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Journal Articles
Nanoscale electrical conductance and leakage currents in etched and selective-area regrown GaAs pn junctions
Open Access
Journal:
Journal of Applied Physics
J. Appl. Phys. 137, 075702 (2025)
Published: February 2025
Journal Articles
Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain
Open Access
Journal:
Journal of Applied Physics
J. Appl. Phys. 135, 145703 (2024)
Published: April 2024
Journal Articles
Abishek Katta, Fikadu Alema, William Brand, Advait Gilankar, Andrei Osinsky, Nidhin Kurian Kalarickal
Journal:
Journal of Applied Physics
J. Appl. Phys. 135, 075705 (2024)
Published: February 2024
Journal Articles
Phosphorus diffusion and deactivation during SiGe oxidation
Available to PurchaseChappel S. Thornton, Xiao Shen, Blair Tuttle, Xuebin Li, Mark E. Law, Sokrates T. Pantelides, George T. Wang, Kevin S. Jones
Journal:
Journal of Applied Physics
J. Appl. Phys. 133, 135301 (2023)
Published: April 2023
Journal Articles
Broadband terahertz linear cross-polarization conversion in transmission mode using planar coupled metamaterials
Available to PurchaseS. Jagan Mohan Rao, Rakesh Sarkar, Ajinkya Punjal, Dipa Ghindani, Dibakar Roy Chowdhury, S. S. Prabhu, Gagan Kumar
Journal:
Journal of Applied Physics
J. Appl. Phys. 133, 123102 (2023)
Published: March 2023
Journal Articles
Real-time time-dependent DFT study of laser-enhanced atomic layer etching of silicon for damage-free nanostructure fabrication
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 132, 144303 (2022)
Published: October 2022
Includes: Supplementary data
Journal Articles
Journal Articles
The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer
Available to PurchaseJeong-Hwan Park, Wentao Cai, Heajeong Cheong, Yasuhisa Ushida, Da-Hoon Lee, Yuto Ando, Yuta Furusawa, Yoshio Honda, Dong-Seon Lee, Tae-Yeon Seong, Hiroshi Amano
Journal:
Journal of Applied Physics
J. Appl. Phys. 131, 153104 (2022)
Published: April 2022
Includes: Supplementary data
Journal Articles
Distinguishing persistent effects in an undoped GaAs/AlGaAs quantum well by top-gate-dependent illumination
Available to PurchaseTakafumi Fujita, Ryota Hayashi, Makoto Kohda, Julian Ritzmann, Arne Ludwig, Junsaku Nitta, Andreas D. Wieck, Akira Oiwa
Journal:
Journal of Applied Physics
J. Appl. Phys. 129, 234301 (2021)
Published: June 2021
Journal Articles
The shift of breakdown voltage for silicon membrane strip detectors resulting from surface avalanche
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 129, 214501 (2021)
Published: June 2021
Journal Articles
Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 129, 165701 (2021)
Published: April 2021
Journal Articles
SnS2/Si nanowire vertical heterostructure for high performance ultra-low power broadband photodetector with excellent detectivity
Available to PurchaseSourav Das, Kalyan Jyoti Sarkar, Biswajit Pal, Hasmat Mondal, Sourabh Pal, Rabaya Basori, Pallab Banerji
Journal:
Journal of Applied Physics
J. Appl. Phys. 129, 053105 (2021)
Published: February 2021
Includes: Supplementary data
Journal Articles
Surface and interface effects on the current–voltage characteristic curves of multiwall carbon nanotube-Si hybrid junctions selectively probed through exposure to HF vapors and ppm-NO2
Available to PurchaseSonia Freddi, Andrea Casotto, Giovanni Drera, Andrea Tognazzi, Tiziano Freddi, Stefania Pagliara, Francesco De Nicola, Paola Castrucci, Luigi Sangaletti
Journal:
Journal of Applied Physics
J. Appl. Phys. 129, 055306 (2021)
Published: February 2021
Journal Articles
Efficient surface passivation using two-step ammonium sulfide based treatment for GaN/AlGaN heterojunction phototransistors
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 129, 045702 (2021)
Published: January 2021
Journal Articles
Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation
Available to PurchasePhilippe Ferrandis, Mariam El-Khatib, Marie-Anne Jaud, Erwan Morvan, Matthew Charles, Gérard Guillot, Georges Bremond
Journal:
Journal of Applied Physics
J. Appl. Phys. 125, 035702 (2019)
Published: January 2019
Journal Articles
Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 124, 224502 (2018)
Published: December 2018
Journal Articles
Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors
Available to PurchaseAbhishek Chatterjee, V. K. Agnihotri, Shailesh K. Khamari, S. Porwal, A. Bose, S. C. Joshi, T. K. Sharma
Journal:
Journal of Applied Physics
J. Appl. Phys. 124, 104504 (2018)
Published: September 2018
Journal Articles
Fully suspended slot waveguide platform
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 123, 063103 (2018)
Published: February 2018
Includes: Supplementary data
Journal Articles
Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator
Available to PurchaseDenis E. Presnov, Ivan V. Bozhev, Andrew V. Miakonkikh, Sergey G. Simakin, Artem S. Trifonov, Vladimir A. Krupenin
Journal:
Journal of Applied Physics
J. Appl. Phys. 123, 054503 (2018)
Published: February 2018
Journal Articles
Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 122, 244504 (2017)
Published: December 2017
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