Skip to Main Content
AIP Publishing Logo Open Menu
header search
Search
Advanced Search |Citation Search
Skip Nav Destination

“Hump” characteristics and edge effects in polysilicon thin film transistors

J. Appl. Phys. 104, 124511 (2008)
This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.
Understanding negative-bias-stress-induced instability and hump phenomenon in amorphous In–Ga–Zn–O thin-film transistors: Impact of source/drain contacts and carrier diffusion
  • Yong Zhang
  • Sashank Krishna Sriram
  • Kenji Nomura
Journal of Applied Physics (2025) 137 (18)
Enabling low-temperature processing of amorphous SiZnSnO thin-film transistors through combined Ar plasma treatment and annealing
  • Ji Ye Lee
  • Byeong-Kwon Ju
  • Sang Yeol Lee
Materials Science in Semiconductor Processing (2025) 196: 109659.
TCAD simulation methodology of total ionizing dose effects for PDSOI transistor with a hump characteristic
  • J. Lomonaco
  • N. Rostand
  • S. Martinie
  • A. Bournel
Solid-State Electronics (2024) 211: 108813.
Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors
  • Na Xie
  • Hui Zhu
  • Yiqun Zhang
  • Zeng Huang
  • Zhixuan Fang
  • Zheng Liu
  • Dong Li
  • Shiwei Feng
  • Chunsheng Guo
  • Yamin Zhang
  • Bo Liu
  • Lixing Zhou
  • Xing Liu
  • Yerong Sun
  • Zhirang Zhang
  • Yilin Li
  • Zhiwen Yao
IEEE Transactions on Electron Devices 70, 544 (2023)
Characteristics and deviation of low-temperature FD-SOI-MOSFETs using a sputtering SiO2 gate insulator
  • Wenchang Yeh
  • Masato Ohya
Japanese Journal of Applied Physics 62, SC1067 (2023)
14‐4: Enhanced Low Temperature Polycrystalline Silicon Thin‐Film Transistor Device Structure by Doping at Channel Edge
  • Seunghyun Jang
  • Byoungtaek Son
  • Myungbo Sim
  • Kihwan Kim
  • Yongsoo Lee
  • Tae Young Choi
  • Yongsu Lee
  • Byoung Kwon Choo
  • Seungin Baek
  • Yongjo Kim
SID Symposium Digest of Technical Papers 53, 151 (2022)
Fluorinated Metal-Oxide Thin-Film Transistors for Circuit Implementation on a Flexible Substrate
  • Runxiao Shi
  • Sisi Wang
  • Zhihe Xia
  • Lei Lu
  • Man Wong
IEEE Journal on Flexible Electronics 1, 58 (2022)
Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs
  • Ming-Xuan Lee
  • Jih-Chao Chiu
  • Song-Ling Li
  • Eknath Sarkar
  • Yu-Ciao Chen
  • Chia-Chun Yen
  • Tsang-Long Chen
  • Cheng-Hsu Chou
  • C. W. Liu
IEEE Journal of the Electron Devices Society (2022) 10: 301.
Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors
  • Qi Li
  • Junchen Dong
  • Dedong Han
  • Dengqin Xu
  • Jingyi Wang
  • Yi Wang
Nanomaterials 12, 1167 (2022)
Abnormal Hump and Two-Step Degradation of Top Gate a-InGaZnO TFTs Under Positive Bias Stress
  • Bo-Shen Huang
  • Ting-Chang Chang
  • Mao-Chou Tai
  • Han-Yu Chang
  • Kuan-Ju Zhou
  • Li-Chuan Sun
  • Jen-Wei Huang
  • Ming-Chen Chen
  • Hui-Chun Huang
IEEE Transactions on Electron Devices 69, 4288 (2022)
Novel channel edge doping for hump reduction in LTPS TFTs
  • Ki Woo Kim
  • Heesoo Lee
  • Hyun Jae Kim
Journal of Information Display 23, 129 (2022)
Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs
  • Yu-Zhe Zheng
  • Po-Hsun Chen
  • Ting-Chang Chang
  • Tsung-Ming Tsai
  • Kuan-Ju Zhou
  • Yu-Fa Tu
  • Yu-Xuan Wang
  • Chia-Chuan Wu
  • Yu-An Chen
  • Pei-Jun Sun
  • Juan-Jie Chen
  • Hong-Yi Tu
  • Yang-Hao Hung
  • Yu-Shan Lin
  • Fong-Min Ciou
  • Yu-Shan Shih
  • Hui-Chun Huang
IEEE Transactions on Electron Devices 69, 2423 (2022)
Investigation of Hump Behavior of Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor Under Positive Bias Stress
  • Hassan Ul Huzaibi
  • Nianduan Lu
  • Mohammad Masum Billah
  • Di Geng
  • Ling Li
IEEE Transactions on Electron Devices 69, 549 (2022)
Parasitic Current Induced by Gate Overlap in Thin-Film Transistors
  • Hyeon-Jun Lee
  • Katsumi Abe
  • June-Seo Kim
  • Won Seok Yun
  • Myoung-Jae Lee
Materials 14, 2299 (2021)
Fabrication of indium gallium zinc oxide phototransistors via oxide-mesh insertion for visible light detection
  • Dongwoo Kim
  • Yeong-gyu Kim
  • Byung Ha Kang
  • Jin Hyeok Lee
  • Jusung Chung
  • Hyun Jae Kim
Journal of Materials Chemistry C 8, 165 (2020)
Investigation of asymmetric degradation in electrical properties of a-InGaZnO thin-film transistor arrays as a function of channel width-to-length aspect ratio
  • Khushabu Agrawal
  • Vilas Patil
  • G. T. Chavan
  • Geonju Yoon
  • Jaemin Kim
  • Jinsu Park
  • Sangwoo Pae
  • JinSeok Kim
  • Eun-Chel Cho
  • Junsin Yi
Journal of Materials Science: Materials in Electronics 31, 9826 (2020)
Observation of trap-related phenomena in electrical performance of back-gated MoS2 field-effect transistors
  • Yichen Mao
  • Ailing Chang
  • Pengpeng Xu
  • Chunyu Yu
  • Wei Huang
  • Songyan Chen
  • Zhengyun Wu
  • Cheng Li
Semiconductor Science and Technology 35, 095023 (2020)
Abnormal hysteresis formation in hump region after positive gate bias stress in low-temperature poly-silicon thin film transistors
  • Hong-Yi Tu
  • Ting-Chang Chang
  • Yu-Ching Tsao
  • Mao-Chou Tai
  • Yu-Lin Tsai
  • Shin-Ping Huang
  • Yu-Zhe Zheng
  • Yu-Xuan Wang
  • Chih-Chih Lin
  • Chuan-Wei Kuo
  • Tsung-Ming Tsai
  • Chia-Chuan Wu
  • Ya-Ting Chien
  • Hui-Chun Huang
Journal of Physics D: Applied Physics 53, 405104 (2020)
Study of Positive-Gate-Bias-Induced Hump Phenomenon in Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors
  • Xuewen Shi
  • Congyan Lu
  • Xinlv Duan
  • Qian Chen
  • Hansai Ji
  • Yue Su
  • Xichen Chuai
  • Dongyang Liu
  • Ying Zhao
  • Guanhua Yang
  • Jiawei Wang
  • Nianduan Lu
  • Di Geng
  • Ling Li
  • Ming Liu
IEEE Transactions on Electron Devices 67, 1606 (2020)
Flexible low-temperature polycrystalline silicon thin-film transistors
  • T.-C. Chang
  • Y.-C. Tsao
  • P.-H. Chen
  • M.-C. Tai
  • S.-P. Huang
  • W.-C. Su
  • G.-F. Chen
Materials Today Advances (2020) 5: 100040.
Suppression of Edge Effect Induced by Positive Gate Bias Stress in Low-Temperature Polycrystalline Silicon TFTs With Channel Width Extension Over Source/Drain Regions
  • Yu-Xuan Wang
  • Mao-Chou Tai
  • Ting-Chang Chang
  • Shin-Ping Huang
  • Yu-Zhe Zheng
  • Chia-Chuan Wu
  • Yu-Shan Shih
  • Yu-An Chen
  • Pei-Jun Sun
  • I-Nien Lu
  • Hui-Chun Huang
  • Simon M. Sze
IEEE Transactions on Electron Devices 67, 5552 (2020)
Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor
  • Hyeon-Jun Lee
  • Katsumi Abe
  • Hee Yeon Noh
  • June-Seo Kim
  • Hyunki Lee
  • Myoung-Jae Lee
Scientific Reports (2019) 9 (1)
Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors
  • Shin-Ping Huang
  • Po-Hsun Chen
  • Hong-Chih Chen
  • Yu-Zhe Zheng
  • Ann-Kuo Chu
  • Yu-Ching Tsao
  • Yu-Shan Shih
  • Yu-Xuan Wang
  • Chia-Chuan Wu
  • Wei-Chih Lai
  • Ting-Chang Chang
IEEE Electron Device Letters 40, 1638 (2019)
Formation of Hump Effect Due to Top-Gate Bias Stress in Organic Thin-Film Transistors
  • Hong-Chih Chen
  • Yu-Ching Tsao
  • An-Kuo Chu
  • Hui-Chun Huang
  • Wei-Chih Lai
  • Guan-Fu Chen
  • Shin-Ping Huang
  • Ting-Chang Chang
  • Po-Hsun Chen
  • Jian-Jie Chen
  • Chuan-Wei Kuo
  • Kuan-Ju Zhou
  • Yang-Hao Hung
IEEE Electron Device Letters 40, 1941 (2019)
Enhancing Repetitive Uniaxial Mechanical Bending Endurance at ${R} = 2$ mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors
  • Shin-Ping Huang
  • Yu-Zhe Zheng
  • Ting-Chang Chang
  • Bo-Wei Chen
  • Po-Hsun Chen
  • Ann-Kuo Chu
  • Hong-Chih Chen
  • Yu-Ching Tsao
  • Min-Chen Chen
  • Wei-Han Chen
  • Terry Tai-Jui Wang
  • Jerzy Kanicki
  • Sheng-Dong Zhang
IEEE Electron Device Letters 40, 913 (2019)
Metal–interlayer–metal structured initiator containing Al/CuO reactive multilayer films that exhibits improved ignition properties
  • Shuai Fu
  • Ruiqi Shen
  • Peng Zhu
  • Yinghua Ye
Sensors and Actuators A: Physical (2019) 292: 198.
Hydrogen as a Cause of Abnormal Subchannel Formation Under Positive Bias Temperature Stress in a-InGaZnO Thin-Film Transistors
  • Yu-Chieh Chien
  • Yi-Chieh Yang
  • Yu-Ching Tsao
  • Hsiao-Cheng Chiang
  • Mao-Chou Tai
  • Yu-Lin Tsai
  • Po-Hsun Chen
  • Tsung-Ming Tsai
  • Ting-Chang Chang
IEEE Transactions on Electron Devices 66, 2954 (2019)
Characterization and Compact Modeling of Self-Aligned Short-Channel Organic Transistors
  • Miguel Torres-Miranda
  • Andreas Petritz
  • Esther Karner-Petritz
  • Christine Prietl
  • Eric Sauter
  • Michael Zharnikov
  • Herbert Gold
  • Barbara Stadlober
IEEE Transactions on Electron Devices 65, 4563 (2018)
P‐1.5: Edge Effects of Three‐Mask Elevated‐Metal Metal‐Oxide Thin‐Film Transistor and Their Elimination
  • Jiapeng Li
  • Lei Lu
  • Zhihe Xia
  • Sisi Wang
  • Hoi-Sing Kwok
  • Man Wong
SID Symposium Digest of Technical Papers 49, 531 (2018)
Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation
  • HyunJeong Kim
  • WungYeon Kim
  • Maria O'Brien
  • Niall McEvoy
  • Chanyoung Yim
  • Mario Marcia
  • Frank Hauke
  • Andreas Hirsch
  • Gyu-Tae Kim
  • Georg S. Duesberg
Nanoscale 10, 17557 (2018)
Investigation of an anomalous hump phenomenon in via-type amorphous In-Ga-Zn-O thin-film transistors under positive bias temperature stress
  • Jianwen Yang
  • Po-Yung Liao
  • Ting-Chang Chang
  • Bo-Wei Chen
  • Hui-Chun Huang
  • Wan-Ching Su
  • Hsiao-Cheng Chiang
  • Qun Zhang
Applied Physics Letters (2017) 110 (14)
Circular Structure for High Mechanical Bending Stability of a-IGZO TFTs
  • Mallory Mativenga
  • Haeyeon Jun
  • Younwoo Choe
  • Jae Gwang Um
  • Jin Jang
IEEE Journal of the Electron Devices Society 5, 453 (2017)
Vertical organic light-emitting transistor showing a high current on/off ratio through dielectric encapsulation for the effective charge pathway
  • Gyujeong Lee
  • In-Ho Lee
  • Hea-Lim Park
  • Sin-Hyung Lee
  • Jongseok Han
  • Changhee Lee
  • Chang-Min Keum
  • Sin-Doo Lee
Journal of Applied Physics (2017) 121 (2)
Positive gate bias stress-induced hump-effect in elevated-metal metal–oxide thin film transistors
  • Dong-Yu Qi
  • Dong-Li Zhang
  • Ming-Xiang Wang
Chinese Physics B 26, 128101 (2017)
Room-Temperature Fabrication of High-Performance Amorphous In–Ga–Zn–O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper
  • Honglong Ning
  • Yong Zeng
  • Yudi Kuang
  • Zeke Zheng
  • Panpan Zhou
  • Rihui Yao
  • Hongke Zhang
  • Wenzhong Bao
  • Gang Chen
  • Zhiqiang Fang
  • Junbiao Peng
ACS Applied Materials & Interfaces 9, 27792 (2017)
Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor
  • C. Besleaga
  • G.E. Stan
  • I. Pintilie
  • P. Barquinha
  • E. Fortunato
  • R. Martins
Applied Surface Science (2016) 379: 270.
Effects of Repetitive Mechanical Bending Strain on Various Dimensions of Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide
  • Bo-Wei Chen
  • Ting-Chang Chang
  • Yu-Ju Hung
  • Shin-Ping Huang
  • Po-Yung Liao
  • Chung-Yi Yang
  • Ann-Kuo Chu
  • Terry Tai-Jui Wang
  • Tsu-Chiang Chang
  • Bo-Yuan Su
  • Su-Chun Kuo
  • I-Yu Huang
IEEE Electron Device Letters 37, 1010 (2016)
Retrograde-Mask Processed Polysilicon TFT for High Performance, Planar Structure, and Stable Operation
  • Zohreh Kiaee
IEEE Electron Device Letters 36, 790 (2015)
Origin of Oxygen-Induced Abnormal Hump in Bottom-Gated Polycrystalline Zinc Oxide Thin Film Transistors
  • Kwang-Seok Jeong
  • Yu-Mi Kim
  • Ga-Won Lee
ECS Journal of Solid State Science and Technology 4, Q31 (2015)
Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress
  • Jungmin Lee
  • Sungju Choi
  • Seong Kwang Kim
  • Sung-Jin Choi
  • Dae Hwan Kim
  • Jisun Park
  • Dong Myong Kim
IEEE Electron Device Letters 36, 1047 (2015)
Equivalent Circuit Modeling for a High-Performance Large-Area Organic Photovoltaic Module
  • Chang-Hyun Kim
  • Michail J. Beliatis
  • Keyur K. Gandhi
  • Lynn J. Rozanski
  • Yvan Bonnassieux
  • Gilles Horowitz
  • S. Ravi P. Silva
IEEE Journal of Photovoltaics 5, 1100 (2015)
Compact DC Modeling of Organic Field-Effect Transistors: Review and Perspectives
  • Chang-Hyun Kim
  • Yvan Bonnassieux
  • Gilles Horowitz
IEEE Transactions on Electron Devices 61, 278 (2014)
Achieving High Performance Oxide TFT-Based Inverters by Use of Dual-Gate Configurations With Floating and Biased Secondary Gates
  • Man Ju Seok
  • Mallory Mativenga
  • Di Geng
  • Jin Jang
IEEE Transactions on Electron Devices 60, 3787 (2013)
Edge Effects in Bottom-Gate Inverted Staggered Thin-Film Transistors
  • Mallory Mativenga
  • Jae Kwang Um
  • Dong Han Kang
  • Ravi K. Mruthyunjaya
  • Jeff H. Chang
  • Gregory N. Heiler
  • Timothy J. Tredwell
  • Jin Jang
IEEE Transactions on Electron Devices 59, 2501 (2012)
Positive Gate-Bias Temperature Stability of RF-Sputtered $\hbox{Mg}_{0.05}\hbox{Zn}_{0.95}\hbox{O}$ Active-Layer Thin-Film Transistors
  • Yi-Shiuan Tsai
  • Jian-Zhang Chen
IEEE Transactions on Electron Devices 59, 151 (2012)
Gate bias-stress induced hump-effect in transfer characteristics of amorphous-indium-galium-zinc-oxide thin-fim transistors with various channel widths
  • Mallory Mativenga
  • Manju Seok
  • Jin Jang
Applied Physics Letters (2011) 99 (12)
A Two-Stage Degradation Model of p-Channel Low-Temperature Poly-Si Thin-Film Transistors Under Positive Bias Temperature Stress
  • Xiaowei Lu
  • Mingxiang Wang
  • Man Wong
IEEE Transactions on Electron Devices 58, 3501 (2011)
The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf–In–Zn–O TFTs
  • W. J. Maeng
  • Joon Seok Park
  • Hyun-Suk Kim
  • Eok Soo Kim
  • Kyoung Seok Son
  • Tae Sang Kim
  • Myungkwan Ryu
  • Sangyoon Lee
IEEE Electron Device Letters 32, 1077 (2011)
Two-Stage Degradation of p-Channel Poly-Si Thin-Film Transistors Under Dynamic Negative Bias Temperature Stress
  • Jie Zhou
  • Mingxiang Wang
  • Man Wong
IEEE Transactions on Electron Devices 58, 3034 (2011)
Degradation Model of Self-Heating Effects in Silicon-on-Glass TFTs
  • Mallory Mativenga
  • Min Hyuk Choi
  • Jin Jang
  • Ravi Mruthyunjaya
  • Timothy J. Tredwell
  • Eric Mozdy
  • Carlo Kosik-Williams
IEEE Transactions on Electron Devices 58, 2440 (2011)
  • Online ISSN 1089-7550
  • Print ISSN 0021-8979

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

 
 
  • © Copyright AIP Publishing LLC
This Feature Is Available To Subscribers Only

or Create an Account

Close Modal
Close Modal