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The Dawn of Gallium Oxide Microelectronics

Gallium oxide, with its large band gap, has emerged as a promising candidate. In this new guest editorial, researchers Masataka Higashiwaki and Gregg Jessen provide an overview of recent research on this exciting material. Many of these results have been published in Applied Physics Letters, making it the home of Ga₂O₃ research.

SEMICONDUCTORS

Acceptor doping of β-Ga₂O₃ by Mg and N ion implantations

Man Hoi Wong; Chia-Hung Lin; Akito Kuramata; Shigenobu Yamakoshi; Hisashi Murakami; Yoshinao Kumagai; Masataka Higashiwaki

10.1063/1.5050040

SEMICONDUCTORS

Donors and deep acceptors in β-Ga₂O₃

Adam T. Neal; Shin Mou; Subrina Rafique; Hongping Zhao; Elaheh Ahmadi; James S. Speck; Kevin T. Stevens; John D. Blevins; Darren B. Thomson; Neil Moser; Kelson D. Chabak; Gregg H. Jessen

10.1063/1.5034474

SEMICONDUCTORS

Structural and electronic properties of Ga₂O₃-Al₂O₃ alloys

Hartwin Peelaers; Joel B. Varley; James S. Speck; Chris G. Van de Walle

10.1063/1.5036991

DEVICE PHYSICS

Demonstration of β-(Al_xGa_1-x)₂O₃/Ga₂O₃ double heterostructure field effect transistors

Yuewei Zhang; Chandan Joishi; Zhanbo Xia; Mark Brenner; Saurabh Lodha; Siddharth Rajan

10.1063/1.5037095

DEVICE PHYSICS

Demonstration of high mobility and quantum transport in modulation-doped β-(Al_xGa_1-x)₂O₃/Ga₂O₃ heterostructures

Yuewei Zhang; Adam Neal; Zhanbo Xia; Chandan Joishi; Jared M. Johnson; Yuanhua Zheng; Sanyam Bajaj; Mark Brenner; Donald Dorsey; Kelson Chabak; Gregg Jessen; Jinwoo Hwang; Shin Mou; Joseph P. Heremans; Siddharth Rajan

10.1063/1.5025704

SEMICONDUCTORS

Effect of 1.5 MeV electron irradiation on β-Ga₂O₃ carrier lifetime and diffusion length

Jonathan Lee; Elena Flitsiyan; Leonid Chernyak; Jiancheng Yang; Fan Ren; Stephen J. Pearton; Boris Meyler; Y. Joseph Salzman

10.1063/1.5011971

EDITORIALS

Guest Editorial: The dawn of gallium oxide microelectronics

Masataka Higashiwaki; Gregg H. Jessen

10.1063/1.5017845

SEMICONDUCTORS

Iron and intrinsic deep level states in Ga₂O₃

M. E. Ingebrigtsen; J. B. Varley; A. Yu. Kuznetsov; B. G. Svensson; G. Alfieri; A. Mihaila; U. Badstübner; L. Vines

10.1063/1.5020134

SEMICONDUCTORS

On the feasibility of p-type Ga₂O₃

Alexandros Kyrtsos; Masahiko Matsubara; Enrico Bellotti

10.1063/1.5009423

SEMICONDUCTORS

Point defect induced degradation of electrical properties of Ga₂O₃ by 10 MeV proton damage

A. Y. Polyakov; N. B. Smirnov; I. V. Shchemerov; E. B. Yakimov; Jiancheng Yang; F. Ren; Gwangseok Yang; Jihyun Kim; A. Kuramata; S. J. Pearton

10.1063/1.5012993

DEVICE PHYSICS

Radiation hardness of β-Ga₂O₃ metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

Man Hoi Wong; Akinori Takeyama; Takahiro Makino; Takeshi Ohshima; Kohei Sasaki; Akito Kuramata; Shigenobu Yamakoshi; Masataka Higashiwaki

10.1063/1.5017810

SEMICONDUCTORS

Sub-band-gap absorption in Ga₂O₃

Hartwin Peelaers; Chris G. Van de Walle

10.1063/1.5001323

SEMICONDUCTORS

β-Ga₂O₃ on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

Hong Zhou; Kerry Maize; Gang Qiu; Ali Shakouri; Peide D. Ye

10.1063/1.5000735

DEVICE PHYSICS

Modulation-doped β-(Al_0.2Ga_0.8)₂O₃/Ga₂O₃ field-effect transistor

Sriram Krishnamoorthy; Zhanbo Xia; Chandan Joishi; Yuewei Zhang; Joe McGlone; Jared Johnson; Mark Brenner; Aaron R. Arehart; Jinwoo Hwang; Saurabh Lodha; Siddharth Rajan

10.1063/1.4993569

SEMICONDUCTORS

Highly conductive homoepitaxial Si-doped Ga₂O₃ films on (010) β-Ga₂O₃ by pulsed laser deposition

Kevin D. Leedy; Kelson D. Chabak; Vladimir Vasilyev; David C. Look; John J. Boeckl; Jeff L. Brown; Stephen E. Tetlak; Andrew J. Green; Neil A. Moser; Antonio Crespo; Darren B. Thomson; Robert C. Fitch; Jonathan P. McCandless; Gregg H. Jessen

10.1063/1.4991363

PHOTONICS AND OPTOELECTRONICS

High responsivity in molecular beam epitaxy grown β-Ga₂O₃ metal semiconductor metal solar blind deep-UV photodetector

Anamika Singh Pratiyush; Sriram Krishnamoorthy; Swanand Vishnu Solanke; Zhanbo Xia; Rangarajan Muralidharan; Siddharth Rajan; Digbijoy N. Nath

10.1063/1.4984904

SEMICONDUCTORS

Influence of metal choice on (010) β-Ga₂O₃ Schottky diode properties

Esmat Farzana; Zeng Zhang; Pran K. Paul; Aaron R. Arehart; Steven A. Ringel

10.1063/1.4983610

SEMICONDUCTORS

High reverse breakdown voltage Schottky rectifiers without edge termination on Ga₂O₃

Jiancheng Yang; Shihyun Ahn; F. Ren; S. J. Pearton; Soohwan Jang; Jihyun Kim; A. Kuramata

10.1063/1.4983203

DEVICE PHYSICS

High pulsed current density β-Ga₂O₃ MOSFETs verified by an analytical model corrected for interface charge

Neil A. Moser; Jonathan P. McCandless; Antonio Crespo; Kevin D. Leedy; Andrew J. Green; Eric R. Heller; Kelson D. Chabak; Nathalia Peixoto; Gregg H. Jessen

10.1063/1.4979789

DEVICE PHYSICS

1-kV vertical Ga₂O₃ field-plated Schottky barrier diodes

Keita Konishi; Ken Goto; Hisashi Murakami; Yoshinao Kumagai; Akito Kuramata; Shigenobu Yamakoshi; Masataka Higashiwaki

10.1063/1.4977857

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The Dawn of Gallium Oxide Microelectronics

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The Dawn of Gallium Oxide Microelectronics

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