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Journal Articles

High breakdown voltages on pseudo-vertical p–n diodes by selective area growth of GaN on silicon

Thomas Kaltsounis, Mohammed El Amrani, David Plaza Arguello, Hala El Rammouz, Matthieu Lafossas, Simona Torrengo, Laurent Mendizabal, Alain Gueugnot, Denis Mariolle, Thomas Jalabert, Julien Buckley, Yvon Cordier, Matthew Charles

J. Appl. Phys. 136, 175705 (2024)

https://doi.org/10.1063/5.0228976

Published: November 2024

View articletitled, High breakdown voltages on pseudo-vertical p–n diodes by selective area growth of GaN on silicon

Journal Articles

Formation and stability of point defect color centers in 6H silicon carbide

Erlend Lemva Ousdal, Marianne Etzelmüller Bathen, Augustinas Galeckas, Andrej Kuznetsov, Lasse Vines

J. Appl. Phys. 135, 225701 (2024)

https://doi.org/10.1063/5.0205832

Published: June 2024

View articletitled, Formation and stability of point defect color centers in 6H silicon carbide

Journal Articles

Analysis of interface trap induced ledge in β-Ga₂O₃ based MOS structures using UV-assisted capacitance–voltage measurements

Aditya K. Bhat, Hyun-Seop Kim, Abhishek Mishra, Matthew D. Smith, Michael J. Uren, Martin Kuball

J. Appl. Phys. 135, 195704 (2024)

https://doi.org/10.1063/5.0203022

Published: May 2024

View articletitled, Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements

Journal Articles

Trap states and carrier diffusion lengths in NiO/β-Ga₂O₃ heterojunctions

A. Y. Polyakov, E. B. Yakimov, D. S. Saranin, A. V. Chernykh, A. A. Vasilev, P. Gostishchev, A. I. Kochkova, L. A. Alexanyan, N. R. Matros, I. V. Shchemerov, S. J. Pearton

J. Appl. Phys. 135, 165703 (2024)

https://doi.org/10.1063/5.0203526

Published: April 2024

View articletitled, Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

Journal Articles

Calibration of second harmonic generation technique to probe the field-effect passivation of Si(100) with Al₂O₃ dielectric layers

B. Obeid, L. Bastard, A. Bouchard, V. Aubriet, K. Jouannic, D. Le Cunff, O. Gourhant, I. Ionica

J. Appl. Phys. 135, 095306 (2024)

https://doi.org/10.1063/5.0188837

Published: March 2024

View articletitled, Calibration of second harmonic generation technique to probe the field-effect passivation of Si(100) with Al2O3 dielectric layers

Journal Articles

Gettering of iron by aluminum oxide thin films on silicon wafers: Kinetics and mechanisms

Tien Trong Le, Zhongshu Yang, Wensheng Liang, Daniel Macdonald, AnYao Liu

J. Appl. Phys. 135, 063102 (2024)

https://doi.org/10.1063/5.0182127

Published: February 2024

View articletitled, Gettering of iron by aluminum oxide thin films on silicon wafers: Kinetics and mechanisms

Journal Articles

Effects of 63 MeV proton irradiation on the performance of MWIR InGaAs/InAsSb nBn photodetectors

A. T. Newell, J. V. Logan, R. A. Carrasco, C. P. Hains, G. Ariyawansa, J. M. Duran, G. Balakrishnan, D. Maestas, C. P. Morath, P. T. Webster

J. Appl. Phys. 134, 144501 (2023)

https://doi.org/10.1063/5.0169264

Published: October 2023

View articletitled, Effects of 63 MeV proton irradiation on the performance of MWIR InGaAs/InAsSb nBn photodetectors

Journal Articles

Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors

B. D. Rummel, J. A. Cooper, D. T. Morisette, L. Yates, C. E. Glaser, A. T. Binder, K. Ramadoss, R. J. Kaplar

J. Appl. Phys. 134, 125302 (2023)

https://doi.org/10.1063/5.0158333

Published: September 2023

View articletitled, Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors

Journal Articles

Interface and oxide trap states of SiO₂/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Shingo Ogawa, Hidetoshi Mizobata, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

J. Appl. Phys. 134, 095704 (2023)

https://doi.org/10.1063/5.0165894

Published: September 2023

View articletitled, Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Journal Articles

Electrical properties and parameter analysis of all-solid-state LaZrO/InO electric double-layer transistors

Hiromi Nakazawa, Hiroshi Ishii, Yuzuru Takamura

J. Appl. Phys. 134, 024502 (2023)

https://doi.org/10.1063/5.0152597

Published: July 2023

View articletitled, Electrical properties and parameter analysis of all-solid-state LaZrO/InO electric double-layer transistors

Journal Articles

Electrical properties and energy band alignments of p-Si/n-Ga₂O₃ and p⁺-Si/n-Ga₂O₃ heterostructures fabricated by surface-activated bonding

Zhenwei Wang, Takahiro Kitada, Daiki Takatsuki, Jianbo Liang, Naoteru Shigekawa, Masataka Higashiwaki

J. Appl. Phys. 133, 194503 (2023)

https://doi.org/10.1063/5.0128554

Published: May 2023

View articletitled, Electrical properties and energy band alignments of p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding

Journal Articles

Capacitance–voltage modeling of mid-wavelength infrared nBn detectors

Rigo A. Carrasco, Alexander T. Newell, Zinah M. Alsaad, Julie V. Logan, Joshua M. Duran, Gamini Ariyawansa, Benjamin Pinkie, Christian P. Morath, Preston T. Webster

J. Appl. Phys. 133, 104503 (2023)

https://doi.org/10.1063/5.0138468

Published: March 2023

View articletitled, Capacitance–voltage modeling of mid-wavelength infrared nBn detectors

Journal Articles

Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells

Christopher Chen, Jeong-Mo Hwang, Young-Woo Ok, Wook-Jin Choi, Vijaykumar Upadhyaya, Brian Rounsaville, Ajeet Rohatgi

J. Appl. Phys. 132, 213302 (2022)

https://doi.org/10.1063/5.0111681

Published: December 2022

View articletitled, Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells

Journal Articles

A numerical modeling of the frequency dependence of the capacitance–voltage and conductance–voltage characteristics of GaN MIS structures

K. Nishiguchi, K. Nakata, T. Hashizume

J. Appl. Phys. 132, 175302 (2022)

https://doi.org/10.1063/5.0112198

Published: November 2022

View articletitled, A numerical modeling of the frequency dependence of the capacitance–voltage and conductance–voltage characteristics of GaN MIS structures

Journal Articles

Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond

Atsushi Hiraiwa, Satoshi Okubo, Masahiko Ogura, Yu Fu, Hiroshi Kawarada

J. Appl. Phys. 132, 125702 (2022)

https://doi.org/10.1063/5.0104016

Published: September 2022

View articletitled, Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond

Includes: Supplementary data

Journal Articles

Optical and electronic effects of rapid thermal annealing at Ir–Ga₂O₃ interfaces

Daram N. Ramdin, Micah S. Haseman, Hsien-Lien Huang, Kevin D. Leedy, Jinwoo Hwang, Leonard J. Brillson

J. Appl. Phys. 131, 205302 (2022)

https://doi.org/10.1063/5.0090161

Published: May 2022

View articletitled, Optical and electronic effects of rapid thermal annealing at Ir–Ga2O3 interfaces

Includes: Supplementary data

Journal Articles

Mg-doping and free-hole properties of hot-wall MOCVD GaN

A. Papamichail, A. Kakanakova-Georgieva, E. Ö. Sveinbjörnsson, A. R. Persson, B. Hult, N. Rorsman, V. Stanishev, S. P. Le, P. O. Å. Persson, M. Nawaz, J. T. Chen, P. P. Paskov, V. Darakchieva

J. Appl. Phys. 131, 185704 (2022)

https://doi.org/10.1063/5.0089406

Published: May 2022

View articletitled, Mg-doping and free-hole properties of hot-wall MOCVD GaN

Includes: Supplementary data

Journal Articles

Transport properties of a thin GaN channel formed in an Al_0.9Ga_0.1N/GaN heterostructure grown on AlN/sapphire template

Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, Farid Medjdoub, Philippe Ferrandis

J. Appl. Phys. 131, 124501 (2022)

https://doi.org/10.1063/5.0077107

Published: March 2022

View articletitled, Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template

Journal Articles

On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors

Philipp Döring, Matthias Sinnwell, Richard Reiner, Rachid Driad, Patrick Waltereit, Stefano Leone, Stefan Müller, Michael Mikulla, Oliver Ambacher

J. Appl. Phys. 131, 114502 (2022)

https://doi.org/10.1063/5.0079760

Published: March 2022

View articletitled, On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors

Journal Articles

Effects of high temperature annealing on the atomic layer deposited HfO₂/β-Ga₂O₃ ( 010 ) interface

Hannah N. Masten, Jamie D. Phillips, Rebecca L. Peterson

J. Appl. Phys. 131, 035106 (2022)

https://doi.org/10.1063/5.0070105

Published: January 2022

View articletitled, Effects of high temperature annealing on the atomic layer deposited HfO2/β-Ga2O3 ( 010 ) interface

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High breakdown voltages on pseudo-vertical p–n diodes by selective area growth of GaN on silicon

Formation and stability of point defect color centers in 6H silicon carbide

Analysis of interface trap induced ledge in β-Ga₂O₃ based MOS structures using UV-assisted capacitance–voltage measurements

Trap states and carrier diffusion lengths in NiO/β-Ga₂O₃ heterojunctions

Calibration of second harmonic generation technique to probe the field-effect passivation of Si(100) with Al₂O₃ dielectric layers

Gettering of iron by aluminum oxide thin films on silicon wafers: Kinetics and mechanisms

Effects of 63 MeV proton irradiation on the performance of MWIR InGaAs/InAsSb nBn photodetectors

Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors

Interface and oxide trap states of SiO₂/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Electrical properties and parameter analysis of all-solid-state LaZrO/InO electric double-layer transistors

Electrical properties and energy band alignments of p-Si/n-Ga₂O₃ and p⁺-Si/n-Ga₂O₃ heterostructures fabricated by surface-activated bonding

Capacitance–voltage modeling of mid-wavelength infrared nBn detectors

Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells

A numerical modeling of the frequency dependence of the capacitance–voltage and conductance–voltage characteristics of GaN MIS structures

Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond

Optical and electronic effects of rapid thermal annealing at Ir–Ga₂O₃ interfaces

Mg-doping and free-hole properties of hot-wall MOCVD GaN

Transport properties of a thin GaN channel formed in an Al_0.9Ga_0.1N/GaN heterostructure grown on AlN/sapphire template

On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors

Effects of high temperature annealing on the atomic layer deposited HfO₂/β-Ga₂O₃ ( 010 ) interface

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