Novel Epitaxy of Functional Materials
Epitaxy of single-crystalline semiconductors lay the foundations for advanced electronics and optoelectronics by providing the active materials for devices. To achieve the highest device performance, single-crystalline films with minimal dislocation density are desired. Conventional approaches have limitations because of lattice mismatch and thermal expansion mismatch. Accordingly, several advanced approaches have been developed, such as low-temperature buffer approach, lattice-engineered buffer approach, metamorphic buffer approach, epitaxial lateral overgrowth, domain-matched epitaxy, van der Waals epitaxy, and remote epitaxy.
To achieve complex heterostructures with large lattice mismatch, researchers have developed alternative approaches such as lift-transfer and layer transfer, which give the freedom to transfer epitaxial materials onto target substrates. In this Special Topic, we address current progress and challenges in advanced epitaxy.
Guest Editors: Jeehwan Kim, Gyu-Chul Yi, Abdallah Ougazzaden, and Jian Shi