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Journal Articles

Impact ionization coefficients and critical electric field in GaN

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Takuya Maeda, Tetsuo Narita, Shinji Yamada, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita, Jun Suda
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 185702 (2021)
https://doi.org/10.1063/5.0050793
Published: May 2021
View article titled, Impact ionization coefficients and critical electric field in GaN
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Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization

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Yury Turkulets, Ilan Shalish
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 075102 (2018)
https://doi.org/10.1063/1.5038800
Published: August 2018
View article titled, Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization
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Includes: Supplementary data
Journal Articles

Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes

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Xiaodong Wang, Weida Hu, Ming Pan, Liwei Hou, Wei Xie, Jintong Xu, Xiangyang Li, Xiaoshuang Chen, Wei Lu
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 013103 (2014)
https://doi.org/10.1063/1.4861148
Published: January 2014
View article titled, Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes
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Journal Articles

Influence of AlN layer on electric field distribution in GaN/AlGaN/GaN transistor heterostructures

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M. Gladysiewicz, R. Kudrawiec, J. Misiewicz, K. Klosek, M. Sobanska, J. Borysiuk, Z. R. Zytkiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 163527 (2013)
https://doi.org/10.1063/1.4827376
Published: October 2013
View article titled, Influence of AlN layer on electric field distribution in GaN/AlGaN/GaN transistor heterostructures
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Journal Articles

Optoelectronic response calculations in the framework of k · p coupled to non-equilibrium Green's functions for one-dimensional systems in the ballistic limit

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Andrei Buin, Amit Verma, Simarjeet Saini
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 033111 (2013)
https://doi.org/10.1063/1.4815949
Published: July 2013
View article titled, Optoelectronic response calculations in the framework of k · p coupled to non-equilibrium Green's functions for one-dimensional systems in the ballistic limit
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Journal Articles

Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures

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R. Kudrawiec, H. P. Nair, M. Latkowska, J. Misiewicz, S. R. Bank, W. Walukiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 123513 (2012)
https://doi.org/10.1063/1.4770413
Published: December 2012
View article titled, Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures
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Journal Articles

Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method

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R. Kudrawiec, M. Rudziński, M. Gladysiewicz, L. Janicki, P. R. Hageman, W. Strupiński, J. Misiewicz, R. Kucharski, M. Zając, R. Doradziński, R. Dwiliński
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 063528 (2011)
https://doi.org/10.1063/1.3560537
Published: March 2011
View article titled, Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method
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Journal Articles

Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells

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R. Kudrawiec, M. Gladysiewicz, A. Dussaigne, H. Teisseyre, M. Boćkowski, I. Grzegory, T. Suski, J. Misiewicz, N. Grandjean
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 026103 (2011)
https://doi.org/10.1063/1.3533417
Published: January 2011
View article titled, Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells
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Journal Articles

Optical characterization of thin epitaxial GaAs films on Ge substrates

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J. D. Wu, Y. S. Huang, G. Brammertz, K. K. Tiong
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 023505 (2009)
https://doi.org/10.1063/1.3173282
Published: July 2009
View article titled, Optical characterization of thin epitaxial GaAs films on Ge substrates
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Journal Articles

Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer

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R. Kudrawiec, B. Paszkiewicz, M. Motyka, J. Misiewicz, J. Derluyn, A. Lorenz, K. Cheng, J. Das, M. Germain
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 096108 (2008)
https://doi.org/10.1063/1.3009956
Published: November 2008
View article titled, Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer
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Journal Articles

On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%–32%

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R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, James S. Harris, M. Motyka, J. Misiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 033526 (2008)
https://doi.org/10.1063/1.2961330
Published: August 2008
View article titled, On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%–32%
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Journal Articles

Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells

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R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, James S. Harris, M. Motyka, J. Misiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 113501 (2007)
https://doi.org/10.1063/1.2817258
Published: December 2007
View article titled, Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells
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Journal Articles

Microscopic electroabsorption line shape analysis for Ga ( AsSb ) ∕ GaAs heterostructures

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C. Bückers, G. Blume, A. Thränhardt, C. Schlichenmaier, P. J. Klar, G. Weiser, S. W. Koch, J. Hader, J. V. Moloney, T. J. C. Hosea, S. J. Sweeney, J.-B. Wang, S. R. Johnson, Y.-H. Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 033118 (2007)
https://doi.org/10.1063/1.2433715
Published: February 2007
View article titled, Microscopic electroabsorption line shape analysis for Ga ( AsSb ) ∕ GaAs heterostructures
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Journal Articles

Photoreflectance study of GaAsSb ∕ InP heterostructures

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H. Chouaib, C. Bru-Chevallier, G. Guillot, H. Lahreche, P. Bove
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 123524 (2005)
https://doi.org/10.1063/1.2142099
Published: December 2005
View article titled, Photoreflectance study of GaAsSb ∕ InP heterostructures
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Journal Articles

Superlattice in an interminiband resonance ac field

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V. I. Litvinov, A. Manasson
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 043505 (2005)
https://doi.org/10.1063/1.2010619
Published: August 2005
View article titled, Superlattice in an interminiband resonance ac field
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Journal Articles

Nondestructive determination of layers producing Franz-Keldysh oscillations appearing in photoreflectance spectra of heterojunction bipolar transistor structures based on their line-shape analysis

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Hideo Takeuchi, Yoshitsugu Yamamoto, Masaaki Nakayama
Journal: Journal of Applied Physics
J. Appl. Phys. 96, 1967–1974 (2004)
https://doi.org/10.1063/1.1766416
Published: August 2004
View article titled, Nondestructive determination of layers producing Franz-Keldysh oscillations appearing in photoreflectance spectra of heterojunction bipolar transistor structures based on their line-shape analysis
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Journal Articles

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance

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S. R. Kurtz, A. A. Allerman, D. D. Koleske, A. G. Baca, R. D. Briggs
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 1888–1894 (2004)
https://doi.org/10.1063/1.1639955
Published: February 2004
View article titled, Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance
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Journal Articles

Electroreflectance of surface-intrinsic- n + -type-doped GaAs by using a large modulating field

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Y. C. Lin, K. Q. Wang, D. P. Wang, K. F. Huang, T. C. Huang
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 7210–7214 (2003)
https://doi.org/10.1063/1.1625098
Published: December 2003
View article titled, Electroreflectance of surface-intrinsic- n + -type-doped GaAs by using a large modulating field
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Journal Articles

Optical determination of the dopant concentration in the δ-doping layer

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Aneta Drabińska, A. Babiński, T. Tomaszewicz, R. Bozek, J. M. Baranowski
Journal: Journal of Applied Physics
J. Appl. Phys. 92, 163–167 (2002)
https://doi.org/10.1063/1.1484226
Published: July 2002
View article titled, Optical determination of the dopant concentration in the δ-doping layer
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Journal Articles

Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure

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C. J. Lin, Y. S. Huang, N. Y. Li, P. W. Li, K. K. Tiong
Journal: Journal of Applied Physics
J. Appl. Phys. 90, 4565–4569 (2001)
https://doi.org/10.1063/1.1405823
Published: November 2001
View article titled, Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure
Open the PDF for Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure in another window