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Journal Articles

A spin-injected ferroelectric tunnel junction based on spin-dependent screening theory

Open Access
Xingwen Zheng, Xi Zuo, Yuzhen Liu, Chuanhui Chen, Bin Cui, Shusheng Xu
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 144101 (2024)
https://doi.org/10.1063/5.0173184
Published: April 2024
View articletitled, A spin-injected ferroelectric tunnel junction based on spin-dependent screening theory
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Journal Articles

Population congestion in 3-state quantum-dot cellular automata

Open Access
Jacob Retallick, Konrad Walus
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 244301 (2020)
https://doi.org/10.1063/5.0007289
Published: June 2020
View articletitled, Population congestion in 3-state quantum-dot cellular automata
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Journal Articles

Electrical and optical conductivities of hole gas in p-doped bulk III–V semiconductors

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Alestin Mawrie, Pushpajit Halder, Barun Ghosh, Tarun Kanti Ghosh
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 124309 (2016)
https://doi.org/10.1063/1.4963362
Published: September 2016
View articletitled, Electrical and optical conductivities of hole gas in p-doped bulk III–V semiconductors
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Journal Articles

Scattering of carriers by charged dislocations in semiconductors

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Bhavtosh Bansal, Rituparna Ghosh, V. Venkataraman
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 163705 (2013)
https://doi.org/10.1063/1.4803121
Published: April 2013
View articletitled, Scattering of carriers by charged dislocations in semiconductors
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Journal Articles

Monte Carlo study of electron-beam penetration and backscattering in multi-walled carbon nanotube materials: The effect of different scattering models

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Ioanna Kyriakou, Dimitris Emfietzoglou, Alireza Nojeh, Marko Moscovitch
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 084303 (2013)
https://doi.org/10.1063/1.4792231
Published: February 2013
View articletitled, Monte Carlo study of electron-beam penetration and backscattering in multi-walled carbon nanotube materials: The effect of different scattering models
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Journal Articles

High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1−xN

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O. Donmez, M. Gunes, A. Erol, M. C. Arikan, N. Balkan
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 103506 (2011)
https://doi.org/10.1063/1.3660692
Published: November 2011
View articletitled, High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1−xN
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Journal Articles

Near-room-temperature control of magnetization in field effect devices based on La 0.67 Sr 0.33 MnO 3 thin films

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S. Brivio, M. Cantoni, D. Petti, R. Bertacco
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 113906 (2010)
https://doi.org/10.1063/1.3516283
Published: December 2010
View articletitled, Near-room-temperature control of magnetization in field effect devices based on La 0.67 Sr 0.33 MnO 3 thin films
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Journal Articles

Evolution of electron states at an n -type InSb surface in a depletion-layer formation process: Effect of nonparabolicity of the conduction-band dispersion

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Noboru Takeshita, Takeshi Inaoka
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 033702 (2010)
https://doi.org/10.1063/1.3294641
Published: February 2010
View articletitled, Evolution of electron states at an n -type InSb surface in a depletion-layer formation process: Effect of nonparabolicity of the conduction-band dispersion
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Journal Articles

Hybrid vertical architecture transistor with magnetic-field-dependent current amplification as organic magnetocurrent investigation tool

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Abd R. B. M. Yusoff, Ivo A. Hümmelgen
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 074505 (2009)
https://doi.org/10.1063/1.3236574
Published: October 2009
View articletitled, Hybrid vertical architecture transistor with magnetic-field-dependent current amplification as organic magnetocurrent investigation tool
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Journal Articles

Analytical solution for charge-carrier injection into an insulating layer in the drift diffusion approximation

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V. I. Shashkin, N. V. Vostokov
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 123708 (2008)
https://doi.org/10.1063/1.3050297
Published: December 2008
View articletitled, Analytical solution for charge-carrier injection into an insulating layer in the drift diffusion approximation
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Journal Articles

Diffusive transport in graphene: The role of interband correlation

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S. Y. Liu, X. L. Lei, Norman J. M. Horing
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 043705 (2008)
https://doi.org/10.1063/1.2969787
Published: August 2008
View articletitled, Diffusive transport in graphene: The role of interband correlation
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Journal Articles

Multiple switching of spin polarization injected into a semiconductor by a multiferroic tunneling junction

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Jian Wang, Z. Y. Li
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 033908 (2008)
https://doi.org/10.1063/1.2952061
Published: August 2008
View articletitled, Multiple switching of spin polarization injected into a semiconductor by a multiferroic tunneling junction
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Journal Articles

Interface-induced phenomena in polarization response of ferroelectric thin films

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A. K. Tagantsev, G. Gerra
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 051607 (2006)
https://doi.org/10.1063/1.2337009
Published: September 2006
View articletitled, Interface-induced phenomena in polarization response of ferroelectric thin films
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Journal Articles

Erratum: “A study of current transport in ( Ba x Sr 1 − x ) Ti 1 + y O 3 + z thin-film capacitors containing a voltage-dependent interface state charge distribution” [J. Appl. Phys. 97, 114101 (2005)]

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J. D. Baniecki, T. Shioga, K. Kurihara, N. Kamehara
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 119901 (2006)
https://doi.org/10.1063/1.2181432
Published: June 2006
View articletitled, Erratum: “A study of current transport in ( Ba x Sr 1 − x ) Ti 1 + y O 3 + z thin-film capacitors containing a voltage-dependent interface state charge distribution” [J. Appl. Phys. 97, 114101 (2005)]
Open the PDF for Erratum: “A study of current transport in ( Ba x Sr 1 − x ) Ti 1 + y O 3 + z thin-film capacitors containing a voltage-dependent interface state charge distribution” [J. Appl. Phys. 97, 114101 (2005)] in another window
Journal Articles

Deaging in Gd 2 ( Mo O 4 ) 3 by cyclic motion of a single planar domain wall

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V. Ya. Shur, E. V. Nikolaeva, E. I. Shishkin, I. S. Baturin, A. G. Shur, T. Utschig, T. Schlegel, D. C. Lupascu
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 074106 (2005)
https://doi.org/10.1063/1.2077846
Published: October 2005
View articletitled, Deaging in Gd 2 ( Mo O 4 ) 3 by cyclic motion of a single planar domain wall
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Journal Articles

Measuring carrier density in parallel conduction layers of quantum Hall systems

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M. Grayson, F. Fischer
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 013709 (2005)
https://doi.org/10.1063/1.1948529
Published: July 2005
View articletitled, Measuring carrier density in parallel conduction layers of quantum Hall systems
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Journal Articles

Screening and strain effects on the ground-state energy of a quasi-two-dimensional quantum well system

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Tzuen-Rong Yang, Mi-Ra Kim
Journal: Journal of Applied Physics
J. Appl. Phys. 89, 1156–1160 (2001)
https://doi.org/10.1063/1.1332420
Published: January 2001
View articletitled, Screening and strain effects on the ground-state energy of a quasi-two-dimensional quantum well system
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Journal Articles

Resonant tunneling structures with local potential perturbations

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L. Burgnies, O. Vanbesien, V. Sadaune, D. Lippens, J. Nagle, B. Vinter
Journal: Journal of Applied Physics
J. Appl. Phys. 75, 4527–4532 (1994)
https://doi.org/10.1063/1.355945
Published: May 1994
View articletitled, Resonant tunneling structures with local potential perturbations
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Journal Articles

Reduction of interface phonon modes using metal‐semiconductor heterostructures

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A. R. Bhatt, K. W. Kim, M. A. Stroscio, G. J. Iafrate, Mitra Dutta, Harold L. Grubin, Reza Haque, X. T. Zhu
Journal: Journal of Applied Physics
J. Appl. Phys. 73, 2338–2342 (1993)
https://doi.org/10.1063/1.353139
Published: March 1993
View articletitled, Reduction of interface phonon modes using metal‐semiconductor heterostructures
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Journal Articles

A novel quantum wire formed by lateral p–n–p junctions between quasi‐two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfaces

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Henry K. Harbury, Wolfgang Porod, Stephen M. Goodnick
Journal: Journal of Applied Physics
J. Appl. Phys. 73, 1509–1520 (1993)
https://doi.org/10.1063/1.353225
Published: February 1993
View articletitled, A novel quantum wire formed by lateral p–n–p junctions between quasi‐two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfaces
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