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Journal Articles

Modeling interface roughness scattering with incorporation of potential energy and wave-function fluctuations: Enhancing mobility in AlN/GaN digital alloys

Gongyi Hong, Alexander Chaney, Adam Charnas, Yunjo Kim, Thaddeus J. Asel, Adam T. Neal, Shin Mou
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 245706 (2024)
https://doi.org/10.1063/5.0229570
Published: December 2024
View articletitled, Modeling interface roughness scattering with incorporation of potential energy and wave-function fluctuations: Enhancing mobility in AlN/GaN digital alloys
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Journal Articles

Tunable THz-whistle built on a two-dimensional electronic analog of a Helmholtz resonator

M. V. Cheremisin
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 163102 (2024)
https://doi.org/10.1063/5.0226347
Published: October 2024
View articletitled, Tunable THz-whistle built on a two-dimensional electronic analog of a Helmholtz resonator
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Journal Articles

Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis

Narendra Rai, Ritam Sarkar, Ashutosh Mahajan, Apurba Laha, Dipankar Saha, Swaroop Ganguly
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 164501 (2024)
https://doi.org/10.1063/5.0228156
Published: October 2024
View articletitled, Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis
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Journal Articles

Unraveling intrinsic mobility limits in two-dimensional (AlxGa1−x)2O3 alloys

Xinlei Duan, Safdar lqbal, Min Shi, Bao Wang, Linhua Liu, Jia-Yue Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 225103 (2024)
https://doi.org/10.1063/5.0201979
Published: June 2024
View articletitled, Unraveling intrinsic mobility limits in two-dimensional (AlxGa1−x)2O3 alloys
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Journal Articles

Promises and technological prospects of two-dimensional Rashba materials

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Arjyama Bordoloi, A. C. Garcia-Castro, Zachary Romestan, Aldo H. Romero, Sobhit Singh
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 220901 (2024)
https://doi.org/10.1063/5.0212170
Published: June 2024
View articletitled, Promises and technological prospects of two-dimensional Rashba materials
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Journal Articles

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: Effect of electron cooling in channel and at side contacts

V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 194502 (2024)
https://doi.org/10.1063/5.0211116
Published: May 2024
View articletitled, Dynamic characteristics of terahertz hot-electron graphene FET bolometers: Effect of electron cooling in channel and at side contacts
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Journal Articles

Carrier transport in LPCVD grown Ge-doped β-Ga2O3/4H-SiC isotype heterojunction

T. Saquib, F. Akyol, H. Ozden, N. Somaiah, J. Sahoo, R. Muralidharan, D. N. Nath
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 065701 (2024)
https://doi.org/10.1063/5.0188055
Published: February 2024
View articletitled, Carrier transport in LPCVD grown Ge-doped β-Ga2O3/4H-SiC isotype heterojunction
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Journal Articles

Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

Narendra Rai, Ritam Sarkar, Ashutosh Mahajan, Apurba Laha, Dipankar Saha, Swaroop Ganguly
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 244503 (2023)
https://doi.org/10.1063/5.0176944
Published: December 2023
View articletitled, Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors
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Journal Articles

Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)

Sean Knight, Steffen Richter, Alexis Papamichail, Philipp Kühne, Nerijus Armakavicius, Shiqi Guo, Axel R. Persson, Vallery Stanishev, Viktor Rindert, Per O. Å. Persson, Plamen P. Paskov, Mathias Schubert, Vanya Darakchieva
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 185701 (2023)
https://doi.org/10.1063/5.0163754
Published: November 2023
View articletitled, Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
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Includes: Supplementary data
Journal Articles

Fast low bias pulsed DC transport measurements for the investigation of low temperature transport effects in semiconductor devices

C. Fuchs, M. Hofer, L. Fürst, S. Shamim, T. Kießling, H. Buhmann, L. W. Molenkamp
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 175702 (2023)
https://doi.org/10.1063/5.0170478
Published: November 2023
View articletitled, Fast low bias pulsed DC transport measurements for the investigation of low temperature transport effects in semiconductor devices
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Journal Articles

A semi-analytical and semi-numerical method for solving plasma instability of nonuniform two-dimensional electron gas

Zijian Qiu, Shengpeng Yang, Ping Zhang, Hongyang Guo, Hanghui Deng, Shaomeng Wang, Yubin Gong
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 163102 (2023)
https://doi.org/10.1063/5.0173282
Published: October 2023
View articletitled, A semi-analytical and semi-numerical method for solving plasma instability of nonuniform two-dimensional electron gas
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Journal Articles

Erratum: “Thermoelectric transport contribution from topological surface states vs 2D-electron gas in 10 nm Bi2Se3” [J. Appl. Phys. 132, 164301 (2022)]

Lakshmi Amulya Nimmagadda, Yang Bai, Manjunath C. Rajagopal, Soorya Suresh Babu, James N. Eckstein, Sanjiv Sinha
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 149901 (2023)
https://doi.org/10.1063/5.0174773
Published: October 2023
View articletitled, Erratum: “Thermoelectric transport contribution from topological surface states vs 2D-electron gas in 10 nm Bi2Se3” [J. Appl. Phys. 132, 164301 (2022)]
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Journal Articles

The impact of device length on the electron’s effective mobility

Alireza Azimi, Mohammadreza Azimi, Michael S. Shur, Stephen K. O’Leary
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 125701 (2023)
https://doi.org/10.1063/5.0171559
Published: September 2023
View articletitled, The impact of device length on the electron’s effective mobility
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Journal Articles

Evidence of charged interface states limited scattering in GaN heterostructures

Indraneel Sanyal, Yu-Chih Chen, Chuan-Yue Yu, Jen-Inn Chyi
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 085702 (2023)
https://doi.org/10.1063/5.0159380
Published: August 2023
View articletitled, Evidence of charged interface states limited scattering in GaN heterostructures
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Journal Articles

High mobility electron gas with quasi-two-dimensional characteristics at the interface of Cr2O3/SrTiO3 heterostructures

Shuang-Shuang Li, Zhao-Cai Wang, Jing-Shi Ying, Ying Zhang, Lei Chen, Mao Ye, Shan-Ming Ke, Weiyao Zhao, Ren-Kui Zheng
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 035303 (2023)
https://doi.org/10.1063/5.0157590
Published: July 2023
View articletitled, High mobility electron gas with quasi-two-dimensional characteristics at the interface of Cr2O3/SrTiO3 heterostructures
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Journal Articles

Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam

Akira Uedono, Yasuki Kimura, Takuya Hoshii, Kuniyuki Kakushima, Masatomo Sumiya, Masayuki Tsukui, Kiyotaka Miyano, Ichiro Mizushima, Takashi Yoda, Kazuo Tsutsui
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 225301 (2023)
https://doi.org/10.1063/5.0153128
Published: June 2023
View articletitled, Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam
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Journal Articles

Anomalous change of electronic properties for uniaxial-strained LaAlO3/SrTiO3 (001) heterostructure

Yaqin Wang, Zhengtao Zhang, Yitong Wang, Le Yuan, Wu Tang
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 024303 (2023)
https://doi.org/10.1063/5.0126785
Published: January 2023
View articletitled, Anomalous change of electronic properties for uniaxial-strained LaAlO3/SrTiO3 (001) heterostructure
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Journal Articles

Full-band Monte Carlo simulation of two-dimensional electron gas in (AlxGa1−x)2O3/Ga2O3 heterostructures

Avinash Kumar, Uttam Singisetti
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 205701 (2022)
https://doi.org/10.1063/5.0109577
Published: November 2022
View articletitled, Full-band Monte Carlo simulation of two-dimensional electron gas in (AlxGa1−x)2O3/Ga2O3 heterostructures
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Includes: Supplementary data
Journal Articles

Understanding the origin of mobility enhancement in wedge-shaped c-GaN nanowall networks utilizing spectroscopic techniques

Amandeep Kaur, Kousik Bera, Santosh Kumar Yadav, S. M. Shivaprasad, Anushree Roy, Subhabrata Dhar
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 194305 (2022)
https://doi.org/10.1063/5.0122101
Published: November 2022
View articletitled, Understanding the origin of mobility enhancement in wedge-shaped c-GaN nanowall networks utilizing spectroscopic techniques
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Includes: Supplementary data
Journal Articles

Thermoelectric transport contribution from topological surface states vs 2D-electron gas in 10 nm Bi2Se3

Lakshmi Amulya Nimmagadda, Yang Bai, Manjunath C. Rajagopal, Soorya Suresh Babu, James N. Eckstein, Sanjiv Sinha
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 164301 (2022)
https://doi.org/10.1063/5.0100991
Published: October 2022
View articletitled, Thermoelectric transport contribution from topological surface states vs 2D-electron gas in 10 nm Bi2Se3
Open the PDF for Thermoelectric transport contribution from topological surface states vs 2D-electron gas in 10 nm Bi2Se3 in another window
Includes: Supplementary data