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Journal Articles

Quantitative photothermal investigation of nonradiative recombination parameters in GaAs/InAs(QD)/GaAs quantum dot structures using a three-layer laser beam deflection model

S. Bouagila, S. Ilahi, M. Baira, A. Mandelis, N. Yacoubi
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 165107 (2024)
https://doi.org/10.1063/5.0227725
Published: October 2024
View article titled, Quantitative photothermal investigation of nonradiative recombination parameters in GaAs/InAs(QD)/GaAs quantum dot structures using a three-layer laser beam deflection model
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Journal Articles

Insights into optical absorption and dark currents of the 6.1 Å type-II superlattice absorbers for MWIR and SWIR applications

Anuja Singh, Bhaskaran Muralidharan
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 055703 (2024)
https://doi.org/10.1063/5.0218463
Published: August 2024
View article titled, Insights into optical absorption and dark currents of the 6.1 Å type-II superlattice absorbers for MWIR and SWIR applications
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Journal Articles

Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes

K. N. Schrock, D. A. Montealegre, W. Dai, M. Z. Bellus, L. M. Nichols, J. P. Prineas
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 183101 (2024)
https://doi.org/10.1063/5.0193624
Published: May 2024
View article titled, Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes
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Journal Articles

Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor

Raman Kumar, Robert B. Kaufman, Fu-Chen Hsiao, Jean-Pierre Leburton, John M. Dallesasse
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 163103 (2024)
https://doi.org/10.1063/5.0190385
Published: April 2024
View article titled, Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor
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Journal Articles

Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements

Shintaro Komaba, Nana Taketa, Meita Asami, Masakazu Sugiyama, Tetsuo Ikari, Atsuhiko Fukuyama
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 153103 (2024)
https://doi.org/10.1063/5.0176339
Published: April 2024
View article titled, Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements
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Journal Articles

First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes

Xie Zhang, Mark E. Turiansky, Lukas Razinkovas, Marek Maciaszek, Peter Broqvist, Qimin Yan, John L. Lyons, Cyrus E. Dreyer, Darshana Wickramaratne, Ádám Gali, Alfredo Pasquarello, Chris G. Van de Walle
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 150901 (2024)
https://doi.org/10.1063/5.0205525
Published: April 2024
View article titled, First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes
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Journal Articles

The physical meaning of time-delayed collection field transients from disordered devices

Markus Hußner, Carsten Deibel, Roderick C. I. MacKenzie
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 125502 (2024)
https://doi.org/10.1063/5.0187323
Published: March 2024
View article titled, The physical meaning of time-delayed collection field transients from disordered devices
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Journal Articles

Native point defects in HgCdTe infrared detector material: Identifying deep centers from first principles

Wei Chen, Gian-Marco Rignanese, Jifeng Liu, Geoffroy Hautier
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 114502 (2024)
https://doi.org/10.1063/5.0187006
Published: March 2024
View article titled, Native point defects in HgCdTe infrared detector material: Identifying deep centers from first principles
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Journal Articles

Study of pristine and degraded blue quantum dot light-emitting diodes by transient electroluminescence measurements

Wenxin Lin, Jiangxia Huang, Shuxin Li, Paul W. M. Blom, Haonan Feng, Jiahao Li, Xiongfeng Lin, Yulin Guo, Wenlin Liang, Longjia Wu, Quan Niu, Yuguang Ma
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 045701 (2024)
https://doi.org/10.1063/5.0180211
Published: January 2024
View article titled, Study of pristine and degraded blue quantum dot light-emitting diodes by transient electroluminescence measurements
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Journal Articles

Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses

Kai Li, Yinchu Shen, Zhijuan Su, Yaping Dan
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 014301 (2024)
https://doi.org/10.1063/5.0181306
Published: January 2024
View article titled, Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses
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Journal Articles

Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers

K. E. Kudryavtsev, B. A. Andreev, D. N. Lobanov, M. A. Kalinnikov, A. N. Yablonskiy, P. A. Yunin, A. V. Novikov, Z. F. Krasilnik
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 215701 (2023)
https://doi.org/10.1063/5.0178131
Published: December 2023
View article titled, Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers
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Journal Articles

New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

J. L. Autran, D. Munteanu
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 175701 (2023)
https://doi.org/10.1063/5.0156698
Published: November 2023
View article titled, New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices
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Journal Articles

Auger and spin dynamics in a self-assembled quantum dot

H. Mannel, J. Kerski, P. Lochner, M. Zöllner, A. D. Wieck, A. Ludwig, A. Lorke, M. Geller
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 154304 (2023)
https://doi.org/10.1063/5.0159775
Published: October 2023
View article titled, Auger and spin dynamics in a self-assembled quantum dot
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Includes: Supplementary data
Journal Articles

Effect of Mg doping on carrier recombination in GaN

Saulius Marcinkevičius, Yi Chao Chow, Shuji Nakamura, James S. Speck
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 085703 (2023)
https://doi.org/10.1063/5.0157378
Published: August 2023
View article titled, Effect of Mg doping on carrier recombination in GaN
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Journal Articles

Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data

P. T. Webster, R. A. Carrasco, A. T. Newell, J. V. Logan, P. C. Grant, D. Maestas, C. P. Morath
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 125704 (2023)
https://doi.org/10.1063/5.0147482
Published: March 2023
View article titled, Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data
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Journal Articles

Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies

Sweta Rani, Jitendra Kumar
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 104302 (2023)
https://doi.org/10.1063/5.0139599
Published: March 2023
View article titled, Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies
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Journal Articles

Influence of boron implantation induced defects on solar cells: Modeling the process defects

Sangaravadivel Masilamani, Ramachandran Ammapet Vijayan, Muthubalan Varadharajaperumal
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 065703 (2023)
https://doi.org/10.1063/5.0130315
Published: February 2023
View article titled, Influence of boron implantation induced defects on solar cells: Modeling the process defects
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Journal Articles

Low-temperature solution-processed nanoparticle-doped nickel oxide thin-film transistor

Cihai Chen, Qizhen Chen, Qian Yang, Huipeng Chen, Tailiang Guo
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 054501 (2023)
https://doi.org/10.1063/5.0121487
Published: February 2023
View article titled, Low-temperature solution-processed nanoparticle-doped nickel oxide thin-film transistor
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Includes: Supplementary data
Journal Articles

Differences in radiation damage to carrier lifetimes in the neutral and depletion regions of InGaP and GaAs solar cells

Tetsuya Nakamura, Mitsuru Imaizumi, Shin-ichiro Sato, Takeshi Ohshima, Hidefumi Akiyama, Yoshitaka Okada
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 115701 (2022)
https://doi.org/10.1063/5.0099106
Published: September 2022
View article titled, Differences in radiation damage to carrier lifetimes in the neutral and depletion regions of InGaP and GaAs solar cells
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Journal Articles

Model for elimination of lifetime-limiting carbon vacancy defects in SiC by thermal treatment

Christoph Zechner, Masahiro Tanaka, Kenji Shimai, Nikolas Zographos, Sozo Kanie, Shinzo Tsuboi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 035702 (2022)
https://doi.org/10.1063/5.0094963
Published: July 2022
View article titled, Model for elimination of lifetime-limiting carbon vacancy defects in SiC by thermal treatment
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