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Journal Articles

New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

J. L. Autran, D. Munteanu
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 175701 (2023)
https://doi.org/10.1063/5.0156698
Published: November 2023
View article titled, New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices
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Journal Articles

Auger and spin dynamics in a self-assembled quantum dot

H. Mannel, J. Kerski, P. Lochner, M. Zöllner, A. D. Wieck, A. Ludwig, A. Lorke, M. Geller
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 154304 (2023)
https://doi.org/10.1063/5.0159775
Published: October 2023
View article titled, Auger and spin dynamics in a self-assembled quantum dot
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Includes: Supplementary data
Journal Articles

Effect of Mg doping on carrier recombination in GaN

Saulius Marcinkevičius, Yi Chao Chow, Shuji Nakamura, James S. Speck
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 085703 (2023)
https://doi.org/10.1063/5.0157378
Published: August 2023
View article titled, Effect of Mg doping on carrier recombination in GaN
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Journal Articles

Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data

P. T. Webster, R. A. Carrasco, A. T. Newell, J. V. Logan, P. C. Grant, D. Maestas, C. P. Morath
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 125704 (2023)
https://doi.org/10.1063/5.0147482
Published: March 2023
View article titled, Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data
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Journal Articles

Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies

Sweta Rani, Jitendra Kumar
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 104302 (2023)
https://doi.org/10.1063/5.0139599
Published: March 2023
View article titled, Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies
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Journal Articles

Influence of boron implantation induced defects on solar cells: Modeling the process defects

Sangaravadivel Masilamani, Ramachandran Ammapet Vijayan, Muthubalan Varadharajaperumal
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 065703 (2023)
https://doi.org/10.1063/5.0130315
Published: February 2023
View article titled, Influence of boron implantation induced defects on solar cells: Modeling the process defects
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Journal Articles

Low-temperature solution-processed nanoparticle-doped nickel oxide thin-film transistor

Cihai Chen, Qizhen Chen, Qian Yang, Huipeng Chen, Tailiang Guo
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 054501 (2023)
https://doi.org/10.1063/5.0121487
Published: February 2023
View article titled, Low-temperature solution-processed nanoparticle-doped nickel oxide thin-film transistor
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Includes: Supplementary data
Journal Articles

Differences in radiation damage to carrier lifetimes in the neutral and depletion regions of InGaP and GaAs solar cells

Tetsuya Nakamura, Mitsuru Imaizumi, Shin-ichiro Sato, Takeshi Ohshima, Hidefumi Akiyama, Yoshitaka Okada
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 115701 (2022)
https://doi.org/10.1063/5.0099106
Published: September 2022
View article titled, Differences in radiation damage to carrier lifetimes in the neutral and depletion regions of InGaP and GaAs solar cells
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Journal Articles

Model for elimination of lifetime-limiting carbon vacancy defects in SiC by thermal treatment

Christoph Zechner, Masahiro Tanaka, Kenji Shimai, Nikolas Zographos, Sozo Kanie, Shinzo Tsuboi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 035702 (2022)
https://doi.org/10.1063/5.0094963
Published: July 2022
View article titled, Model for elimination of lifetime-limiting carbon vacancy defects in SiC by thermal treatment
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Journal Articles

Effects of carrier storage in an uncapped Ge–Si core–shell nanocrystal on simulated nano-electron beam induced current

Abdelillah El Hdiy
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 214304 (2022)
https://doi.org/10.1063/5.0090630
Published: June 2022
View article titled, Effects of carrier storage in an uncapped Ge–Si core–shell nanocrystal on simulated nano-electron beam induced current
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Journal Articles

Development of laser heterodyne photothermal displacement method for mapping carrier nonradiative recombination centers in semiconductors

Tomoki Harada, Tetsuo Ikari, Atsuhiko Fukuyama
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 195701 (2022)
https://doi.org/10.1063/5.0085041
Published: May 2022
View article titled, Development of laser heterodyne photothermal displacement method for mapping carrier nonradiative recombination centers in semiconductors
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Journal Articles

Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach

Sami A. El Hageali, Harvey Guthrey, Steven Johnston, Jake Soto, Bruce Odekirk, Brian P. Gorman, Mowafak Al-Jassim
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 185705 (2022)
https://doi.org/10.1063/5.0088313
Published: May 2022
View article titled, Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach
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Journal Articles

Comparative performance analysis of lead-free perovskites solar cells by numerical simulation

Shristy Srivastava, Anand Kumar Singh, Prashant Kumar, Basudev Pradhan
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 175001 (2022)
https://doi.org/10.1063/5.0088099
Published: May 2022
View article titled, Comparative performance analysis of lead-free perovskites solar cells by numerical simulation
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Journal Articles

Lock-in carrierography of semiconductors and optoelectronics

Qiming Sun, Binxing Zhao, Jing Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 151101 (2022)
https://doi.org/10.1063/5.0088214
Published: April 2022
View article titled, Lock-in carrierography of semiconductors and optoelectronics
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Journal Articles

Numerical analysis of the radiation-induced conductivity in polymers in a large-signal regime

Renat Ikhsanov, Andrey Tyutnev, Vladimir Nikitenko, Vladimir Saenko
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 115501 (2022)
https://doi.org/10.1063/5.0083086
Published: March 2022
View article titled, Numerical analysis of the radiation-induced conductivity in polymers in a large-signal regime
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Journal Articles

Electron radiation effects on carrier relaxation in molecular beam and vapor deposition grown GaAs test structures

Andrew Hudson, Seth Hubbard, Bor-Chau Juang, Baolai Liang, Mukul Debnath, William Lotshaw
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 075703 (2022)
https://doi.org/10.1063/5.0076752
Published: February 2022
View article titled, Electron radiation effects on carrier relaxation in molecular beam and vapor deposition grown GaAs test structures
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Journal Articles

Non-equilibrium spin noise spectroscopy of a single quantum dot operating at fiber telecommunication wavelengths

Tian-Jiao Sun, P. Sterin, L. Lengert, C. Nawrath, M. Jetter, P. Michler, Yang Ji, J. Hübner, M. Oestreich
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 065703 (2022)
https://doi.org/10.1063/5.0078910
Published: February 2022
View article titled, Non-equilibrium spin noise spectroscopy of a single quantum dot operating at fiber telecommunication wavelengths
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Journal Articles

Signal recovery of a Fabry–Pérot interferometric x-ray pulse detector based on the RadOptic effect

Gang Wang, Kai He, Yiheng Liu, Xin Yan, Guilong Gao, Tao Wang, Xiaohui Yuan, Xu Zhao, Yufeng Dong, Jinshou Tian
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 064501 (2022)
https://doi.org/10.1063/5.0073295
Published: February 2022
View article titled, Signal recovery of a Fabry–Pérot interferometric x-ray pulse detector based on the RadOptic effect
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Journal Articles

Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence

Alessandro Caria, Carlo De Santi, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 043102 (2022)
https://doi.org/10.1063/5.0079022
Published: January 2022
View article titled, Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence
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Journal Articles

Monocrystalline 1.7-eV MgCdTe solar cells

Jia Ding, Calli M. Campbell, Jacob J. Becker, Cheng-Ying Tsai, Stephen T. Schaefer, Tyler T. McCarthy, Mathieu Boccard, Zachary C. Holman, Yong-Hang Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 023107 (2022)
https://doi.org/10.1063/5.0071682
Published: January 2022
View article titled, Monocrystalline 1.7-eV MgCdTe solar cells
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