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Journal Articles

Influence of the interfacial topological effect on the behavior of transport current in MgB2 material in the Meissner state and mixed state

Open Access
Daniel Gajda, Michał Babij, Andrzej Zaleski, Matt Rindfleisch
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 223903 (2024)
https://doi.org/10.1063/5.0232677
Published: December 2024
View articletitled, Influence of the interfacial topological effect on the behavior of transport current in MgB2 material in the Meissner state and mixed state
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Journal Articles

Theoretical modeling of defect diffusion in wide bandgap semiconductors

FeaturedOpen Access
Ylva Knausgård Hommedal, Marianne Etzelmüller Bathen, Vilde Mari Reinertsen, Klaus Magnus Johansen, Lasse Vines, Ymir Kalmann Frodason
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 170902 (2024)
https://doi.org/10.1063/5.0205866
Published: May 2024
View articletitled, Theoretical modeling of defect diffusion in wide bandgap semiconductors
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Journal Articles

Monolayer Ge2S: An auxetic semiconductor with high carrier mobility for metal (Na, K, Mg)-ion battery anodes

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Tao Jiang, Yu-Jie Zhu, Xiao-Juan Ye, Chun-Sheng Liu
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 075001 (2022)
https://doi.org/10.1063/5.0099890
Published: August 2022
View articletitled, Monolayer Ge2S: An auxetic semiconductor with high carrier mobility for metal (Na, K, Mg)-ion battery anodes
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Includes: Supplementary data
Journal Articles

A comparable study of defect diffusion and recombination in Si and GaN

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Xiang-Ru Han, Yang Li, Pei Li, Xiao-Lan Yan, Xiao-Qiang Wu, Bing Huang
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 045701 (2022)
https://doi.org/10.1063/5.0094691
Published: July 2022
View articletitled, A comparable study of defect diffusion and recombination in Si and GaN
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Journal Articles

Improvement in perpendicular magnetic anisotropy and its voltage control efficiency in CoFeB/MgO tunnel junctions with Ta/Mo layered adhesion structures

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Tomohiro Ichinose, Tatsuya Yamamoto, Jun Uzuhashi, Takayuki Nozaki, Tadakatsu Ohkubo, Kay Yakushiji, Shingo Tamaru, Kazuhiro Hono, Shinji Yuasa
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 213901 (2022)
https://doi.org/10.1063/5.0088530
Published: June 2022
View articletitled, Improvement in perpendicular magnetic anisotropy and its voltage control efficiency in CoFeB/MgO tunnel junctions with Ta/Mo layered adhesion structures
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Journal Articles

Energetics of boron near tungsten surfaces: A first-principles study

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L. Yang, B. D. Wirth
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 015101 (2021)
https://doi.org/10.1063/5.0053100
Published: July 2021
View articletitled, Energetics of boron near tungsten surfaces: A first-principles study
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Includes: Supplementary data
Journal Articles

Influence of oxygen on trap-limited diffusion of hydrogen in proton-irradiated n-type silicon for power devices

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Akira Kiyoi, Naoyuki Kawabata, Katsumi Nakamura, Yasufumi Fujiwara
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 025701 (2021)
https://doi.org/10.1063/5.0035260
Published: January 2021
View articletitled, Influence of oxygen on trap-limited diffusion of hydrogen in proton-irradiated n-type silicon for power devices
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Journal Articles

Interface and layer periodicity effects on the thermal conductivity of copper-based nanomultilayers with tungsten, tantalum, and tantalum nitride diffusion barriers

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Claudia Cancellieri, Ethan A. Scott, Jeffrey Braun, Sean W. King, Ron Oviedo, Christopher Jezewski, John Richards, Fabio La Mattina, Lars P. H. Jeurgens, Patrick E. Hopkins
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 195302 (2020)
https://doi.org/10.1063/5.0019907
Published: November 2020
View articletitled, Interface and layer periodicity effects on the thermal conductivity of copper-based nanomultilayers with tungsten, tantalum, and tantalum nitride diffusion barriers
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Includes: Supplementary data
Journal Articles

Role of the Ta buffer layer in Ta/MnN/CoFeB stacks for maximizing exchange bias

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M. Dunz, M. Meinert
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 153902 (2020)
https://doi.org/10.1063/5.0021226
Published: October 2020
View articletitled, Role of the Ta buffer layer in Ta/MnN/CoFeB stacks for maximizing exchange bias
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Journal Articles

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

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Xiaolan Yan, Pei Li, Lei Kang, Su-Huai Wei, Bing Huang
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 085702 (2020)
https://doi.org/10.1063/1.5140692
Published: February 2020
View articletitled, First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC
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Includes: Supplementary data
Journal Articles

Modeling dislocation-related leakage currents in GaN p-n diodes

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C. A. Robertson, K. S. Qwah, Y.-R. Wu, J. S. Speck
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 245705 (2019)
https://doi.org/10.1063/1.5123394
Published: December 2019
View articletitled, Modeling dislocation-related leakage currents in GaN p-n diodes
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Journal Articles

First-principles study of diffusion and interactions of hydrogen with silicon, phosphorus, and sulfur impurities in nickel

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Priyanvada Paranjape, Priya Gopal, S. G. Srinivasan
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 125104 (2019)
https://doi.org/10.1063/1.5068777
Published: March 2019
View articletitled, First-principles study of diffusion and interactions of hydrogen with silicon, phosphorus, and sulfur impurities in nickel
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Journal Articles

Kinetic Monte Carlo simulations of stress and morphology evolution in polycrystalline thin films

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Eric Chason, Allan F. Bower
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 115304 (2019)
https://doi.org/10.1063/1.5085313
Published: March 2019
View articletitled, Kinetic Monte Carlo simulations of stress and morphology evolution in polycrystalline thin films
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Journal Articles

Investigation of in-situ co-doping by Sb and P of germanium films grown on Si(001) by molecular beam epitaxy

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M. A. Zrir, B. Alek, A. Hussein, S. A. Shaker
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 133102 (2018)
https://doi.org/10.1063/1.5009327
Published: April 2018
View articletitled, Investigation of in-situ co-doping by Sb and P of germanium films grown on Si(001) by molecular beam epitaxy
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Journal Articles

Mechanism of Na accumulation at extended defects in Si from first-principles

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Ji-Sang Park, Maria K. Y. Chan
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 161560 (2018)
https://doi.org/10.1063/1.5003385
Published: January 2018
View articletitled, Mechanism of Na accumulation at extended defects in Si from first-principles
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Journal Articles

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

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Kwang Hong Lee, Shuyu Bao, Yue Wang, Eugene A. Fitzgerald, Chuan Seng Tan
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 015302 (2018)
https://doi.org/10.1063/1.5001796
Published: January 2018
View articletitled, Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer
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Journal Articles

Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier

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D. Barba, C. Wang, A. Nélis, G. Terwagne, F. Rosei
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 161540 (2018)
https://doi.org/10.1063/1.5002693
Published: December 2017
View articletitled, Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier
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Journal Articles

Growth, structural, and magnetic properties of single-crystal full-Heusler Co2TiGe thin films

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J. A. Logan, T. L. Brown-Heft, S. D. Harrington, N. S. Wilson, A. P. McFadden, A. D. Rice, M. Pendharkar, C. J. Palmstrøm
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 213903 (2017)
https://doi.org/10.1063/1.4984311
Published: June 2017
View articletitled, Growth, structural, and magnetic properties of single-crystal full-Heusler Co2TiGe thin films
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Journal Articles

Interface matching and intermixing of thin MgO barriers and ferromagnetic layers deposited on GaAs (001)

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R. Tholapi, I. A. Karateev, B. S. Roshchin, V. E. Asadchikov, T. Slobodskyy, W. Hansen, A. L. Vasiliev
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 205308 (2017)
https://doi.org/10.1063/1.4984754
Published: May 2017
View articletitled, Interface matching and intermixing of thin MgO barriers and ferromagnetic layers deposited on GaAs (001)
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Journal Articles

Electronic and structural analysis of ultra-small-diameter metal disilicide nanowires

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Nicholas A. Lanzillo, Theo Standaert, Christian Lavoie
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 194301 (2017)
https://doi.org/10.1063/1.4983635
Published: May 2017
View articletitled, Electronic and structural analysis of ultra-small-diameter metal disilicide nanowires
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