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Ferroelectricity in Hafnium Oxide: Materials and Devices
Since the unexpected discovery of ferroelectricity in hafnium oxide-based materials, the interest in this topic is continuously on the rise, both from basic science and application-oriented research sides. There are still many missing links to fully understand how the ferroelectric phase in hafnium oxide-based materials is formed and how it can be precisely controlled. The possibility to easily integrate a ferroelectric into a CMOS process allows for many new device concept while topics of variability and reliability still need to be solved. The special topic will deal with all aspects of ferroelectricity in hafnium oxide-based materials.
Guest Editors: Thomas Mikolajick, Uwe Schroeder, and Min Hyuk Park

DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Antiferroelectric properties of ZrO2 ultra-thin films prepared by atomic layer deposition
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Xuan Luo; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor
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Carlotta Gastaldi; Matteo Cavalieri; Ali Saeidi; Eamon O'Connor; Sadegh Kamaei; Teodor Rosca; Igor Stolichnov; Adrian Mihai Ionescu
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Tony Schenk; Andreja Bencan; Goran Drazic; Oana Condurache; Nathalie Valle; Brahime El Adib; Naveen Aruchamy; Torsten Granzow; Emmanuel Defay; Sebastjan Glinsek
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Solution processed high performance ferroelectric Hf0.5Zr0.5O2 thin film transistor on glass substrate
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Md. Mehedi Hasan; Chang Won Ahn; Tae Heon Kim; Jin Jang
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Differential charge boost in hysteretic ferroelectric–dielectric heterostructure capacitors at steady state
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Nujhat Tasneem; Prasanna Venkatesan Ravindran; Zheng Wang; Jorge Gomez; Jae Hur; Shimeng Yu; Suman Datta; Asif Islam Khan
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon
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Jaidah Mohan; Heber Hernandez-Arriaga; Yong Chan Jung; Takashi Onaya; Chang-Yong Nam; Esther H. R. Tsai; Si Joon Kim; Jiyoung Kim
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Nonlinear domain wall velocity in ferroelectric Si-doped HfO2 thin film capacitors
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So Yeon Lim; Min Sun Park; Ahyoung Kim; Sang Mo Yang
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Identification of structural phases in ferroelectric hafnium zirconium oxide by density-functional-theory-assisted EXAFS analysis
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Mehmet Alper Sahiner; Rory J. Vander Valk; Joshua Steier; Jared Savastano; Stephen Kelty; Bruce Ravel; Joseph C. Woicik; Yohei Ogawa; Kristin Schmidt; Eduard A. Cartier; Jean L. Jordan-Sweet; Christian Lavoie; Martin M. Frank
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia
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Sean R. C. McMitchell; Sergiu Clima; Nicolo' Ronchi; Kaustuv Banerjee; Umberto Celano; Mihaela Popovici; Luca Di Piazza; Geert Van den Bosch; Jan Van Houdt
LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES
Electroresistance effect in MoS2-Hf0.5Zr0.5O2 heterojunctions
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P. Chaudhary; P. Buragohain; M. Kozodaev; S. Zarubin; V. Mikheev; A. Chouprik; A. Lipatov; A. Sinitskii; A. Zenkevich; A. Gruverman
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
J. Bouaziz; P. Rojo Romeo; N. Baboux; B. Vilquin
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors
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T. Francois; L. Grenouillet; J. Coignus; N. Vaxelaire; C. Carabasse; F. Aussenac; S. Chevalliez; S. Slesazeck; C. Richter; P. Chiquet; M. Bocquet; U. Schroeder; T. Mikolajick; F. Gaillard; E. Nowak
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
In situ heating studies on temperature-induced phase transitions in epitaxial Hf0.5Zr0.5O2/La0.67Sr0.33MnO3 heterostructures
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Pavan Nukala; Majid Ahmadi; Jordi Antoja-Lleonart; Sytze de Graaf; Yingfen Wei; Henny W. Zandbergen; Bart J. Kooi; Beatriz Noheda
PERSPECTIVES
Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing
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Evelyn T. Breyer; Halid Mulaosmanovic; Thomas Mikolajick; Stefan Slesazeck
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Ab initio interphase characteristics in HfO2 and ZrO2 and nucleation of the polar phase
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Max Falkowski; Alfred Kersch
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300 °C by inserting TiO2 interlayers
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Yuanshen Qi; Xianbin Xu; Igor Krylov; Moshe Eizenberg
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Oxide semiconductor-based ferroelectric thin-film transistors for advanced neuromorphic computing
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Min-Kyu Kim; Ik-Jyae Kim; Jang-Sik Lee
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Lutz Baumgarten; Thomas Szyjka; Terence Mittmann; Monica Materano; Yury Matveyev; Christoph Schlueter; Thomas Mikolajick; Uwe Schroeder; Martina Müller
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Glen Walters; Paul Chojecki; Zane Forrester; Toshikazu Nishida
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Unexpectedly large remanent polarization of Hf0.5Zr0.5O2 metal–ferroelectric–metal capacitor fabricated without breaking vacuum
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Younghwan Lee; H. Alex Hsain; Shelby S. Fields; Samantha T. Jaszewski; Madison D. Horgan; Patrick G. Edgington; Jon F. Ihlefeld; Gregory N. Parsons; Jacob L. Jones