Low temperature electron mobility and concentration under the gate of AlGaN∕GaN field effect transistors | Citedby Results | Journal of Applied Physics | AIP Publishing

Skip to Main Content

Skip Nav Destination

Low temperature electron mobility and concentration under the gate of $Al Ga N ∕ Ga N$ field effect transistors

J. Appl. Phys. 100, 113726 (2006)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors

Isabel Harrysson Rodrigues
Andrei Vorobiev

IEEE Transactions on Electron Devices 69, 1786 (2022)

Geometrical magnetoresistance effect and mobility in graphene field-effect transistors

Isabel Harrysson Rodrigues
Andrey Generalov
Anamul Md Hoque
Miika Soikkeli
Anton Murros
Sanna Arpiainen
Andrei Vorobiev

Applied Physics Letters (2022) 121 (1)

Modeling of the Substrate Influence on Multielement THz Detector Operation

M. Sakhno
J. Gumenjuk-Sichevska
F. Sizov

Journal of Infrared, Millimeter, and Terahertz Waves 35, 703 (2014)

Localized and collective magnetoplasmon excitations in AlGaN/GaN-based grating-gate terahertz modulators

K. Nogajewski
J. Łusakowski
W. Knap
V. V. Popov
F. Teppe
S. L. Rumyantsev
M. S. Shur

Applied Physics Letters (2011) 99 (21)

HIGH MAGNETIC FIELD IN THz PLASMA WAVE DETECTION BY HIGH ELECTRON MOBILITY TRANSISTORS

M. SAKOWICZ
J. ŁUSAKOWSKI
K. KARPIERZ
M. GRYNBERG
G. VALUSIS

International Journal of Modern Physics B 23, 3029 (2009)

Terahertz Detection by the Entire Channel of High Electron Mobility Transistors

M. Sakowicz
J. Łusakowski
K. Karpierz
W. Knap
M. Grynberg
K. Köhler
G. Valusis
K. Gołaszewska
E. Kamińska
A. Piotrowska
P. Caban
W. Strupiński

Acta Physica Polonica A 114, 1343 (2008)

THZ DETECTION BY FIELD-EFFECT TRANSISTORS IN MAGNETIC FIELDS: SHALLOW WATER VS DEEP WATER MECHANISM OF ELECTRON PLASMA INSTABILITY

M. Sakowicz
J. Łusakowski
K. Karpierz
M. Grynberg
W. Knap
K. Köhler
G. Valušis
K. Gołaszewska
E. Kamińska
A. Piotrowska

International Journal of High Speed Electronics and Systems 18, 949 (2008)

Transport and quantum scattering time in field-effect transistors

M. Sakowicz
J. Łusakowski
K. Karpierz
M. Grynberg
B. Majkusiak

Applied Physics Letters (2007) 90 (17)

Low electron mobility of field-effect transistor determined by modulated magnetoresistance

R. Tauk
J. Łusakowski
W. Knap
A. Tiberj
Z. Bougrioua
M. Azize
P. Lorenzini
M. Sakowicz
K. Karpierz
C. Fenouillet-Beranger
M. Cassé
C. Gallon
F. Boeuf
T. Skotnicki

Journal of Applied Physics (2007) 102 (10)

Enhanced spin-orbit scattering length in narrowAlxGa1−xN∕GaNwires

Patrick Lehnen
Thomas Schäpers
Nicoleta Kaluza
Nicolas Thillosen
Hilde Hardtdegen

Physical Review B (2007) 76 (20)