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Atomic Layer Deposition (ALD)

Each year, in concert with the annual AVS International Conference on Atomic Layer Deposition (ALD), the Journal of Vacuum Science and Technology A publishes a collection of articles covering the most recent developments and experimental studies in ALD. The collection includes papers presented at the ALD 2022 meeting held on June 26-29, 2022 in Ghent, Belgium, as well as other ALD research articles that were not presented at the conference but were submitted to the collection. The collection features articles dedicated to the science and technology of atomic layer controlled deposition.

Image credit: Zecheng Wu, Yu Zhang, Shiqiang Lu, Rongxu Bai, Na Gao, Kai Huang, Hao Zhu, Shen Hu, Qingqing Sun, David Wei Zhang, Xingwei Ding, Jack C. Lee, and Li Ji, JVST A 40, 042402 (2022).

In situ analysis of nucleation reactions during TiCl₄/H₂O atomic layer deposition on SiO₂ and H-terminated Si surfaces treated with a silane small molecule inhibitor

Jan-Willem J. Clerix; Golnaz Dianat; Annelies Delabie; Gregory N. Parsons

10.1116/6.0002493

Atomic Layer Deposition (ALD)

Surface functionalization of microporous carbon fibers by vapor phase methods for CO₂ capture

Stephan Prünte; Gerben van Straaten; Dries van Eyck; Oscar Diaz-Morales; Jeroen Van Dijck; Hans de Neve; Mariadriana Creatore

10.1116/6.0002419

Atomic Layer Deposition (ALD)

Area selective atomic layer deposition of SnO₂ as an etch resist in fluorine based processes

Xin Yang; Himamshu Nallan; Brennan M. Coffey; John G. Ekerdt

10.1116/6.0002429

Atomic Layer Deposition (ALD)

Conductive TiN thin films grown by plasma-enhanced atomic layer deposition: Effects of N-sources and thermal treatments

Clémence Badie; Héloïse Tissot; Beniamino Sciacca; Maïssa K. Barr; Julien Bachmann; Christophe Vallée; Gaël Gautier; Thomas Defforge; Vincent Astie; Jean-Manuel Decams; Mikhael Bechelany; Lionel Santinacci

10.1116/6.0002288

Atomic Layer Deposition (ALD)

Reversible alteration of 3D printed polymer properties via infiltration of alumina by atomic layer deposition

Atilla C. Varga; Seán T. Barry

10.1116/6.0002397

Letters

On the limitations of thermal atomic layer deposition of InN using ammonia

Karl Rönnby; Henrik Pedersen; Lars Ojamäe

10.1116/6.0002355

Atomic Layer Deposition (ALD)

Atomic layer deposition of Cu₂O using copper acetylacetonate

Gabriel Bartholazzi; M. M. Shehata; Daniel H. Macdonald; Lachlan E. Black

10.1116/6.0002238

Atomic Layer Deposition (ALD)

In vacuo cluster tool for studying reaction mechanisms in atomic layer deposition and atomic layer etching processes

Heta-Elisa Nieminen; Mykhailo Chundak; Mikko J. Heikkilä; Paloma Ruiz Kärkkäinen; Marko Vehkamäki; Matti Putkonen; Mikko Ritala

10.1116/6.0002312

Atomic Layer Deposition (ALD)

Plasma-enhanced atomic layer deposition of WO₃-SiO₂ films using a heteronuclear precursor

Kamesh Mullapudi; Konner E. K. Holden; Jessica L. Peterson; Charles L. Dezelah; Daniel F. Moser; Ravindra K. Kanjolia; Douglas J. Tweet; John F. Conley, Jr

10.1116/6.0002214

Atomic Layer Deposition (ALD)

Cut-and-pasting ligands: The structure/function relationships of a thermally robust Mo(VI) precursor

Michael A. Land; Dexter A. Dimova; Katherine N. Robertson; Seán T. Barry

10.1116/6.0002254

Atomic Layer Deposition (ALD)

Molecular layer deposition of alucone in high aspect ratio trenches: The effect of TMA outgassing on step-coverage

Hardik Jain; Mariadriana Creatore; Paul Poodt

10.1116/6.0002249

Surfaces and Interfaces

Nucleation and growth mechanism for atomic layer deposition of Al₂O₃ on two-dimensional WS₂ monolayer

Tsu-Ting Lee; Kashi Chiranjeevulu; Sireesha Pedaballi; Daire Cott; Annelies Delabie; Chang-Fu Dee; Edward Yi Chang

10.1116/6.0001913

Atomic Layer Deposition (ALD)

Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition

Oili M. E. Ylivaara; Andreas Langner; Satu Ek; Jari Malm; Jaakko Julin; Mikko Laitinen; Saima Ali; Sakari Sintonen; Harri Lipsanen; Timo Sajavaara; Riikka L. Puurunen

10.1116/6.0002095

Atomic Layer Deposition (ALD)