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Journal Articles

Strain engineering in 2D FETs: Physics, status, and prospects

Open Access
Ankit Kumar, Lin Xu, Arnab Pal, Kunjesh Agashiwala, Kamyar Parto, Wei Cao, Kaustav Banerjee
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 090901 (2024)
https://doi.org/10.1063/5.0211555
Published: September 2024
View articletitled, Strain engineering in 2D FETs: Physics, status, and prospects
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Journal Articles

Small sized of anion doping effect on semiconducting single-walled carbon nanotube network for field-effect transistors

Open Access
Dongseong Yang, Yina Moon, Nara Han, Minwoo Lee, Jeongwoo Beak, Geon Chang Song, Seung-Hoon Lee, Dong-Yu Kim
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 045701 (2024)
https://doi.org/10.1063/5.0203757
Published: July 2024
View articletitled, Small sized of anion doping effect on semiconducting single-walled carbon nanotube network for field-effect transistors
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Journal Articles

Modeling of non-intrinsic noise in nanometer metal oxide semiconductor field effect transistors

Open Access
Xiaofei Jia, Qun Wei, Wenpeng Zhang, Liang He, Zhenhua Wu
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 035704 (2024)
https://doi.org/10.1063/5.0180749
Published: January 2024
View articletitled, Modeling of non-intrinsic noise in nanometer metal oxide semiconductor field effect transistors
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Journal Articles

Low voltage cold and hot switching in nanoswitches cleaned by in situ oxygen plasma can achieve low stable contact resistance

Open Access
Deepak Kumar, Casey M. Walker, Maarten P. de Boer
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 025301 (2024)
https://doi.org/10.1063/5.0179167
Published: January 2024
View articletitled, Low voltage cold and hot switching in nanoswitches cleaned by in situ oxygen plasma can achieve low stable contact resistance
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Journal Articles

Comparison of contact metals evaporated onto monolayer molybdenum disulfide

Editor’s PickFree
A. Mazzoni, R. Burke, M. Chin, S. Najmaei, M. Dubey, N. Goldsman, K. Daniels
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 224305 (2022)
https://doi.org/10.1063/5.0124105
Published: December 2022
View articletitled, Comparison of contact metals evaporated onto monolayer molybdenum disulfide
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Includes: Supplementary data
Journal Articles

Schottky–Mott limit in graphene inserted 2D semiconductor–metal interfaces

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Sanchali Mitra, Santanu Mahapatra
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 145301 (2022)
https://doi.org/10.1063/5.0106620
Published: October 2022
View articletitled, Schottky–Mott limit in graphene inserted 2D semiconductor–metal interfaces
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Includes: Supplementary data
Journal Articles

Modeling of thin-film transistor device characteristics based on fundamental charge transport physics

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Xiao Wang, Ananth Dodabalapur
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 044501 (2022)
https://doi.org/10.1063/5.0083876
Published: July 2022
View articletitled, Modeling of thin-film transistor device characteristics based on fundamental charge transport physics
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Includes: Supplementary data
Journal Articles

On the minimum thickness of doped electron/hole transport layers in organic semiconductor devices

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D. Oussalah, R. Clerc, J. Baylet, R. Paquet, C. Sésé, C. Laugier, B. Racine, J. Vaillant
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 125502 (2021)
https://doi.org/10.1063/5.0060429
Published: September 2021
View articletitled, On the minimum thickness of doped electron/hole transport layers in organic semiconductor devices
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Journal Articles

Contacts between monolayer black phosphorene and metal electrodes: Ohmic, Schottky, and their regulating strategy

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Kehua Zhong, Jiaxin Li, Guigui Xu, Yanmin Yang, Jian-Min Zhang, Zhigao Huang
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 124305 (2021)
https://doi.org/10.1063/5.0061876
Published: September 2021
View articletitled, Contacts between monolayer black phosphorene and metal electrodes: Ohmic, Schottky, and their regulating strategy
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Journal Articles

Carrier-injection and succeeding pre-channel formation in organic thin-film transistor observed with time-domain reflectometry

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Masatoshi Sakai, Weisong Liao, Yugo Okada, Kazuhiro Kudo
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 085502 (2020)
https://doi.org/10.1063/5.0011150
Published: August 2020
View articletitled, Carrier-injection and succeeding pre-channel formation in organic thin-film transistor observed with time-domain reflectometry
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Journal Articles

A theory of contact resistance under AC conditions

Free
Foivos Antoulinakis, Y. Y. Lau
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 125107 (2020)
https://doi.org/10.1063/1.5142511
Published: March 2020
View articletitled, A theory of contact resistance under AC conditions
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Journal Articles

Lateral transport in silicon solar cells

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Jan Haschke, Gabriel Christmann, Christoph Messmer, Martin Bivour, Mathieu Boccard, Christophe Ballif
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 114501 (2020)
https://doi.org/10.1063/1.5139416
Published: March 2020
View articletitled, Lateral transport in silicon solar cells
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Journal Articles

Passivation, conductivity, and selectivity in solar cell contacts: Concepts and simulations based on a unified partial-resistances framework

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Arthur Onno, Christopher Chen, Priyaranga Koswatta, Mathieu Boccard, Zachary C. Holman
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 183103 (2019)
https://doi.org/10.1063/1.5117201
Published: November 2019
View articletitled, Passivation, conductivity, and selectivity in solar cell contacts: Concepts and simulations based on a unified partial-resistances framework
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Includes: Supplementary data
Journal Articles

Electrical resistance of metal contact to Bi2Te3 based thermoelectric legs

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L. M. Vikhor, L. I. Anatychuk, P. V. Gorskyi
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 164503 (2019)
https://doi.org/10.1063/1.5117183
Published: October 2019
View articletitled, Electrical resistance of metal contact to Bi2Te3 based thermoelectric legs
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Journal Articles

A virtual-source emission-diffusion I-V model for ultra-thin black phosphorus field-effect transistors

Free
Elahe Yarmoghaddam, Nazila Haratipour, Steven J. Koester, Shaloo Rakheja
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 165706 (2019)
https://doi.org/10.1063/1.5064474
Published: April 2019
View articletitled, A virtual-source emission-diffusion I-V model for ultra-thin black phosphorus field-effect transistors
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Journal Articles

Anisotropic Corbino conductivity in a magnetic field

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D. V. Nomokonov, A. V. Goran, A. A. Bykov
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 164301 (2019)
https://doi.org/10.1063/1.5085932
Published: April 2019
View articletitled, Anisotropic Corbino conductivity in a magnetic field
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Journal Articles

Electrical contacts of coplanar 2H/1T′ MoTe2 monolayer

Editor’s PickAvailable to Purchase
Aolin Li, Jiangling Pan, Xiongying Dai, Fangping Ouyang
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 075104 (2019)
https://doi.org/10.1063/1.5081936
Published: February 2019
View articletitled, Electrical contacts of coplanar 2H/1T′ MoTe2 monolayer
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Includes: Supplementary data
Journal Articles

Photogating and high gain in ReS2 field-effect transistors

Editor’s PickFree
C. Garcia, N. R. Pradhan, D. Rhodes, L. Balicas, S. A. McGill
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 204306 (2018)
https://doi.org/10.1063/1.5050821
Published: November 2018
View articletitled, Photogating and high gain in ReS2 field-effect transistors
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Journal Articles

Efficient spin injection into graphene through trilayer hBN tunnel barriers

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Johannes Christian Leutenantsmeyer, Josep Ingla-Aynés, Mallikarjuna Gurram, Bart J. van Wees
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 194301 (2018)
https://doi.org/10.1063/1.5050874
Published: November 2018
View articletitled, Efficient spin injection into graphene through trilayer hBN tunnel barriers
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Includes: Supplementary data
Journal Articles

Space-charge and current non-uniformities, and contact resistivity of end-bonded metal contacts to thin heavily doped semiconductor nanowires

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Anvar A. Shukkoor, Shreepad Karmalkar
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 084502 (2018)
https://doi.org/10.1063/1.5041330
Published: August 2018
View articletitled, Space-charge and current non-uniformities, and contact resistivity of end-bonded metal contacts to thin heavily doped semiconductor nanowires
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