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Journal Articles

The transition between the collision-dominated and ballistic electron transport regimes as the device length is reduced: A continuum analysis

Open Access
Alireza Azimi, Mohammadreza Azimi, Michael S. Shur, Stephen K. O’Leary
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 035702 (2024)
https://doi.org/10.1063/5.0211046
Published: July 2024
View article titled, The transition between the collision-dominated and ballistic electron transport regimes as the device length is reduced: A continuum analysis
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Journal Articles

Performance limits exploration of sub-5 nm monolayer germanane transistors: A first-principle quantum transport simulation

Open Access
Leyao Xu, Jinchang Liu, Cong Shao, Hua Li, WeiQing Ma, Junfeng Yan, Yunyao Zhang, Yang Dai, Xiaoyi Lei, Chenguang Liao, Zhiyong Zhang, Wu Zhao, Jing Lu, Han Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 134303 (2024)
https://doi.org/10.1063/5.0192389
Published: April 2024
View article titled, Performance limits exploration of sub-5 nm monolayer germanane transistors: A first-principle quantum transport simulation
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Journal Articles

Modeling of non-intrinsic noise in nanometer metal oxide semiconductor field effect transistors

Open Access
Xiaofei Jia, Qun Wei, Wenpeng Zhang, Liang He, Zhenhua Wu
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 035704 (2024)
https://doi.org/10.1063/5.0180749
Published: January 2024
View article titled, Modeling of non-intrinsic noise in nanometer metal oxide semiconductor field effect transistors
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Journal Articles

Ballistic transport and spin-dependent anomalous quantum tunneling in Rashba–Zeeman and bilayer graphene hybrid structures

Free
Saumen Acharjee, Arindam Boruah, Reeta Devi, Nimisha Dutta
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 023902 (2024)
https://doi.org/10.1063/5.0174626
Published: January 2024
View article titled, Ballistic transport and spin-dependent anomalous quantum tunneling in Rashba–Zeeman and bilayer graphene hybrid structures
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Journal Articles

Advances in separation of monochiral semiconducting carbon nanotubes and the application in electronics

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Yanan Sun, Jiejie Zhu, Wenhui Yi, Yuxiang Wei, Xuejiao Zhou, Peng Zhang, Yang Liu, Peixian Li, Yimin Lei, Xiaohua Ma
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 230701 (2023)
https://doi.org/10.1063/5.0172970
Published: December 2023
View article titled, Advances in separation of monochiral semiconducting carbon nanotubes and the application in electronics
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Journal Articles

Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors

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Isabel Harrysson Rodrigues, Niklas Rorsman, Andrei Vorobiev
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 244303 (2022)
https://doi.org/10.1063/5.0121439
Published: December 2022
View article titled, Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors
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Journal Articles

Theoretical analysis of efficiency for vacuum photoelectric energy converters with plasmon-enhanced electron emitter

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Shisong Luo, Yicong Chen, Zhibing Li, Jun Chen
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 023104 (2021)
https://doi.org/10.1063/5.0054344
Published: July 2021
View article titled, Theoretical analysis of efficiency for vacuum photoelectric energy converters with plasmon-enhanced electron emitter
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Includes: Supplementary data
Journal Articles

Dynamical characteristics of the piezotronic ZnO nanowire device in ballistic transport and its MEMS/NEMS resonator hybrid

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Leisheng Jin, Zhi Li, Zongqing Jiang, Lijie Li
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 194501 (2021)
https://doi.org/10.1063/5.0043042
Published: May 2021
View article titled, Dynamical characteristics of the piezotronic ZnO nanowire device in ballistic transport and its MEMS/NEMS resonator hybrid
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Journal Articles

Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In0.53Ga0.47As n-channel FinFETs

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Aqyan A. Bhatti, Dax M. Crum, Amithraj Valsaraj, Leonard F. Register, Sanjay K. Banerjee
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 105705 (2019)
https://doi.org/10.1063/1.5096391
Published: September 2019
View article titled, Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In0.53Ga0.47As n-channel FinFETs
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Journal Articles

Dependence of the 0.5 × (2e2/h) conductance plateau on the aspect ratio of InAs quantum point contacts with in-plane side gates

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P. P. Das, A. Jones, M. Cahay, S. Kalita, S. S. Mal, N. S. Sterin, T. R. Yadunath, M. Advaitha, S. T. Herbert
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 083901 (2017)
https://doi.org/10.1063/1.4977110
Published: February 2017
View article titled, Dependence of the 0.5 × (2e2/h) conductance plateau on the aspect ratio of InAs quantum point contacts with in-plane side gates
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Journal Articles

Photodetectors with zigzag and armchair graphene nanoribbon channels and asymmetric source and drain contacts: Detectors for visible and solar blind applications

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Fatemeh Ostovari, Mohammad Kazem Moravvej-Farshi
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 144505 (2016)
https://doi.org/10.1063/1.4964436
Published: October 2016
View article titled, Photodetectors with zigzag and armchair graphene nanoribbon channels and asymmetric source and drain contacts: Detectors for visible and solar blind applications
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Journal Articles

Room temperature on-wafer ballistic graphene field-effect-transistor with oblique double-gate

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Mircea Dragoman, Adrian Dinescu, Daniela Dragoman
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 244305 (2016)
https://doi.org/10.1063/1.4954639
Published: June 2016
View article titled, Room temperature on-wafer ballistic graphene field-effect-transistor with oblique double-gate
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Journal Articles

Density functional theory based simulations of silicon nanowire field effect transistors

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Mincheol Shin, Woo Jin Jeong, Jaehyun Lee
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 154505 (2016)
https://doi.org/10.1063/1.4946754
Published: April 2016
View article titled, Density functional theory based simulations of silicon nanowire field effect transistors
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Journal Articles

Quantization and anomalous structures in the conductance of Si/SiGe quantum point contacts

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J. F. von Pock, D. Salloch, G. Qiao, U. Wieser, T. Hackbarth, U. Kunze
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 134306 (2016)
https://doi.org/10.1063/1.4945116
Published: April 2016
View article titled, Quantization and anomalous structures in the conductance of Si/SiGe quantum point contacts
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Journal Articles

Anomalous degradation of low-field mobility in short-channel metal-oxide-semiconductor field-effect transistors

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Kenji Natori, Hiroshi Iwai, Kuniyuki Kakushima
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 234502 (2015)
https://doi.org/10.1063/1.4937548
Published: December 2015
View article titled, Anomalous degradation of low-field mobility in short-channel metal-oxide-semiconductor field-effect transistors
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Journal Articles

Spatially resolved band alignments at Au-hexadecanethiol monolayer-GaAs(001) interfaces by ballistic electron emission microscopy

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A. Junay, S. Guézo, P. Turban, G. Delhaye, B. Lépine, S. Tricot, S. Ababou-Girard, F. Solal
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 085310 (2015)
https://doi.org/10.1063/1.4928167
Published: August 2015
View article titled, Spatially resolved band alignments at Au-hexadecanethiol monolayer-GaAs(001) interfaces by ballistic electron emission microscopy
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Journal Articles

Study on the frequency characteristics of nanogap electron devices

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Ji Xu, Qilong Wang, Zhiyang Qi, Yusheng Zhai, Xiaobing Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 204504 (2015)
https://doi.org/10.1063/1.4921866
Published: May 2015
View article titled, Study on the frequency characteristics of nanogap electron devices
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Journal Articles

Ultimate response time of high electron mobility transistors

Free
Sergey Rudin, Greg Rupper, Michael Shur
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 174502 (2015)
https://doi.org/10.1063/1.4919706
Published: May 2015
View article titled, Ultimate response time of high electron mobility transistors
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Journal Articles

Analysis of ballistic transport in nanoscale devices by using an accelerated finite element contact block reduction approach

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H. Li, G. Li
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 084501 (2014)
https://doi.org/10.1063/1.4893581
Published: August 2014
View article titled, Analysis of ballistic transport in nanoscale devices by using an accelerated finite element contact block reduction approach
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Journal Articles

Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor

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Jongkyong Lee, Suhyun Gang, Yongcheol Jo, Jongmin Kim, Hyeonseok Woo, Jaeseok Han, Hyungsang Kim, Hyunsik Im
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 044514 (2014)
https://doi.org/10.1063/1.4891730
Published: July 2014
View article titled, Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor
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