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Journal Articles

Effect of Mg doping on carrier recombination in GaN

Saulius Marcinkevičius, Yi Chao Chow, Shuji Nakamura, James S. Speck
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 085703 (2023)
https://doi.org/10.1063/5.0157378
Published: August 2023
View article titled, Effect of Mg doping on carrier recombination in GaN
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Journal Articles

Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data

P. T. Webster, R. A. Carrasco, A. T. Newell, J. V. Logan, P. C. Grant, D. Maestas, C. P. Morath
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 125704 (2023)
https://doi.org/10.1063/5.0147482
Published: March 2023
View article titled, Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data
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Journal Articles

Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies

Sweta Rani, Jitendra Kumar
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 104302 (2023)
https://doi.org/10.1063/5.0139599
Published: March 2023
View article titled, Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies
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Journal Articles

Influence of boron implantation induced defects on solar cells: Modeling the process defects

Sangaravadivel Masilamani, Ramachandran Ammapet Vijayan, Muthubalan Varadharajaperumal
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 065703 (2023)
https://doi.org/10.1063/5.0130315
Published: February 2023
View article titled, Influence of boron implantation induced defects on solar cells: Modeling the process defects
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Journal Articles

Low-temperature solution-processed nanoparticle-doped nickel oxide thin-film transistor

Cihai Chen, Qizhen Chen, Qian Yang, Huipeng Chen, Tailiang Guo
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 054501 (2023)
https://doi.org/10.1063/5.0121487
Published: February 2023
View article titled, Low-temperature solution-processed nanoparticle-doped nickel oxide thin-film transistor
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Includes: Supplementary data
Journal Articles

Effects of carrier storage in an uncapped Ge–Si core–shell nanocrystal on simulated nano-electron beam induced current

Abdelillah El Hdiy
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 214304 (2022)
https://doi.org/10.1063/5.0090630
Published: June 2022
View article titled, Effects of carrier storage in an uncapped Ge–Si core–shell nanocrystal on simulated nano-electron beam induced current
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Journal Articles

Development of laser heterodyne photothermal displacement method for mapping carrier nonradiative recombination centers in semiconductors

Tomoki Harada, Tetsuo Ikari, Atsuhiko Fukuyama
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 195701 (2022)
https://doi.org/10.1063/5.0085041
Published: May 2022
View article titled, Development of laser heterodyne photothermal displacement method for mapping carrier nonradiative recombination centers in semiconductors
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Journal Articles

Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach

Sami A. El Hageali, Harvey Guthrey, Steven Johnston, Jake Soto, Bruce Odekirk, Brian P. Gorman, Mowafak Al-Jassim
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 185705 (2022)
https://doi.org/10.1063/5.0088313
Published: May 2022
View article titled, Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach
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Journal Articles

Comparative performance analysis of lead-free perovskites solar cells by numerical simulation

Shristy Srivastava, Anand Kumar Singh, Prashant Kumar, Basudev Pradhan
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 175001 (2022)
https://doi.org/10.1063/5.0088099
Published: May 2022
View article titled, Comparative performance analysis of lead-free perovskites solar cells by numerical simulation
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Journal Articles

Lock-in carrierography of semiconductors and optoelectronics

Qiming Sun, Binxing Zhao, Jing Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 151101 (2022)
https://doi.org/10.1063/5.0088214
Published: April 2022
View article titled, Lock-in carrierography of semiconductors and optoelectronics
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Journal Articles

Electron radiation effects on carrier relaxation in molecular beam and vapor deposition grown GaAs test structures

Andrew Hudson, Seth Hubbard, Bor-Chau Juang, Baolai Liang, Mukul Debnath, William Lotshaw
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 075703 (2022)
https://doi.org/10.1063/5.0076752
Published: February 2022
View article titled, Electron radiation effects on carrier relaxation in molecular beam and vapor deposition grown GaAs test structures
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Journal Articles

Signal recovery of a Fabry–Pérot interferometric x-ray pulse detector based on the RadOptic effect

Gang Wang, Kai He, Yiheng Liu, Xin Yan, Guilong Gao, Tao Wang, Xiaohui Yuan, Xu Zhao, Yufeng Dong, Jinshou Tian
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 064501 (2022)
https://doi.org/10.1063/5.0073295
Published: February 2022
View article titled, Signal recovery of a Fabry–Pérot interferometric x-ray pulse detector based on the RadOptic effect
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Journal Articles

Monocrystalline 1.7-eV MgCdTe solar cells

Jia Ding, Calli M. Campbell, Jacob J. Becker, Cheng-Ying Tsai, Stephen T. Schaefer, Tyler T. McCarthy, Mathieu Boccard, Zachary C. Holman, Yong-Hang Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 023107 (2022)
https://doi.org/10.1063/5.0071682
Published: January 2022
View article titled, Monocrystalline 1.7-eV MgCdTe solar cells
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Journal Articles

Transducerless time domain reflectance measurement of semiconductor thermal properties

Sorren Warkander, Junqiao Wu
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 025101 (2022)
https://doi.org/10.1063/5.0069360
Published: January 2022
View article titled, Transducerless time domain reflectance measurement of semiconductor thermal properties
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Journal Articles

Decay of excess carriers in a two-defect model semiconductor: A time-resolved photoluminescence study

Ashwin Hariharan, Sascha Schäfer, Stephan J. Heise
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 235702 (2021)
https://doi.org/10.1063/5.0065600
Published: December 2021
View article titled, Decay of excess carriers in a two-defect model semiconductor: A time-resolved photoluminescence study
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Includes: Supplementary data
Journal Articles

Engineering Cu2ZnSnS4 grain boundaries for enhanced photovoltage generation at the Cu2ZnSnS4/TiO2 heterojunction: A nanoscale investigation using Kelvin probe force microscopy

Nisika, Anupam Ghosh, Kulwinder Kaur, Raja Sekhar Bobba, Quinn Qiao, Mukesh Kumar
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 195301 (2021)
https://doi.org/10.1063/5.0056161
Published: November 2021
View article titled, Engineering Cu<sub>2</sub>ZnSnS<sub>4</sub> grain boundaries for enhanced photovoltage generation at the Cu<sub>2</sub>ZnSnS<sub>4</sub>/TiO<sub>2</sub> heterojunction: A nanoscale investigation using Kelvin probe force microscopy
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Includes: Supplementary data
Journal Articles

In-operando x-ray topography analysis of SiC metal–oxide–semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations

Kumiko Konishi, Ryusei Fujita, Keisuke Kobayashi, Akio Yoneyama, Kotaro Ishiji, Hiroyuki Okino, Akio Shima, Toru Ujihara
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 145703 (2021)
https://doi.org/10.1063/5.0063082
Published: October 2021
View article titled, <em>In-operando</em> x-ray topography analysis of SiC metal–oxide–semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations
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Journal Articles

Two-photon photocurrent spectra of InAs quantum dot-in-well intermediated-band solar cells at room temperature

Yaxing Zhu, Shigeo Asahi, Naoya Miyashita, Yoshitaka Okada, Takashi Kita
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 124505 (2021)
https://doi.org/10.1063/5.0060569
Published: September 2021
View article titled, Two-photon photocurrent spectra of InAs quantum dot-in-well intermediated-band solar cells at room temperature
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Journal Articles

Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers

Masashi Kato, Takato Asada, Takuto Maeda, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 115701 (2021)
https://doi.org/10.1063/5.0041287
Published: March 2021
View article titled, Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers
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Journal Articles

Enhanced performance of Se-alloyed CdTe solar cells: The role of Se-segregation on the grain boundaries

Rong Wang, Mu Lan, Su-Huai Wei
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 024501 (2021)
https://doi.org/10.1063/5.0036701
Published: January 2021
View article titled, Enhanced performance of Se-alloyed CdTe solar cells: The role of Se-segregation on the grain boundaries
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