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Journal Articles

Phosphorus diffusion and deactivation during SiGe oxidation

Chappel S. Thornton, Xiao Shen, Blair Tuttle, Xuebin Li, Mark E. Law, Sokrates T. Pantelides, George T. Wang, Kevin S. Jones
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 135301 (2023)
https://doi.org/10.1063/5.0145730
Published: April 2023
View article titled, Phosphorus diffusion and deactivation during SiGe oxidation
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Journal Articles

Broadband terahertz linear cross-polarization conversion in transmission mode using planar coupled metamaterials

S. Jagan Mohan Rao, Rakesh Sarkar, Ajinkya Punjal, Dipa Ghindani, Dibakar Roy Chowdhury, S. S. Prabhu, Gagan Kumar
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 123102 (2023)
https://doi.org/10.1063/5.0143796
Published: March 2023
View article titled, Broadband terahertz linear cross-polarization conversion in transmission mode using planar coupled metamaterials
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Journal Articles

Real-time time-dependent DFT study of laser-enhanced atomic layer etching of silicon for damage-free nanostructure fabrication

Peizhi Wang, Fengzhou Fang
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 144303 (2022)
https://doi.org/10.1063/5.0109818
Published: October 2022
View article titled, Real-time time-dependent DFT study of laser-enhanced atomic layer etching of silicon for damage-free nanostructure fabrication
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Includes: Supplementary data
Journal Articles

Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes

Wai Yuen Fu, Hoi Wai Choi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 060903 (2022)
https://doi.org/10.1063/5.0089750
Published: August 2022
View article titled, Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes
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Journal Articles

The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer

Jeong-Hwan Park, Wentao Cai, Heajeong Cheong, Yasuhisa Ushida, Da-Hoon Lee, Yuto Ando, Yuta Furusawa, Yoshio Honda, Dong-Seon Lee, Tae-Yeon Seong, Hiroshi Amano
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 153104 (2022)
https://doi.org/10.1063/5.0085384
Published: April 2022
View article titled, The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer
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Includes: Supplementary data
Journal Articles

Distinguishing persistent effects in an undoped GaAs/AlGaAs quantum well by top-gate-dependent illumination

Takafumi Fujita, Ryota Hayashi, Makoto Kohda, Julian Ritzmann, Arne Ludwig, Junsaku Nitta, Andreas D. Wieck, Akira Oiwa
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 234301 (2021)
https://doi.org/10.1063/5.0047558
Published: June 2021
View article titled, Distinguishing persistent effects in an undoped GaAs/AlGaAs quantum well by top-gate-dependent illumination
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Journal Articles

The shift of breakdown voltage for silicon membrane strip detectors resulting from surface avalanche

W. Peng, I. Sabri Alirezaei, N. André, X. Zeng, M. Bouterfa, B. Wang, Y. Zeng, D. Flandre
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 214501 (2021)
https://doi.org/10.1063/5.0049490
Published: June 2021
View article titled, The shift of breakdown voltage for silicon membrane strip detectors resulting from surface avalanche
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Journal Articles

Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures

Aqdas Fariza, Xiaoli Ji, Yaqi Gao, Junxue Ran, Junxi Wang, Tongbo Wei
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 165701 (2021)
https://doi.org/10.1063/5.0046560
Published: April 2021
View article titled, Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures
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Journal Articles

SnS2/Si nanowire vertical heterostructure for high performance ultra-low power broadband photodetector with excellent detectivity

Sourav Das, Kalyan Jyoti Sarkar, Biswajit Pal, Hasmat Mondal, Sourabh Pal, Rabaya Basori, Pallab Banerji
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 053105 (2021)
https://doi.org/10.1063/5.0032604
Published: February 2021
View article titled, SnS<sub>2</sub>/Si nanowire vertical heterostructure for high performance ultra-low power broadband photodetector with excellent detectivity
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Includes: Supplementary data
Journal Articles

Surface and interface effects on the current–voltage characteristic curves of multiwall carbon nanotube-Si hybrid junctions selectively probed through exposure to HF vapors and ppm-NO2

Sonia Freddi, Andrea Casotto, Giovanni Drera, Andrea Tognazzi, Tiziano Freddi, Stefania Pagliara, Francesco De Nicola, Paola Castrucci, Luigi Sangaletti
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 055306 (2021)
https://doi.org/10.1063/5.0033552
Published: February 2021
View article titled, Surface and interface effects on the current–voltage characteristic curves of multiwall carbon nanotube-Si hybrid junctions selectively probed through exposure to HF vapors and ppm-NO<sub>2</sub>
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Journal Articles

Efficient surface passivation using two-step ammonium sulfide based treatment for GaN/AlGaN heterojunction phototransistors

Quan Wen, Shaoji Tang, Hao Jiang
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 045702 (2021)
https://doi.org/10.1063/5.0034922
Published: January 2021
View article titled, Efficient surface passivation using two-step ammonium sulfide based treatment for GaN/AlGaN heterojunction phototransistors
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Journal Articles

Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

Philippe Ferrandis, Mariam El-Khatib, Marie-Anne Jaud, Erwan Morvan, Matthew Charles, Gérard Guillot, Georges Bremond
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 035702 (2019)
https://doi.org/10.1063/1.5055926
Published: January 2019
View article titled, Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation
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Journal Articles

Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors

M. Matys, K. Nishiguchi, B. Adamowicz, J. Kuzmik, T. Hashizume
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 224502 (2018)
https://doi.org/10.1063/1.5056194
Published: December 2018
View article titled, Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors
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Journal Articles

Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors

Abhishek Chatterjee, V. K. Agnihotri, Shailesh K. Khamari, S. Porwal, A. Bose, S. C. Joshi, T. K. Sharma
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 104504 (2018)
https://doi.org/10.1063/1.5042126
Published: September 2018
View article titled, Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors
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Journal Articles

Fully suspended slot waveguide platform

Wen Zhou, Zhenzhou Cheng, Xinru Wu, Xiankai Sun, Hon Ki Tsang
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 063103 (2018)
https://doi.org/10.1063/1.5017780
Published: February 2018
View article titled, Fully suspended slot waveguide platform
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Includes: Supplementary data
Journal Articles

Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

Denis E. Presnov, Ivan V. Bozhev, Andrew V. Miakonkikh, Sergey G. Simakin, Artem S. Trifonov, Vladimir A. Krupenin
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 054503 (2018)
https://doi.org/10.1063/1.5019250
Published: February 2018
View article titled, Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator
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Journal Articles

Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes

Yuan Bu, Hiroyuki Yoshimoto, Naoki Watanabe, Akio Shima
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 244504 (2017)
https://doi.org/10.1063/1.5001370
Published: December 2017
View article titled, Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes
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Journal Articles

Bulk lifetime characterization of corona charged silicon wafers with high resistivity by means of microwave detected photoconductivity

C. R. Engst, M. Rommel, C. Bscheid, I. Eisele, C. Kutter
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 215704 (2017)
https://doi.org/10.1063/1.4993127
Published: December 2017
View article titled, Bulk lifetime characterization of corona charged silicon wafers with high resistivity by means of microwave detected photoconductivity
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Journal Articles

Electrically-inactive phosphorus re-distribution during low temperature annealing

Ana Peral, Amanda Youssef, Amir Dastgheib-Shirazi, Austin Akey, Ian Marius Peters, Giso Hahn, Tonio Buonassisi, Carlos del Cañizo
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 161535 (2018)
https://doi.org/10.1063/1.5002627
Published: December 2017
View article titled, Electrically-inactive phosphorus re-distribution during low temperature annealing
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Journal Articles

Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model

Tai-Chen Kuo, Tzu-Lang Shih, Yin-Hsien Su, Wen-Hsi Lee, Michael Ira Current, Seiji Samukawa
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 161517 (2018)
https://doi.org/10.1063/1.4985852
Published: October 2017
View article titled, Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model
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