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Journal Articles

Analysis of trap-assisted tunneling current at non-alloyed contacts formed on heavily ion-implanted n-type SiC

Masahiro Hara, Hajime Tanaka, Mitsuaki Kaneko, Tsunenobu Kimoto
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 135704 (2025)
https://doi.org/10.1063/5.0258366
Published: April 2025
View articletitled, Analysis of trap-assisted tunneling current at non-alloyed contacts formed on heavily ion-implanted n-type SiC
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Journal Articles

Effect of temperature on the electrical performance of GaN Schottky barrier impact ionization avalanche transit time diodes

Xuan Huang, Lin-An Yang, Jian-Hua Zhou, Xin-Yi Wang, Xiao-Hua Ma, Yue Hao
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 125701 (2025)
https://doi.org/10.1063/5.0250967
Published: March 2025
View articletitled, Effect of temperature on the electrical performance of GaN Schottky barrier impact ionization avalanche transit time diodes
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Journal Articles

High-temperature effects on oscillatory conductivity in disordered quantum dot arrays: Role of Coulomb interactions and localization length

Anjali Panwar, Vikas Malik, Subhendra D. Mahanti, Neeleshwar Sonnathi, Anjana Bagga
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 114302 (2025)
https://doi.org/10.1063/5.0238227
Published: March 2025
View articletitled, High-temperature effects on oscillatory conductivity in disordered quantum dot arrays: Role of Coulomb interactions and localization length
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Journal Articles

The Zintl pnictides Yb10CdSb9 and Yb14CdSb11: New candidate thermoelectric materials

Michael O. Ogunbunmi, Kowsik Ghosh, Connor Donnelly, Sviatoslav Baranets, Svilen Bobev
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 075105 (2025)
https://doi.org/10.1063/5.0244442
Published: February 2025
View articletitled, The Zintl pnictides Yb10CdSb9 and Yb14CdSb11: New candidate thermoelectric materials
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Journal Articles

Unintentional doping in PM6:Y6-based solar cells from exposure to the ambient

Staffan Dahlström, Daniel Österbacka, Ronald Österbacka, Mathias Nyman
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 063105 (2025)
https://doi.org/10.1063/5.0220921
Published: February 2025
View articletitled, Unintentional doping in PM6:Y6-based solar cells from exposure to the ambient
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Journal Articles

Investigation of (mis-)orientation in zincblende GaN grown on micro-patterned Si(001) using electron backscatter diffraction

Dale M. Waters, Bethany Thompson, Gergely Ferenczi, Ben Hourahine, Grzegorz Cios, Aimo Winkelmann, Christoph J. M. Stark, Christian Wetzel, Carol Trager-Cowan, Jochen Bruckbauer
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 045701 (2025)
https://doi.org/10.1063/5.0244438
Published: January 2025
View articletitled, Investigation of (mis-)orientation in zincblende GaN grown on micro-patterned Si(001) using electron backscatter diffraction
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Journal Articles

Study of photoinduced nonthermal melting of 4H-SiC under femtosecond pulse laser irradiation based on time-dependent density functional theory simulations

Sen Yang, Yuxuan Lan, Gaoming Li, Bo Peng, Hui Guo
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 245701 (2024)
https://doi.org/10.1063/5.0221305
Published: December 2024
View articletitled, Study of photoinduced nonthermal melting of 4H-SiC under femtosecond pulse laser irradiation based on time-dependent density functional theory simulations
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Journal Articles

The impact of P-type doping level and profile on performance of InAs quantum dot lasers

Ruo-Tao Liu, An-Tian Du, Chun-Fang Cao, Jin Yang, Jian-Chu Wu, Kun Wang, Chen Yang, Hua Huang, Qian Gong
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 223102 (2024)
https://doi.org/10.1063/5.0229071
Published: December 2024
View articletitled, The impact of P-type doping level and profile on performance of InAs quantum dot lasers
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Journal Articles

Characterization and quantitative understanding of subthreshold swing of Si metal–oxide–semiconductor field effect transistors at cryogenic temperatures

Min-Soo Kang, Kasidit Toprasertpong, Hiroshi Oka, Takahiro Mori, Mitsuru Takenaka, Shinichi Takagi
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 195702 (2024)
https://doi.org/10.1063/5.0233899
Published: November 2024
View articletitled, Characterization and quantitative understanding of subthreshold swing of Si metal–oxide–semiconductor field effect transistors at cryogenic temperatures
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Journal Articles

Phosphorene junctions as a platform for spin-selective quantum dots in next-generation devices

Maryam Mahdavifar, Farhad Khoeini, François M. Peeters
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 184301 (2024)
https://doi.org/10.1063/5.0234025
Published: November 2024
View articletitled, Phosphorene junctions as a platform for spin-selective quantum dots in next-generation devices
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Journal Articles

Electric-field-induced enhancement of exciton binding energy in one-dimensional phosphorene atomic chain

Wenzhuo Huang, Jun Zhong, Weidong Sheng
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 164303 (2024)
https://doi.org/10.1063/5.0226011
Published: October 2024
View articletitled, Electric-field-induced enhancement of exciton binding energy in one-dimensional phosphorene atomic chain
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Journal Articles

Reproduction of single-to-double hysteresis transition of nuclear spin polarization in a single InAlAs quantum dot

Z.-R. Li, S. Yamamoto, S. Adachi, R. Kaji
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 084308 (2024)
https://doi.org/10.1063/5.0223272
Published: August 2024
View articletitled, Reproduction of single-to-double hysteresis transition of nuclear spin polarization in a single InAlAs quantum dot
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Journal Articles

Dipole engineering to achieve interface dependent electric contact in Janus MoSO/graphene heterostructure

Wei Zhang, Weixiao Ji
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 084304 (2024)
https://doi.org/10.1063/5.0220170
Published: August 2024
View articletitled, Dipole engineering to achieve interface dependent electric contact in Janus MoSO/graphene heterostructure
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Journal Articles

Heat jet approach for finite temperature atomic simulations of single-crystal silicon layers

Xuewei Xia, Lei Zhang, Baiyili Liu
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 054302 (2024)
https://doi.org/10.1063/5.0214505
Published: August 2024
View articletitled, Heat jet approach for finite temperature atomic simulations of single-crystal silicon layers
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Journal Articles

Efficient characterization of a double quantum dot using the Hubbard model

Will Wang, John Dean Rooney, Hongwen Jiang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 044401 (2024)
https://doi.org/10.1063/5.0215622
Published: July 2024
View articletitled, Efficient characterization of a double quantum dot using the Hubbard model
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Journal Articles

Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors

Lisa Mitterhuber, Barbara Kosednar-Legenstein, Anurag Vohra, Matteo Borga, Niels Posthuma, Elke Kraker
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 045108 (2024)
https://doi.org/10.1063/5.0207513
Published: July 2024
View articletitled, Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors
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Journal Articles

Sign reversal of visible to UV photocurrent in core–shell n-InGaN/p-GaN nanowire photodetectors

Xingchen Pan, Rongli Deng, Hao Hong, Mingrui Luo, Richard Nötzel
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 034501 (2024)
https://doi.org/10.1063/5.0218545
Published: July 2024
View articletitled, Sign reversal of visible to UV photocurrent in core–shell n-InGaN/p-GaN nanowire photodetectors
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Journal Articles

Improvement of linearity in trap-rich substrates for radio frequency applications: Which of donor and acceptor trap is the best?

Justine Philippe, Jean-François Robillard, Daniel Gloria, Emmanuel Dubois
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 015702 (2024)
https://doi.org/10.1063/5.0205853
Published: July 2024
View articletitled, Improvement of linearity in trap-rich substrates for radio frequency applications: Which of donor and acceptor trap is the best?
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Journal Articles

The impact of S vacancies on the modulation of the work function and Schottky barrier at the Au/MoS2 interface

Duxing Xie, Fengzhen Yang, Xu Qiu, Yuhao Hu, Yi Sun, Shuang He, Xiufeng Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 235105 (2024)
https://doi.org/10.1063/5.0206006
Published: June 2024
View articletitled, The impact of S vacancies on the modulation of the work function and Schottky barrier at the Au/MoS2 interface
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Journal Articles

Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements

Aditya K. Bhat, Hyun-Seop Kim, Abhishek Mishra, Matthew D. Smith, Michael J. Uren, Martin Kuball
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 195704 (2024)
https://doi.org/10.1063/5.0203022
Published: May 2024
View articletitled, Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements
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