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Journal Articles

A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics

Matthew A. Mircovich, John Kouvetakis, José Menéndez
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 124501 (2024)
https://doi.org/10.1063/5.0185557
Published: March 2024
View article titled, A practical theoretical model for Ge-like epitaxial diodes: I. The <em>I</em>–<em>V</em> characteristics
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Journal Articles

Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

Narendra Rai, Ritam Sarkar, Ashutosh Mahajan, Apurba Laha, Dipankar Saha, Swaroop Ganguly
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 244503 (2023)
https://doi.org/10.1063/5.0176944
Published: December 2023
View article titled, Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors
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Journal Articles

Non-thermal to thermal electric field effects induced by DC and current pulses in pure and doped VO2 single crystals

Larisa Patlagan, Idan Sthzeglowski, George M. Reisner, Bertina Fisher
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 235104 (2023)
https://doi.org/10.1063/5.0142659
Published: June 2023
View article titled, Non-thermal to thermal electric field effects induced by DC and current pulses in pure and doped VO<sub>2</sub> single crystals
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Includes: Supplementary data
Journal Articles

The effect of Schottky barrier modulation on conduction and failure mechanisms of an Ag/WOx/p-Si based memristor

Taehoon Park, Hakcheon Jeong, See-On Park, Seok Man Hong, Seokho Seo, Seungwoo Park, Shinhyun Choi
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 075701 (2023)
https://doi.org/10.1063/5.0131593
Published: February 2023
View article titled, The effect of Schottky barrier modulation on conduction and failure mechanisms of an Ag/WO<sub>x</sub>/p-Si based memristor
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Journal Articles

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

F. Mirkhosravi, A. Rashidi, A. T. Elshafiey, J. Gallagher, Z. Abedi, K. Ahn, A. Lintereur, E. K. Mace, M. A. Scarpulla, D. Feezell
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 015704 (2023)
https://doi.org/10.1063/5.0119294
Published: January 2023
View article titled, Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes
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Journal Articles

Nonlinear dielectric properties of polyimide in high AC electric field

Sombel Diaham, Paul Lambkin, Baoxing Chen
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 154101 (2022)
https://doi.org/10.1063/5.0108674
Published: October 2022
View article titled, Nonlinear dielectric properties of polyimide in high AC electric field
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Journal Articles

Electrical and optical properties of (Ta2O5)1−x–(TiO2)x films, x = 0.035, prepared by sputtering of ceramic and mosaic (Ta, Ti) metal targets

Prashant Thapliyal, N. S. Panwar, G. Mohan Rao
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 035304 (2021)
https://doi.org/10.1063/5.0055725
Published: July 2021
View article titled, Electrical and optical properties of (Ta<sub>2</sub>O<sub>5</sub>)<sub>1−x</sub>–(TiO<sub>2</sub>)<sub>x</sub> films, x = 0.035, prepared by sputtering of ceramic and mosaic (Ta, Ti) metal targets
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Journal Articles

Adiabatic theory of SET and RESET transitions

V. G. Karpov
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 114501 (2021)
https://doi.org/10.1063/5.0033558
Published: March 2021
View article titled, Adiabatic theory of SET and RESET transitions
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Journal Articles

Influence of a 3D electric field enhancement model on the Monte Carlo calculation of the dark current in pixel arrays

K. Lemière, C. Inguimbert, T. Nuns
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 164502 (2020)
https://doi.org/10.1063/5.0003613
Published: October 2020
View article titled, Influence of a 3D electric field enhancement model on the Monte Carlo calculation of the dark current in pixel arrays
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Journal Articles

Numerical modeling of nonohmic percolation conduction and Poole–Frenkel laws

Editor’s Pick
Maria Patmiou, V. G. Karpov, G. Serpen, B. R. Weborg
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 035701 (2020)
https://doi.org/10.1063/5.0019844
Published: July 2020
View article titled, Numerical modeling of nonohmic percolation conduction and Poole–Frenkel laws
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Includes: Supplementary data
Journal Articles

Steady-state space-charge-limited current analysis of mobility with negative electric field dependence

Gyanendra Bhattarai, Anthony N. Caruso, Michelle M. Paquette
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 045701 (2018)
https://doi.org/10.1063/1.5038578
Published: July 2018
View article titled, Steady-state space-charge-limited current analysis of mobility with negative electric field dependence
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Journal Articles

The paradox of characteristics of silicon detectors operated at temperature close to liquid helium

V. Eremin, A. Shepelev, E. Verbitskaya, C. Zamantzas, A. Galkin
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 204501 (2018)
https://doi.org/10.1063/1.5029533
Published: May 2018
View article titled, The paradox of characteristics of silicon detectors operated at temperature close to liquid helium
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Journal Articles

V-I characteristics of X-ray conductivity and UV photoconductivity of ZnSe crystals

V. Ya. Degoda, M. Alizadeh, N. O. Kovalenko, N. Yu. Pavlova
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 075702 (2018)
https://doi.org/10.1063/1.5012597
Published: February 2018
View article titled, V-I characteristics of X-ray conductivity and UV photoconductivity of ZnSe crystals
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Journal Articles

Electrical properties of planar AlGaN/GaN Schottky diodes: Role of 2DEG and analysis of non-idealities

Anna Persano, Iolanda Pio, Vittorianna Tasco, Massimo Cuscunà, Adriana Passaseo, Adriano Cola
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 135701 (2017)
https://doi.org/10.1063/1.4979530
Published: April 2017
View article titled, Electrical properties of planar AlGaN/GaN Schottky diodes: Role of 2DEG and analysis of non-idealities
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Journal Articles

Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects

S. N. Grinyaev, A. N. Razzhuvalov
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 154302 (2016)
https://doi.org/10.1063/1.4964876
Published: October 2016
View article titled, Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects
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Journal Articles

Single and double acceptor-levels of a carbon-hydrogen defect in n-type silicon

R. Stübner, L. Scheffler, Vl. Kolkovsky, J. Weber
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 205709 (2016)
https://doi.org/10.1063/1.4952702
Published: May 2016
View article titled, Single and double acceptor-levels of a carbon-hydrogen defect in n-type silicon
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Journal Articles

Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

Jun Hyuk Park, Jong Won Lee, Dong Yeong Kim, Jaehee Cho, E. Fred Schubert, Jungsub Kim, Jinsub Lee, Yong-Il Kim, Youngsoo Park, Jong Kyu Kim
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 023101 (2016)
https://doi.org/10.1063/1.4939504
Published: January 2016
View article titled, Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes
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Journal Articles

An improved model to estimate trapping parameters in polymeric materials and its application on normal and aged low-density polyethylenes

Ning Liu, Miao He, Hisham Alghamdi, George Chen, Mingli Fu, Ruihai Li, Shuai Hou
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 064102 (2015)
https://doi.org/10.1063/1.4928182
Published: August 2015
View article titled, An improved model to estimate trapping parameters in polymeric materials and its application on normal and aged low-density polyethylenes
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Journal Articles

Poole-Frenkel effect and variable-range hopping conduction in metal/YBCO resistive switching devices

A. Schulman, L. F. Lanosa, C. Acha
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 044511 (2015)
https://doi.org/10.1063/1.4927522
Published: July 2015
View article titled, Poole-Frenkel effect and variable-range hopping conduction in metal/YBCO resistive switching devices
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Journal Articles

Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

Herbert Schroeder
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 215103 (2015)
https://doi.org/10.1063/1.4921949
Published: June 2015
View article titled, Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!
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