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Defects in Semiconductors 2020

Defects play key roles in a range of materials. Applications include silicon chips, energy-efficient solar cells, and light-emitting diodes, as well as emerging areas such as quantum computing and 2D materials. Advances in thin-film growth, microscopy, spectroscopy, and theory are leading to an unprecedented glimpse into atomic-level properties of point and line defects. This Collection on Defects in Semiconductors provides a valuable forum where researchers studying the fundamentals of defects in semiconductors can share their most recent and novel findings.

Guest Editors: Matthew D. McCluskey and Anderson Janotti

Photonics, Plasmonics, Photovoltaics, Lasers, Optical Materials and Phenomena

Defect properties of solar cells with layers of GaP based dilute nitrides grown by molecular beam epitaxy

Artem I. Baranov; Alexander S. Gudovskikh; Anton Yu. Egorov; Dmitry A. Kudryashov; Sylvain Le Gall; Jean-Paul Kleider

https://doi.org/10.1063/1.5134681

Physics of Semiconductors

Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon

Kunal Mukherjee; Jennifer Selvidge; Daehwan Jung; Justin Norman; Aidan A. Taylor; Mike Salmon; Alan Y. Liu; John E. Bowers; Robert W. Herrick

https://doi.org/10.1063/1.5143606

Photonics, Plasmonics, Photovoltaics, Lasers, Optical Materials and Phenomena

Enhancement of Er luminescence in microdisk resonators made of Er,O-codoped GaAs

R. Higashi; M. Ogawa; J. Tatebayashi; N. Fujioka; D. Timmerman; S. Ichikawa; Y. Fujiwara

https://doi.org/10.1063/1.5144159

Physics of Semiconductors

Defect-mediated metastability and carrier lifetimes in polycrystalline (Ag,Cu)(In,Ga)Se₂ absorber materials

Andrew J. Ferguson; Rouin Farshchi; Pran K. Paul; Pat Dippo; Jeff Bailey; Dmitry Poplavskyy; Afrina Khanam; Filip Tuomisto; Aaron R. Arehart; Darius Kuciauskas

https://doi.org/10.1063/1.5134502

Physics of Semiconductors

Fingerprinting the vibrational signatures of dopants and defects in a fully random alloy: An ab initio case study of Si, Se, and vacancies in In_0.5Ga_0.5As

Haili Jia; Jingyang Wang; Paulette Clancy

https://doi.org/10.1063/1.5144191

EDITORIALS

Defects in Semiconductors

Matthew D. McCluskey; Anderson Janotti

https://doi.org/10.1063/5.0012677

Photonics, Plasmonics, Photovoltaics, Lasers, Optical Materials and Phenomena

Extrinsic dopants in quasi-one-dimensional photovoltaic semiconductor Sb₂S₃: A first-principles study

Zenghua Cai; Shiyou Chen

https://doi.org/10.1063/1.5140751

Physics of Semiconductors

Double perovskite Ba₂BiTaO₆ as a promising p-type transparent conductive oxide: A first-principles defect study

Yuan Yin; Yelong Wu; Guangde Chen; Wan-Jian Yin

https://doi.org/10.1063/1.5140699

Physics of Semiconductors

Origin of high carrier concentration in amorphous wide-bandgap oxides: Role of disorder in defect formation and electron localization in In₂O_3−x

J. E. Medvedeva; I. A. Zhuravlev; C. Burris; D. B. Buchholz; M. Grayson; R. P. H. Chang

https://doi.org/10.1063/1.5144219

Physics of Semiconductors

Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates

D. V. Yurasov; A. V. Novikov; N. A. Baidakova; V. Ya. Aleshkin; P. A. Bushuykin; B. A. Andreev; P. A. Yunin; M. N. Drozdov; A. N. Yablonskiy; A. A. Dubinov; Z. F. Krasilnik

https://doi.org/10.1063/1.5140072

Physics of Semiconductors

Koopmans’ tuning of HSE hybrid density functional for calculations of defects in semiconductors: A case study of carbon acceptor in GaN

D. O. Demchenko; M. A. Reshchikov

https://doi.org/10.1063/1.5140661

Thin Films, Interfaces, and Surfaces

Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P_bC center in various 4H-SiC(0001)/SiO₂ interfaces

T. Umeda; Y. Nakano; E. Higa; T. Okuda; T. Kimoto; T. Hosoi; H. Watanabe; M. Sometani; S. Harada

https://doi.org/10.1063/1.5134648

Physics of Materials, Including Electrical, Thermal, Mechanical and Other Properties

Atomic-level calculations and experimental study of dislocations in InSb

Anil Kumar; Bouzid Kedjar; Yanqing Su; Ludovic Thilly; Irene J. Beyerlein

https://doi.org/10.1063/1.5139285

Physics of Semiconductors

Effect of design and stress relaxation on structural, electronic, and luminescence properties of metamorphic InAs(Sb)/In(Ga,Al)As/GaAs mid-IR emitters with a superlattice waveguide

M. Yu. Chernov; V. A. Solov’ev; O. S. Komkov; D. D. Firsov; A. D. Andreev; A. A. Sitnikova; S. V. Ivanov

https://doi.org/10.1063/1.5144210

Physics of Semiconductors

Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE

Haifa Alghamdi; Vanessa Orsi Gordo; Martin Schmidbauer; Jorlandio F. Felix; Sultan Alhassan; Amra Alhassni; Gabriela Augusta Prando; Horácio Coelho-Júnior; Mustafa Gunes; Helder Vinicius Avanço Galeti; Yara Galvão Gobato; Mohamed Henini

https://doi.org/10.1063/1.5140447

Photonics, Plasmonics, Photovoltaics, Lasers, Optical Materials and Phenomena

Room-temperature operation of near-infrared light-emitting diode based on Tm-doped GaN with ultra-stable emission wavelength

S. Ichikawa; N. Yoshioka; J. Tatebayashi; Y. Fujiwara

https://doi.org/10.1063/1.5140715

Dielectrics, Ferroelectrics, and Multiferroics

Direct, spatially resolved observation of defect states with electromigration and degradation of single crystal SrTiO₃

Hantian Gao; Sulata Sahu; Clive A. Randall; Leonard J. Brillson

https://doi.org/10.1063/1.5130892

Physics of Semiconductors

Optical spectroscopy of muon/hydrogen defects in 6H-SiC

J. S. Lord; K. Yokoyama; P. W. Mengyan; M. R. Goeks; R. L. Lichti; R. C. Vilao; H. V. Alberto

https://doi.org/10.1063/1.5140733

Physics of Semiconductors

Cathodoluminescence study of electric field induced migration of defects in single crystal m-plane ZnO

Jedsada Manyam; Cuong Ton-That; Matthew R. Phillips

https://doi.org/10.1063/1.5134555

Magnetism, Spintronics, and Superconductivity

Valence states and the magnetism of Eu ions in Eu-doped GaN

Takumi Nunokawa; Yasufumi Fujiwara; Yusuke Miyata; Norifumi Fujimura; Takahiro Sakurai; Hitoshi Ohta; Akira Masago; Hikari Shinya; Tetsuya Fukushima; Kazunori Sato; Hiroshi Katayama-Yoshida

https://doi.org/10.1063/1.5135743

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Defects in Semiconductors 2020

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