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Journal Articles

Scaling effects on the microstructure and thermomechanical response of through silicon vias (TSVs)

Featured
Shuhang Lyu, Thomas Beechem, Tiwei Wei
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 085101 (2025)
https://doi.org/10.1063/5.0252921
Published: February 2025
View article titled, Scaling effects on the microstructure and thermomechanical response of through silicon vias (TSVs)
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Journal Articles

Cu interconnect lifetime estimation in the presence of thermal gradients

Editor’s Pick
Y. Ding, O. Varela Pedreira, M. Lofrano, H. Zahedmanesh, I. Ciofi, T. Chavez, H. Farr, I. De Wolf, K. Croes
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 075106 (2025)
https://doi.org/10.1063/5.0245489
Published: February 2025
View article titled, Cu interconnect lifetime estimation in the presence of thermal gradients
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Journal Articles

Electron scattering at interfaces in Ru(0001)/Co(0001) multilayers

Poyen Shen, Christian Lavoie, Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 025303 (2025)
https://doi.org/10.1063/5.0241912
Published: January 2025
View article titled, Electron scattering at interfaces in Ru(0001)/Co(0001) multilayers
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Journal Articles

Selecting alternative metals for advanced interconnects

Featured
Jean-Philippe Soulié, Kiroubanand Sankaran, Benoit Van Troeye, Alicja Leśniewska, Olalla Varela Pedreira, Herman Oprins, Gilles Delie, Claudia Fleischmann, Lizzie Boakes, Cédric Rolin, Lars-Åke Ragnarsson, Kristof Croes, Seongho Park, Johan Swerts, Geoffrey Pourtois, Zsolt Tőkei, Christoph Adelmann
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 171101 (2024)
https://doi.org/10.1063/5.0224027
Published: November 2024
View article titled, Selecting alternative metals for advanced interconnects
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Journal Articles

Material screening for future diffusion barriers in Cu interconnects: Modeling of binary and ternary metal alloys and detailed analysis of their barrier performance

Editor’s Pick
Bettina Wehring, Firat Karakus, Lukas Gerlich, Benjamin Lilienthal-Uhlig, Michael Hecker, Christoph Leyens
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 215302 (2024)
https://doi.org/10.1063/5.0211802
Published: June 2024
View article titled, Material screening for future diffusion barriers in Cu interconnects: Modeling of binary and ternary metal alloys and detailed analysis of their barrier performance
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Journal Articles

Resistivity size effect in epitaxial VNi2 layers

Minghua Zhang, Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 105302 (2023)
https://doi.org/10.1063/5.0160462
Published: September 2023
View article titled, Resistivity size effect in epitaxial VNi<sub>2</sub> layers
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Includes: Supplementary data
Journal Articles

Resistivity scaling in epitaxial MAX-phase Ti4SiC3(0001) layers

Minghua Zhang, Sushant Kumar, Ravishankar Sundararaman, Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 034302 (2021)
https://doi.org/10.1063/5.0054542
Published: July 2021
View article titled, Resistivity scaling in epitaxial MAX-phase Ti<sub>4</sub>SiC<sub>3</sub>(0001) layers
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Journal Articles

Non-specular scattering of carriers from surface defects in thin metal interconnects

Aniruddha Konar, Prashant P. Shinde, Shanthi Pandian, Shashishekar P. Adiga, K. Subramanya Mayya, Yeonchoo Cho, Hyeon-Jin Shin, Seongjun Park
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 185103 (2020)
https://doi.org/10.1063/5.0026771
Published: November 2020
View article titled, Non-specular scattering of carriers from surface defects in thin metal interconnects
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Journal Articles

Defects in epitaxial Ru(0001) on Al2O3(0001): Dislocations, stacking faults, and deformation twins

Katayun Barmak, Kadir Sentosun, Amirali Zangiabadi, Erik Milosevic, Daniel Gall, Miroslav Zecevic, Ricardo A. Lebensohn, Jerrold A. Floro
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 045304 (2020)
https://doi.org/10.1063/5.0015188
Published: July 2020
View article titled, Defects in epitaxial Ru(0001) on Al<sub>2</sub>O<sub>3</sub>(0001): Dislocations, stacking faults, and deformation twins
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Journal Articles

Role of conductivity on the electromigration-induced morphological evolution of inclusions in {110}-oriented single crystal metallic thin films

Jay Santoki, Arnab Mukherjee, Daniel Schneider, Britta Nestler
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 165305 (2019)
https://doi.org/10.1063/1.5119714
Published: October 2019
View article titled, Role of conductivity on the electromigration-induced morphological evolution of inclusions in {110}-oriented single crystal metallic thin films
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Journal Articles

Resistivity size effect in epitaxial Ru(0001) layers

Erik Milosevic, Sit Kerdsongpanya, Amirali Zangiabadi, Katayun Barmak, Kevin R. Coffey, Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 165105 (2018)
https://doi.org/10.1063/1.5046430
Published: October 2018
View article titled, Resistivity size effect in epitaxial Ru(0001) layers
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Journal Articles

Influence of convection at outer ceramic surfaces on the characterization of thermoelectric modules by impedance spectroscopy

Braulio Beltrán-Pitarch, Jorge García-Cañadas
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 084505 (2018)
https://doi.org/10.1063/1.5019881
Published: February 2018
View article titled, Influence of convection at outer ceramic surfaces on the characterization of thermoelectric modules by impedance spectroscopy
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Journal Articles

1/f noise measurements for faster evaluation of electromigration in advanced microelectronics interconnections

Sofie Beyne, Kristof Croes, Ingrid De Wolf, Zsolt Tőkei
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 184302 (2016)
https://doi.org/10.1063/1.4947582
Published: May 2016
View article titled, 1/f noise measurements for faster evaluation of electromigration in advanced microelectronics interconnections
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Journal Articles

Density functional theory study of the influence of segregation of S or Fe impurities on electromigration in nano-grained copper interconnects

M. Shabalin, D. Fuks
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 195303 (2015)
https://doi.org/10.1063/1.4919922
Published: May 2015
View article titled, Density functional theory study of the influence of segregation of S or Fe impurities on electromigration in nano-grained copper interconnects
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Journal Articles

In-situ scanning electron microscope observation of electromigration-induced void growth in 30 nm ½ pitch Cu interconnect structures

K. Vanstreels, P. Czarnecki, T. Kirimura, Y. K. Siew, I. De Wolf, J. Bömmels, Zs. Tőkei, K. Croes
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 074305 (2014)
https://doi.org/10.1063/1.4866330
Published: February 2014
View article titled, <em>In-situ</em> scanning electron microscope observation of electromigration-induced void growth in 30 nm ½ pitch Cu interconnect structures
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Journal Articles

Stress migration risk on electromigration reliability in advanced narrow line copper interconnects

A. Heryanto, K. L. Pey, Y. K. Lim, N. Raghavan, W. Liu, J. Wei, C. L. Gan, J. B. Tan
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 083702 (2011)
https://doi.org/10.1063/1.3651385
Published: October 2011
View article titled, Stress migration risk on electromigration reliability in advanced narrow line copper interconnects
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Journal Articles

Void dynamics in copper-based interconnects

Zung-Sun Choi, Junghoon Lee, Meng Keong Lim, Chee Lip Gan, Carl V. Thompson
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 033505 (2011)
https://doi.org/10.1063/1.3611408
Published: August 2011
View article titled, Void dynamics in copper-based interconnects
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Journal Articles

The effect of stress migration on electromigration in dual damascene copper interconnects

A. Heryanto, K. L. Pey, Y. K. Lim, W. Liu, N. Raghavan, J. Wei, C. L. Gan, M. K. Lim, J. B. Tan
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 013716 (2011)
https://doi.org/10.1063/1.3531393
Published: January 2011
View article titled, The effect of stress migration on electromigration in dual damascene copper interconnects
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Journal Articles

An investigation of electromigration induced void nucleation time statistics in short copper interconnects

V. M. Dwyer
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 103718 (2010)
https://doi.org/10.1063/1.3309744
Published: May 2010
View article titled, An investigation of electromigration induced void nucleation time statistics in short copper interconnects
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Journal Articles

Implications of a threshold failure time and void nucleation on electromigration of copper interconnects

R. G. Filippi, P.-C. Wang, A. Brendler, K. Chanda, J. R. Lloyd
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 103709 (2010)
https://doi.org/10.1063/1.3357161
Published: May 2010
View article titled, Implications of a threshold failure time and void nucleation on electromigration of copper interconnects
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