1-20 of 238
Charge recombination
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Insights into optical absorption and dark currents of the 6.1 Å type-II superlattice absorbers for MWIR and SWIR applications

Anuja Singh, Bhaskaran Muralidharan
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 055703 (2024)
https://doi.org/10.1063/5.0218463
Published: August 2024
View article titled, Insights into optical absorption and dark currents of the 6.1 Å type-II superlattice absorbers for MWIR and SWIR applications
Open the PDF for Insights into optical absorption and dark currents of the 6.1 Å type-II superlattice absorbers for MWIR and SWIR applications in another window
Journal Articles

Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes

K. N. Schrock, D. A. Montealegre, W. Dai, M. Z. Bellus, L. M. Nichols, J. P. Prineas
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 183101 (2024)
https://doi.org/10.1063/5.0193624
Published: May 2024
View article titled, Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes
Open the PDF for Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes in another window
Journal Articles

Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor

Raman Kumar, Robert B. Kaufman, Fu-Chen Hsiao, Jean-Pierre Leburton, John M. Dallesasse
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 163103 (2024)
https://doi.org/10.1063/5.0190385
Published: April 2024
View article titled, Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor
Open the PDF for Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor in another window
Journal Articles

Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements

Shintaro Komaba, Nana Taketa, Meita Asami, Masakazu Sugiyama, Tetsuo Ikari, Atsuhiko Fukuyama
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 153103 (2024)
https://doi.org/10.1063/5.0176339
Published: April 2024
View article titled, Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements
Open the PDF for Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements in another window
Journal Articles

First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes

Xie Zhang, Mark E. Turiansky, Lukas Razinkovas, Marek Maciaszek, Peter Broqvist, Qimin Yan, John L. Lyons, Cyrus E. Dreyer, Darshana Wickramaratne, Ádám Gali, Alfredo Pasquarello, Chris G. Van de Walle
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 150901 (2024)
https://doi.org/10.1063/5.0205525
Published: April 2024
View article titled, First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes
Open the PDF for First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes in another window
Journal Articles

The physical meaning of time-delayed collection field transients from disordered devices

Markus Hußner, Carsten Deibel, Roderick C. I. MacKenzie
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 125502 (2024)
https://doi.org/10.1063/5.0187323
Published: March 2024
View article titled, The physical meaning of time-delayed collection field transients from disordered devices
Open the PDF for The physical meaning of time-delayed collection field transients from disordered devices in another window
Journal Articles

Study of pristine and degraded blue quantum dot light-emitting diodes by transient electroluminescence measurements

Wenxin Lin, Jiangxia Huang, Shuxin Li, Paul W. M. Blom, Haonan Feng, Jiahao Li, Xiongfeng Lin, Yulin Guo, Wenlin Liang, Longjia Wu, Quan Niu, Yuguang Ma
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 045701 (2024)
https://doi.org/10.1063/5.0180211
Published: January 2024
View article titled, Study of pristine and degraded blue quantum dot light-emitting diodes by transient electroluminescence measurements
Open the PDF for Study of pristine and degraded blue quantum dot light-emitting diodes by transient electroluminescence measurements in another window
Journal Articles

Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses

Kai Li, Yinchu Shen, Zhijuan Su, Yaping Dan
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 014301 (2024)
https://doi.org/10.1063/5.0181306
Published: January 2024
View article titled, Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses
Open the PDF for Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses in another window
Journal Articles

New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

J. L. Autran, D. Munteanu
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 175701 (2023)
https://doi.org/10.1063/5.0156698
Published: November 2023
View article titled, New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices
Open the PDF for New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices in another window
Journal Articles

Effect of Mg doping on carrier recombination in GaN

Saulius Marcinkevičius, Yi Chao Chow, Shuji Nakamura, James S. Speck
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 085703 (2023)
https://doi.org/10.1063/5.0157378
Published: August 2023
View article titled, Effect of Mg doping on carrier recombination in GaN
Open the PDF for Effect of Mg doping on carrier recombination in GaN in another window
Journal Articles

Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data

P. T. Webster, R. A. Carrasco, A. T. Newell, J. V. Logan, P. C. Grant, D. Maestas, C. P. Morath
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 125704 (2023)
https://doi.org/10.1063/5.0147482
Published: March 2023
View article titled, Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data
Open the PDF for Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data in another window
Journal Articles

Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies

Sweta Rani, Jitendra Kumar
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 104302 (2023)
https://doi.org/10.1063/5.0139599
Published: March 2023
View article titled, Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies
Open the PDF for Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies in another window
Journal Articles

Influence of boron implantation induced defects on solar cells: Modeling the process defects

Sangaravadivel Masilamani, Ramachandran Ammapet Vijayan, Muthubalan Varadharajaperumal
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 065703 (2023)
https://doi.org/10.1063/5.0130315
Published: February 2023
View article titled, Influence of boron implantation induced defects on solar cells: Modeling the process defects
Open the PDF for Influence of boron implantation induced defects on solar cells: Modeling the process defects in another window
Journal Articles

Low-temperature solution-processed nanoparticle-doped nickel oxide thin-film transistor

Cihai Chen, Qizhen Chen, Qian Yang, Huipeng Chen, Tailiang Guo
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 054501 (2023)
https://doi.org/10.1063/5.0121487
Published: February 2023
View article titled, Low-temperature solution-processed nanoparticle-doped nickel oxide thin-film transistor
Open the PDF for Low-temperature solution-processed nanoparticle-doped nickel oxide thin-film transistor in another window
Includes: Supplementary data
Journal Articles

Effects of carrier storage in an uncapped Ge–Si core–shell nanocrystal on simulated nano-electron beam induced current

Abdelillah El Hdiy
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 214304 (2022)
https://doi.org/10.1063/5.0090630
Published: June 2022
View article titled, Effects of carrier storage in an uncapped Ge–Si core–shell nanocrystal on simulated nano-electron beam induced current
Open the PDF for Effects of carrier storage in an uncapped Ge–Si core–shell nanocrystal on simulated nano-electron beam induced current in another window
Journal Articles

Development of laser heterodyne photothermal displacement method for mapping carrier nonradiative recombination centers in semiconductors

Tomoki Harada, Tetsuo Ikari, Atsuhiko Fukuyama
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 195701 (2022)
https://doi.org/10.1063/5.0085041
Published: May 2022
View article titled, Development of laser heterodyne photothermal displacement method for mapping carrier nonradiative recombination centers in semiconductors
Open the PDF for Development of laser heterodyne photothermal displacement method for mapping carrier nonradiative recombination centers in semiconductors in another window
Journal Articles

Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach

Sami A. El Hageali, Harvey Guthrey, Steven Johnston, Jake Soto, Bruce Odekirk, Brian P. Gorman, Mowafak Al-Jassim
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 185705 (2022)
https://doi.org/10.1063/5.0088313
Published: May 2022
View article titled, Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach
Open the PDF for Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach in another window
Journal Articles

Comparative performance analysis of lead-free perovskites solar cells by numerical simulation

Shristy Srivastava, Anand Kumar Singh, Prashant Kumar, Basudev Pradhan
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 175001 (2022)
https://doi.org/10.1063/5.0088099
Published: May 2022
View article titled, Comparative performance analysis of lead-free perovskites solar cells by numerical simulation
Open the PDF for Comparative performance analysis of lead-free perovskites solar cells by numerical simulation in another window
Journal Articles

Electron radiation effects on carrier relaxation in molecular beam and vapor deposition grown GaAs test structures

Andrew Hudson, Seth Hubbard, Bor-Chau Juang, Baolai Liang, Mukul Debnath, William Lotshaw
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 075703 (2022)
https://doi.org/10.1063/5.0076752
Published: February 2022
View article titled, Electron radiation effects on carrier relaxation in molecular beam and vapor deposition grown GaAs test structures
Open the PDF for Electron radiation effects on carrier relaxation in molecular beam and vapor deposition grown GaAs test structures in another window
Journal Articles

Signal recovery of a Fabry–Pérot interferometric x-ray pulse detector based on the RadOptic effect

Gang Wang, Kai He, Yiheng Liu, Xin Yan, Guilong Gao, Tao Wang, Xiaohui Yuan, Xu Zhao, Yufeng Dong, Jinshou Tian
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 064501 (2022)
https://doi.org/10.1063/5.0073295
Published: February 2022
View article titled, Signal recovery of a Fabry–Pérot interferometric x-ray pulse detector based on the RadOptic effect
Open the PDF for Signal recovery of a Fabry–Pérot interferometric x-ray pulse detector based on the RadOptic effect in another window