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Journal Articles

Efficient characterization of a double quantum dot using the Hubbard model

Will Wang, John Dean Rooney, Hongwen Jiang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 044401 (2024)
https://doi.org/10.1063/5.0215622
Published: July 2024
View article titled, Efficient characterization of a double quantum dot using the Hubbard model
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Journal Articles

Magnetoelectrics enables large power delivery to mm-sized wireless bioelectronics

Wonjune Kim, C. Anne Tuppen, Fatima Alrashdan, Amanda Singer, Rachel Weirnick, Jacob T. Robinson
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 094103 (2023)
https://doi.org/10.1063/5.0156015
Published: September 2023
View article titled, Magnetoelectrics enables large power delivery to mm-sized wireless bioelectronics
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Includes: Supplementary data
Journal Articles

Understanding the signal amplification in dual-gate FET-based biosensors

Jae-Hyuk Ahn, Bongsik Choi, Sung-Jin Choi
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 184502 (2020)
https://doi.org/10.1063/5.0010136
Published: November 2020
View article titled, Understanding the signal amplification in dual-gate FET-based biosensors
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Includes: Supplementary data
Journal Articles

Power matching to pulsed inductively coupled plasmas

Chenhui Qu, Steven J. Lanham, Steven C. Shannon, Sang Ki Nam, Mark J. Kushner
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 133302 (2020)
https://doi.org/10.1063/5.0002522
Published: April 2020
View article titled, Power matching to pulsed inductively coupled plasmas
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Journal Articles

Investigation of voltage effect on reaction mechanisms in capacitively coupled N2 discharges

Ying-Shuang Liang, Yong-Xin Liu, Yu-Ru Zhang, You-Nian Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 133301 (2020)
https://doi.org/10.1063/1.5143821
Published: April 2020
View article titled, Investigation of voltage effect on reaction mechanisms in capacitively coupled N<sub>2</sub> discharges
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Journal Articles

Results and model for single-gate ratchet charge pumping

Roy Murray, Justin K. Perron, M. D. Stewart, Jr., Antonio L. Levy, Patrick See, Stephen P. Giblin, Jonathan D. Fletcher, Masaya Kataoka, Neil M. Zimmerman
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 094301 (2020)
https://doi.org/10.1063/1.5133967
Published: March 2020
View article titled, Results and model for single-gate ratchet charge pumping
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Journal Articles

A unified static-dynamic analytic model for ultra-scaled III-nitride high electron mobility transistors

Kexin Li, Shaloo Rakheja
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 134503 (2019)
https://doi.org/10.1063/1.5064385
Published: April 2019
View article titled, A unified static-dynamic analytic model for ultra-scaled III-nitride high electron mobility transistors
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Journal Articles

Experimental investigation of the electron impact excitation behavior in pulse-modulated radio frequency Ar/O 2 inductively coupled plasma

Chan Xue, Fei Gao, De-Qi Wen, You-Nian Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 023303 (2019)
https://doi.org/10.1063/1.5079585
Published: January 2019
View article titled, Experimental investigation of the electron impact excitation behavior in pulse-modulated radio frequency Ar/O 2 inductively coupled plasma
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Journal Articles

All-printed, flexible, reconfigurable frequency selective surfaces

Mahdi Haghzadeh, Alkim Akyurtlu
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 184901 (2016)
https://doi.org/10.1063/1.4967169
Published: November 2016
View article titled, All-printed, flexible, reconfigurable frequency selective surfaces
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Journal Articles

Inkjet printed organic electrochemical transistors with highly conducting polymer electrolytes

Mónica Afonso, Jorge Morgado, Luís Alcácer
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 165502 (2016)
https://doi.org/10.1063/1.4966651
Published: October 2016
View article titled, Inkjet printed organic electrochemical transistors with highly conducting polymer electrolytes
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Includes: Supplementary data
Journal Articles

Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors

H. Yacoub, D. Fahle, M. Eickelkamp, A. Wille, C. Mauder, M. Heuken, H. Kalisch, A. Vescan
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 135704 (2016)
https://doi.org/10.1063/1.4944885
Published: April 2016
View article titled, Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors
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Journal Articles

Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

Alexander Pooth, Michael J. Uren, Markus Cäsar, Trevor Martin, Martin Kuball
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 215701 (2015)
https://doi.org/10.1063/1.4936780
Published: December 2015
View article titled, Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias
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Journal Articles

Terahertz response of fractal meta-atoms based on concentric rectangular square resonators

Zhiqiang Song, Zhenyu Zhao, Wei Peng, Wangzhou Shi
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 193103 (2015)
https://doi.org/10.1063/1.4936217
Published: November 2015
View article titled, Terahertz response of fractal meta-atoms based on concentric rectangular square resonators
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Journal Articles

Textile inspired flexible metamaterial with negative refractive index

L. Burgnies, É. Lheurette, D. Lippens
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 144506 (2015)
https://doi.org/10.1063/1.4918314
Published: April 2015
View article titled, Textile inspired flexible metamaterial with negative refractive index
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Journal Articles

Coupling capacitance between double quantum dots tunable by the number of electrons in Si quantum dots

Takafumi Uchida, Masashi Arita, Akira Fujiwara, Yasuo Takahashi
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 084316 (2015)
https://doi.org/10.1063/1.4913393
Published: February 2015
View article titled, Coupling capacitance between double quantum dots tunable by the number of electrons in Si quantum dots
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Journal Articles

Tunnel magnetoresistance and linear conductance of double quantum dots strongly coupled to ferromagnetic leads

Ireneusz Weymann
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 117, 17D704 (2015)
https://doi.org/10.1063/1.4907329
Published: February 2015
View article titled, Tunnel magnetoresistance and linear conductance of double quantum dots strongly coupled to ferromagnetic leads
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Journal Articles

Synchronization of pairwise-coupled, identical, relaxation oscillators based on metal-insulator phase transition devices: A model study

Abhinav Parihar, Nikhil Shukla, Suman Datta, Arijit Raychowdhury
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 054902 (2015)
https://doi.org/10.1063/1.4906783
Published: February 2015
View article titled, Synchronization of pairwise-coupled, identical, relaxation oscillators based on metal-insulator phase transition devices: A model study
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Journal Articles

Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches

T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 115, 17C728 (2014)
https://doi.org/10.1063/1.4867129
Published: February 2014
View article titled, Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches
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Journal Articles

Optimization of Hall bar response to localized magnetic and electric fields

V. Nabaei, R. K. Rajkumar, A. Manzin, O. Kazakova, A. Tzalenchuk
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 064504 (2013)
https://doi.org/10.1063/1.4790508
Published: February 2013
View article titled, Optimization of Hall bar response to localized magnetic and electric fields
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Journal Articles

Suppressing on-chip electromagnetic crosstalk for spin qubit devices

S. Blanvillain, J. I. Colless, D. J. Reilly, H. Lu, A. C. Gossard
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 064315 (2012)
https://doi.org/10.1063/1.4752863
Published: September 2012
View article titled, Suppressing on-chip electromagnetic crosstalk for spin qubit devices
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