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Journal Articles

Resistivity size effect in epitaxial VNi2 layers

Minghua Zhang, Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 105302 (2023)
https://doi.org/10.1063/5.0160462
Published: September 2023
View article titled, Resistivity size effect in epitaxial VNi<sub>2</sub> layers
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Includes: Supplementary data
Journal Articles

Resistivity scaling in epitaxial MAX-phase Ti4SiC3(0001) layers

Minghua Zhang, Sushant Kumar, Ravishankar Sundararaman, Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 034302 (2021)
https://doi.org/10.1063/5.0054542
Published: July 2021
View article titled, Resistivity scaling in epitaxial MAX-phase Ti<sub>4</sub>SiC<sub>3</sub>(0001) layers
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Journal Articles

Non-specular scattering of carriers from surface defects in thin metal interconnects

Aniruddha Konar, Prashant P. Shinde, Shanthi Pandian, Shashishekar P. Adiga, K. Subramanya Mayya, Yeonchoo Cho, Hyeon-Jin Shin, Seongjun Park
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 185103 (2020)
https://doi.org/10.1063/5.0026771
Published: November 2020
View article titled, Non-specular scattering of carriers from surface defects in thin metal interconnects
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Journal Articles

Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling

Chun-Li Lo, Benjamin A. Helfrecht, Yanbo He, David M. Guzman, Nicolas Onofrio, Shengjiao Zhang, Dana Weinstein, Alejandro Strachan, Zhihong Chen
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 080903 (2020)
https://doi.org/10.1063/5.0013737
Published: August 2020
View article titled, Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling
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Journal Articles

Defects in epitaxial Ru(0001) on Al2O3(0001): Dislocations, stacking faults, and deformation twins

Katayun Barmak, Kadir Sentosun, Amirali Zangiabadi, Erik Milosevic, Daniel Gall, Miroslav Zecevic, Ricardo A. Lebensohn, Jerrold A. Floro
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 045304 (2020)
https://doi.org/10.1063/5.0015188
Published: July 2020
View article titled, Defects in epitaxial Ru(0001) on Al<sub>2</sub>O<sub>3</sub>(0001): Dislocations, stacking faults, and deformation twins
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Journal Articles

The search for the most conductive metal for narrow interconnect lines

Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 050901 (2020)
https://doi.org/10.1063/1.5133671
Published: February 2020
View article titled, The search for the most conductive metal for narrow interconnect lines
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Journal Articles

Role of conductivity on the electromigration-induced morphological evolution of inclusions in {110}-oriented single crystal metallic thin films

Jay Santoki, Arnab Mukherjee, Daniel Schneider, Britta Nestler
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 165305 (2019)
https://doi.org/10.1063/1.5119714
Published: October 2019
View article titled, Role of conductivity on the electromigration-induced morphological evolution of inclusions in {110}-oriented single crystal metallic thin films
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Journal Articles

Resistivity size effect in epitaxial Ru(0001) layers

Erik Milosevic, Sit Kerdsongpanya, Amirali Zangiabadi, Katayun Barmak, Kevin R. Coffey, Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 165105 (2018)
https://doi.org/10.1063/1.5046430
Published: October 2018
View article titled, Resistivity size effect in epitaxial Ru(0001) layers
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Journal Articles

Influence of convection at outer ceramic surfaces on the characterization of thermoelectric modules by impedance spectroscopy

Braulio Beltrán-Pitarch, Jorge García-Cañadas
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 084505 (2018)
https://doi.org/10.1063/1.5019881
Published: February 2018
View article titled, Influence of convection at outer ceramic surfaces on the characterization of thermoelectric modules by impedance spectroscopy
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Journal Articles

1/f noise measurements for faster evaluation of electromigration in advanced microelectronics interconnections

Sofie Beyne, Kristof Croes, Ingrid De Wolf, Zsolt Tőkei
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 184302 (2016)
https://doi.org/10.1063/1.4947582
Published: May 2016
View article titled, 1/f noise measurements for faster evaluation of electromigration in advanced microelectronics interconnections
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Journal Articles

Density functional theory study of the influence of segregation of S or Fe impurities on electromigration in nano-grained copper interconnects

M. Shabalin, D. Fuks
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 195303 (2015)
https://doi.org/10.1063/1.4919922
Published: May 2015
View article titled, Density functional theory study of the influence of segregation of S or Fe impurities on electromigration in nano-grained copper interconnects
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Journal Articles

In-situ scanning electron microscope observation of electromigration-induced void growth in 30 nm ½ pitch Cu interconnect structures

K. Vanstreels, P. Czarnecki, T. Kirimura, Y. K. Siew, I. De Wolf, J. Bömmels, Zs. Tőkei, K. Croes
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 074305 (2014)
https://doi.org/10.1063/1.4866330
Published: February 2014
View article titled, <em>In-situ</em> scanning electron microscope observation of electromigration-induced void growth in 30 nm ½ pitch Cu interconnect structures
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Journal Articles

Stress migration risk on electromigration reliability in advanced narrow line copper interconnects

A. Heryanto, K. L. Pey, Y. K. Lim, N. Raghavan, W. Liu, J. Wei, C. L. Gan, J. B. Tan
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 083702 (2011)
https://doi.org/10.1063/1.3651385
Published: October 2011
View article titled, Stress migration risk on electromigration reliability in advanced narrow line copper interconnects
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Journal Articles

Void dynamics in copper-based interconnects

Zung-Sun Choi, Junghoon Lee, Meng Keong Lim, Chee Lip Gan, Carl V. Thompson
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 033505 (2011)
https://doi.org/10.1063/1.3611408
Published: August 2011
View article titled, Void dynamics in copper-based interconnects
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Journal Articles

The effect of stress migration on electromigration in dual damascene copper interconnects

A. Heryanto, K. L. Pey, Y. K. Lim, W. Liu, N. Raghavan, J. Wei, C. L. Gan, M. K. Lim, J. B. Tan
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 013716 (2011)
https://doi.org/10.1063/1.3531393
Published: January 2011
View article titled, The effect of stress migration on electromigration in dual damascene copper interconnects
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Journal Articles

An investigation of electromigration induced void nucleation time statistics in short copper interconnects

V. M. Dwyer
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 103718 (2010)
https://doi.org/10.1063/1.3309744
Published: May 2010
View article titled, An investigation of electromigration induced void nucleation time statistics in short copper interconnects
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Journal Articles

Implications of a threshold failure time and void nucleation on electromigration of copper interconnects

R. G. Filippi, P.-C. Wang, A. Brendler, K. Chanda, J. R. Lloyd
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 103709 (2010)
https://doi.org/10.1063/1.3357161
Published: May 2010
View article titled, Implications of a threshold failure time and void nucleation on electromigration of copper interconnects
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Journal Articles

Analysis of multistate models for electromigration failure

V. M. Dwyer
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 033709 (2010)
https://doi.org/10.1063/1.3262497
Published: February 2010
View article titled, Analysis of multistate models for electromigration failure
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Journal Articles

Phenomenological classification of stress-induced leakage current and time-dependent dielectric breakdown mechanism

Hiroshi Miyazaki, Daisuke Kodama, Naohito Suzumura
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 104103 (2009)
https://doi.org/10.1063/1.3259386
Published: November 2009
View article titled, Phenomenological classification of stress-induced leakage current and time-dependent dielectric breakdown mechanism
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Journal Articles

Stress-induced phenomena in nanosized copper interconnect structures studied by x-ray and electron microscopy

Ehrenfried Zschech, Rene Huebner, Dmytro Chumakov, Oliver Aubel, Daniel Friedrich, Peter Guttmann, Stefan Heim, Gerd Schneider
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 093711 (2009)
https://doi.org/10.1063/1.3254166
Published: November 2009
View article titled, Stress-induced phenomena in nanosized copper interconnect structures studied by x-ray and electron microscopy
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