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Journal Articles

Electrical properties and parameter analysis of all-solid-state LaZrO/InO electric double-layer transistors

Hiromi Nakazawa, Hiroshi Ishii, Yuzuru Takamura
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 024502 (2023)
https://doi.org/10.1063/5.0152597
Published: July 2023
View article titled, Electrical properties and parameter analysis of all-solid-state LaZrO/InO electric double-layer transistors
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Journal Articles

Metallization considerations for carbon nanotube device optimization

Damon B. Farmer
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 104301 (2022)
https://doi.org/10.1063/5.0098970
Published: September 2022
View article titled, Metallization considerations for carbon nanotube device optimization
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Journal Articles

Leakage current reduction of normally off hydrogen-terminated diamond field effect transistor utilizing dual-barrier Schottky gate

Genqiang Chen, Wei Wang, Shi He, Juan Wang, Shumiao Zhang, Minghui Zhang, Hong-Xing Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 015702 (2022)
https://doi.org/10.1063/5.0098804
Published: July 2022
View article titled, Leakage current reduction of normally off hydrogen-terminated diamond field effect transistor utilizing dual-barrier Schottky gate
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Journal Articles

Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation

Nachiket R. Naik, Austin J. Minnich
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 174504 (2021)
https://doi.org/10.1063/5.0063178
Published: November 2021
View article titled, Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation
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Journal Articles

Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance

Jakob Leise, Jakob Pruefer, Ghader Darbandy, Aristeidis Nikolaou, Michele Giorgio, Mario Caironi, Ute Zschieschang, Hagen Klauk, Alexander Kloes, Benjamin Iñiguez, James W. Borchert
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 125501 (2021)
https://doi.org/10.1063/5.0062146
Published: September 2021
View article titled, Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance
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Includes: Supplementary data
Journal Articles

Correlation between sidewall surface states and off-state breakdown voltage of AlGaN/GaN HFETs

Mehrnegar Aghayan, Pouya Valizadeh
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 115703 (2021)
https://doi.org/10.1063/5.0060688
Published: September 2021
View article titled, Correlation between sidewall surface states and off-state breakdown voltage of AlGaN/GaN HFETs
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Journal Articles

Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications

Nayana Remesh, Hareesh Chandrasekar, Anirudh Venugopalrao, Srinivasan Raghavan, Muralidharan Rangarajan, Digbijoy N. Nath
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 075702 (2021)
https://doi.org/10.1063/5.0045952
Published: August 2021
View article titled, Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications
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Journal Articles

On–off ratio improvement in organic electrochemical transistors from addition of a PMMA layer at the electrolyte dielectric/semiconductor interface

Elton A. de Moura, Marcos Luginieski, José P. M. Serbena, Keli F. Seidel
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 154502 (2021)
https://doi.org/10.1063/5.0041376
Published: April 2021
View article titled, On–off ratio improvement in organic electrochemical transistors from addition of a PMMA layer at the electrolyte dielectric/semiconductor interface
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Includes: Supplementary data
Journal Articles

Transistor-enabled reciprocity breaking in a mechanical lattice yielding giant isolation and unidirectional propagation

Sai Aditya Raman Kuchibhatla, Michael J. Leamy
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 124505 (2021)
https://doi.org/10.1063/5.0042449
Published: March 2021
View article titled, Transistor-enabled reciprocity breaking in a mechanical lattice yielding giant isolation and unidirectional propagation
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Journal Articles

Reconfigurable thin-film transistors based on a parallel array of Si-nanowires

Dae-Young Jeon, So Jeong Park, Sebastian Pregl, Thomas Mikolajick, Walter M. Weber
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 124504 (2021)
https://doi.org/10.1063/5.0036029
Published: March 2021
View article titled, Reconfigurable thin-film transistors based on a parallel array of Si-nanowires
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Includes: Supplementary data
Journal Articles

Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors

Kenji Ito, Kazuyoshi Tomita, Daigo Kikuta, Masahiro Horita, Tetsuo Narita
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 084502 (2021)
https://doi.org/10.1063/5.0040700
Published: February 2021
View article titled, Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors
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Journal Articles

A predictive model for high-frequency operation of two-dimensional transistors from first-principles

Biswapriyo Das, Santanu Mahapatra
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 234502 (2020)
https://doi.org/10.1063/5.0030633
Published: December 2020
View article titled, A predictive model for high-frequency operation of two-dimensional transistors from first-principles
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Includes: Supplementary data
Journal Articles

Experimental and modeling study of 1/f noise in multilayer MoS2 and MoSe2 field-effect transistors

Jiseok Kwon, Collin J. Delker, C. Thomas Harris, Suprem R. Das, David B. Janes
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 094501 (2020)
https://doi.org/10.1063/5.0014759
Published: September 2020
View article titled, Experimental and modeling study of 1/<em>f</em> noise in multilayer MoS<sub>2</sub> and MoSe<sub>2</sub> field-effect transistors
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Includes: Supplementary data
Journal Articles

Extraction of intrinsic field-effect mobility of graphene considering effects of gate-bias-induced contact modulation

Chang-Ju Lee, Honghwi Park, Jaewoon Kang, Junyeong Lee, Muhan Choi, Hongsik Park
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 185105 (2020)
https://doi.org/10.1063/1.5128050
Published: May 2020
View article titled, Extraction of intrinsic field-effect mobility of graphene considering effects of gate-bias-induced contact modulation
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Includes: Supplementary data
Journal Articles

Interface charge engineering in AlTiO/AlGaN/GaN metal–insulator–semiconductor devices

Duong Dai Nguyen, Toshi-kazu Suzuki
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 094501 (2020)
https://doi.org/10.1063/1.5141399
Published: March 2020
View article titled, Interface charge engineering in AlTiO/AlGaN/GaN metal–insulator–semiconductor devices
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Journal Articles

Hints of tunnel diode-like transport in a gated heterojunction

Flavia Viola Di Girolamo
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 075501 (2020)
https://doi.org/10.1063/1.5139438
Published: February 2020
View article titled, Hints of tunnel diode-like transport in a gated heterojunction
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Journal Articles

High-transconductance indium oxide transistors with a lanthanum-zirconium gate oxide characteristic of an electrolyte

Jinwang Li, Hirokazu Tsukada, Takaaki Miyasako, Phan Trong Tue, Kazuhiro Akiyama, Hiromi Nakazawa, Yuzuru Takamura, Tadaoki Mitani, Tatsuya Shimoda
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 064504 (2020)
https://doi.org/10.1063/1.5119210
Published: February 2020
View article titled, High-transconductance indium oxide transistors with a lanthanum-zirconium gate oxide characteristic of an electrolyte
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Includes: Supplementary data
Journal Articles

Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In0.53Ga0.47As n-channel FinFETs

Aqyan A. Bhatti, Dax M. Crum, Amithraj Valsaraj, Leonard F. Register, Sanjay K. Banerjee
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 105705 (2019)
https://doi.org/10.1063/1.5096391
Published: September 2019
View article titled, Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In<sub>0.53</sub>Ga<sub>0.47</sub>As n-channel FinFETs
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Journal Articles

Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors

M. Matys, K. Nishiguchi, B. Adamowicz, J. Kuzmik, T. Hashizume
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 224502 (2018)
https://doi.org/10.1063/1.5056194
Published: December 2018
View article titled, Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors
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Journal Articles

An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

Kexin Li, Shaloo Rakheja
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 184501 (2018)
https://doi.org/10.1063/1.5025339
Published: May 2018
View article titled, An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors
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