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Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Kai Liu, Chong Wang, Kuo Zhang, Xiaohua Ma, Junchun Bai, Xuefeng Zheng, Ang Li, Yue Hao

J. Appl. Phys. 135, 144501 (2024)

https://doi.org/10.1063/5.0200487

Published: April 2024

View article titled, Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Journal Articles

The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Matthias Passlack, Nujhat Tasneem, Chinsung Park, Prasanna Venkat Ravindran, Hang Chen, Dipjyoti Das, Shimeng Yu, Edward Chen, Jer-Fu Wang, Chih-Sheng Chang, Yu-Ming Lin, Iuliana Radu, Asif Khan

J. Appl. Phys. 135, 134501 (2024)

https://doi.org/10.1063/5.0180919

Published: April 2024

View article titled, The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Journal Articles

Optimizing interface properties of HfO₂/Si_0.73Ge_0.27 gate stacks through sulfur passivation and post-deposition annealing

Zhengyang Chen, Zhangsheng Lan, Yiran Lin, Tomonori Nishimura, Choonghyun Lee, Yi Zhao

J. Appl. Phys. 135, 125704 (2024)

https://doi.org/10.1063/5.0195430

Published: March 2024

View article titled, Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing

Journal Articles

Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

Narendra Rai, Ritam Sarkar, Ashutosh Mahajan, Apurba Laha, Dipankar Saha, Swaroop Ganguly

J. Appl. Phys. 134, 244503 (2023)

https://doi.org/10.1063/5.0176944

Published: December 2023

View article titled, Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

Journal Articles

Density functional analysis of oxide dipole layer voltage shifts in high κ/metal gate stacks

Ruyue Cao, Zhaofu Zhang, Yuzheng Guo, John Robertson

J. Appl. Phys. 134, 085302 (2023)

https://doi.org/10.1063/5.0154134

Published: August 2023

View article titled, Density functional analysis of oxide dipole layer voltage shifts in high κ/metal gate stacks

Journal Articles

Doped HfO₂-based ferroelectric-aided charge-trapping effect in MFIS gate stack of FeFET

Bao Zhang, Peizhen Hong, Jingwen Hou, Zongliang Huo, Tianchun Ye

J. Appl. Phys. 133, 164103 (2023)

https://doi.org/10.1063/5.0141082

Published: April 2023

View article titled, Doped HfO2-based ferroelectric-aided charge-trapping effect in MFIS gate stack of FeFET

Includes: Supplementary data

Journal Articles

First-principles study of oxygen vacancy defects in orthorhombic Hf_0.5Zr_0.5O₂/SiO₂/Si gate stack

Junshuai Chai, Hao Xu, Jinjuan Xiang, Yuanyuan Zhang, Lixing Zhou, Shujing Zhao, Fengbin Tian, Jiahui Duan, Kai Han, Xiaolei Wang, Jun Luo, Wenwu Wang, Tianchun Ye, Yuzheng Guo

J. Appl. Phys. 132, 105301 (2022)

https://doi.org/10.1063/5.0106750

Published: September 2022

View article titled, First-principles study of oxygen vacancy defects in orthorhombic Hf0.5Zr0.5O2/SiO2/Si gate stack

Journal Articles

Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf_0.5Zr_0.5O₂/SiO_x/Si (MFIS) gate structure

Jiahui Duan, Hao Xu, Shujing Zhao, Fengbin Tian, Jinjuan Xiang, Kai Han, Tingting Li, Xiaolei Wang, Wenwu Wang, Tianchun Ye

J. Appl. Phys. 131, 134102 (2022)

https://doi.org/10.1063/5.0084816

Published: April 2022

View article titled, Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) gate structure

Journal Articles

Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors

Sayak Dutta Gupta, Vipin Joshi, Rajarshi Roy Chaudhuri, Mayank Shrivastava

J. Appl. Phys. 130, 015701 (2021)

https://doi.org/10.1063/5.0053982

Published: July 2021

View article titled, Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors

Journal Articles

Positive bias temperature instability of HfO₂-based gate stacks at reduced thermal budget for future CMOS technologies

D. Claes, J. Franco, N. Collaert, D. Linten, M. Heyns

J. Appl. Phys. 128, 104101 (2020)

https://doi.org/10.1063/5.0006110

Published: September 2020

View article titled, Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies

Journal Articles

Metal–oxide–semiconductor interface properties of TiN/Y₂O₃/Si_0.62Ge_0.38 gate stacks with high temperature post-metallization annealing

Tsung-En Lee, Mengnan Ke, Kimihiko Kato, Mitsuru Takenaka, Shinichi Takagi

J. Appl. Phys. 127, 185705 (2020)

https://doi.org/10.1063/1.5144198

Published: May 2020

View article titled, Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing

Journal Articles

Erratum: “Border trap evaluation for SiO₂/GeO₂/Ge gate stacks using deep-level transient spectroscopy” [J. Appl. Phys. 124, 205303 (2018)]

Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

J. Appl. Phys. 127, 169901 (2020)

https://doi.org/10.1063/5.0009800

Published: April 2020

View article titled, Erratum: “Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy” [J. Appl. Phys. 124, 205303 (2018)]

Journal Articles

Reaction of GeO₂ with Ge and crystallization of GeO₂ on Ge

Min Xie, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

J. Appl. Phys. 127, 024101 (2020)

https://doi.org/10.1063/1.5120886

Published: January 2020

View article titled, Reaction of GeO2 with Ge and crystallization of GeO2 on Ge

Journal Articles

Systematic investigation of the threshold voltage modulation of AlGaN/GaN Schottky-gate Fin-HEMTs

Li-Cheng Chang, Jhih-Hao Lin, Cheng-Jia Dai, Ming Yang, Yi-Hong Jiang, Yuh-Renn Wu, Chao-Hsin Wu

J. Appl. Phys. 125, 094502 (2019)

https://doi.org/10.1063/1.5085275

Published: March 2019

View article titled, Systematic investigation of the threshold voltage modulation of AlGaN/GaN Schottky-gate Fin-HEMTs

Journal Articles

Anomalous temperature dependence of Al₂O₃/SiO₂ and Y₂O₃/SiO₂ interface dipole layer strengths

Siri Nittayakasetwat, Koji Kita

J. Appl. Phys. 125, 084105 (2019)

https://doi.org/10.1063/1.5079926

Published: February 2019

View article titled, Anomalous temperature dependence of Al2O3/SiO2 and Y2O3/SiO2 interface dipole layer strengths

Journal Articles

The role of the disordered H f O 2 network in the high-κ n -MOSFET shallow electron trapping

Chenjie Gu, Canliang Zhou, Diing Shenp Ang, Xin Ju, Renyuan Gu, Tianli Duan

J. Appl. Phys. 125, 025705 (2019)

https://doi.org/10.1063/1.5059381

Published: January 2019

View article titled, The role of the disordered H f O 2 network in the high-κ n -MOSFET shallow electron trapping

Journal Articles

Border trap evaluation for SiO₂/GeO₂/Ge gate stacks using deep-level transient spectroscopy

Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

J. Appl. Phys. 124, 205303 (2018)

https://doi.org/10.1063/1.5055291

Published: November 2018

View article titled, Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy

Journal Articles

Study of the oxidation at the Al₂O₃/GaSb interface after NH₄OH and HCl/(NH₄)₂S passivations and O₂ plasma post atomic layer deposition process

Y. Lechaux, A. B. Fadjie-Djomkam, M. Pastorek, X. Wallart, S. Bollaert, N. Wichmann

J. Appl. Phys. 124, 175302 (2018)

https://doi.org/10.1063/1.5049571

Published: November 2018

View article titled, Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process

Journal Articles

Properties of ALD Ta_xN_y films as a barrier to aluminum in work function metal stacks

H. F. W. Dekkers, L.-Å. Ragnarsson, T. Schram, N. Horiguchi

J. Appl. Phys. 124, 165307 (2018)

https://doi.org/10.1063/1.5040840

Published: October 2018

View article titled, Properties of ALD TaxNy films as a barrier to aluminum in work function metal stacks

Includes: Supplementary data

Journal Articles

Bias temperature instability model using dynamic defect potential for predicting CMOS aging

Runchen Fang, Ian Livingston, Ivan Sanchez Esqueda, Michael Kozicki, Hugh Barnaby

J. Appl. Phys. 123, 225701 (2018)

https://doi.org/10.1063/1.5027856

Published: June 2018

View article titled, Bias temperature instability model using dynamic defect potential for predicting CMOS aging

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Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Optimizing interface properties of HfO₂/Si_0.73Ge_0.27 gate stacks through sulfur passivation and post-deposition annealing

Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

Density functional analysis of oxide dipole layer voltage shifts in high κ/metal gate stacks

Doped HfO₂-based ferroelectric-aided charge-trapping effect in MFIS gate stack of FeFET

First-principles study of oxygen vacancy defects in orthorhombic Hf_0.5Zr_0.5O₂/SiO₂/Si gate stack

Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf_0.5Zr_0.5O₂/SiO_x/Si (MFIS) gate structure

Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors

Positive bias temperature instability of HfO₂-based gate stacks at reduced thermal budget for future CMOS technologies

Metal–oxide–semiconductor interface properties of TiN/Y₂O₃/Si_0.62Ge_0.38 gate stacks with high temperature post-metallization annealing

Erratum: “Border trap evaluation for SiO₂/GeO₂/Ge gate stacks using deep-level transient spectroscopy” [J. Appl. Phys. 124, 205303 (2018)]

Reaction of GeO₂ with Ge and crystallization of GeO₂ on Ge

Systematic investigation of the threshold voltage modulation of AlGaN/GaN Schottky-gate Fin-HEMTs

Anomalous temperature dependence of Al₂O₃/SiO₂ and Y₂O₃/SiO₂ interface dipole layer strengths

The role of the disordered H f O 2 network in the high-κ n -MOSFET shallow electron trapping

Border trap evaluation for SiO₂/GeO₂/Ge gate stacks using deep-level transient spectroscopy

Study of the oxidation at the Al₂O₃/GaSb interface after NH₄OH and HCl/(NH₄)₂S passivations and O₂ plasma post atomic layer deposition process

Properties of ALD Ta_xN_y films as a barrier to aluminum in work function metal stacks

Bias temperature instability model using dynamic defect potential for predicting CMOS aging

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