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Journal Articles

Nanoscale electrical conductance and leakage currents in etched and selective-area regrown GaAs pn junctions

Open Access
Tae-Hyeon Kim, Alec M. Skipper, Seth R. Bank, Edward T. Yu
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 075702 (2025)
https://doi.org/10.1063/5.0240080
Published: February 2025
View articletitled, Nanoscale electrical conductance and leakage currents in etched and selective-area regrown GaAs pn junctions
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Journal Articles

Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain

Open Access
Takuya Hoshi, Yuki Yoshiya, Hiroki Sugiyama, Fumito Nakajima
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 145703 (2024)
https://doi.org/10.1063/5.0194197
Published: April 2024
View articletitled, Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain
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Journal Articles

Demonstration of MOCVD based in situ etching of β-Ga2O3 using TEGa

Open Access
Abishek Katta, Fikadu Alema, William Brand, Advait Gilankar, Andrei Osinsky, Nidhin Kurian Kalarickal
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 075705 (2024)
https://doi.org/10.1063/5.0195361
Published: February 2024
View articletitled, Demonstration of MOCVD based in situ etching of β-Ga2O3 using TEGa
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Journal Articles

Phosphorus diffusion and deactivation during SiGe oxidation

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Chappel S. Thornton, Xiao Shen, Blair Tuttle, Xuebin Li, Mark E. Law, Sokrates T. Pantelides, George T. Wang, Kevin S. Jones
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 135301 (2023)
https://doi.org/10.1063/5.0145730
Published: April 2023
View articletitled, Phosphorus diffusion and deactivation during SiGe oxidation
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Journal Articles

Broadband terahertz linear cross-polarization conversion in transmission mode using planar coupled metamaterials

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S. Jagan Mohan Rao, Rakesh Sarkar, Ajinkya Punjal, Dipa Ghindani, Dibakar Roy Chowdhury, S. S. Prabhu, Gagan Kumar
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 123102 (2023)
https://doi.org/10.1063/5.0143796
Published: March 2023
View articletitled, Broadband terahertz linear cross-polarization conversion in transmission mode using planar coupled metamaterials
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Journal Articles

Real-time time-dependent DFT study of laser-enhanced atomic layer etching of silicon for damage-free nanostructure fabrication

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Peizhi Wang, Fengzhou Fang
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 144303 (2022)
https://doi.org/10.1063/5.0109818
Published: October 2022
View articletitled, Real-time time-dependent DFT study of laser-enhanced atomic layer etching of silicon for damage-free nanostructure fabrication
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Includes: Supplementary data
Journal Articles

Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes

Free
Wai Yuen Fu, Hoi Wai Choi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 060903 (2022)
https://doi.org/10.1063/5.0089750
Published: August 2022
View articletitled, Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes
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Journal Articles

The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer

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Jeong-Hwan Park, Wentao Cai, Heajeong Cheong, Yasuhisa Ushida, Da-Hoon Lee, Yuto Ando, Yuta Furusawa, Yoshio Honda, Dong-Seon Lee, Tae-Yeon Seong, Hiroshi Amano
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 153104 (2022)
https://doi.org/10.1063/5.0085384
Published: April 2022
View articletitled, The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer
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Includes: Supplementary data
Journal Articles

Distinguishing persistent effects in an undoped GaAs/AlGaAs quantum well by top-gate-dependent illumination

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Takafumi Fujita, Ryota Hayashi, Makoto Kohda, Julian Ritzmann, Arne Ludwig, Junsaku Nitta, Andreas D. Wieck, Akira Oiwa
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 234301 (2021)
https://doi.org/10.1063/5.0047558
Published: June 2021
View articletitled, Distinguishing persistent effects in an undoped GaAs/AlGaAs quantum well by top-gate-dependent illumination
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Journal Articles

The shift of breakdown voltage for silicon membrane strip detectors resulting from surface avalanche

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W. Peng, I. Sabri Alirezaei, N. André, X. Zeng, M. Bouterfa, B. Wang, Y. Zeng, D. Flandre
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 214501 (2021)
https://doi.org/10.1063/5.0049490
Published: June 2021
View articletitled, The shift of breakdown voltage for silicon membrane strip detectors resulting from surface avalanche
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Journal Articles

Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures

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Aqdas Fariza, Xiaoli Ji, Yaqi Gao, Junxue Ran, Junxi Wang, Tongbo Wei
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 165701 (2021)
https://doi.org/10.1063/5.0046560
Published: April 2021
View articletitled, Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures
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Journal Articles

SnS2/Si nanowire vertical heterostructure for high performance ultra-low power broadband photodetector with excellent detectivity

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Sourav Das, Kalyan Jyoti Sarkar, Biswajit Pal, Hasmat Mondal, Sourabh Pal, Rabaya Basori, Pallab Banerji
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 053105 (2021)
https://doi.org/10.1063/5.0032604
Published: February 2021
View articletitled, SnS2/Si nanowire vertical heterostructure for high performance ultra-low power broadband photodetector with excellent detectivity
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Includes: Supplementary data
Journal Articles

Surface and interface effects on the current–voltage characteristic curves of multiwall carbon nanotube-Si hybrid junctions selectively probed through exposure to HF vapors and ppm-NO2

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Sonia Freddi, Andrea Casotto, Giovanni Drera, Andrea Tognazzi, Tiziano Freddi, Stefania Pagliara, Francesco De Nicola, Paola Castrucci, Luigi Sangaletti
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 055306 (2021)
https://doi.org/10.1063/5.0033552
Published: February 2021
View articletitled, Surface and interface effects on the current–voltage characteristic curves of multiwall carbon nanotube-Si hybrid junctions selectively probed through exposure to HF vapors and ppm-NO2
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Journal Articles

Efficient surface passivation using two-step ammonium sulfide based treatment for GaN/AlGaN heterojunction phototransistors

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Quan Wen, Shaoji Tang, Hao Jiang
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 045702 (2021)
https://doi.org/10.1063/5.0034922
Published: January 2021
View articletitled, Efficient surface passivation using two-step ammonium sulfide based treatment for GaN/AlGaN heterojunction phototransistors
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Journal Articles

Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

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Philippe Ferrandis, Mariam El-Khatib, Marie-Anne Jaud, Erwan Morvan, Matthew Charles, Gérard Guillot, Georges Bremond
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 035702 (2019)
https://doi.org/10.1063/1.5055926
Published: January 2019
View articletitled, Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation
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Journal Articles

Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors

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M. Matys, K. Nishiguchi, B. Adamowicz, J. Kuzmik, T. Hashizume
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 224502 (2018)
https://doi.org/10.1063/1.5056194
Published: December 2018
View articletitled, Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors
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Journal Articles

Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors

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Abhishek Chatterjee, V. K. Agnihotri, Shailesh K. Khamari, S. Porwal, A. Bose, S. C. Joshi, T. K. Sharma
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 104504 (2018)
https://doi.org/10.1063/1.5042126
Published: September 2018
View articletitled, Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors
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Journal Articles

Fully suspended slot waveguide platform

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Wen Zhou, Zhenzhou Cheng, Xinru Wu, Xiankai Sun, Hon Ki Tsang
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 063103 (2018)
https://doi.org/10.1063/1.5017780
Published: February 2018
View articletitled, Fully suspended slot waveguide platform
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Includes: Supplementary data
Journal Articles

Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

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Denis E. Presnov, Ivan V. Bozhev, Andrew V. Miakonkikh, Sergey G. Simakin, Artem S. Trifonov, Vladimir A. Krupenin
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 054503 (2018)
https://doi.org/10.1063/1.5019250
Published: February 2018
View articletitled, Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator
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Journal Articles

Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes

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Yuan Bu, Hiroyuki Yoshimoto, Naoki Watanabe, Akio Shima
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 244504 (2017)
https://doi.org/10.1063/1.5001370
Published: December 2017
View articletitled, Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes
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