katsuhiko Nishiguchi
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 204302 (2024)
https://doi.org/10.1063/5.0173578
Published: May 2024
View article titled, Valley splitting by extended zone effective mass approximation incorporating strain in silicon
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Journal Articles

Laterally coupled photonic crystal surface emitting laser arrays

C. Gautam, M. Pan, Y. Chen, T. J. Rotter, G. Balakrishnan, W. Zhou
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 193108 (2024)
https://doi.org/10.1063/5.0205483
Published: May 2024
View article titled, Laterally coupled photonic crystal surface emitting laser arrays
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Journal Articles

Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor

Raman Kumar, Robert B. Kaufman, Fu-Chen Hsiao, Jean-Pierre Leburton, John M. Dallesasse
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 163103 (2024)
https://doi.org/10.1063/5.0190385
Published: April 2024
View article titled, Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor
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Journal Articles

Conduction-band engineering of polar nitride semiconductors with wurtzite ScAlN for near-infrared photonic devices

Govardan Gopakumar, Zain Ul Abdin, Rajendra Kumar, Brandon Dzuba, Trang Nguyen, Michael J. Manfra, Oana Malis
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 165701 (2024)
https://doi.org/10.1063/5.0195021
Published: April 2024
View article titled, Conduction-band engineering of polar nitride semiconductors with wurtzite ScAlN for near-infrared photonic devices
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Journal Articles

Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates

Masanori Nagase, Tokio Takahashi, Mitsuaki Shimizu
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 145704 (2024)
https://doi.org/10.1063/5.0198244
Published: April 2024
View article titled, Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates
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Journal Articles

Detection of BiGa hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfaces

Featured
Esperanza Luna, Janne Puustinen, Joonas Hilska, Mircea Guina
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 125303 (2024)
https://doi.org/10.1063/5.0195965
Published: March 2024
View article titled, Detection of Bi<sub>Ga</sub> hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfaces
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Journal Articles

Polarization-induced giant thermoelectric effect in monolayer MoS2

Ruhao Liu, Haifeng Lü, Xiaotao Zu, Yan Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 125104 (2024)
https://doi.org/10.1063/5.0194378
Published: March 2024
View article titled, Polarization-induced giant thermoelectric effect in monolayer MoS<sub>2</sub>
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Journal Articles

Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters

Chenxi Hu, Kathleen Kash, Hongping Zhao
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 023101 (2024)
https://doi.org/10.1063/5.0182716
Published: January 2024
View article titled, Design of AlGaN-Zn(Si,Ge)N<sub>2</sub> quantum wells for high-efficiency ultraviolet light emitters
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Journal Articles

Competition between built-in polarization and p–n junction field in III-nitride heterostructures

Henryk Turski, Mikolaj Chlipala, Ewelina Zdanowicz, Ernest Rogowicz, Grzegorz Muziol, Joanna Moneta, Szymon Grzanka, Marcin Kryśko, Marcin Syperek, Robert Kudrawiec, Czeslaw Skierbiszewski
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 243105 (2023)
https://doi.org/10.1063/5.0177614
Published: December 2023
View article titled, Competition between built-in polarization and p–n junction field in III-nitride heterostructures
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Journal Articles

Polarization-matching and carrier confinement in III-nitride deep-ultraviolet light-emitting diodes

R. R. Aguileta-Vazquez, Z. Liu, F. AlQatari, Y. Lu, X. Tang, P. A. Miranda-Cortez, X. Li
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 184501 (2023)
https://doi.org/10.1063/5.0166175
Published: November 2023
View article titled, Polarization-matching and carrier confinement in III-nitride deep-ultraviolet light-emitting diodes
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Includes: Supplementary data
Journal Articles

Fast low bias pulsed DC transport measurements for the investigation of low temperature transport effects in semiconductor devices

C. Fuchs, M. Hofer, L. Fürst, S. Shamim, T. Kießling, H. Buhmann, L. W. Molenkamp
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 175702 (2023)
https://doi.org/10.1063/5.0170478
Published: November 2023
View article titled, Fast low bias pulsed DC transport measurements for the investigation of low temperature transport effects in semiconductor devices
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Journal Articles

First-principles investigation of the effects of excess carriers on the polytype stability and stacking fault energies of SiC

Hiroki Sakakima, Satoshi Izumi
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 155103 (2023)
https://doi.org/10.1063/5.0164316
Published: October 2023
View article titled, First-principles investigation of the effects of excess carriers on the polytype stability and stacking fault energies of SiC
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Journal Articles

Analytical model for the injection recombination current in quantum well micro-light emitting diodes

A. Tsormpatzoglou, T. A. Oproglidis, I. Pappas, C. A. Dimitriadis
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 154501 (2023)
https://doi.org/10.1063/5.0171766
Published: October 2023
View article titled, Analytical model for the injection recombination current in quantum well micro-light emitting diodes
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Journal Articles

Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation

Yihong Ji, Martin Frentrup, Xiaotian Zhang, Jakub Pongrácz, Simon M. Fairclough, Yingjun Liu, Tongtong Zhu, Rachel A. Oliver
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 145102 (2023)
https://doi.org/10.1063/5.0165066
Published: October 2023
View article titled, Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation
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Includes: Supplementary data
Journal Articles

Optimal parameters of HgTe/CdHgTe multiple quantum well structures for generating two-dimensional plasmon-phonons

V. Ya. Aleshkin, A. O. Rudakov, S. V. Morozov
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 133101 (2023)
https://doi.org/10.1063/5.0160727
Published: October 2023
View article titled, Optimal parameters of HgTe/CdHgTe multiple quantum well structures for generating two-dimensional plasmon-phonons
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