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Defects in Semiconductors 2020

Defects play key roles in a range of materials. Applications include silicon chips, energy-efficient solar cells, and light-emitting diodes, as well as emerging areas such as quantum computing and 2D materials. Advances in thin-film growth, microscopy, spectroscopy, and theory are leading to an unprecedented glimpse into atomic-level properties of point and line defects. This Collection on Defects in Semiconductors provides a valuable forum where researchers studying the fundamentals of defects in semiconductors can share their most recent and novel findings.

Guest Editors: Matthew D. McCluskey and Anderson Janotti

Physics of Semiconductors

Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon

Kunal Mukherjee; Jennifer Selvidge; Daehwan Jung; Justin Norman; Aidan A. Taylor; Mike Salmon; Alan Y. Liu; John E. Bowers; Robert W. Herrick

10.1063/1.5143606

Photonics, Plasmonics, Photovoltaics, Lasers, Optical Materials and Phenomena

Defect properties of solar cells with layers of GaP based dilute nitrides grown by molecular beam epitaxy

Artem I. Baranov; Alexander S. Gudovskikh; Anton Yu. Egorov; Dmitry A. Kudryashov; Sylvain Le Gall; Jean-Paul Kleider

10.1063/1.5134681

Photonics, Plasmonics, Photovoltaics, Lasers, Optical Materials and Phenomena

Enhancement of Er luminescence in microdisk resonators made of Er,O-codoped GaAs

R. Higashi; M. Ogawa; J. Tatebayashi; N. Fujioka; D. Timmerman; S. Ichikawa; Y. Fujiwara

10.1063/1.5144159

Physics of Semiconductors

Defect-mediated metastability and carrier lifetimes in polycrystalline (Ag,Cu)(In,Ga)Se₂ absorber materials

Andrew J. Ferguson; Rouin Farshchi; Pran K. Paul; Pat Dippo; Jeff Bailey; Dmitry Poplavskyy; Afrina Khanam; Filip Tuomisto; Aaron R. Arehart; Darius Kuciauskas

10.1063/1.5134502

Physics of Semiconductors

Fingerprinting the vibrational signatures of dopants and defects in a fully random alloy: An ab initio case study of Si, Se, and vacancies in In_0.5Ga_0.5As

Haili Jia; Jingyang Wang; Paulette Clancy

10.1063/1.5144191

EDITORIALS

Defects in Semiconductors

Matthew D. McCluskey; Anderson Janotti

10.1063/5.0012677

Photonics, Plasmonics, Photovoltaics, Lasers, Optical Materials and Phenomena

Extrinsic dopants in quasi-one-dimensional photovoltaic semiconductor Sb₂S₃: A first-principles study

Zenghua Cai; Shiyou Chen

10.1063/1.5140751

Physics of Semiconductors

Double perovskite Ba₂BiTaO₆ as a promising p-type transparent conductive oxide: A first-principles defect study

Yuan Yin; Yelong Wu; Guangde Chen; Wan-Jian Yin

10.1063/1.5140699

Physics of Semiconductors

Origin of high carrier concentration in amorphous wide-bandgap oxides: Role of disorder in defect formation and electron localization in In₂O_3−x

J. E. Medvedeva; I. A. Zhuravlev; C. Burris; D. B. Buchholz; M. Grayson; R. P. H. Chang

10.1063/1.5144219

Physics of Semiconductors

Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates

D. V. Yurasov; A. V. Novikov; N. A. Baidakova; V. Ya. Aleshkin; P. A. Bushuykin; B. A. Andreev; P. A. Yunin; M. N. Drozdov; A. N. Yablonskiy; A. A. Dubinov; Z. F. Krasilnik

10.1063/1.5140072

Physics of Semiconductors

Koopmans’ tuning of HSE hybrid density functional for calculations of defects in semiconductors: A case study of carbon acceptor in GaN

D. O. Demchenko; M. A. Reshchikov

10.1063/1.5140661

Thin Films, Interfaces, and Surfaces

Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P_bC center in various 4H-SiC(0001)/SiO₂ interfaces

T. Umeda; Y. Nakano; E. Higa; T. Okuda; T. Kimoto; T. Hosoi; H. Watanabe; M. Sometani; S. Harada

10.1063/1.5134648

Physics of Materials, Including Electrical, Thermal, Mechanical and Other Properties

Atomic-level calculations and experimental study of dislocations in InSb

Anil Kumar; Bouzid Kedjar; Yanqing Su; Ludovic Thilly; Irene J. Beyerlein

10.1063/1.5139285

Physics of Semiconductors

Effect of design and stress relaxation on structural, electronic, and luminescence properties of metamorphic InAs(Sb)/In(Ga,Al)As/GaAs mid-IR emitters with a superlattice waveguide

M. Yu. Chernov; V. A. Solov’ev; O. S. Komkov; D. D. Firsov; A. D. Andreev; A. A. Sitnikova; S. V. Ivanov

10.1063/1.5144210

Physics of Semiconductors

Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE

Haifa Alghamdi; Vanessa Orsi Gordo; Martin Schmidbauer; Jorlandio F. Felix; Sultan Alhassan; Amra Alhassni; Gabriela Augusta Prando; Horácio Coelho-Júnior; Mustafa Gunes; Helder Vinicius Avanço Galeti; Yara Galvão Gobato; Mohamed Henini

10.1063/1.5140447

Photonics, Plasmonics, Photovoltaics, Lasers, Optical Materials and Phenomena

Room-temperature operation of near-infrared light-emitting diode based on Tm-doped GaN with ultra-stable emission wavelength

S. Ichikawa; N. Yoshioka; J. Tatebayashi; Y. Fujiwara

10.1063/1.5140715

Dielectrics, Ferroelectrics, and Multiferroics

Direct, spatially resolved observation of defect states with electromigration and degradation of single crystal SrTiO₃

Hantian Gao; Sulata Sahu; Clive A. Randall; Leonard J. Brillson

10.1063/1.5130892

Physics of Semiconductors

Optical spectroscopy of muon/hydrogen defects in 6H-SiC

J. S. Lord; K. Yokoyama; P. W. Mengyan; M. R. Goeks; R. L. Lichti; R. C. Vilao; H. V. Alberto

10.1063/1.5140733

Magnetism, Spintronics, and Superconductivity

Valence states and the magnetism of Eu ions in Eu-doped GaN

Takumi Nunokawa; Yasufumi Fujiwara; Yusuke Miyata; Norifumi Fujimura; Takahiro Sakurai; Hitoshi Ohta; Akira Masago; Hikari Shinya; Tetsuya Fukushima; Kazunori Sato; Hiroshi Katayama-Yoshida

10.1063/1.5135743

Physics of Semiconductors

The Cu photoluminescence defect and the early stages of Cu precipitation in Si

T. M. Vincent; S. K. Estreicher; J. Weber; V. Kolkovsky; N. Yarykin

10.1063/1.5140456

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Defects in Semiconductors 2020

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Defects in Semiconductors 2020

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