Characteristics of ZrO2 gate dielectric deposited using Zr t–butoxide and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method

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Characteristics of ${ZrO}_{2}$ gate dielectric deposited using Zr t–butoxide and $Zr ({NEt}_{2})_{4}$ precursors by plasma enhanced atomic layer deposition method

J. Appl. Phys. 92, 5443–5447 (2002)

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Characteristics of ${ZrO}_{2}$ gate dielectric deposited using Zr t–butoxide and $Zr ({NEt}_{2})_{4}$ precursors by plasma enhanced atomic layer deposition method

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Characteristics of ${ZrO}_{2}$ gate dielectric deposited using Zr t–butoxide and $Zr ({NEt}_{2})_{4}$ precursors by plasma enhanced atomic layer deposition method