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Journal Articles

Optimization of gold germanium (Au0.17Ge0.83) thin films for high sensitivity resistance thermometry

Ethan A. Scott, Christopher M. Smyth, Manish K. Singh, Tzu-Ming Lu, Peter Sharma, Douglas Pete, John Watt, C. Thomas Harris
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 065103 (2022)
https://doi.org/10.1063/5.0099182
Published: August 2022
View article titled, Optimization of gold germanium (Au<sub>0.17</sub>Ge<sub>0.83</sub>) thin films for high sensitivity resistance thermometry
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Includes: Supplementary data
Journal Articles

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

Y. Li, G. I. Ng, S. Arulkumaran, G. Ye, Z. H. Liu, K. Ranjan, K. S. Ang
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 044504 (2017)
https://doi.org/10.1063/1.4974959
Published: January 2017
View article titled, Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
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Journal Articles

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

Johannes Peter Seif, Deneb Menda, Antoine Descoeudres, Loris Barraud, Orhan Özdemir, Christophe Ballif, Stefaan De Wolf
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 054501 (2016)
https://doi.org/10.1063/1.4959988
Published: August 2016
View article titled, Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance
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Journal Articles

Temperature dependence of photoconversion efficiency in silicon heterojunction solar cells: Theory vs experiment

A. V. Sachenko, Yu. V. Kryuchenko, V. P. Kostylyov, A. V. Bobyl, E. I. Terukov, S. N. Abolmasov, A. S. Abramov, D. A. Andronikov, M. Z. Shvarts, I. O. Sokolovskyi, M. Evstigneev
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 225702 (2016)
https://doi.org/10.1063/1.4953384
Published: June 2016
View article titled, Temperature dependence of photoconversion efficiency in silicon heterojunction solar cells: Theory vs experiment
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Journal Articles

Temperature dependence of hydrogenated amorphous silicon solar cell performances

Y. Riesen, M. Stuckelberger, F.-J. Haug, C. Ballif, N. Wyrsch
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 044505 (2016)
https://doi.org/10.1063/1.4940392
Published: January 2016
View article titled, Temperature dependence of hydrogenated amorphous silicon solar cell performances
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Journal Articles

Modeling the spectral shape of InGaAlP-based red light-emitting diodes

Anna Vaskuri, Hans Baumgartner, Petri Kärhä, György Andor, Erkki Ikonen
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 203103 (2015)
https://doi.org/10.1063/1.4936322
Published: November 2015
View article titled, Modeling the spectral shape of InGaAlP-based red light-emitting diodes
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Journal Articles

Temperature dependence of the current in Schottky-barrier source-gated transistors

R. A. Sporea, M. Overy, J. M. Shannon, S. R. P. Silva
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 184502 (2015)
https://doi.org/10.1063/1.4921114
Published: May 2015
View article titled, Temperature dependence of the current in Schottky-barrier source-gated transistors
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Includes: Supplementary data
Journal Articles

Temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P

Jennifer S. L. Ong, Jo S. Ng, Andrey B. Krysa, John P. R. David
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 064507 (2014)
https://doi.org/10.1063/1.4865743
Published: February 2014
View article titled, Temperature dependence of avalanche multiplication and breakdown voltage in Al<sub>0.52</sub>In<sub>0.48</sub>P
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Journal Articles

Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells

Johannes Peter Seif, Antoine Descoeudres, Miha Filipič, Franc Smole, Marko Topič, Zachary Charles Holman, Stefaan De Wolf, Christophe Ballif
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 024502 (2014)
https://doi.org/10.1063/1.4861404
Published: January 2014
View article titled, Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells
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Journal Articles

Modelling the inhomogeneous SiC Schottky interface

P. M. Gammon, A. Pérez-Tomás, V. A. Shah, O. Vavasour, E. Donchev, J. S. Pang, M. Myronov, C. A. Fisher, M. R. Jennings, D. R. Leadley, P. A. Mawby
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 223704 (2013)
https://doi.org/10.1063/1.4842096
Published: December 2013
View article titled, Modelling the inhomogeneous SiC Schottky interface
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Journal Articles

The effect of the temperature-dependent nonlinearities on the temperature stability of micromechanical resonators

Hyung Kyu Lee, Renata Melamud, Bongsang Kim, Saurabh Chandorkar, James C. Salvia, Thomas W. Kenny
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 153513 (2013)
https://doi.org/10.1063/1.4825327
Published: October 2013
View article titled, The effect of the temperature-dependent nonlinearities on the temperature stability of micromechanical resonators
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Journal Articles

Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes

Dawei Yan, Jinping Jiao, Jian Ren, Guofeng Yang, Xiaofeng Gu
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 144511 (2013)
https://doi.org/10.1063/1.4824296
Published: October 2013
View article titled, Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes
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Journal Articles

Analysis of electroluminescence images in small-area circular CdTe solar cells

Matevž Bokalič, John Raguse, James R. Sites, Marko Topič
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 123102 (2013)
https://doi.org/10.1063/1.4820392
Published: September 2013
View article titled, Analysis of electroluminescence images in small-area circular CdTe solar cells
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Journal Articles

Self-heating and athermal effects on the electroluminescence spectral modulation of an AlGaInP light-emitting diode

Z. Vaitonis, P. Vitta, V. Jakštas, A. Žukauskas
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 073103 (2011)
https://doi.org/10.1063/1.3643005
Published: October 2011
View article titled, Self-heating and athermal effects on the electroluminescence spectral modulation of an AlGaInP light-emitting diode
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Journal Articles

Interface recombination in heterojunction solar cells: Influence of buffer layer thickness

Helena Wilhelm, Hans-Werner Schock, Roland Scheer
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 084514 (2011)
https://doi.org/10.1063/1.3554409
Published: April 2011
View article titled, Interface recombination in heterojunction solar cells: Influence of buffer layer thickness
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Journal Articles

Understanding junction breakdown in multicrystalline solar cells

Otwin Breitenstein, Jan Bauer, Karsten Bothe, Wolfram Kwapil, Dominik Lausch, Uwe Rau, Jan Schmidt, Matthias Schneemann, Martin C. Schubert, Jan-Martin Wagner, Wilhelm Warta
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 071101 (2011)
https://doi.org/10.1063/1.3562200
Published: April 2011
View article titled, Understanding junction breakdown in multicrystalline solar cells
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Journal Articles

Analysis of the forward and reverse bias I-V characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range

İlke Taşçıoğlu, Umut Aydemir, Şemsettin Altındal, Barış Kınacı, Süleyman Özçelik
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 054502 (2011)
https://doi.org/10.1063/1.3552599
Published: March 2011
View article titled, Analysis of the forward and reverse bias <em>I-V</em> characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range
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Journal Articles

On temperature-dependent experimental I - V and C - V data of Ni / n -GaN Schottky contacts

Nezir Yıldırım, Kadir Ejderha, Abdulmecit Turut
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 114506 (2010)
https://doi.org/10.1063/1.3517810
Published: December 2010
View article titled, On temperature-dependent experimental I - V and C - V data of Ni / n -GaN Schottky contacts
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Journal Articles

The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer

İlke Taşçıoğlu, Umut Aydemir, Şemsettin Altındal
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 064506 (2010)
https://doi.org/10.1063/1.3468376
Published: September 2010
View article titled, The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer
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Journal Articles

Temperature dependence of buried channel ion sensitive field effect transistors

Roman Novitski, Hila Einati, Yosi Shacham-Diamand
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 094501 (2009)
https://doi.org/10.1063/1.3247577
Published: November 2009
View article titled, Temperature dependence of buried channel ion sensitive field effect transistors
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