Defect behavior during growth of heavily phosphorus doped Czochralski silicon crystals (II): Theoretical study | Citedby Results | Journal of Applied Physics | AIP Publishing

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Defect behavior during growth of heavily phosphorus doped Czochralski silicon crystals (II): Theoretical study

J. Appl. Phys. 136, 055705 (2024)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Defect behavior during growth of heavily phosphorus-doped Czochralski silicon crystals. I. Experimental study

Masataka Hourai
Yasuhito Narushima
Kazuhisa Torigoe
Naoya Nonaka
Koutaro Koga
Toshiaki Ono
Hiroshi Horie
Koji Sueoka

Journal of Applied Physics (2024) 136 (5)