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Journal Articles

Effect of TiN electrodes and Gd-doping on HfO₂ structural properties

M. M. Abdallah, E. V. Skopin, F. Fillot, D. Constantin, M. Abusaa, A. Bsiesy

J. Appl. Phys. 136, 234101 (2024)

https://doi.org/10.1063/5.0239456

Published: December 2024

View article titled, Effect of TiN electrodes and Gd-doping on HfO2 structural properties

Journal Articles

Charge carrier recombination in TiO₂ and SrTiO₃ single crystals: Impact of CoO_x cocatalyst loading

Endong Zhang, Toru Takayoshi, Zhenhua Pan, Masashi Kato

J. Appl. Phys. 136, 205303 (2024)

https://doi.org/10.1063/5.0234709

Published: November 2024

View article titled, Charge carrier recombination in TiO2 and SrTiO3 single crystals: Impact of CoOx cocatalyst loading

Journal Articles

Characterization and quantitative understanding of subthreshold swing of Si metal–oxide–semiconductor field effect transistors at cryogenic temperatures

Min-Soo Kang, Kasidit Toprasertpong, Hiroshi Oka, Takahiro Mori, Mitsuru Takenaka, Shinichi Takagi

J. Appl. Phys. 136, 195702 (2024)

https://doi.org/10.1063/5.0233899

Published: November 2024

View article titled, Characterization and quantitative understanding of subthreshold swing of Si metal–oxide–semiconductor field effect transistors at cryogenic temperatures

Journal Articles

Comprehensive study of interface state via the time-dependent second harmonic generation

Libo Zhang, Li Ye, Weiwei Zhao, Chongji Huang, Tao Li, Tai Min, Jinbo Yang, Mingliang Tian, Xuegang Chen

J. Appl. Phys. 136, 065301 (2024)

https://doi.org/10.1063/5.0188344

Published: August 2024

View article titled, Comprehensive study of interface state via the time-dependent second harmonic generation

Journal Articles

Improvement of linearity in trap-rich substrates for radio frequency applications: Which of donor and acceptor trap is the best?

Justine Philippe, Jean-François Robillard, Daniel Gloria, Emmanuel Dubois

J. Appl. Phys. 136, 015702 (2024)

https://doi.org/10.1063/5.0205853

Published: July 2024

View article titled, Improvement of linearity in trap-rich substrates for radio frequency applications: Which of donor and acceptor trap is the best?

Journal Articles

Analysis of interface trap induced ledge in β-Ga₂O₃ based MOS structures using UV-assisted capacitance–voltage measurements

Aditya K. Bhat, Hyun-Seop Kim, Abhishek Mishra, Matthew D. Smith, Michael J. Uren, Martin Kuball

J. Appl. Phys. 135, 195704 (2024)

https://doi.org/10.1063/5.0203022

Published: May 2024

View article titled, Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements

Journal Articles

Optimizing interface properties of HfO₂/Si_0.73Ge_0.27 gate stacks through sulfur passivation and post-deposition annealing

Zhengyang Chen, Zhangsheng Lan, Yiran Lin, Tomonori Nishimura, Choonghyun Lee, Yi Zhao

J. Appl. Phys. 135, 125704 (2024)

https://doi.org/10.1063/5.0195430

Published: March 2024

View article titled, Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing

Journal Articles

New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

J. L. Autran, D. Munteanu

J. Appl. Phys. 134, 175701 (2023)

https://doi.org/10.1063/5.0156698

Published: November 2023

View article titled, New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

Journal Articles

Trap passivation of 4H-SiC/SiO₂ interfaces by nitrogen annealing

Suman Das, Hengfei Gu, Lu Wang, Ayayi Ahyi, Leonard C. Feldman, Eric Garfunkel, Marcelo A. Kuroda, Sarit Dhar

J. Appl. Phys. 133, 215701 (2023)

https://doi.org/10.1063/5.0139185

Published: June 2023

View article titled, Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing

Journal Articles

Electronics with stainless steel: The work functions

F. Marlow, S. Josten, S. Leiting

J. Appl. Phys. 133, 085104 (2023)

https://doi.org/10.1063/5.0142185

Published: February 2023

View article titled, Electronics with stainless steel: The work functions

Journal Articles

Atomic and electronic structures of interfaces between amorphous (Al₂O₃)_1−x(SiO₂)_x and GaN polar surfaces revealed by first-principles simulated annealing technique

Kenta Chokawa, Kenji Shiraishi, Atsushi Oshiyama

J. Appl. Phys. 133, 065301 (2023)

https://doi.org/10.1063/5.0132033

Published: February 2023

View article titled, Atomic and electronic structures of interfaces between amorphous (Al2O3)1−x(SiO2)x and GaN polar surfaces revealed by first-principles simulated annealing technique

Journal Articles

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

P. Fiorenza, L. Maiolo, G. Fortunato, M. Zielinski, F. La Via, F. Giannazzo, F. Roccaforte

J. Appl. Phys. 132, 245701 (2022)

https://doi.org/10.1063/5.0109278

Published: December 2022

View article titled, Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Journal Articles

Enhanced epitaxial growth of Ga₂O₃ using an ultrathin SnO₂ layer

A. Karg, M. Kracht, P. Vogt, A. Messow, N. Braud, J. Schörmann, M. Rohnke, J. Janek, J. Falta, M. Eickhoff

J. Appl. Phys. 132, 195304 (2022)

https://doi.org/10.1063/5.0127232

Published: November 2022

View article titled, Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer

Includes: Supplementary data

Journal Articles

Detection of defect levels in vicinity of Al₂O₃/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method

Masamichi Akazawa, Yuya Tamamura, Takahide Nukariya, Kouta Kubo, Taketomo Sato, Tetsuo Narita, Tetsu Kachi

J. Appl. Phys. 132, 195302 (2022)

https://doi.org/10.1063/5.0109117

Published: November 2022

View article titled, Detection of defect levels in vicinity of Al2O3/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method

Journal Articles

A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy

Kenneth J. Myers, Patrick M. Lenahan, James P. Ashton, Jason T. Ryan

J. Appl. Phys. 132, 115301 (2022)

https://doi.org/10.1063/5.0101852

Published: September 2022

View article titled, A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy

Journal Articles

Experimental and theoretical studies on atomic structures of the interface states at SiO₂/4H-SiC(0001) interface

Yoshiyuki Yamashita, Jun Nara, Efi Dwi Indari, Takahiro Yamasaki, Takahisa Ohno, Ryu Hasunuma

J. Appl. Phys. 131, 215303 (2022)

https://doi.org/10.1063/5.0093267

Published: June 2022

View article titled, Experimental and theoretical studies on atomic structures of the interface states at SiO2/4H-SiC(0001) interface

Journal Articles

Trap dynamics of hot electrons in metal–insulator–metal plasmonic structures for ultra-fast optoelectronics

Abbas Goudarzi, Sahar Behpour, Ravishankar Sundararaman, Oscar N. Garcia, Yuri Rostovtsev

J. Appl. Phys. 131, 194501 (2022)

https://doi.org/10.1063/5.0078444

Published: May 2022

View article titled, Trap dynamics of hot electrons in metal–insulator–metal plasmonic structures for ultra-fast optoelectronics

Journal Articles

Persistent near-infrared photoconductivity of ZnO nanoparticles based on plasmonic hot charge carriers

Mohammed A. Ibrahem, Emanuele Verrelli, Fei Cheng, Ali M. Adawi, Jean-Sebastien G. Bouillard, Mary O'Neill

J. Appl. Phys. 131, 103103 (2022)

https://doi.org/10.1063/5.0079006

Published: March 2022

View article titled, Persistent near-infrared photoconductivity of ZnO nanoparticles based on plasmonic hot charge carriers

Includes: Supplementary data

Journal Articles

Probing the surface potential of SiO₂/4H-SiC(0001) by terahertz emission spectroscopy

Hidetoshi Nakanishi, Tatsuhiko Nishimura, Iwao Kawayama, Masayoshi Tonouchi, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

J. Appl. Phys. 130, 115305 (2021)

https://doi.org/10.1063/5.0058962

Published: September 2021

View article titled, Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy

Journal Articles

Understanding terahertz emission properties from a metal–insulator–semiconductor structure upon femtosecond laser illumination

Dongxun Yang, Masayoshi Tonouchi

J. Appl. Phys. 130, 055701 (2021)

https://doi.org/10.1063/5.0055671

Published: August 2021

View article titled, Understanding terahertz emission properties from a metal–insulator–semiconductor structure upon femtosecond laser illumination

Includes: Supplementary data

NARROW

Topics

Effect of TiN electrodes and Gd-doping on HfO₂ structural properties

Charge carrier recombination in TiO₂ and SrTiO₃ single crystals: Impact of CoO_x cocatalyst loading

Characterization and quantitative understanding of subthreshold swing of Si metal–oxide–semiconductor field effect transistors at cryogenic temperatures

Comprehensive study of interface state via the time-dependent second harmonic generation

Improvement of linearity in trap-rich substrates for radio frequency applications: Which of donor and acceptor trap is the best?

Analysis of interface trap induced ledge in β-Ga₂O₃ based MOS structures using UV-assisted capacitance–voltage measurements

Optimizing interface properties of HfO₂/Si_0.73Ge_0.27 gate stacks through sulfur passivation and post-deposition annealing

New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

Trap passivation of 4H-SiC/SiO₂ interfaces by nitrogen annealing

Electronics with stainless steel: The work functions

Atomic and electronic structures of interfaces between amorphous (Al₂O₃)_1−x(SiO₂)_x and GaN polar surfaces revealed by first-principles simulated annealing technique

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Enhanced epitaxial growth of Ga₂O₃ using an ultrathin SnO₂ layer

Detection of defect levels in vicinity of Al₂O₃/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method

A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy

Experimental and theoretical studies on atomic structures of the interface states at SiO₂/4H-SiC(0001) interface

Trap dynamics of hot electrons in metal–insulator–metal plasmonic structures for ultra-fast optoelectronics

Persistent near-infrared photoconductivity of ZnO nanoparticles based on plasmonic hot charge carriers

Probing the surface potential of SiO₂/4H-SiC(0001) by terahertz emission spectroscopy

Understanding terahertz emission properties from a metal–insulator–semiconductor structure upon femtosecond laser illumination

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