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Atomic Layer Deposition (ALD)

Each year, the Journal of Vacuum Science and Technology A publishes a collection of articles covering the most recent developments and experimental studies in ALD. The Collection features articles dedicated to the science and technology of atomic layer controlled deposition.

Image Credit: Sara Kuraitis, Donghyeon Kang, Anil U. Mane, Hua Zhou, Jake Soares, Jeffrey W. Elam, and Elton Graugnard, JVST A 39 (3), 10.1116/6.0000847, (2021).

Atomic layer deposition of lithium metaphosphate from H₃PO₄ and P₄O₁₀ facilitated via direct liquid injection: Experiment and theory

Ivan Kundrata; Antónia Mošková; Martin Moško; Matej Mičušík; Edmund Dobročka; Karol Fröhlich

10.1116/6.0001255

Atomic Layer Deposition (ALD)

Molecular layer deposition of Nylon 2,6 polyamide polymer on flat and particle substrates in an isothermal enclosure containing a rotary reactor

Tyler J. Myers; Steven M. George

10.1116/6.0001162

Atomic Layer Deposition (ALD)

Characteristics of carbon-containing low-k dielectric SiCN thin films deposited via remote plasma atomic layer deposition

Chanwon Jung; Seokhwi Song; Hyunwoo Park; Youngjoon Kim; Eun Jong Lee; Sung Gwon Lee; Hyeongtag Jeon

10.1116/6.0000887

Atomic Layer Deposition (ALD)

Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study

Romel Hidayat; Hye-Lee Kim; Hohoon Kim; Younghun Byun; Jongsoo Lee; Won-Jun Lee

10.1116/6.0000796

Atomic Layer Deposition (ALD)

(^tBuN)SiMe₂NMe₂—A new N,N′-κ₂-monoanionic ligand for atomic layer deposition precursors

Matthew B. E. Griffiths; David Zanders; Michael A. Land; Jason D. Masuda; Anjana Devi; Seán T. Barry

10.1116/6.0000795

Atomic Layer Deposition (ALD)

Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors

Su-Hwan Choi; Hyun-Jun Jeong; TaeHyun Hong; Yong Hwan Na; Chi Kwon Park; Myung Yong Lim; Seong Hoon Jeong; Jun Hyung Lim; Jin-Seong Park

10.1116/6.0000842

Letters

Stoichiometry controlled homogeneous ternary oxide growth in showerhead atomic layer deposition reactor and application for Zr_xHf_1−xO₂

Triratna Muneshwar; Doug Barlage; Ken Cadien

10.1116/6.0000856

Atomic Layer Deposition (ALD)

Atomic layer deposition of sodium fluoride thin films

Sara Kuraitis; Donghyeon Kang; Anil U. Mane; Hua Zhou; Jake Soares; Jeffrey W. Elam; Elton Graugnard

10.1116/6.0000847

Atomic Layer Deposition (ALD)

Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition

Maximilian Kolhep; Cheng Sun; Jürgen Bläsing; Björn Christian; Margit Zacharias

10.1116/6.0000793

Atomic Layer Deposition (ALD)

Phosphites as precursors in atomic layer deposition thin film synthesis

Kristian B. Kvamme; Amund Ruud; Kristian Weibye; Timo Sajavaara; Ola Nilsen

10.1116/6.0000844

Atomic Layer Deposition (ALD)

Mechanism for growth initiation on aminosilane-functionalized SiO₂ during area-selective atomic layer deposition of ZrO₂

Wanxing Xu; Paul C. Lemaire; Kashish Sharma; Ryan J. Gasvoda; Dennis M. Hausmann; Sumit Agarwal

10.1116/6.0000699

Atomic Layer Deposition (ALD)

Atomic layer deposition of AlN using atomic layer annealing—Towards high-quality AlN on vertical sidewalls

Elmeri Österlund; Heli Seppänen; Kristina Bespalova; Ville Miikkulainen; Mervi Paulasto-Kröckel

10.1116/6.0000724

Atomic Layer Deposition (ALD)

Real-time in situ process monitoring and characterization of GaN films grown on Si (100) by low-temperature hollow-cathode plasma-atomic layer deposition using trimethylgallium and N₂/H₂ plasma

Deepa Shukla; Adnan Mohammad; Saidjafarzoda Ilhom; Brian G. Willis; Ali Kemal Okyay; Necmi Biyikli

10.1116/6.0000706

Atomic Layer Deposition (ALD)

Evaluation of TiO₂ and ZnO atomic layer deposition coated polyamide 66 fabrics for photocatalytic activity and antibacterial applications

Halil I. Akyildiz; Sumeyye Diler; Shafiqul Islam

10.1116/6.0000761

Atomic Layer Deposition (ALD)

Atomic layer deposition of TbF₃ thin films

Elisa Atosuo; Juha Ojala; Mikko J. Heikkilä; Miika Mattinen; Kenichiro Mizohata; Jyrki Räisänen; Markku Leskelä; Mikko Ritala

10.1116/6.0000790

Perspectives

Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al₂O₃ by trimethylaluminum

Tyler J. Myers; Austin M. Cano; Diane K. Lancaster; Joel W. Clancey; Steven M. George

10.1116/6.0000680

Atomic Layer Deposition (ALD)

Atomic layer deposition of hafnium and zirconium oxyfluoride thin films

Neha Mahuli; Andrew S. Cavanagh; Steven M. George

10.1116/6.0000731

Atomic Layer Deposition (ALD)

Thermal ranges and figures of merit for gold-containing precursors for atomic layer deposition

Matthew B. E. Griffiths; Zachary S. Dubrawski; Peter G. Gordon; Marcel Junige; Seán T. Barry

10.1116/6.0000707

Atomic Layer Deposition (ALD)

Surface ligand removal in atomic layer deposition of GaN using triethylgallium

Petro Deminskyi; Chih-Wei Hsu; Babak Bakhit; Polla Rouf; Henrik Pedersen

10.1116/6.0000752

Atomic Layer Deposition (ALD)

Ultra-thin Al₂O₃ capped with SiN_x enabling implied open-circuit voltage reaching 720 mV on industrial p-type Cz c-Si wafers for passivated emitter and rear solar cells

Gamze Kökbudak; Ahmet E. Keçeci; Hisham Nasser; Raşit Turan

10.1116/6.0000692

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Atomic Layer Deposition (ALD)

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