Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates

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Rapid thermal annealing effects on step-graded InAlAs buffer layer and ${In}_{0.52} {Al}_{0.48} {As/In}_{0.53} {Ga}_{0.47} As$ metamorphic high electron mobility transistor structures on GaAs substrates

J. Appl. Phys. 91, 2429–2432 (2002)

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Rapid thermal annealing effects on step-graded InAlAs buffer layer and ${In}_{0.52} {Al}_{0.48} {As/In}_{0.53} {Ga}_{0.47} As$ metamorphic high electron mobility transistor structures on GaAs substrates

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Rapid thermal annealing effects on step-graded InAlAs buffer layer and ${In}_{0.52} {Al}_{0.48} {As/In}_{0.53} {Ga}_{0.47} As$ metamorphic high electron mobility transistor structures on GaAs substrates