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Journal Articles

Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy

Tuhin Dey, Augustus W. Arbogast, Qian Meng, Md. Shamim Reza, Aaron J. Muhowski, Joshua J. P. Cooper, Erdem Ozdemir, Fabian U. Naab, Thales Borrely, Jonathan Anderson, Rachel S. Goldman, Daniel Wasserman, Seth R. Bank, Mark W. Holtz, Edwin L. Piner, Mark A. Wistey

J. Appl. Phys. 134, 193102 (2023)

https://doi.org/10.1063/5.0173429

Published: November 2023

View article titled, Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy

Includes: Supplementary data

Journal Articles

Polarization-matching and carrier confinement in III-nitride deep-ultraviolet light-emitting diodes

R. R. Aguileta-Vazquez, Z. Liu, F. AlQatari, Y. Lu, X. Tang, P. A. Miranda-Cortez, X. Li

J. Appl. Phys. 134, 184501 (2023)

https://doi.org/10.1063/5.0166175

Published: November 2023

View article titled, Polarization-matching and carrier confinement in III-nitride deep-ultraviolet light-emitting diodes

Includes: Supplementary data

Journal Articles

Analytical model for the injection recombination current in quantum well micro-light emitting diodes

A. Tsormpatzoglou, T. A. Oproglidis, I. Pappas, C. A. Dimitriadis

J. Appl. Phys. 134, 154501 (2023)

https://doi.org/10.1063/5.0171766

Published: October 2023

View article titled, Analytical model for the injection recombination current in quantum well micro-light emitting diodes

Journal Articles

Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation

Yihong Ji, Martin Frentrup, Xiaotian Zhang, Jakub Pongrácz, Simon M. Fairclough, Yingjun Liu, Tongtong Zhu, Rachel A. Oliver

J. Appl. Phys. 134, 145102 (2023)

https://doi.org/10.1063/5.0165066

Published: October 2023

View article titled, Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation

Includes: Supplementary data

Journal Articles

Local optical analysis of InGaN/GaN nanorod LED structures grown on Si(111)

Johanna Meier, Patrick Häuser, Christian Blumberg, Tim Smola, Werner Prost, Nils Weimann, Gerd Bacher

J. Appl. Phys. 134, 044303 (2023)

https://doi.org/10.1063/5.0153713

Published: July 2023

View article titled, Local optical analysis of InGaN/GaN nanorod LED structures grown on Si(111)

Includes: Supplementary data

Journal Articles

High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes

Kilian Baril, Pierre-Marie Coulon, Mrad Mrad, Nabil Labchir, Guy Feuillet, Matthew Charles, Cécile Gourgon, Philippe Vennéguès, Jesus Zuniga-Perez, Blandine Alloing

J. Appl. Phys. 133, 245702 (2023)

https://doi.org/10.1063/5.0149882

Published: June 2023

View article titled, High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes

Journal Articles

Sapphire crystal growth and solid–liquid interface structure: An investigation by molecular dynamic simulation and Czochralski growth

Feng Liu, Kunfeng Chen, Chao Peng, Dongfeng Xue

J. Appl. Phys. 133, 175301 (2023)

https://doi.org/10.1063/5.0137352

Published: May 2023

View article titled, Sapphire crystal growth and solid–liquid interface structure: An investigation by molecular dynamic simulation and Czochralski growth

Includes: Supplementary data

Journal Articles

Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Y. C. Chow, C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, J. S. Speck

J. Appl. Phys. 133, 143101 (2023)

https://doi.org/10.1063/5.0142035

Published: April 2023

View article titled, Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Includes: Supplementary data

Journal Articles

Simultaneously improve the Purcell factor and internal quantum efficiency of light-emitting diodes via surface plasmon by metal conic structure

Zhenhuan Tian, Mingyin Zhang, Xuzheng Wang, Qiang Li, Yufeng Li, Feng Yun, S. W. Ricky Lee

J. Appl. Phys. 133, 124901 (2023)

https://doi.org/10.1063/5.0123552

Published: March 2023

View article titled, Simultaneously improve the Purcell factor and internal quantum efficiency of light-emitting diodes via surface plasmon by metal conic structure

Journal Articles

Tuning electrical properties in Ga₂O₃ polymorphs induced with ion beams

A. Y. Polyakov, А. I. Kochkova, A. Azarov, V. Venkatachalapathy, A. V. Miakonkikh, A. A. Vasilev, A. V. Chernykh, I. V. Shchemerov, A. A. Romanov, A. Kuznetsov, S. J. Pearton

J. Appl. Phys. 133, 095701 (2023)

https://doi.org/10.1063/5.0133181

Published: March 2023

View article titled, Tuning electrical properties in Ga2O3 polymorphs induced with ion beams

Includes: Supplementary data

Journal Articles

Structure of V-defects in long wavelength GaN-based light emitting diodes

Feng Wu, Jacob Ewing, Cheyenne Lynsky, Michael Iza, Shuji Nakamura, Steven P. DenBaars, James S. Speck

J. Appl. Phys. 133, 035703 (2023)

https://doi.org/10.1063/5.0135278

Published: January 2023

View article titled, Structure of V-defects in long wavelength GaN-based light emitting diodes

Journal Articles

Depth profiling of AlN and Al_xGa_1−xN crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source

O. Romanyuk, J. Brault, I. Gordeev, E. Ukraintsev, J. Houdková, P. Jiříček

J. Appl. Phys. 133, 035301 (2023)

https://doi.org/10.1063/5.0125938

Published: January 2023

View article titled, Depth profiling of AlN and AlxGa1−xN crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source

Includes: Supplementary data

Journal Articles

Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well

Shaobo Yang, Shung-Hsiang Wu, Yu-Sheng Lin, Chun-Jui Chu, C. C. Yang

J. Appl. Phys. 133, 023104 (2023)

https://doi.org/10.1063/5.0132941

Published: January 2023

View article titled, Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well

Journal Articles

Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects

Sheikh Ifatur Rahman, Zane Jamal-Eddine, Zhanbo Xia, Mohammad Awwad, Robert Armitage, Siddharth Rajan

J. Appl. Phys. 132, 235702 (2022)

https://doi.org/10.1063/5.0125684

Published: December 2022

View article titled, Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects

Journal Articles

Perovskite quantum dots: Synthesis, applications, prospects, and challenges

Jifan Zou, Mengkai Li, Xiaoyu Zhang, Weitao Zheng

J. Appl. Phys. 132, 220901 (2022)

https://doi.org/10.1063/5.0126496

Published: December 2022

View article titled, Perovskite quantum dots: Synthesis, applications, prospects, and challenges

Journal Articles

Interplay between Auger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes

Y.-C. Tsai, C. Bayram, J.-P. Leburton

J. Appl. Phys. 131, 193102 (2022)

https://doi.org/10.1063/5.0089463

Published: May 2022

View article titled, Interplay between Auger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes

Includes: Supplementary data

Journal Articles

The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer

Jeong-Hwan Park, Wentao Cai, Heajeong Cheong, Yasuhisa Ushida, Da-Hoon Lee, Yuto Ando, Yuta Furusawa, Yoshio Honda, Dong-Seon Lee, Tae-Yeon Seong, Hiroshi Amano

J. Appl. Phys. 131, 153104 (2022)

https://doi.org/10.1063/5.0085384

Published: April 2022

View article titled, The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer

Includes: Supplementary data

Journal Articles

Cutting-edge nano-LED technology

Martin Mikulics, Joachim Mayer, Hilde Helen Hardtdegen

J. Appl. Phys. 131, 110903 (2022)

https://doi.org/10.1063/5.0087279

Published: March 2022

View article titled, Cutting-edge nano-LED technology

Journal Articles

Cascaded InGaSb quantum dot mid-infrared LEDs

A. J. Muhowski, A. Kamboj, A. F. Briggs, L. Nordin, S. R. Bank, D. Wasserman

J. Appl. Phys. 131, 043105 (2022)

https://doi.org/10.1063/5.0072984

Published: January 2022

View article titled, Cascaded InGaSb quantum dot mid-infrared LEDs

Journal Articles

Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers

A. Mogilatenko, S. Walde, S. Hagedorn, C. Netzel, C.-Y. Huang, M. Weyers

J. Appl. Phys. 131, 045702 (2022)

https://doi.org/10.1063/5.0073076

Published: January 2022

View article titled, Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers

Includes: Supplementary data

NARROW

Topics

Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy

Polarization-matching and carrier confinement in III-nitride deep-ultraviolet light-emitting diodes

Analytical model for the injection recombination current in quantum well micro-light emitting diodes

Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation

Local optical analysis of InGaN/GaN nanorod LED structures grown on Si(111)

High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes

Sapphire crystal growth and solid–liquid interface structure: An investigation by molecular dynamic simulation and Czochralski growth

Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Simultaneously improve the Purcell factor and internal quantum efficiency of light-emitting diodes via surface plasmon by metal conic structure

Tuning electrical properties in Ga₂O₃ polymorphs induced with ion beams

Structure of V-defects in long wavelength GaN-based light emitting diodes

Depth profiling of AlN and Al_xGa_1−xN crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source

Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well

Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects

Perovskite quantum dots: Synthesis, applications, prospects, and challenges

Interplay between Auger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes

The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer

Cutting-edge nano-LED technology

Cascaded InGaSb quantum dot mid-infrared LEDs

Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers

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