Defect-mediated processes in two-dimensional transition metal dichalcogenides have a significant influence on their carrier dynamics and transport properties, however, the detailed mechanisms remain poorly understood. Here, we present a comprehensive ultrafast study on defect-mediated carrier dynamics in ion exchange prepared few-layer MoS2 by femtosecond time-resolved Vis-NIR-MIR spectroscopy. The broadband photobleaching feature observed in the near-infrared transient spectrum discloses that the mid-gap defect states are widely distributed in few-layer MoS2 nanosheets. The processes of fast trapping of carriers by defect states and the following nonradiative recombination of trapped carriers are clearly revealed, demonstrating the mid-gap defect states play a significant role in the photoinduced carrier dynamics. The positive to negative crossover of the signal observed in the mid-infrared transient spectrum further uncovers some occupied shallow defect states distributed at less than 0.24 eV below the conduction band minimum. These defect states can act as effective carrier trap centers to assist the nonradiative recombination of photo-induced carriers in few-layer MoS2 on the picosecond time scale.
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October 2020
Research Article|
October 01 2020
Unveiling defect-mediated carrier dynamics in few-layer MoS2 prepared by ion exchange method via ultrafast Vis-NIR-MIR spectroscopy†
Zhen Chi;
Zhen Chi
a
The Laboratory of Soft Matter
Physics, Beijing National Laboratory for Condensed Matter Physics, Institute
of Physics, Chinese Academy of Sciences
, Beijing 100190, China
c
Institute of Photo-biophysics,
School of Physics and Electronics
, Henan University, Kaifeng
475004, China
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Hui-hui Chen;
Hui-hui Chen
b
Department of Materials Physics
and Chemistry, Beijing Key Laboratory of Construction Tailorable Advanced
Functional Materials and Green Applications, School of Materials Science and
Engineering, Beijing Institute of Technology Institution
,
Beijing 100081, China
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Zhuo Chen;
Zhuo Chen
b
Department of Materials Physics
and Chemistry, Beijing Key Laboratory of Construction Tailorable Advanced
Functional Materials and Green Applications, School of Materials Science and
Engineering, Beijing Institute of Technology Institution
,
Beijing 100081, China
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Hai-long Chen
Hai-long Chen
*
a
The Laboratory of Soft Matter
Physics, Beijing National Laboratory for Condensed Matter Physics, Institute
of Physics, Chinese Academy of Sciences
, Beijing 100190, China
d
Songshan Lake Materials
Laboratory
, Dongguan 523808, China
*Author to whom correspondence should be
addressed. E-mail: hlchen@iphy.ac.cn
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*Author to whom correspondence should be
addressed. E-mail: hlchen@iphy.ac.cn
†
Part of the special issue for “the Chinese Chemical Society’s 16th National Chemical Dynamics Symposium”.
Chin. J. Chem. Phys. 33, 547–553 (2020)
Article history
Received:
July 11 2020
Accepted:
September 02 2020
Citation
Zhen Chi, Hui-hui Chen, Zhuo Chen, Hai-long Chen; Unveiling defect-mediated carrier dynamics in few-layer MoS2 prepared by ion exchange method via ultrafast Vis-NIR-MIR spectroscopy. Chin. J. Chem. Phys. 1 October 2020; 33 (5): 547–553. https://doi.org/10.1063/1674-0068/cjcp2007123
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