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Developing SiGeSn Technology: Materials and Devices

This special topic collection is dedicated to recent progress and reviews of the science, engineering, and technology development of SiGeSn alloys and related materials, as well as devices, and applications incorporating them. This collection includes research presented at the 6th Tri-Service Workshop on GeSn and SiGeSn as well as other articles that were not presented at the conference but were submitted to the collection.

Guest Editors:

Bruce Claflin, AFRL

Jifeng Liu, Dartmouth College

Bridget Rogers, Vanderbilt University

Mark Wistey, Texas State University

Electronic and Optoelectronic Materials, Devices and Processing

Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys

Jibesh K. Saha; Saif A. A. Taqy; Pallab K. Sarkar; Imteaz Rahaman; Augustus W. Arbogast; Tuhin Dey; Andrei Dolocan; Md. Reaz Rahman Munna; Khorshed Alam; Daniel Wasserman; Seth R. Bank; Mark A. Wistey

https://doi.org/10.1116/6.0003739

Electronic and Optoelectronic Materials, Devices and Processing

Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor

Nicholas Rosson; Sudip Acharya; Alec M. Fischer; Bria Collier; Abdulla Ali; Ali Torabi; Wei Du; Shui-Qing Yu; Robin C. Scott

https://doi.org/10.1116/6.0003798

Electronic and Optoelectronic Materials, Devices and Processing

Infrared optical properties of SiGeSn and GeSn layers grown by molecular beam epitaxy

Glenn G. Jernigan; John P. Murphy; Nadeemullah A. Mahadik; Alex J. Grede; Eric M. Jackson; Jill A. Nolde

https://doi.org/10.1116/6.0003585

Electronic and Optoelectronic Materials, Devices and Processing

Optical and electronic properties of Ge_1−xSn_x/Si alloys grown by remote plasma-enhanced chemical vapor deposition

Kevin K. Choe; Daniel Felker; Bruce Claflin; Gordon Grzybowski; Christina L. Dugan

https://doi.org/10.1116/6.0003759

Electronic and Optoelectronic Materials, Devices and Processing

Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire, and fused silica substrates

B. Claflin; G. J. Grzybowski; S. Zollner; B. R. Rogers; T. A. Cooper; D. C. Look

https://doi.org/10.1116/6.0003689

Electronic and Optoelectronic Materials, Devices and Processing

GaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting

Jie Zhou; Haibo Wang; Po Rei Huang; Shengqiang Xu; Yang Liu; Jiarui Gong; Jianping Shen; Daniel Vicent; Samuel Haessly; Alireza Abrand; Parsian K. Mohseni; Munho Kim; Shui-Qing Yu; Guo-En Chang; Xiao Gong; Zhenqiang Ma

https://doi.org/10.1116/6.0003619

Electronic and Optoelectronic Materials, Devices and Processing

Magneto-transport study on Sn-rich Sn_1−xGe_x thin films enabled by CdTe buffer layer

Rabindra Basnet; Dinesh Upreti; Tyler T. McCarthy; Zheng Ju; Allison M. McMinn; M. M. Sharma; Yong-Hang Zhang; Jin Hu

https://doi.org/10.1116/6.0003564

Electronic and Optoelectronic Materials, Devices and Processing

X-ray photoelectron spectroscopy surface oxidation study of remote plasma-enhanced chemical vapor deposition-grown Ge_1−xSn_x/Si alloys

Kevin Choe; Jeremy Hunter; Christopher Sutphin; Daniel Felker; Bruce Claflin; Gordon Grzybowski; Christina Dugan

https://doi.org/10.1116/6.0003688

Nanoscale Science and Technology

Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications

Hryhorii Stanchu; Grey Abernathy; Joshua Grant; Fernando M. de Oliveira; Yuriy I. Mazur; Jifeng Liu; Wei Du; Baohua Li; Gregory J. Salamo; Shui-Qing Yu

https://doi.org/10.1116/6.0003734

Measurement and Characterization

In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes

Joshua M. Grant; Enbo Yang; Narges Masoumi; Alexander Golden; Joe Margetis; Andrew Chizmeshya; Wei Du; Shui-Qing Yu

https://doi.org/10.1116/6.0003566

Electronic and Optoelectronic Materials, Devices and Processing

Compositional dependence of direct transition energies in Si_xGe_1−x−ySn_y alloys lattice-matched to Ge/GaAs

Phoebe M. Pearce; Sheau Wei Ong; Andrew D. Johnson; Eng Soon Tok; Nicholas J. Ekins-Daukes

https://doi.org/10.1116/6.0003737

Measurement and Characterization

Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods

X. Huang; S. Q. Lim; T. Ratcliff; L. A. Smillie; G. J. Grzybowski; B. B. Claflin; J. M. Warrender; J. S. Williams

https://doi.org/10.1116/6.0003668

Electronic and Optoelectronic Materials, Devices and Processing

Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications

Haochen Zhao; Suho Park; Guangyang Lin; Yuying Zhang; Tuofu Zhama; Chandan Samanta; Lorry Chang; Xiaofeng Zhu; Xu Feng; Kevin O. Díaz-Aponte; Lin Cong; Yuping Zeng

https://doi.org/10.1116/6.0003561

Electronic and Optoelectronic Materials, Devices and Processing

Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling

Sengunthar Karthikeyan; Mantu K. Hudait

https://doi.org/10.1116/6.0003563

Electronic and Optoelectronic Materials, Devices and Processing

Molecular beam epitaxy growth and characterization of GePb alloys

Tyler T. McCarthy; Allison M. McMinn; Xiaoyang Liu; Razine Hossain; Xin Qi; Zheng Ju; Mark Mangus; Shui-Qing Yu; Yong-Hang Zhang

https://doi.org/10.1116/6.0003567

Microelectronic and Nanoelectronic Devices

Group-IV based pin photodetectors for C-band application

Michael Oehme; Maurice Wanitzek; Christian Spieth; Lukas Seidel; Michael Hack; Erich Kasper; Daniel Schwarz

https://doi.org/10.1116/6.0003556

Letters

Effects of high-temperature annealing on vacancy complexes and luminescence properties in multilayer periodic structures with elastically strained GeSiSn layers

Vyacheslav Timofeev; Ilya Skvortsov; Vladimir Mashanov; Alexandr Nikiforov; Dmitry Kolyada; Dmitry Firsov; Oleg Komkov; Samir Samadov; Alexey Sidorin; Oleg Orlov

https://doi.org/10.1116/6.0003557

Measurement and Characterization

Effects of ion implantation with arsenic and boron in germanium-tin layers

Sylvester Amoah; Hryhorii Stanchu; Grey Abernathy; Serhii Kryvyi; Fernando M. De Oliveira; Yuriy I. Mazur; Shangda Li; Shang Liu; Jifeng Liu; Wei Du; Baohua Li; Gregory Salamo; Shui-Qing Yu

https://doi.org/10.1116/6.0003565

Measurement and Characterization