Si(111) electrode has been widely used in electrochemical and photoelectrochemical studies. The potential dependent measurements of the second harmonic generation (SHG) were performed to study Si(111) electrode interface. At different azimuthal angles of the Si(111) and under different polarization combinations, the curve of the intensity of SHG with extern potential has a different form of line or parabola. Quantitative analysis showed that these differences in the potential-dependence can be explained by the isotropic and anisotropic contribution of the Si(111) electrode. The change in the isotropic and anisotropic contribution of the Si(111) electrode may be attributed to the increase in the doping concentration of Si(111) electrodes.
References
[1]
A. A.
Liu
, L.
Lin
, Y.
Lin
, and Y.
Guo
, J. Phys. Chem. C
117
, 1392
(2013
).[2]
I.
Fromondi
, H. F.
Zhu
, Z. G.
Feng
, and D.
Scherson
, J. Phys. Chem. C
118
, 27901
(2014
).[3]
M. A.
Polizzi
, R. M.
Plocinik
, and G. J.
Simpson
, J. Am. Chem. Soc.
126
, 5001
(2004
).[4]
P.
Hayes
, A. G.
Taylor
, J. A.
Levitt
, and C. P.
Wilde
, Electrochem. Commun.
5
, 883
(2003
).[5]
C.
Ohlhoff
, G.
Lpke
, C.
Meyer
, and H.
Kurz
, Phys. Rev. B
55
, 4596
(1997
).[6]
J. L.
Daschbach
, P. R.
Fischer
, D. E.
Gragson
, and G. L.
Richmond
, J. Phys. Chem.
99
, 3240
(1995
).[7]
H.
Park
, J. B.
Qi
, Y.
Xu
, G.
Lpke
, and N.
Tolk
, J. Opt.
13
, 055202
(2011
).[8]
O. A.
Aktsipetrov
, I. M.
Baranova
, L. V.
Grigor’eva
, K. N.
Evtyukhov
, E. D.
Mishina
, T. V.
Murzina
, and I. V.
Cherny̌i
, Sov. J. Quantum Electron.
21
, 854
(1991
).[9]
K.
Pedersen
, T. B.
Kristensen
, T. G.
Pedersen
, T.
Jensen
, P.
Morgen
, Z. S.
Li
, and S. V.
Hoffmann
, Surf. Sci.
523
, 21
(2003
).[10]
H. U.
Ulriksen
and K.
Pedersen
, J. Appl. Phys.
120
, 235307
(2016
).[11]
A.
Alejo-Molina
, H.
Hardhienata
, P. A.
Márquez-Aguilar
, and K.
Hingerl
, J. Opt. Soc. Am. B
34
, 1107
(2017
).[12]
Y.
Rao
, Y. S.
Tao
, and H. F.
Wang
, J. Chem. Phys.
119
, 5226
(2003
).[13]
W. K.
Zhang
, D. S.
Zheng
, Y. Y.
Xu
, H. T.
Bian
, Y.
Guo
, and H. F.
Wang
, J. Chem. Phys.
123
, 224713
(2005
).[14]
C. H.
Lee
, R. K.
Chang
, and N.
Bloembergen
, Phys. Rev. Lett.
18
, 167
(1967
).[15]
H. T.
Bian
, Y.
Guo
, and H. F.
Wang
, Phys. Chem. Chem. Phys.
20
, 29539
(2018
).[16]
P. E.
Ohno
, S. A.
Saslow
, H. F.
Wang
, F. M.
Geiger
, and K. B.
Eisenthal
, Nat. Commun.
7
, 13587
(2016
).[17]
S. A.
Mitchell
, R.
Boukherroub
, and S.
Anderson
, J. Phys. Chem. B
104
, 7668
(2000
).[18]
D.
Bodlaki
and E.
Borguet
, J. Appl. Phys.
95
, 4675
(2004
).[19]
H. W. K.
Tom
, T. F.
Heinz
, and Y. R.
Shen
, Phys. Rev. Lett.
51
, 1983
(1983
).[20]
J. O. M.
Bockris
and A. K. N.
Reddy
, Modern Electrochemistry
, 2nd Edn., New York
: Kluwer Academic Publishing
, (2002
).[21]
V.
Lehmann
, Electrochemistry of Silicon: Instrumentation, Science, Materials and Applications
, Berlin
: Wiley-VCH Verlag GmbH
, (2002
).[22]
J. M.
Lantz
and R. M.
Corn
, J. Phys. Chem.
98
, 4899
(1994
).[23]
J. M.
Lantz
and R. M.
Corn
, J. Phys. Chem.
98
, 9387
(1994
).[24]
W.
Cai
, Z.
Lin
, T.
Strother
, L. M.
Smith
, and R. J.
Hamers
, J. Phys. Chem. B
106
, 2656
(2002
).[25]
J. M.
Lantz
, R.
Baba
, and R. M.
Corn
, J. Phys. Chem.
97
, 7392
(1993
).[26]
J. L.
Fiore
, V. V.
Fomenko
, D.
Bodlaki
, and E.
Borguet
, Appl. Phys. Lett.
98
, 041905
(2011
).[27]
W. K.
Zhang
, H. F.
Wang
, and D. S.
Zheng
, Phys. Chem. Chem. Phys.
8
, 4041
(2006
).[28]
Q. S.
Wei
, D. X.
Zhou
, and H. T.
Bian
, Phys. Chem. Chem. Phys.
20
, 11758
(2018
).
This content is only available via PDF.
© 2020 Chinese Physical Society.
2020
Chinese Physical Society
You do not currently have access to this content.
