Ferroelectricity in Hafnium Oxide: Materials and Devices

Since the unexpected discovery of ferroelectricity in hafnium oxide-based materials, the interest in this topic is continuously on the rise, both from basic science and application-oriented research sides. There are still many missing links to fully understand how the ferroelectric phase in hafnium oxide-based materials is formed and how it can be precisely controlled. The possibility to easily integrate a ferroelectric into a CMOS process allows for many new device concept while topics of variability and reliability still need to be solved. The special topic will deal with all aspects of ferroelectricity in hafnium oxide-based materials.

Guest Editors: Thomas Mikolajick, Uwe Schroeder, and Min Hyuk Park