1-20 of 381
Schottky diodes
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Impacts of silicon carbide defects on electrical characteristics of SiC devices

Lingling Lai, Yingxin Cui, Yu Zhong, Kuan Yew Cheong, Handoko Linewih, Xiangang Xu, Jisheng Han
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 060701 (2025)
https://doi.org/10.1063/5.0239362
Published: February 2025
View articletitled, Impacts of silicon carbide defects on electrical characteristics of SiC devices
Open the PDF for Impacts of silicon carbide defects on electrical characteristics of SiC devices in another window
Journal Articles

Radiation resilience of β-Ga2O3 Schottky barrier diodes under high dose gamma radiation

Saleh Ahmed Khan, Sudipto Saha, Uttam Singisetti, A. F. M. Anhar Uddin Bhuiyan
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 225701 (2024)
https://doi.org/10.1063/5.0233995
Published: December 2024
View articletitled, Radiation resilience of β-Ga2O3 Schottky barrier diodes under high dose gamma radiation
Open the PDF for Radiation resilience of β-Ga2O3 Schottky barrier diodes under high dose gamma radiation in another window
Journal Articles

Impacts of single Shockley-type stacking faults on current conduction in 4H-SiC PiN diodes

Editor’s Pick
Satoshi Asada, Koichi Murata, Hidekazu Tsuchida
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 175702 (2024)
https://doi.org/10.1063/5.0238793
Published: November 2024
View articletitled, Impacts of single Shockley-type stacking faults on current conduction in 4H-SiC PiN diodes
Open the PDF for Impacts of single Shockley-type stacking faults on current conduction in 4H-SiC PiN diodes in another window
Journal Articles

Analytical model and experimental validation of critical dependency of pGaN gated AlGaN/GaN enhancement-mode high electron mobility transistor characteristics on trap-assisted tunneling

Ranie S. Jeyakumar, J. J. James, Swaroop Ganguly, Dipankar Saha
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 155703 (2024)
https://doi.org/10.1063/5.0231721
Published: October 2024
View articletitled, Analytical model and experimental validation of critical dependency of pGaN gated AlGaN/GaN enhancement-mode high electron mobility transistor characteristics on trap-assisted tunneling
Open the PDF for Analytical model and experimental validation of critical dependency of pGaN gated AlGaN/GaN enhancement-mode high electron mobility transistor characteristics on trap-assisted tunneling in another window
Journal Articles

Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates

C. A. Dawe, V. P. Markevich, M. P. Halsall, I. D. Hawkins, A. R. Peaker, A. Nandi, I. Sanyal, M. Kuball
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 045705 (2024)
https://doi.org/10.1063/5.0202581
Published: July 2024
View articletitled, Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates
Open the PDF for Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates in another window
Journal Articles

Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n+ epitaxial wafer

Shenzhong Li, Tong Zhao, Defan Wu, Xingbo Liang, Hao Chen, Qunlin Nie, Daxi Tian, Xiangyang Ma, Deren Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 235704 (2024)
https://doi.org/10.1063/5.0202400
Published: June 2024
View articletitled, Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n+ epitaxial wafer
Open the PDF for Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n+ epitaxial wafer in another window
Journal Articles

Engraved complementary toroidal metasurfaces for potential energy harvesting applications in microwave band

G. Fanourakis, P. Markaki, A. Theodosi, O. Tsilipakos, Z. Viskadourakis, G. Kenanakis
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 213101 (2024)
https://doi.org/10.1063/5.0190763
Published: June 2024
View articletitled, Engraved complementary toroidal metasurfaces for potential energy harvesting applications in microwave band
Open the PDF for Engraved complementary toroidal metasurfaces for potential energy harvesting applications in microwave band in another window
Journal Articles

Perspective on electrically active defects in β - G a 2 O 3 from deep-level transient spectroscopy and first-principles calculations

Editor’s Pick
Amanda Langørgen, Lasse Vines, Ymir Kalmann Frodason
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 195702 (2024)
https://doi.org/10.1063/5.0205950
Published: May 2024
View articletitled, Perspective on electrically active defects in β - G a 2 O 3 from deep-level transient spectroscopy and first-principles calculations
Open the PDF for Perspective on electrically active defects in β - G a 2 O 3 from deep-level transient spectroscopy and first-principles calculations in another window
Journal Articles

The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

L. Sun, P. Kruszewski, V. P. Markevich, C. A. Dawe, A. R. Peaker, I. F. Crowe, J. Plesiewicz, P. Prystawko, Sz. Grzanka, E. Grzanka, R. Jakiela, D. Binks, M. P. Halsall
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 175702 (2024)
https://doi.org/10.1063/5.0205998
Published: May 2024
View articletitled, The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers
Open the PDF for The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers in another window
Journal Articles

Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

A. Y. Polyakov, E. B. Yakimov, D. S. Saranin, A. V. Chernykh, A. A. Vasilev, P. Gostishchev, A. I. Kochkova, L. A. Alexanyan, N. R. Matros, I. V. Shchemerov, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 165703 (2024)
https://doi.org/10.1063/5.0203526
Published: April 2024
View articletitled, Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions
Open the PDF for Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions in another window
Journal Articles

Ge doping of α-Ga2O3 thin films via mist chemical vapor deposition and their application in Schottky barrier diodes

Takeru Wakamatsu, Yuki Isobe, Hitoshi Takane, Kentaro Kaneko, Katsuhisa Tanaka
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 155705 (2024)
https://doi.org/10.1063/5.0207432
Published: April 2024
View articletitled, Ge doping of α-Ga2O3 thin films via mist chemical vapor deposition and their application in Schottky barrier diodes
Open the PDF for Ge doping of α-Ga2O3 thin films via mist chemical vapor deposition and their application in Schottky barrier diodes in another window
Journal Articles

Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing

Haoxin Li, Zhao Han, Xuanze Zhou, Guangwei Xu, Shibing Long
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 114501 (2024)
https://doi.org/10.1063/5.0195890
Published: March 2024
View articletitled, Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing
Open the PDF for Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing in another window
Journal Articles

Wideband metasurface-loaded rectenna for azimuth-insensitive electromagnetic energy absorption using characteristic mode analysis

Lianwen Deng, Zhe-Jia He, Shengxiang Huang, Lei-Lei Qiu, Lei Zhu
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 115001 (2024)
https://doi.org/10.1063/5.0193058
Published: March 2024
View articletitled, Wideband metasurface-loaded rectenna for azimuth-insensitive electromagnetic energy absorption using characteristic mode analysis
Open the PDF for Wideband metasurface-loaded rectenna for azimuth-insensitive electromagnetic energy absorption using characteristic mode analysis in another window
Journal Articles

Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes

Nolan S. Hendricks, Ahmad E. Islam, Elizabeth A. Sowers, Jeremiah Williams, Daniel M. Dryden, Kyle J. Liddy, Weisong Wang, James S. Speck, Andrew J. Green
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 095705 (2024)
https://doi.org/10.1063/5.0188432
Published: March 2024
View articletitled, Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes
Open the PDF for Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes in another window
Journal Articles

Impact of swift heavy oxygen ion irradiation on the performance of Pt/GaN Schottky diodes and epitaxial layers: A comparative study

Kamal Singh, Parmod Kumar, Vaishali Rathi, Tanuj Kumar, Ratnesh K. Pandey, D. Kanjilal, Ranjeet K. Brajpuriya, Ashish Kumar
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 165704 (2023)
https://doi.org/10.1063/5.0171363
Published: October 2023
View articletitled, Impact of swift heavy oxygen ion irradiation on the performance of Pt/GaN Schottky diodes and epitaxial layers: A comparative study
Open the PDF for Impact of swift heavy oxygen ion irradiation on the performance of Pt/GaN Schottky diodes and epitaxial layers: A comparative study in another window
Journal Articles

Temperature dependence of avalanche breakdown in 4H-SiC devices

Philipp Steinmann, Brett Hull, In-Hwan Ji, Daniel Lichtenwalner, Edward Van Brunt
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 235705 (2023)
https://doi.org/10.1063/5.0152385
Published: June 2023
View articletitled, Temperature dependence of avalanche breakdown in 4H-SiC devices
Open the PDF for Temperature dependence of avalanche breakdown in 4H-SiC devices in another window
Journal Articles

Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two Gp/ω peaks

Noboru Fukuhara, Fumimasa Horikiri, Taiki Yamamoto, Takenori Osada, Kenji Kasahara, Takayuki Inoue, Takashi Egawa
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 085702 (2023)
https://doi.org/10.1063/5.0127499
Published: February 2023
View articletitled, Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two Gp/ω peaks
Open the PDF for Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two Gp/ω peaks in another window
Journal Articles

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

Joe F. McGlone, Hemant Ghadi, Evan Cornuelle, Andrew Armstrong, George Burns, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 045702 (2023)
https://doi.org/10.1063/5.0121416
Published: January 2023
View articletitled, Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3
Open the PDF for Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3 in another window
Journal Articles

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

F. Mirkhosravi, A. Rashidi, A. T. Elshafiey, J. Gallagher, Z. Abedi, K. Ahn, A. Lintereur, E. K. Mace, M. A. Scarpulla, D. Feezell
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 015704 (2023)
https://doi.org/10.1063/5.0119294
Published: January 2023
View articletitled, Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes
Open the PDF for Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes in another window
Journal Articles

Hard- and soft-breakdown modeling in <001> oriented β-Ga2O3 Schottky barrier diode

Takaya Sugiura, Nobuhiko Nakano
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 175703 (2022)
https://doi.org/10.1063/5.0125609
Published: November 2022
View articletitled, Hard- and soft-breakdown modeling in &lt;001&gt; oriented β-Ga2O3 Schottky barrier diode
Open the PDF for Hard- and soft-breakdown modeling in <001> oriented β-Ga2O3 Schottky barrier diode in another window