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Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_008
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
...Wong, M. H., “High breakdown voltage β-Ga2O3 Schottky diodes,” in Ultrawide Bandgap β-Ga2O3Semiconductor: Theory and Applications, edited by J. S. Speck and E. Farzana (AIP Publishing, Melville, New York, 2023), pp. 8...
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(a) shows the time-resolved current response of multilayers for a <span class="search-highlight">voltage</span> p...
Published: March 2023
FIG. 10.9 (a) shows the time-resolved current response of multilayers for a voltage pulse of 500 ns pulse width. Inset shows the half input pulse profile for the input pulse of 1.8 V amplitude and 500 ns pulse width. (b) Polarization-time curves obtained by integrating the It curve of multilayer samples. (c) Voltage–time and current–time curve for individual BCZT film. (d) Polarization-time curve for individual BCZT film. More about this image found in (a) shows the time-resolved current response of multilayers for a voltage p...
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(a) Current–<span class="search-highlight">voltage</span> characteristics of the Pr-doped ZnO bicrystal with a [0...
Published: March 2023
FIG. 5.8 (a) Current–voltage characteristics of the Pr-doped ZnO bicrystal with a [0001] Σ7 GB and (b) ADF-STEM image of the GB. (c) Stable atomic arrangement and (d) defect formation energy of the GB obtained from first-principles calculation ( Sato et al., 2006 ). More about this image found in (a) Current–voltage characteristics of the Pr-doped ZnO bicrystal with a [0...
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Circuit symbols for MOS transistor (a) p-channel MOS (PMOS); <em>V<sub></sub></em>...
Published: March 2023
FIG. 4.2 Circuit symbols for MOS transistor (a) p-channel MOS (PMOS); Vgs is the gate-to-source voltage; (b) n-channel MOS (PMOS); (c) CMOS inverted circuit symbol; VDD is the DC voltage applied to the drain terminal. Vin and Vout, respectively, are the input and output voltages, respectively, and d, g, and s denote the drain, gate, and source terminals, respectively. More about this image found in Circuit symbols for MOS transistor (a) p-channel MOS (PMOS); V...
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(a) IoT-based remote monitoring system, (b) posted data on the Blynk platfo...
Published: March 2023
FIG. 6.7 (a) IoT-based remote monitoring system, (b) posted data on the Blynk platform (voltage, current, power, air temperature, solar irradiance, and cell temperature), and (c) the monitored PV array installed at the rooftop of the University of Jijel (Algeria). More about this image found in (a) IoT-based remote monitoring system, (b) posted data on the Blynk platfo...
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Schematic of (a) basic parallel plate electrostatic actuator ( Errando-Herr...
Published: March 2023
FIG. 7.7 Schematic of (a) basic parallel plate electrostatic actuator ( Errando-Herranz et al., 2020 ) and (b) a comb drive for linear motion. Schematic of (c) a basic scratch drive actuator (SDA) ( Akiyama and Fujita, 1995 ). Step by step crawling motion of the actuator under pulse voltage input. (d) Pressing down of plate with rising voltage pushing the bushing forward. (e) Releasing of the SDA by falling voltage resulting in pulling the plate to right while pinning down the bush due to its shape. (f) Negative rise of voltage resulting in another pressing down of the beam resulting in the bushing moving to the left resulting in net rightward motion of the plate from the starting point. This process repeats for each half cycle. More about this image found in Schematic of (a) basic parallel plate electrostatic actuator ( Errando-Herr...
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Application space of Si and other WBG semiconductors based on (a) <span class="search-highlight">voltage</span> a...
Published: February 2023
FIG. 1.2 Application space of Si and other WBG semiconductors based on (a) voltage and current ratings ( Pearton et al., 2018 ) and (b) power-frequency diagram ( Mastro et al., 2017 ). More about this image found in Application space of Si and other WBG semiconductors based on (a) voltage a...
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(a) Cox<sup>2</sup>/C<sup>2</sup> − 1 vs gate <span class="search-highlight">voltage</span> plot and (b) extracte...
Published: February 2023
FIG. 9.10 (a) Cox2/C2 − 1 vs gate voltage plot and (b) extracted interface trap density of Au/Ti/Al2O3/β-Ga2O3 MOSCAPs with planar, pyramid, trapezoid-like, and blade structures formed by MacEtch. Reprinted with permission from Huang et al., ACS Nano 13 (8), 8784–8792 (2019a). Copyright 2019 American Chemical Society. More about this image found in (a) Cox2/C2 − 1 vs gate voltage plot and (b) extracte...
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Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425613_005
EISBN: 978-0-7354-2561-3
ISBN: 978-0-7354-2560-6
... network as an apparent reverse power flow can increase the voltage in the distribution feeders, triggering the protection mechanisms installed on solar inverters and leading to the shutdown of PV power generation. This can cause sudden changes in network power flow and voltage. Thus, reverse power flow...